Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC994LP5E v01.0314 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Typical Applications Features The HMC994LP5E is ideal for: P1dB Output Power: +27 dBm • Test Instrumentation Psat Output Power: +29 dBm • Microwave Radio & VSAT High Gain: 13 dB • Telecom Infrastructure Output IP3: +38 dBm • Military & Space Supply Voltage: Vdd = +10V @ 250 mA • Fiber optics 50 Ohm Matched Input/Output 32 Lead 5x5 mm SMT Package: 25 mm² Functional Diagram General Description The HMC994LP5E is a GaAs pHEMT MMIC Distributed Wideband Power Amplifier which operates between DC and 28 GHz. The amplifier provides 13 dB of gain, +29 dBm of saturated output power, and 23% PAE from a +10V supply. With up to +38 dBm Output IP3 the HMC994LP5E is ideal for high linearity applications in military and space as well as point-to-point and pointto-multi-point radios. The HMC994LP5E exhibits a very flat gain from 4 to 16 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC994LP4E amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5x5 mm surface mount package. Electrical Specifications, TA = +25° C, Vdd = +10V, Vgg2 = +3.5V Idd = 250 mA [1] Parameter Min. Frequency Range Typ. Max. Min. DC - 10 Gain 11 Typ. Max. Min. 10 - 20 13 11 Typ.. Max. 20 - 28 13 11 Units GHz 13 dB Gain Flatness ±0.5 ±0.5 ±0.5 dB Gain Variation Over Temperature 0.008 0.011 1.016 dB/ °C dB Input Return Loss 18 15 12 Output Return Loss 18 16 12 dB 25 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Noise Figure Total Supply Current 26 28 24.5 27 22.5 30 29.5 28 dBm 41 37 35 dBm 4 250 4 300 250 5 300 250 dB 300 mA [1] Adjust Vgg1 between -2 to 0V to achieve Idd = 250 mA typical. [2] Measurement taken at Pout / tone = +16 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz 18 10 16 0 14 -10 12 -20 10 -30 8 -40 6 0 5 10 15 20 25 30 35 40 0 4 8 FREQUENCY (GHz) S21 S11 S22 20 24 28 0 -10 -10 -20 -30 +85 C -40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) 16 +25 C Input Return Loss vs. Temperature -40 -20 -30 -40 0 5 10 15 20 25 30 0 5 10 FREQUENCY (GHz) +25 C 15 20 25 30 FREQUENCY (GHz) +85 C -40 C +25 C Noise Figure vs. Temperature +85 C -40 C P1dB vs. Temperature 10 32 30 P1dB (dBm) 8 NOISE FIGURE (dB) 12 FREQUENCY (GHz) Amplifiers - Linear & Power - SMT Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Gain & Return Loss 6 4 28 26 24 2 22 20 0 0 4 8 12 16 20 24 28 0 5 10 +25 C +85 C 15 20 25 30 FREQUENCY (GHz) FREQUENCY (GHz) -40 C +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz 32 30 30 28 28 Psat (dBm) P1dB (dBm) Psat vs. Temperature 32 26 26 24 24 22 22 20 20 0 5 10 15 20 25 30 0 5 10 FREQUENCY (GHz) +8V 15 20 25 30 FREQUENCY (GHz) +10V +11V +25 C +85 C -40 C P1dB vs. Supply Current Psat vs. Supply Voltage 32 32 30 30 28 28 P1dB (dBm) Psat (dBm) Amplifiers - Linear & Power - SMT P1dB vs. Supply Voltage 26 26 24 24 22 22 20 20 0 5 10 15 20 25 30 0 5 10 FREQUENCY (GHz) +8V 15 20 25 30 FREQUENCY (GHz) +10V 175 mA +11V 250 mA Output IP3 vs. Temperature, Pout/tone = +16 dBm Psat vs. Supply Current 44 32 42 30 IP3 (dBm) Psat (dBm) 40 28 26 38 36 34 24 32 22 30 28 20 0 5 10 15 20 25 30 0 5 10 175 mA 3 15 20 25 30 FREQUENCY (GHz) FREQUENCY (GHz) 250 mA +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz 90 42 80 40 70 60 38 36 34 50 40 30 32 20 30 10 28 0 0 5 10 15 20 25 30 4 6 8 10 FREQUENCY (GHz) +8V +10V 3 GHz 6 GHz 9 GHz +11V Output IM3 @ Vdd =+10V 14 16 18 13 GHz 17 GHz 21 GHz 24 GHz 27 GHz Output IM3 @ Vdd = +11V 80 70 70 60 60 50 50 IM3 (dBc) IM3 (dBc) 12 Pout/TONE (dBm) 40 40 30 30 20 20 10 10 0 0 4 6 8 10 12 14 16 4 18 6 8 10 3 GHz 6 GHz 9 GHz 13 GHz 17 GHz 21 GHz 3 GHz 6 GHz 9 GHz 24 GHz 27 GHz Reverse Isolation vs. Temperature 14 16 18 13 GHz 17 GHz 21 GHz 24 GHz 27 GHz Power Compression @ 16 GHz 32 Pout (dBm), GAIN (dB), PAE (%) 0 -10 -20 ISOLATION (dB) 12 Pout/TONE (dBm) Pout/TONE (dBm) Amplifiers - Linear & Power - SMT Output IM3 @ Vdd = +8V 44 IM3 (dBc) IP3 (dBm) Output IP3 vs. Supply Voltage, Pout/tone = +16 dBm -30 -40 -50 -60 -70 -80 28 24 20 16 12 8 4 0 0 3 6 9 12 15 18 21 24 27 30 0 3 6 FREQUENCY (GHz) +25 C +85 C 9 12 15 18 INPUT POWER (dBm) -40 C Pout Gain PAE For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Gain & Power vs. Supply Current @ 16 GHz Gain & Power vs. Supply Voltage @ 16 GHz Gain (dB), P1dB (dBm), Psat (dBm) Gain (dB), P1dB (dBm), Psat (dBm) 35 30 25 20 15 10 5 30 25 20 15 10 5 175 200 225 250 8 9 Idd (mA) Psat (dBm) GAIN (dB) P1dB (dBm) 70 3.5 60 SECOND HARMONIC (dBc) 4 3 2.5 2 1.5 1 Psat (dBm) 50 40 30 20 10 0.5 0 0 2 4 6 8 10 12 14 16 18 0 4 8 INPUT POWER (dBm) 12 16 20 24 FREQUENCY(GHz) 4 GHz 11 GHz 18 GHz 26 GHz +25C +85C -40C Second Harmonics vs. Pout 70 70 60 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 11 Second Harmonics vs. Temperature @ Pout = 14 dBm Power Dissipation Second Harmonics vs. Vdd @ Pout = 14 dBm 50 40 30 20 10 50 40 30 20 10 0 0 0 4 8 12 16 20 24 0 4 8 +8V +10V 12 16 20 24 FREQUENCY(GHz) FREQUENCY(GHz) 5 10 Vdd (V) GAIN (dB) P1dB (dBm) POWER DISSIPATION (W) Amplifiers - Linear & Power - SMT 35 +11V +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm +18 dBm For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Drain Bias Voltage (Vdd) +12 Vdc Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) Typical Supply Current vs. Vdd Vdd (V) Idd (mA) -3 to 0 Vdc +8 250 For Vdd = 12V, Vgg2 = 5.5V Idd < 200mA +9 250 +10 250 +11 250 For Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) up to 4.5V For Vdd < 8.5V, Vgg2 must remain > 2V RF Input Power (RFIN) +25 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 46.1 mW/°C above 85 °C) 3.0 W Thermal Resistance (channel to ground paddle) 21.6 °C/W Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ESD Sensitivity (HBM) Class 1A Adjust Vgg1 to achieve Idd = 250 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Amplifiers - Linear & Power - SMT Absolute Maximum Ratings Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC994LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 H994 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Amplifiers - Linear & Power - SMT Pin Descriptions Pin Number Function Description 1, 4, 6, 14, 20, 22, Package Bottom GND These pins & exposed ground paddle must be connected to RF/DC ground. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3.5V should be applied to Vgg2 3, 7, 8, 9, 10, 11, 12, 17, 18, 19, 23, 24, 25, 26, 27, 28, 31, 32 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 5 RFIN This pin is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 13 Vgg1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. 15 ACG4 Interface Schematic Low Frequency termination. Attach bypass capacitor per application circuit herein. 16 ACG3 21 RFOUT & Vdd 29 ACG2 RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. Low frequency termination. Attach bypass capacitor per application circuit herein 30 7 ACG1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Evaluation Order Information Item Contents Part Number Evaluation PCB Only HMC994LP5E Evaluation PCB Eval01-HMC994LP5E [1] Amplifiers - Linear & Power - SMT Evaluation PCB [1] Reference this number when ordering Evaluation PCB Only List of Materials for Evaluation PCB EVAL01-HMC994LP5E Item Description J1, J2, J5, J6 PCB Mount SMA RF Connector J3, J4 DC Pins. C1 - C4 1000 pF Capacitor, 0402 Pkg. C5 - C8 10 kpF Capacitor, 0402 Pkg. C9 - C11 4.7 uF Capacitor, Tantalum. R1, R2 0 Ohm Resistor, 0402 Pkg. U1 HMC994LP5E PCB [1] 127135 Evaluation PCB. The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Circuit Board Material: Rogers 4350 or Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Amplifiers - Linear & Power - SMT Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC994LP5E v01.0314 GaAs pHEMT MMIC POWER AMPLIFIER, DC - 28 GHz Amplifiers - Linear & Power - SMT Notes For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10