Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC1086F10 v04.0714 Amplifiers - Linear & Power - SMT 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086F10 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 11 dB • General Communications High Output IP3: +46 dBm • Radar Small Signal Gain: 23 dB • EW/ECM Supply Voltage: Vdd = +28V @ 1100 mA 50 Ohm Matched Input/Output 10-Lead Flange Mount Package Functional Diagram General Description The HMC1086F10 is a 25W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 2 and 6 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 23 dB of small signal gain, +44.5 dBm saturated output power, and delivers +46 dBm output IP3 at +33 dBm output power per tone. The amplifier draws 1100 mA quiescent current from a +28V DC supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. Electrical Specifications, TA = +25° C, Vgg = Vgg1 = Vgg2, Vdd = Vdd1 = Vdd2 = +28V, Idd = 1100 mA [1] Parameter Min. Frequency Range Typ. Max. Min. 2-4 Small Signal Gain 20 Gain Flatness Gain Variation Over Temperature 23 Typ. 4-6 21 24 Max. Units GHz dB ±1 ±0.5 dB 0.03 0.03 dB/ °C dB Input Return Loss 15 17 Output Return Loss 12 12 dB Output Power for 4dB Compression (P4dB) 41 41 dBm Power Gain for 4dB Compression (P4dB) Saturated Output Power (Psat) [2] 20 20 dB 44.5 44.5 dBm dBm 46 46 Power Added Efficiency (PAE) 35 32 % Total Supply Current (Id1 + Id2) 1100 1100 mA Output Third Order Intercept (IP3) [1] Adjust Vgg between -8 to 0V to achieve Idd = 1100 mA typical. [2] Measurement taken at Pout / tone = +33 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Gain & Return Loss Gain vs. Temperature 30 25 10 Gain (dB) Response (dB) 20 0 -10 -20 20 15 -30 -40 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 10 1.5 7.5 2 2.5 3 S21 3.5 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) FREQUENCY (GHz) S11 25 C S22 85 C -40 C Input Return Loss vs. Temperature Gain vs. Vdd 0 30 -5 -10 Return Loss (dB) Gain (dB) 25 20 -15 -20 -25 -30 15 -35 10 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -40 1.5 6.5 2 2.5 3 24V 3.5 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz) FREQUENCY (GHz) 28V 25 C 32V Output Return Loss vs. Temperature 85 C -40 C Amplifiers - Linear & Power - SMT 30 Pout vs. Frequency 0 50 -2 45 -6 Pout (dBm) Return Loss (dB) -4 -8 -10 -12 40 35 -14 30 -16 -18 -20 1.5 25 2 2.5 3 3.5 4 4.5 5 5.5 6 85 C 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) 25 C 6.5 -40 C P1dB P4dB Psat For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz 50 50 45 45 P4dB (dBm) P4dB (dBm) P4dB vs. Supply Voltage 40 35 40 35 30 30 2 3 4 5 6 2 3 FREQUENCY (GHz) +25 C +85 C 24V -40 C 45 45 Psat (dBm) 50 40 35 6 28V 32V 40 35 30 30 2 3 4 5 6 2 3 FREQUENCY (GHz) +25 C 4 5 6 FREQUENCY (GHz) +85 C -40 C 24V 28V 32V Psat vs. Supply Current 50 50 45 45 Psat (dBm) P4dB (dBm) 5 Psat vs. Supply Voltage 50 P4dB vs. Supply Current 40 35 40 35 30 30 2 3 4 5 6 2 3 FREQUENCY (GHz) 550 mA 3 4 FREQUENCY (GHz) Psat vs. Temperature Psat (dBm) Amplifiers - Linear & Power - SMT P4dB vs. Temperature 1100 mA 4 5 6 FREQUENCY (GHz) 1650 mA 550 mA 1100 mA 1650 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Output IP3 vs. Temperature, Pout/tone = +33 dBm Power Gain vs. Frequency 30 48 20 IP3 (dBm) POWER GAIN (dB) 25 15 46 44 10 42 5 40 0 2 3 4 5 6 2 3 4 P4dBm Psat +25 C 6 +85 C -40 C Output IP3 vs. Supply Current, Pout/tone = +33 dBm 50 50 48 48 IP3 (dBm) IP3 (dBm) Output IP3 vs. Supply Voltage, Pout/tone = +33 dBm 46 44 42 46 44 42 40 40 2 3 4 5 6 2 3 4 FREQUENCY (GHz) 24V 5 6 FREQUENCY (GHz) 28V 32V 550 mA Output IM3 @ Vdd= +24V 1100 mA 1650 mA Output IM3 @ Vdd= +28V 50 50 40 40 IM3 (dBc) IM3 (dBc) 5 FREQUENCY (GHz) FREQUENCY (GHz) Amplifiers - Linear & Power - SMT 50 30 20 30 20 10 10 26 28 30 32 34 36 38 40 26 28 30 Pout/tone(dBm) 2 GHz 3 GHz 4 GHz 32 34 36 38 40 Pout/TONE (dBm) 5 GHz 6 GHz 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Output IM3 @ Vdd= +32V Power Compression @ 2 GHz Pout(dBm), GAIN(dB), PAE(%) 30 20 10 50 3000 45 2790 40 2580 35 2370 30 2160 25 1950 20 1740 15 1530 10 1320 5 1110 900 0 26 28 30 32 34 36 38 40 5 Pout/TONE (dBm) 7 9 11 13 15 17 19 21 23 25 27 29 31 33 INPUT POWER (dBm) 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz Pout Gain PAE Idd Power Compression @ 6 GHz 3300 50 3000 45 3060 45 2790 40 2820 40 2580 35 2580 35 2370 30 2340 30 2160 25 2100 25 1950 20 1860 20 1740 15 1620 15 1530 10 1380 10 1320 5 1140 5 1110 0 900 5 7 9 Pout(dBm), GAIN(dB), PAE(%) 50 900 0 11 13 15 17 19 21 23 25 27 29 31 33 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 INPUT POWER (dBm) Pout INPUT POWER (dBm) Gain PAE Pout Gain Idd Idd Gain & Power vs. Supply Voltage @ 4 GHz Gain & Power vs. Supply Current @ 4 GHz PAE 50 Gain (dB), P4dB (dBm), Psat (dBm) Gain (dB), P4dB (dBm), Psat (dBm) Idd (mA) Pout(dBm), GAIN(dB), PAE(%) Power Compression @ 4 GHz 50 45 40 35 30 25 20 45 40 35 30 25 20 24 26 28 30 32 550 650 750 850 950 1050 1150 1250 1350 1450 1550 1650 Idd (mA) Vdd (V) GAIN(dB) P4dB(dBm) 5 Idd (mA) IM3 (dBc) 40 Idd (mA) Amplifiers - Linear & Power - SMT 50 Psat(dBm) GAIN(dB) P4dB(dBm) Psat(dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz 90 -10 80 SECOND HARMONIC (dBc) 0 ISOLATION (dB) -20 -30 -40 -50 -60 -70 -80 70 60 50 40 30 20 10 -90 0 2 3 4 5 6 2 3 4 FREQUENCY (GHz) +25 C +85 C +25 C -40 C Second Harmonics vs. Supply Voltage 6 +85 C -40 C Second Harmonics vs. Pin 90 90 80 80 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 5 FREQUENCY(GHz) 70 60 50 40 30 20 10 70 60 50 40 30 20 10 0 0 2 3 4 5 6 2 3 4 FREQUENCY(GHz) 24V 28V 5 6 FREQUENCY(GHz) +9 dBm +15 dBm +21 dBm 32V +27 dBm +33 dBm Amplifiers - Linear & Power - SMT Second Harmonics vs. Temperature Reverse Isolation vs. Temperature Power Dissipation 60 POWER DISSIPATION (W) 55 50 45 40 35 30 25 20 6 9 12 15 18 21 24 27 30 33 INPUT POWER (dBm) 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings Amplifiers - Linear & Power - SMT Drain Bias Voltage (Vdd) +32 Vdc Vdd (V) Idd (mA) +24 1100 Gate Bias Voltage (Vgg) -8 to 0 Vdc RF Input Power (RFIN) +33 dBm +28 1100 Channel Temperature 225 °C +32 1100 Maximum Pdiss (T = 85 °C) (derate 432 mW/°C above 85 °C) 60.5W Thermal Resistance (channel to flange bottom) 2.31 °C/W Maximum Forward Gate Current (mA) 11 mA 2.) Set Vdd to +28V. 6:1 3.) Ramp gate voltage until quiescent drain current = 1100 mA. Maximum VSWR [1] Adjust Vgg to achieve Idd = 1100 mA Amplifier Turn-on Procedure: 1.) Set Vgg to -5V. Storage Temperature -65 to 150 °C Operating Temperature -55 to 85 °C [2] 4.) Apply RF input power. [1] Restricted by maximum power dissipation. [2] This device is not surface mountable and is not intended nor suitable to be used in a solder reflow process. This device must not be exposed to ambient temperatures above +150°C. Amplifier Turn-off Procedure: 1.) Remove RF input power. 2.) Set Vgg to -5V. 3.) Set Vdd to 0V. 4.) Set Vgg to 0V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Amplifiers - Linear & Power - SMT Outline Drawing Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [1] HMC1086F10 Copper 15 Tungston 85 NiAu N/A [2] H1086 XXXX [1] 4-Digit lot number XXXX [2] This device is not rated for Moisture Sensitivity Level. The HMC1086F10 is a non-hermetic, air cavity device which is not surface mountable and is not intended nor suitable to be used in a solder reflow process. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Amplifiers - Linear & Power - SMT Pin Descriptions 9 Pin Number Function Description 1, 5 Vgg2 Gate control voltage for second stage. 2, 4 Vgg1 Gate control voltage for first stage. 3 RFIN This pin is DC coupled and matched to 50 Ohms. 6, 10 Vdd1,2 Drain bias for first and second stage 7, 9 NC These pins are not connected internally, however all data shown was measured with these pins connected to RF/DC ground externally. 8 RFOUT This pad is RF coupled and matched to 50 Ohms. Package Base GND The package base must be mounted to a suitable heat sink for RF & DC ground. Recommended mounting screws are #0-80 socket cap screws. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Amplifiers - Linear & Power - SMT Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10 HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Amplifiers - Linear & Power - SMT Evaluation PCB Evaluation Order Information Item Contents Part Number Evaluation PCB HMC1086F10 Evaluation PCB EVAL01-HMC1086F10 [1] [1] Reference this number when ordering Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC1086F10 Item Description J2, J3 SRI K Connector J1 DC Connector J4, J5 Preform jumpers C1 - C6 1 uF Capacitor, 0602 Pkg. C7 - C8 10 uF Capacitor, 1210 Pkg. U1 HMC1086F10 PCB [1] 600-00619-00 Evaluation PCB [1] Circuit Board Material: Rogers 4350 or Arlon 25FR 11 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1086F10 v04.0714 25 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Amplifiers - Linear & Power - SMT Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 12