Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC772LC4 v02.0514 AMPLIFIERS - LOW NOISE - SMT GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Typical Applications Features This HMC772LC4 is ideal for: Noise Figure: 1.8 dB • Wideband Communication Systems Gain: 15 dB • Surveillance Systems Output IP3: +25 dBm • Point-to-Point Radios P1dB Output Power: +13 dBm • Point-to-Multi-Point Radios 50 Ohm Matched Input/Output • Military & Space Supply Voltage: +4V @ 45 mA • Test Instrumentation 24 Lead Ceramic 4x4mm SMT Package: 16mm² Functional Diagram General Description The HMC772LC4 is a GaAs MMIC HEMT Low Noise Wideband Amplifier which operates between 2 and 12 GHz. The amplifier provides 15 dB of gain, 1.8 dB noise figure up to 12 GHz and output IP3 of +25 dBm, while requiring only 45 mA from a +4V supply voltage. The Psat output power of up to +15 dBm enables the LNA to function as a LO driver for many of HIttite’s balanced, I/Q or image reject mixers. The HMC772LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for SMT based high capacity microwave radio applications. The HMC772LC4 is housed in a RoHS compliant 4x4 mm QFN leadless ceramic package. Electrical Specifications, TA = +25° C, Vdd= +4V, Idd = 45 mA* Parameter Min. Frequency Range Gain Typ. Max. 2 - 12 14 Units GHz 15 dB Gain Variation over Temperature 0.01 dB / °C Noise Figure 1.8 Input Return Loss 15 Output Return Loss 15 dB Output Power for 1 dB Compression 13 dBm Output Third Order Intercept (IP3) 25 dBm Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)* 45 mA 2.5 dB dB * Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC772LC4 v02.0514 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Gain vs. Temperature Noise Figure vs. Temperature 20 NOISE FIGURE (dB) GAIN (dB) 5 +25 C +85 C - 40 C 18 16 14 12 +25 C +85 C -40 C 4 3 2 1 10 0 1 3 5 7 9 11 13 15 1 3 5 FREQUENCY (GHz) 0 11 13 15 0 +25 C +85 C - 40 C +25 C +85 C - 40 C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 9 Input Return Loss vs. Temperature Output Return Loss vs. Temperature -10 -15 -20 -25 -10 -15 -20 -25 -30 -30 1 3 5 7 9 11 13 15 1 3 5 FREQUENCY (GHz) 16 16 14 14 Psat (dBm) 18 12 11 13 15 13 15 12 +25 C +85 C - 40 C 10 +25 C +85 C - 40 C 8 9 Output Psat vs. Temperature 18 10 7 FREQUENCY (GHz) Output P1dB vs. Temperature P1dB (dBm) 7 FREQUENCY (GHz) AMPLIFIERS - LOW NOISE - SMT 6 8 6 6 1 3 5 7 9 FREQUENCY (GHz) 11 13 15 1 3 5 7 9 11 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC772LC4 v02.0514 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Power Compression @ 12 GHz Output IP3 vs. Temperature 20 Pout (dBm), GAIN (dB), PAE (%) 28 IP3 (dBm) 26 24 +25 C +85 C - 40 C 22 20 3 5 7 9 11 13 15 0 24 -5 21 GAIN (dB), P1dB (dBm) ISOLATION (dB) 0 +25 C +85 C - 40 C -15 -20 -30 5 7 9 FREQUENCY (GHz) -5 0 5 11 13 15 8 7 Gain P1dB 18 6 15 5 12 4 9 3 6 2 3 3 -10 Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz Reverse Isolation vs. Temperature 1 -15 INPUT POWER (dBm) -25 3 5 FREQUENCY (GHz) -10 Pout Gain PAE 10 -5 -20 18 1 15 Noise Figure 1 0 0 3.5 NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - SMT 30 4 4.5 Vdd (V) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC772LC4 v02.0514 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Drain Bias Voltage +5V Drain Bias Current 60 mA RF Input Power 5 dBm Gate Bias Voltage -1 to 0.3 V Continuous Pdiss (T = 85 °C) (derate 5.8 mW/°C above 85 °C) 0.55 W Thermal Resistance (Channel to ground paddle) 172 °C/W Channel Temperature 180 °C Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LOW NOISE - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC772LC4 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H772 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC772LC4 v02.0514 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz AMPLIFIERS - LOW NOISE - SMT Pin Descriptions 5 Pin Number Function Description 1, 2, 4 - 7, 12 - 15, 17 - 19, 24 GND These pins and ground paddle must be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 8 Vgg Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See application circuit for required external components. 9 Vdd Power Supply Voltage for the amplifier. See application circuit for required external components. 10, 11, 20 - 23 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC772LC4 v02.0514 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 126359 Item Description J1, J2 PCB Mount 2.92mm K-Connector J3 - J5 DC Pin C1, C4 100 pF Capacitor, 0402 Pkg. C2, C5 1000 pF Capacitor, 0603 Pkg. C3, C6 4.7 µF Capacitor, Tantalum U1 HMC772LC4 Amplifier PCB [2] 126357 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6