Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC519LC4 v03.0514 LOW NOISE AMPLIFIERS - SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz Typical Applications Features The HMC519LC4 is ideal for: Noise Figure: 3.5 dB • Point-to-Point Radios Gain: 14 dB • Point-to-Multi-Point Radios & VSAT Output IP3: +23 dBm • Test Equipment & Sensors Single Supply: +3V @ 75 mA • Military & Space 50 Ohm Matched Input/Output 24 Lead Ceramic 4x4mm SMT Package: 16mm2 Functional Diagram General Description The HMC519LC4 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless 4 x 4 mm ceramic surface mount package. The amplifier operates between 18 and 31 GHz, providing 14 dB of small signal gain, 3.5 dB noise figure and output IP3 of +23 dBm, while requiring only 75 mA from a +3V single supply. The P1dB output power of +11 dBm, enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC519LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for microwave radio and VSAT applications. Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Min. Frequency Range Gain 11.4 Gain Variation Over Temperature Max. 14.4 10.2 0.026 Noise Figure 3.5 5.5 Input Return Loss 15 Output Power for 1 dB Compression (P1dB) Min. 11 Saturated Output Power (Psat) 14 Output Third Order Intercept (IP3) 23 Supply Current (Idd) 75 Max. 9.2 13.2 dB 0.016 0.026 dB/ °C 3 5 dB dB 22 dB 12.2 dBm 15.4 dBm 24 95 Units GHz 17 20 8 Typ. 28 - 31 0.016 Output Return Loss 1 Typ. 18 - 28 75 dBm 95 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC519LC4 v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz 20 15 16 S21 S11 S22 5 -5 -15 -25 12 12 +25C - 40C +85C 8 4 0 16 20 24 28 32 16 36 19 22 FREQUENCY (GHz) Input Return Loss vs. Temperature 28 31 34 Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) +25C - 40C +85C -5 RETURN LOSS (dB) 25 FREQUENCY (GHz) -10 -15 -20 +25C - 40C +85C -10 -20 LOW NOISE AMPLIFIERS - SMT Gain vs. Temperature 25 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss -30 -25 -30 -40 16 19 22 25 28 31 34 16 19 22 FREQUENCY (GHz) Noise Figure vs. Temperature 28 31 34 Output IP3 vs. Temperature 10 35 30 +25C - 40C +85C 8 25 6 IP3 (dBm) RESPONSE (dB) 25 FREQUENCY (GHz) 4 20 15 +25C - 40C +85C 10 2 5 0 0 16 19 22 25 28 FREQUENCY (GHz) 31 34 16 18 20 22 24 26 28 30 32 34 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC519LC4 v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz 20 16 16 Psat (dBm) P1dB (dBm) Psat vs. Temperature 20 12 8 +25C - 40C +85C 4 12 +25C - 40C +85C 8 4 0 0 16 19 22 25 28 31 34 16 19 22 FREQUENCY (GHz) 25 28 31 34 0 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Compression @ 24 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 0 +25C - 40C +85C -20 ISOLATION (dB) LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature -40 -60 19 22 25 28 31 12 34 Pout Gain PAE 8 4 0 -20 -80 16 16 -16 -12 -8 -4 INPUT POWER (dBm) FREQUENCY (GHz) Gain, Noise Figure & Power vs. Supply Voltage @ 24 GHz Gain (dB), P1dB (dBm), NF (dB) 24 Gain P1dB NF 20 16 12 8 4 0 2.5 3 3.5 Vdd (V) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC519LC4 v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz Typical Supply Current vs. Vdd +3.5 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +8 dBm 2.5 72 Channel Temperature 175 °C Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Continuous Pdiss (T= 85 °C) (derate 12 mW/°C above 85 °C) 1.08 W Thermal Resistance (channel to package bottom) 83 °C/W Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C ESD Sensitivity (HBM) Class 1B 3.0 75 3.5 78 Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing LOW NOISE AMPLIFIERS - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC519LC4 Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H519 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC519LC4 v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz LOW NOISE AMPLIFIERS - SMT Pad Descriptions 5 Pad Number Function Description 1, 5 - 14, 18, 20, 22, 24 N/C Not Connected 2, 4, 15, 17 GND Package bottom has exposed metal paddle that must be connected to RF/DC ground. 3 RFIN This pad is AC coupled and matched to 50 Ohms 16 RFOUT This pad is AC coupled and matched to 50 Ohms 19, 21, 23 Vdd3, Vdd2, Vdd1 Power Supply Voltage for the amplifier. See application circuit for required external components. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC519LC4 v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 31 GHz LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Material for Evaluation PCB 119667 Item Description J1, J2 2.92mm PCB mount K-Connector J3 - J6 DC Pin C1, C2, C3 100pF Capacitor, 0402 Pkg. C4, C5, C6 1000pF Capacitor, 0603 Pkg. C7, C8, C9 4.7 µF Capacitor, Tantalum U1 HMC519LC4 Amplifier PCB [2] 11995 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6