LT8309 - Secondary-Side Synchronous Rectifier Driver

LT8309
Secondary-Side
Synchronous Rectifier Driver
Features
Description
Works with DCM and BCM/CrCM Conduction Mode
Flyback Topologies
n V : 4.5V to 40V
CC
n Supports Up to 150V MOSFETs
n 26ns Turn-Off Propagation Delay
n Accurate Minimum On and Off Timers for Reliable
Operation
n Adjustable and Accurate Trip Point: +5mV to –30mV
n1Ω Gate Driver Pull-Down
n SOT-23 5-Lead Package
The LT®8309 is a secondary-side synchronous rectifier
driver that replaces the output rectifier diode in a flyback
topology. By replacing the diode with a N-channel MOSFET,
applications are no longer restricted by the heat constraints
of the output diode. The IC replicates the behavior of a
diode by sensing the drain-to-source voltage to determine
when the current becomes negative. The LT8309's low
minimum on- and off-times help improve noise immunity.
n
The fast propagation delay of 26ns allows applications to
operate in discontinuous conduction mode (DCM) and
critical conduction mode (CrCM). The gate driver features
a 0.8Ω pull-down device for fast turn-offs. The 40V VCC
rating allows the part to be driven from the output voltage or the rectified drain voltage of the MOSFET. A low
quiescent current of 400µA maximizes efficiency at low
output currents.
Applications
High Output Current Flybacks
High Efficiency Flybacks
n
n
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of
Linear Technology Corporation. All other trademarks are the property of their respective owners.
Typical Application
40W, 5V Isolated Telecom Supply
5.33:1
10µF
412k
EN/UVLO
15.4k
60Ω
VIN
100pF
LT3748
RFB
RREF
147k
6.04k
30.9k
0.1µF
TC
GATE
SS
VC
SENSE
GND INTVCC
12.1k
15nF
•
4.7µF
•
400µF
10Ω
95
LT8309
VIN = 48V WITH LT8309
90
VCC
1µF
2.2k
100
VOUT +
5V, 8A
6.2V
DRAIN
INTVCC
GATE
EFFICIENCY (%)
VIN
36V TO
72V
Efficiency vs Load Current
85
VIN = 48V WITH PDS760 DIODE
80
75
GND
12mΩ
70
4.7µF
VOUT–
8309 TA01a
65
0
1
2
3
4
5
6
LOAD CURRENT (A)
7
8
8309 TA01b
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1
LT8309
Absolute Maximum Ratings
Pin Configuration
(Note 1)
VCC.............................................................................40V
INTVCC GATE.............................................................10V
DRAIN......................................................................150V
Maximum Junction Temperature........................... 125°C
Operating Temperature Range (Note 2)
LT8309E............................................. –40°C to 125°C
LT8309I.............................................. –40°C to 125°C
LT8309H............................................. –40°C to 150°C
Storage Temperature Range................... –65°C to 150°C
TOP VIEW
GATE 1
5 DRAIN
GND 2
INTVCC 3
4 VCC
S5 PACKAGE
5-LEAD PLASTIC TSOT-23
θJA = 215°C/W
Order Information
LEAD FREE FINISH
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LT8309ES5#PBF
LT8309ES5#TRPBF
LTGFZ
5-Lead Plastic TSOT-23
–40°C to 125°C
LT8309IS5#PBF
LT8309IS5#TRPBF
LTGFZ
5-Lead Plastic TSOT-23
–40°C to 125°C
LT8309HS5#PBF
LT8309HS5#TRPBF
LTGFZ
5-Lead Plastic TSOT-23
–40°C to 150°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
2
8309fa
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LT8309
Electrical Characteristics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C.
PARAMETER
CONDITIONS
MIN
Input Voltage Range
VCC Quiescent Current
l
TYP
MAX
40
V
300
345
µA
4.5
Not Switching, INTVCC = 8V
UNITS
Comparator
Turn-On Threshold
RS = 0Ω
Turn-Off Threshold
RS = 0Ω
Drain Voltage Latch Reset
l
–69
–57
–45
mV
17
16
21
l
25
28
mV
mV
RS = 0Ω
1.21
V
Minimum Off-Time
75
95
115
ns
Minimum On-Time
310
360
410
ns
9.5
10
10.5
µA
100
117
µA
10
V
7
7.2
V
4.03
V
Drain Current
Out of Pin
l
INTVCC Linear Regulator
INTVCC Quiescent Current
Not Switching, INTVCC = 8V
INTVCC Voltage Range
4.5
INTVCC Regulation Voltage
l
6.8
INTVCC UVLO
Dropout (VCC to INTVCC)
IINTVCC = –10mA, VIN = 7V
Current Limit
l
1
1.3
1.6
V
30
42
55
mA
Gate Driver
Turn-On Propagation Delay (tD(ON))
RS = 0Ω, –100mVOD, VDS to VGATE
31
40
ns
Turn-Off Propagation Delay (tD(OFF))
RS = 0Ω, –100mVOD, VDS to VGATE
26
36
ns
tr GATE Driver Output Rise Time
CL = 3300pF
21
ns
tf GATE Driver Output Fall Time
CL = 3300pF
11
ns
Pull-Up Resistance
2.7
Ω
Pull-Down Resistance
0.8
Ω
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT8309E is guaranteed to meet performance specifications
from 0°C to 125°C operating junction temperature. Specifications over
the –40°C to 125°C operating junction temperature range are assured by
design, characterization and correlation with statistical process controls.
The LT8309I is guaranteed over the full –40°C to 125°C operating junction
temperature range. The LT8309H is guaranteed over the full –40°C to
150°C operating junction temperature range. High junction temperatures
degrade operating lifetimes. Operating lifetime is derated at junction
temperatures greater than 125°C.
Note 3: The LT8309 includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 150°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
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3
LT8309
Typical Performance Characteristics
IVCC vs Temperature
200
IINTVCC vs Temperature
7.8
350
160
7.6
140
7.4
300
250
200
150
50
INTVCC VOLTAGE (V)
180
100
120
100
80
60
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G01
0
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G02
THRESHOLD VOLTAGE (V)
INTVCC VOLTAGE (V)
6
5
4
3
2
4.5
RISING THRESHOLD
4.0
3.5
FALLING THRESHOLD
3.0
–50 –25
0
1
20
30
VCC VOLTAGE (V)
40
8309 G04
VCC = 7V
VCC = 7V
TEMP = 150°C
2.0
TEMP = 100°C
1.5
TEMP = –50°C
TEMP = 25°C
1.0
0.5
0
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G05
10
30
20
INTVCC CURRENT (mA)
0
40
8309 G06
Minimum On-Time and Off-Time
vs Temperature
60
400
50
350
ILOAD = 5mA
ILOAD = 0mA
0.5
0
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G07
300
40
TIME (ns)
ILOAD = 10mA
INTVCC CURRENT LIMIT (mA)
ILOAD = 20mA
1.0
4
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G03
MINIMUM ON-TIME
1.5
0
–50 –25
0
INTVCC Regulator Dropout
vs INTVCC Current
INTVCC Current Limit
vs Temperature
INTVCC Dropout vs Temperature
2.0
6.6
2.5
7
10
6.8
6.0
–50 –25
5.0
8
0
7.0
INTVCC Undervoltage Lockout
vs Temperature
INTVCC Voltage vs VCC Voltage
0
7.2
6.2
0
–50 –25
INTVCC REGULATOR DROPOUT (V)
0
INTVCC vs Temperature
6.4
40
20
0
–50 –25
INTVCC DROPOUT (V)
8.0
400
INTVCC IQ CURRENT (µA)
VCC IQ CURRENT (µA)
450
30
20
200
150
10
0
–50 –25
250
MINIMUM OFF-TIME
100
0
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G08
50
–100
–50
50
100
0
TEMPERATURE (°C)
150
200
8309 G09
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LT8309
Typical Performance Characteristics
Comparator Turn-On Threshold
vs Temperature
Comparator Turn-Off Threshold
vs Temperature
–40
40
12
–45
35
10
8
6
4
2
TURN-OFF THRESHOLD (mV)
14
TURN-ON THRESHOLD (mV)
DRAIN PIN CURRENT (µA)
DRAIN Pin Current
vs Temperature
–50
–55
–60
–65
–70
0
–80
–50 –25
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G10
Latch Reset Threshold
vs Temperature
0
15
10
GATE Rise and Fall Time vs Charge
0
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G12
GATE Current vs Charge
4.0
1.35
3.5
150
1.25
1.20
1.15
RISE TIME
100
50
1.10
GATE SINK CURRENT
3.0
TIME (ns)
1.30
TIME (ns)
THRESHOLD VOLTAGE (V)
20
0
–50 –25
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G11
200
1.40
2.5
2.0
1.5
GATE SOURCE CURRENT
1.0
FALL TIME
1.05
1.00
–50 –25
25
5
–75
0
–50 –25
30
0.5
0
25 50 75 100 125 150
TEMPERATURE (°C)
8309 G13
0
0
30
90
60
CHARGE (nC)
150
120
8309 G14
0
0
30
90
60
CHARGE (nC)
120
150
8309 G15
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5
LT8309
Pin Functions
GATE (Pin 1): N-Channel MOSFET Gate Driver Output.
Switches between INTVCC and GND. Driven to GND during
undervoltage lockout of INTVCC.
VCC (Pin 4): Input Voltage. This pin supplies current to the
internal start-up circuitry and to the INTVCC LDO. This pin
must be locally bypassed with a capacitor.
GND (Pin 2): Ground.
DRAIN (Pin 5): Current Sense Pin. This pin senses
the voltage across the drain-to-source of the external
N-channel MOSFET. A series resistor is needed to set the
offset voltage and needs to be at least 800Ω. The offset
is equal to:
INTVCC (Pin 3): Regulated Supply for Internal Loads,
and GATE Driver. Supplied from VCC and regulates to 7V
(typical). INTVCC must be bypassed with a 4.7µF capacitor
placed close to the pin.
R 

20mV •  1−


2000 
Block Diagram
4
VCC
1.25V
10µA
10µA
+
–
INTVCC
VBIAS
5
DRAIN
3
+
–
VBIAS
INTVCC
1
LOGIC
GATE
GND
2
8309 BD
6
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LT8309
Operation
The LT8309 is a synchronous rectifier designed for
boundary conduction mode/critical conduction mode
and discontinuous mode flyback converters. Existing
solutions use a pulse signal from the primary side to
control the synchronous rectifier, but the LT8309 senses
the drain-source voltage of the MOSFET to control the
synchronous rectifier. This technique not only eliminates a transformer, but allows it to work with Linear
Technology’s line of no-opto critical conduction flyback
converters. Synchronous rectification improves efficiency and more importantly increases the maximum
output current when compared to nonsynchronous
designs.
The LT8309 imitates the behavior of a diode but replaces the forward voltage with the RDS(ON) of an external
N-channel MOSFET. The LT8309 includes an LDO, a very
fast comparator and a powerful gate driver.
An external resistor connects the part’s DRAIN pin to the
drain of the MOSFET. This resistor sets the trip point of
the comparator with a precise internal current source. To
set the trip point to –10mV, a 3000Ω resistor is needed.
The trip point decreases by 1mV for every 100Ω added
to this drain resistor. This trip point will be referred to as
VOFFSET. Figure 1 shows the drain waveform on top and
the gate waveform on the bottom. The gate node goes high
when the drain node goes 74mV below the VOFFSET. The
comparator’s output is ignored for a minimum on-time to
eliminate the chance that ringing triggers the comparator.
After the minimum on-time, the comparator is ready to
trigger at the VOFFSET voltage. Once the drain voltage goes
above VOFFSET, the gate turns off after a very fast propagation delay, t D(OFF). The body diode begins to conduct again
before the current reaches 0A. The drain voltage needs to
go above 1.21V and then wait for the minimum off-time
before the comparator is re-enabled.
GND
VOFFSET
80mV
t MIN(ON)
t D(ON)
t MIN(OFF)
t D(OFF)
8309 F01
Figure 1. Drain and Gate Waveforms
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7
LT8309
Operation
Undervoltage Lockout
Setting the DRAIN Pin Resistor
The part features a INTVCC undervoltage lockout (UVLO)
to prevent switching until the INTVCC voltage is above 4V.
The DRAIN pin resistor sets when the LT8309 turns off
the MOSFET. The trip point, VOFFSET, is set with the following equation:
INTVCC LDO
VOFFSET = 20mV – 10µA • RDRAIN
An internal LDO regulator provides a regulated 7V output
from the VIN pin to the INTVCC pin. An output capacitor is
needed to provide the current needed for the gate driver.
A 4.7µF capacitor is recommended and must be placed
as close as possible to the INTVCC pin. The current limit
for the LDO is 42mA.
RDRAIN is the resistor connected between the drain of
the MOSFET and the DRAIN pin of the part. RDRAIN
needs to be at least 800Ω to operate correctly. For
most applications, VOFFSET should be set at –5mV. High
RDS(ON) MOSFETs may require a more negative VOFFSET
voltage to keep the drain-to-source current from reversing.
If the current is reversing, decrease VOFFSET in 5mV steps
to eliminate the cross-conduction.
MOSFET Selection
A MOSFET’s RDS(ON) is important to the operation of the
LT8309. The drain-source voltage is used to determine
when to turn off the MOSFET. The peak current through
the MOSFET times the MOSFET’s RDS(ON) should be
above 75mV. When this voltage is too low, the high speed
comparator may trip early due to ringing on the DRAIN
pin. When this voltage is too high, the MOSFET dissipates
a large amount of power which causes efficiency to go
down and may cause thermal issues with the MOSFET.
Short-Circuit Operation
In the Typical Application diagram on Page 1, the VCC pin
is connected to the output of the flyback converter. During
an output short-circuit condition, the LT8309 is off and the
body diode of the MOSFET must handle the short-circuit
condition. This puts additional thermal requirements on
the MOSFET. The drain voltage of the MOSFET is equal
to VIN / N in short-circuit and capable of powering the
LT8309 with the circuit in Figure 2. This allows the LT8309
VIN
VOUT
•
•
VCC
DRAIN
LT8309
GATE
INTVCC
GND
8309 F02
Figure 2. Short-Circuit Application Circuit
8
8309fa
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LT8309
Operation
to operate during a short, and the current will flow through
the low resistance channel of the MOSFET instead of its
body diode. Make sure to use a resistor in series with the
diode to keep VCC below 40V.
Layout Considerations
The main current loop is the MOSFETs drain-to-source
current. This should not share the same ground path as
the LT8309. The drain resistor needs to sense directly at
the drain of the MOSFET and not have any current of the
drain current flow through its metal trace. The drain node
of the MOSFET is used as the heat sink and will need to
be sized according to the power dissipation requirements.
Figure 3 is an example layout of the LT8309.
Effects of the Body Diode
When the discontinuous ring voltage goes below ground,
the body diode of the primary-side MOSFET turns on and
begins to conduct current. This diode clamps the voltage
Figure 3. Demo Board Topside Silkscreen
to a diode drop below ground. When the current reverses
direction, the diode does not turn off immediately, and
conducts current in the opposite direction for a small period
of time. This is known as the reverse-recovery time. During
this time, the magnetizing inductance of the transformer
stores energy just like it does when the MOSFET turns
on. When the primary-side body diode finally turns off,
the energy is transferred to the secondary side and may
be enough to turn on the body diode of the secondary
MOSFET. Then, the LT8309 turns on its MOSFET for a
second time. Since this happens during the discontinuous
ring, the primary side may turn on during this time and
cause cross conduction. If this problem does occur, one
way to improve the reverse-recovery time of the primary
side’s MOSFET is to add a parallel Schottky diode, which
will conduct most of the current and turn off much faster
than the body diode. Another way of eliminating this issue
is by sizing the turns ratio so that the discontinuous ring
never goes below ground.
Figure 4. Demo Board Topside Metal
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9
LT8309
Typical Applications
60W, 12V Output, Isolated Telecom Supply
VIN
36V TO
72V
2.67:1 PULSE: PA1736NL
10µF
100Ω
412k
EN/UVLO
15.4k
VIN
LT3748
220pF
6.04k
57.6k
TC
GATE
SS
VC
SENSE
GND INTVCC
INFINEON:
BSC320N20NS3
470pF
300µF
10Ω
VCC
1µF
2.37k
INFINEON:
BSC047N08NS3
9mΩ
0.1µF
5k
•
158k
RFB
RREF
VOUT+
12V, 5A
•
4.7µF
LT8309
DRAIN
GATE
INTVCC
13V
CENTRAL SEMI:
CMZ5928B
GND
4.7µF
VOUT–
8309 TA02
47nF
10
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LT8309
Typical Applications
40W, 5V Isolated Telecom Supply
VIN
36V TO
72V
5.33:1 PULSE: PA1735NL
10µF
60Ω
412k
EN/UVLO
15.4k
VIN
LT3748
100pF
6.04k
30.9k
0.1µF
TC
GATE
SS
VC
SENSE
GND INTVCC
•
400µF
10Ω
147k
RFB
RREF
INFINEON:
BSC320N20NS3
VOUT+
5V, 8A
•
VCC
1µF
2.15k
INFINEON:
BSC028N06LS
12mΩ
12.1k
4.7µF
LT8309
DRAIN
GATE
INTVCC
6.2V
CENTRAL SEMI:
CMZ5920B
GND
4.7µF
VOUT–
8309 TA03
15nF
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11
LT8309
Package Description
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
S5 Package
3-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1635)
0.62
MAX
0.95
REF
2.90 BSC
(NOTE 4)
1.22 REF
1.4 MIN
3.85 MAX 2.62 REF
2.80 BSC
1.50 – 1.75
(NOTE 4)
PIN ONE
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45 TYP
5 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
0.30 – 0.50 REF
0.09 – 0.20
(NOTE 3)
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
12
0.01 – 0.10
1.00 MAX
DATUM ‘A’
1.90 BSC
S5 TSOT-23 0302
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LT8309
Revision History
REV
DATE
DESCRIPTION
A
11/14
Added H-Grade Version
PAGE NUMBER
2, 3
8309fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection
of its circuits
as described
herein will not infringe on existing patent rights.
For more
information
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13
LT8309
Typical Application
33W, 3.3V Isolated Telecom Supply
VIN
36V TO
72V
8:1.4 PULSE: PA1477NL
10µF
EN/UVLO
15.4k
VIN
150pF
LT3748
RFB
RREF
TC
GATE
SS
VC
SENSE
GND INTVCC
INFINEON:
BSC320N20NS3
0.1µF
4.7µF
22nF
1000µF
20Ω
VCC
1µF
2k
INFINEON:
BSC016N04LS
LT8309
3.9V
CENTRAL SEMI:
CMZ5915B
DRAIN
GATE
INTVCC
GND
4.7µF
15mΩ
40Ω
2.5k
•
150k
6.04k
19.1k
•
60Ω
412k
VOUT+
3.3V, 10A
VOUT–
•
8309 TA04
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14 Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
For more information www.linear.com/LT8309
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com/LT8309
8309fa
LT 1114 REV A • PRINTED IN USA
 LINEAR TECHNOLOGY CORPORATION 2014