Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC341LC3B v03.0514 LOW NOISE AMPLIFIERS - SMT SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz Typical Applications Features The HMC341LC3B is ideal for: 2.5 dB Noise Figure • Point-to-Point Radios 13 dB Gain • Point-to-Multi-Point Radios & VSAT +3V @ 35 mA Supply • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use RoHS Compliant 3x3 mm SMT Package Functional Diagram General Description The HMC341LC3B is a GaAs pHEMT MMIC Low Noise Amplifier housed in a leadless RoHS compliant SMT package. Operating from 21 to 29 GHz, the amplifier provides 13 dB of gain and a noise figure of 2.5 dB from a single +3V supply. The RF I/Os are DC blocked and matched to 50 Ohms requiring no external components. The HMC341LC3B eliminates the need for wire bonding, allowing the use of surface mount manufacturing techniques. Electrical Specifications, TA = +25° C, Vdd = +3V, Idd = 35 mA Parameter Min. Frequency Range Gain 1 Typ. Max. Min. 21 - 24 10.5 Typ. Max. Min. 24 - 26 13.5 10 Typ. Max. 26 - 29 13 9 Units GHz 12 dB Gain Variation Over Temperature 0.016 0.025 0.016 0.025 0.016 0.025 dB/ °C Noise Figure 3.25 5 3 3.5 2.5 3 dB Input Return Loss 10 11 9 Output Return Loss 14 10 9 dB dB Output Power for 1 dB Compression (P1dB) 8 8.5 8.5 dBm Saturated Output Power (Psat) 11 11.5 11.5 dBm Output Third Order Intercept (IP3) 19 19 19 dBm Supply Current (Idd) (Vdd = +3V) 35 35 35 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC341LC3B v03.0514 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz Broadband Gain & Return Loss Gain vs. Temperature GAIN (dB) RESPONSE (dB) 14 S21 S11 S22 5 -5 -15 12 10 +25C +85C -40C 8 6 -25 20 22 24 26 28 30 20 32 22 24 Input Return Loss vs. Temperature 30 0 +25C +85C -40C -5 RETURN LOSS (dB) RETURN LOSS (dB) 28 Output Return Loss vs. Temperature 0 -10 -15 -20 +25C +85C -40C -5 -10 -15 -20 20 22 24 26 28 30 20 22 24 FREQUENCY (GHz) 26 28 30 FREQUENCY (GHz) Noise Figure vs. Temperature Output IP3 vs. Temperature 10 22 20 +25C +85C -40C 8 18 6 IP3 (dBm) NOISE FIGURE (dB) 26 FREQUENCY (GHz) FREQUENCY (GHz) LOW NOISE AMPLIFIERS - SMT 16 15 4 16 +25C +85C -40C 14 2 12 0 10 20 22 24 26 FREQUENCY (GHz) 28 30 20 21 22 23 24 25 26 27 28 29 30 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC341LC3B v03.0514 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz 14 12 12 10 10 Psat (dBm) P1dB (dBm) Psat vs. Temperature 14 8 6 +25C +85C -40C 4 8 6 +25C +85C -40C 4 2 2 0 0 20 22 24 26 28 30 20 22 FREQUENCY (GHz) 24 28 30 Reverse Isolation vs. Temperature 16 0 12 +25C +85C -40C -10 Pout Gain PAE ISOLATION (dB) 8 26 FREQUENCY (GHz) Power Compression @ 25 GHz Pout (dBm), GAIN (dB), PAE (%) LOW NOISE AMPLIFIERS - SMT P1dB vs. Temperature 4 0 -20 -30 -4 -8 -20 -18 -16 -14 -12 -10 -8 -40 -6 -4 -2 0 2 4 6 20 22 INPUT POWER (dBm) 24 26 28 30 FREQUENCY (GHz) Gain, Power & Noise Figure vs. Supply Voltage @ 25 GHz GAIN (dB), P1dB (dBm), Psat (dBm), NOISE FIGURE (dB) 16 14 12 10 8 Gain P1dB Psat Noise Figure 6 4 2 0 2.75 3.25 3.75 4.25 4.75 5.25 Vdd Supply Voltage (Vdc) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC341LC3B v03.0514 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz Drain Bias Voltage (Vdd) +5.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm +2.7 34 Channel Temperature 175 °C +3.0 35 +4.0 38 +5.0 41 Continuous Pdiss (T= 85 °C) (derate 5.43 mW/°C above 85 °C) 0.489 W Thermal Resistance (channel to ground paddle) 184 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing LOW NOISE AMPLIFIERS - SMT Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC341LC3B Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H341 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC341LC3B v03.0514 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz LOW NOISE AMPLIFIERS - SMT Pin Descriptions 5 Pin Number Function Description 1 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 µF are required. 2, 3, 7-9 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 4, 6, 10, 12 GND Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. 5 RFIN This pin is AC coupled and matched to 50 Ohms from 21 - 29 GHz. 11 RFOUT This pin is AC coupled and matched to 50 Ohms from 21 - 29 GHz. Interface Schematic Application Circuit Component Value C1 100 pF C2 1,000 pF C3 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC341LC3B v03.0514 SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz LOW NOISE AMPLIFIERS - SMT Evaluation PCB List of Materials for Evaluation PCB 112646 Item Description J1, J2 SRI K-connector J3, J4 DC Pin C1 100 pF capacitor, 0402 Pkg.. C2 1,000 pF Capacitor, 0603 Pkg.. C3 2.2µF Capacitor, Tantalum U1 HMC341LC3B Amplifier PCB [2] 112647 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6