MICROWAVE CORPORATION HMC473MS8 v00.1103 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz ATTENUATORS - SMT 9 Typical Applications Features The HMC473MS8 is ideal for: Single Positive Voltage Control: 0 to +3V • Cellular, UMTS/3G Infrastructure High Attenuation Range: 48 dB @ 0.9 GHz • Portable Wireless High P1dB Compression Point: +15 dBm • GPS Ultra Small Package: MSOP8 Replaces HMC173MS8 General Description Functional Diagram The HMC473MS8 is an absorptive voltage variable attenuator in an 8-lead MSOP package. The device operates with a +3.3V supply voltage and a 0 to +3V control voltage. Unique features include a high dynamic attenuation range of up to 48 dB and excellent power handling performance through all attenuation states. The HMC473MS8 is ideal for operation in wireless applications from 0.45 to 1.6 GHz. Operation from 1.7 to 2.2 GHz is possible with a reduced maximum attenuation of 29 to 32 dB. The HMC473MS8 can be used with an external driver circuit for improved control voltage linearity vs. attenuation. Electrical Specifications, TA = +25° C, Vdd = +3.3 Vdc, 50 Ohm System Parameter Insertion Loss (Min. Atten.) (Vctl = 0.0 Vdc) 0.45 - 0.8 GHz 0.8 - 1.0 GHz 1.0 - 1.6 GHz 1.6 - 2.0 GHz 2.0 - 2.2 GHz Attenuation Range (Vctl = 0 to +3 V) 0.45 - 0.8 GHz 0.8 - 1.0 GHz 1.0 - 1.6 GHz 1.6 - 2.0 GHz 2.0 - 2.2 GHz Return Loss (Vctl = 0 to +3 V) Typ. Max. Units 1.8 1.9 2.4 2.8 3.0 2.2 2.3 2.9 3.3 3.5 dB dB dB dB dB 39 48 37 32 29 dB dB dB dB dB 0.45 - 0.8 GHz 0.8 - 1.0 GHz 1.0 - 1.6 GHz 1.6 - 2.0 GHz 2.0 - 2.2 GHz 15 14 11 10 9 dB dB dB Input Power for 0.1 dB Compression (0.9 GHz) Min Atten. Atten. >2.0 20 5.5 dBm dBm Input Power for 1.0 dB Compression (0.9 GHz) Min Atten. Atten. >2.0 28 15 dBm dBm Input Third Order Intercept (0.9 GHz, Two-tone Input Power = +5.0 dBm Each Tone) Min Atten. Atten. >2.0 47 20 dBm dBm 0.45 - 2.2 GHz 1.3 1.5 µS µS Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 9 - 110 Min. 34 43 32 27 24 24 11 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC473MS8 v00.1103 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Insertion Loss vs. Temperature Return Loss vs. Control Voltage 0 -2 -3 -4 -15 -25 0.4 0.6 0.8 1 1.2 1.4 1.6 FREQUENCY (GHz) 1.8 2 2.2 Input IP3 vs. Control Voltage @ 0.45 GHz 0.4 50 50 45 45 INPUT IP3 (dBm) 55 40 35 30 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 1.8 2 Input IP3 vs. Control Voltage @ 0.9 GHz 55 25 40 35 30 25 +25 C +85 C -40 C 20 +25 C +85 C -40 C 20 15 15 0 0.5 1 1.5 2 2.5 3 0 0.5 CONTROL VOLTAGE (V) 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) Input IP3 vs. Control Voltage @ 1.9 GHz Input IP3 vs. Control Voltage @ 2.1 GHz 55 55 50 50 45 45 INPUT IP3 (dBm) INPUT IP3 (dBm) 9 -10 -20 -5 INPUT IP3 (dBm) 0V 1.0 V 1.8 V 2.0 V 3.0 V -5 ATTENUATORS - SMT +25 C +85 C -40 C -1 RETURN LOSS (dB) INSERTION LOSS (dB) 0 40 35 30 25 40 35 30 25 +25 C +85 C -40 C 20 +25 C +85 C -40 C 20 15 15 0 0.5 1 1.5 2 CONTROL VOLTAGE (V) 2.5 3 0 0.5 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 9 - 111 HMC473MS8 v00.1103 MICROWAVE CORPORATION GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Relative Attenuation vs. Control Voltage @ 0.45 GHz Return Loss vs. Control Voltage @ 0.45 GHz 0 0 -5 RETURN LOSS (dB) ATTENUATION (dB) -15 +25 C +85 C -40 C -5 +25 C +85 C -40 C -20 -25 -30 -35 -10 -15 -20 -40 -45 -25 0 0.5 1 1.5 2 2.5 0 3 0.5 CONTROL VOLTAGE (V) 1 1.5 2 2.5 3 CONTROL VOLTAGE (V) Return Loss vs. Control Voltage @ 0.9 GHz Relative Attenuation vs. Control Voltage @ 0.9 GHz 0 0 -5 -10 +25 C +85 C -40 C -15 +25 C +85C -40 C -5 RETURN LOSS (dB) ATTENUATION (dB) ATTENUATORS - SMT 9 -10 -20 -25 -30 -35 -40 -45 -10 -15 -20 -50 -55 -60 -25 0 0.5 1 1.5 2 2.5 3 0 0.5 CONTROL VOLTAGE (V) 1.5 2 2.5 3 Return Loss vs. Control Voltage @ 1.9 GHz Relative Attenuation vs. Control Voltage @ 1.9 GHz 0 0 -5 +25 C +85 C - 40 C -10 +25 C +85 C -40 C -5 RETURN LOSS (dB) ATTENUATION (dB) 1 CONTROL VOLTAGE (V) -15 -20 -25 -10 -15 -20 -30 -35 -25 0 0.5 1 1.5 2 CONTROL VOLTAGE (V) 9 - 112 2.5 3 0 0.5 1 1.5 2 CONTROL VOLTAGE (V) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 2.5 3 HMC473MS8 v00.1103 MICROWAVE CORPORATION GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Relative Attenuation vs. Control Voltage @ 2.1 GHz Return Loss vs. Control Voltage @ 2.1 GHz 0 0 -10 -15 -20 -25 9 +25 C +85 C -40 C -5 -10 -15 -20 -30 -35 -25 0 0.5 1 1.5 2 2.5 3 0 0.5 CONTROL VOLTAGE (V) 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 1.5 2 2.5 3 Worse Case Input P1dB vs. Temperature 25 INPUT P1dB (dBm) ATTENUATION (dB) Relative Attenuation vs. Control Voltage 0.4 1 CONTROL VOLTAGE (V) 1.0 V 1.5 V 1.6V 1.7 V 1.8 V 2.0 V 3.0 V 0.6 0.8 1 1.2 1.4 1.6 FREQUENCY (GHz) 1.8 2 2.2 20 15 10 5 0.4 ATTENUATORS - SMT +25 C +85 C -40 C RETURN LOSS (dB) ATTENUATION (dB) -5 +25 C +85 C -40 C 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 FREQUENCY (GHz) Absolute Maximum Ratings Control and Bias Voltage VCTL -0.2 Vdc to Vdd VCTL 0 to +3 Vdc @ 1 µA Vdd +8 Vdc Vdd +3.3 Vdc +/- 0.1 Vdc @ 10 µA Maximum Input Power Vdd = +3.3 Vdc +29 dBm +21 dBm Channel Temperature (Tc) 150 °C Thermal Resistance (RTH) (junction to lead) 92 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Min. Atten. Attenuation >2 dB For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 9 - 113 MICROWAVE CORPORATION HMC473MS8 v00.1103 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Outline Drawing ATTENUATORS - SMT 9 NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Pin Descriptions 9 - 114 Pin Number Function Description 1, 8 RF1, RF2 These pins are DC coupled and matched to 50 Ohms. DC blocking capacitors are required. 330pF capacitors are supplied on evaluation board. 2, 7 GND Pins must connect to RF ground. 3 Vctl Control voltage 4, 5 N/C No Connection. These pins may be connected to RF ground. Performance will not be affected. 6 Vdd Supply Voltage. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC473MS8 v00.1103 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Attenuation Linearizing Control Circuit For The HMC473MS8 Voltage Variable Attenuator Diode and resistor values which define the op-amp gain, and breakpoint were selected to optimize a measured production lot of attenuators at 0.9 GHz. R7 may be varied to optimize the performance of any given attenuator. If the input voltage to the linearizing circuit will not drop below 1.0V, the R9 and D2 may be omitted, and this will greatly reduce the overall power consumption of the driver circuit. The linearizing circuit has been optimized for 0.9 GHz attenuation applications. A similar approach may be used at other frequencies by adjusting R1 - R9 resistor values. Required Parts List Part Description Manufacturer AD822 Op-Amp Analog Devices R1 10K ohms Panasonic R2 200K ohms Panasonic R3 7.5K ohms Panasonic R4 39K ohms Panasonic R5 220K ohms Panasonic R6 91K ohms Panasonic R7 910 ohms Panasonic R8 51 ohms Panasonic R9 100 ohms Panasonic D1, D2 LL4148 D-35 Digi-Key Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 9 ATTENUATORS - SMT A driver circuit to improve the attenuation linearity of the HMC473MS8 can be implemented with a simple op-amp configuration. A breakpoint linearization circuit will scale the voltage supplied to the control line of the HMC473MS8, so that a more linear attenuation vs. control voltage slope can be achieved. A -3.3V and +3.3V supply is required. 9 - 115 MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Evaluation PCB ATTENUATORS - SMT 9 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF ports should be 50 ohm impedance and the package ground leads should be connected directly to the PCB RF ground plane, similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. List of Material Item Description J1 - J2 PC Mount SMA RF Connector J3 - J5 DC PIN C1, C2 330pF capacitor, 0402 package C3, C4 10KpF capacitor, 0603 package U1 HMC473MS8 PCB* 101825 Eval Board *Circuit Board Material: Rogers 4350 9 - 116 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.1103 HMC473MS8 GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.45 - 2.2 GHz Notes: ATTENUATORS - SMT 9 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 9 - 117