HMC741ST89E v02.0710 Amplifiers - Driver & Gain Block - SMT 8 Typical Applications Features The HMC741ST89E is ideal for: P1dB Output Power: +18.5 dBm • Cellular/3G & WiMAX/4G Gain: 20 dB • Fixed Wireless & WLAN Output IP3: +42 dBm • CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os • Microwave Radio & Test Equipment Single Supply: +5V • IF & RF Applications Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network Functional Diagram General Description The HMC741ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18.5 dBm output power. The HMC741ST89E offers 20 dB of gain with a +42 dBm output IP3 at 200 MHz, and can operate directly from a +5V supply. The HMC741ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. Electrical Specifications, Vcc = 5V, TA = +25° C Parameter Min. Frequency Range Gain Typ. Max. Min. 150 19 20 Typ. Max. Min. 240 19 21 Typ. Max. Min. 50 - 1000 16 ±0.3 ±0.3 ±0.3 Gain Variation over Temperature 0.004 0.004 0.004 Typ. Max. 50 - 3000 20 Gain Flatness 12 0.01 Units MHz 19 dB ±2.6 dB 0.004 0.01 dB/ °C Input Return Loss 16 16 16 12 dB Output Return Loss 17 17 17 12 dB Reverse Isolation 25 25 25 26 dB 16 dBm dBm Output Power for 1 dB Compression (P1dB) 8-1 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz 16 18.8 16 18.8 16 18.8 14 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 40.5 40.5 40.5 30 Noise Figure 2.5 2.5 2.5 2.5 dB Supply Current (Icq) 96 96 96 96 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz IF Band Performance Gain & Return Loss Gain vs. Temperature 8 30 25 20 S21 S11 S22 5 20 GAIN (dB) RESPONSE (dB) 10 0 -5 -10 15 +25C +85C -40C 10 -15 -20 5 -25 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 0 1 Noise Figure vs. Temperature 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0.8 1 Output IP3 vs. Temperature 50 8 7 45 6 +25C +85C -40C 5 40 IP3 (dBm) NOISE FIGURE (dB) 0 4 3 35 +25C +85C -40C 30 2 25 1 0 20 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Vcc Output IP3 vs. Output Power 50 50 45 45 40 35 IP3 (dBm) 40 IP3 (dBm) Amplifiers - Driver & Gain Block - SMT 25 15 35 30 25 20 15 4.5V 5.0V 5.5V 25 30 100MHz 400MHz 1GHz 10 5 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 -5 0 5 Pout (dBm) 10 15 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-2 HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Broadband Performance 8 Gain & Return Loss Gain vs. Temperature 30 25 20 25 20 S21 S11 S22 5 0 GAIN (dB) RESPONSE (dB) 10 -5 -10 +25C +85C -40C 5 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 0 3 Gain vs. Vcc RETURN LOSS (dB) 4.5V 5.0V 5.5V 10 5 1.5 2 FREQUENCY (GHz) 2.5 3 -10 -15 +25C +85C -40C -20 -25 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 -30 3 Output Return Loss vs. Temperature 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Input Return Loss vs. Vcc 0 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 1 -5 15 -10 -15 -20 -25 -30 0.5 0 20 0 0 Input Return Loss vs. Temperature 25 -5 8-3 15 10 -15 -20 GAIN (dB) Amplifiers - Driver & Gain Block - SMT 15 -10 -15 4.5V 5.0V 5.5V -20 -25 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Noise Figure vs. Temperature 0 NOISE FIGURE (dB) RETURN LOSS (dB) 7 4.5V 5.0V 5.5V -5 -10 -15 -20 -25 -30 6 +25C +85C -40C 5 4 3 2 1 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 0 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Vcc 0 8 6 REVERSE ISOLATION (dB) 7 NOISE FIGURE (dB) 8 8 4.5V 5.0V 5.5V 5 4 3 2 1 0 -5 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 +25C +85C -40C -10 3 0 0.5 1 FREQUENCY (GHz) Reverse Isolation vs. Vcc 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Output IP3 vs. Temperature 0 50 40 35 4.5V 5.0V 5.5V -10 IP3 (dBm) REVERSE ISOLATION (dB) 45 -5 Amplifiers - Driver & Gain Block - SMT Output Return Loss vs. Vcc -15 -20 30 25 20 +25C +85C -40C 15 10 -25 5 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-4 HMC741ST89E v02.0710 8 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Current vs. Temperature Output IP3 vs. Vcc 140 50 45 CURRENT (mA) IP3 (dBm) 30 25 20 4.5V 5.0V 5.5V 15 100 80 60 10 5 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 20 15 15 +25C +85C -40C 10 5 0 4.75 5 VOLTAGE (V) 5.25 5.5 Psat vs. Temperature 20 Psat (dBm) P1dB (dBm) 40 4.5 3 P1dB vs. Temperature +25C +85C -40C 10 5 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 0 3 Power Compression @ 500 MHz 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Power Compression @ 2 GHz 25 Pout (dBm), GAIN (dB), PAE (%) 25 Pout (dBm), GAIN (dB), PAE (%) Amplifiers - Driver & Gain Block - SMT 35 20 Pout Gain PAE 15 10 5 0 -5 -20 8-5 +25C +85C -40C 120 40 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 20 15 Pout Gain PAE 10 5 0 -5 -20 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Collector Bias Voltage (Vcc) +5.5 Vdc RF Input Power (RFIN) +15 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 10.22 mW/°C above 85 °C) 0.66 W Thermal Resistance (junction to lead) 97.83 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HMB) Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8 Amplifiers - Driver & Gain Block - SMT Absolute Maximum Ratings Package Information Part Number Package Body Material Lead Finish HMC741ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H741 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-6 HMC741ST89E v02.0710 Amplifiers - Driver & Gain Block - SMT 8 8-7 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Pin Descriptions Pin Number Function Description 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC741ST89E v02.0710 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Evaluation PCB Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pin C1, C2 470 pF Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 µF Capacitor Tantalum L1 820 nH Inductor, 0603 Pkg. U1 HMC741ST89E PCB [2] 119392 Evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. Amplifiers - Driver & Gain Block - SMT List of Materials for Evaluation PCB 124390 8 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8-8