Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 Typical Applications Features The HMC740ST89E is ideal for: P1dB Output Power: +18 dBm • Cellular/3G & WiMAX/4G Gain: 15 dB • Fixed Wireless & WLAN Output IP3: +40 dBm • CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os • Microwave Radio & Test Equipment Single Supply: +5V • IF & RF Applications Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network Functional Diagram The HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18 dBm output power. The HMC740ST89E offers 15 dB of gain with a +40 dBm output IP3 at 100 MHz, and can operate directly from a +5V supply. The HMC740ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. Electrical Specifications, Vcc = 5V, TA = +25° C Parameter Min. Frequency Range Gain Typ. Max. Min. 0.05 - 1 12 15 Gain Flatness ±0.1 Gain Variation over Temperature 0.003 11 Typ. Max. 0.05 - 3 GHz 15 dB ±0.7 0.006 Units 0.003 dB 0.006 dB/ °C Input Return Loss 18 15 dB Output Return Loss 18 18 dB Reverse Isolation 20 21 dB 17 dBm Output Power for 1 dB Compression (P1dB) 8-1 General Description 15.5 18 14.5 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 38 32 dBm Noise Figure 3.5 3.5 dB Supply Current (Icq) 88 88 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz IF Band Performance Gain & Return Loss Gain vs. Temperature 8 20 20 15 S21 S11 S22 0 -5 -10 -15 +25C +85C -40C 10 5 -20 -25 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 0 1 Noise Figure vs. Temperature 0 0.4 0.6 FREQUENCY (GHz) 0.8 1 0.8 1 Output IP3 vs. Temperature 45 8 7 +25C +85C -40C 6 40 5 IP3 (dBm) NOISE FIGURE (dB) 0.2 4 3 2 35 +25C +85C -40C 30 25 1 0 20 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Vcc Output IP3 vs. Output Power 45 50 45 40 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 15 5 GAIN (dB) RESPONSE (dB) 10 40 IP3 (dBm) IP3 (dBm) 35 35 30 30 25 100MHz 400MHz 1GHz 20 15 4.5V 5.0V 5.5V 25 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 10 5 0.8 1 0 -5 0 5 Pout (dBm) 10 15 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-2 HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Broadband Performance 8 Gain & Return Loss Gain vs. Temperature 20 20 15 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 15 5 -5 -10 -15 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 0 3 Gain vs. Vcc 0 0.5 1 2.5 3 0 +25C +85C -40C -5 RETURN LOSS (dB) 15 GAIN (dB) 1.5 2 FREQUENCY (GHz) Input Return Loss vs. Temperature 20 4.5V 5.0V 5.5V 10 5 -10 -15 -20 -25 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 -30 3 Output Return Loss vs. Temperature 0 -5 -5 RETURN LOSS (dB) 0 +25C +85C -40C -10 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Input Return Loss vs. Vcc -15 -20 -25 4.5V 5.0V 5.5V -10 -15 -20 -25 -30 -30 0 8-3 +25C +85C -40C 10 5 -20 RETURN LOSS (dB) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 10 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Noise Figure vs. Temperature 0 7 NOISE FIGURE (dB) RETURN LOSS (dB) -5 4.5V 5.0V 5.5V -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 6 5 4 3 2 0 3 0 0.5 1 2 2.5 3 Reverse Isolation vs. Temperature 0 6 REVERSE ISOLATION (dB) 7 4.5V 5.0V 5.5V 5 4 3 2 1 0 -5 +25C +85C -40C -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 0 3 0.5 1 FREQUENCY (GHz) Reverse Isolation vs. Vcc 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Output IP3 vs. Temperature 50 0 -5 40 4.5V 5.0V 5.5V -10 IP3 (dBm) REVERSE ISOLATION (dB) 1.5 FREQUENCY (GHz) 8 NOISE FIGURE (dB) +25C +85C -40C 1 Noise Figure vs. Vcc -15 30 +25C +85C -40C 20 -20 10 -25 -30 8 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Output Return Loss vs. Vcc 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-4 HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz 140 40 120 CURRENT (mA) IP3 (dBm) 50 30 4.5V 5.0V 5.5V 20 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 80 20 15 15 +25C +85C -40C 10 4.75 5 VOLTAGE (V) 5.25 5.5 Psat vs. Temperature 20 Psat (dBm) P1dB (dBm) 100 40 4.5 3 P1dB vs. Temperature 5 0 +25C +85C -40C 60 +25C +85C -40C 10 5 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 0 3 Power Compression @ 500 MHz 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4 8 Power Compression @ 2 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 Pout Gain PAE -5 -10 -20 8-5 Current vs. Temperature 10 Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 Output IP3 vs. Vcc -17 -14 -11 -8 -5 -2 INPUT POWER (dBm) 1 4 7 15 10 5 0 Pout Gain PAE -5 -10 -20 -16 -12 -8 -4 0 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Collector Bias Voltage (Vcc) +5.5 Vdc RF Input Power (RFIN) +15 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 10.23 mW/°C above 85 °C) 0.66 W Thermal Resistance (junction to lead) 97.78 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HMB) Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 8 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Absolute Maximum Ratings 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC740ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H740 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-6 HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 8-7 Pin Descriptions Pin Number Function Description 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC740ST89E v02.0813 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Evaluation PCB Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pin C1, C2 470 pF Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 µF Capacitor Tantalum L1 820 nH Inductor, 0603 Pkg. U1 HMC740ST89E PCB [2] 119392 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. AMPLIFIERS - DRIVER & GAIN BLOCK - SMT List of Materials for Evaluation PCB 124390 8 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-8