Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC996LP4E v01.0112 Variable Gain Amplifier - SMT VARIABLE GAIN AMPLIFIER 5 - 12 GHz Typical Applications Features The HMC996LP4E is ideal for: Wide Gain Control Range: 22 dB • Point-to-Point Radio Single Control Voltage: -1 to -4.5V • Point-to-Multi-Point Radio Output IP3 @ Max Gain: +34 dBm • EW & ECM Subsystems Output P1dB: +22 dBm Low Noise Figure 2dB @ max gain • X-Band Radar No External Matching • Test Equipment & Sensors 24 Lead 4x4 mm SMT Package: 16 mm2 Functional Diagram General Description The HMC996LP4E is a GaAs PHEMT MMIC analog variable gain amplifier and / or driver amplifier which operates between 5 and 12 GHz. Ideal for microwave radio applications, the amplifier provides up to 18.5 dB of gain, output P1dB of up to +23 dBm, and up to +34 dBm of output IP3 at maximum gain, while requiring only 170 mA from a +5V supply. Gain control voltage pin (Vctrl) is provided to allow variable gain control up to 22 dB. Gain flatness is excellent making the HMC996LP4E ideal for EW, ECM and radar applications. The HMC996LP4E is housed in a RoHS compliant 4 x 4 mm QFN leadless package and is compatible with high volume surface mount manufacturing. Electrical Specifications, TA = +25°C, Vdd1, 2= 5V, Vctrl= -4.5V, Idd= 120 mA* Parameter Min. Frequency Range Typ. Max. Min. Max. Units 8.5 - 12 GHz 16 dB ±1 dB 0.006 dB/ °C 20 dB 2.5 2 dB Input Return Loss 17 9 dB Output Return Loss 23 7 dB 23 dBm Gain 5 - 8.5 Typ. 16 Gain Flatness 0.006 15 Noise Figure Output Power for 1 dB Compression (P1dB) 13 ±0.5 Gain Variation Over Temperature Gain Control Range 18.5 19 22 22 15 20 Saturated Output Power (Psat) 23 24 dBm Output Third Order Intercept (IP3) 34 34 dBm Total Supply Current (Idd) 120 120 mA *Set Vctrl = -4.5V and then adjust Vgg1, 2 between -2V to 0V to achieve Idd = 120 mA typical. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC996LP4E v01.0112 VARIABLE GAIN AMPLIFIER 5 - 12 GHz Gain vs. Control Voltage Range Gain vs. Control Voltage 25 Vctrl = -3.1V Vctlr = -3.4V 20 20 15 GAIN (dB) GAIN (dB) 15 5 GHz 6 GHz 8 GHz 10 GHz 11 GHz 12 GHz 10 5 Vctrl = -2.8V Vctrl = -2,5V Vctrl = -2.2V 0 10 5 0 -5 Vctrl = -1.6V -5 Vctrl = -1.9V Vctrl = -1.0V -10 -10 5 6 7 8 9 10 11 12 -4 -3.7 -3.4 FREQUENCY (GHz) -2.5 -2.2 -1.9 -1.6 -1.3 -1 Gain vs. Temperature 25 30 20 +25C +85C -40C 22 GAIN (dB) 10 S21 S11 S22 0 19 16 -10 13 -20 -30 10 4 5 6 7 8 9 10 11 12 5 13 6 7 FREQUENCY (GHz) 8 9 10 11 12 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) -2.8 CONTROL VOLTAGE (V) Broadband Gain & Return Loss RESPONSE (dB) -3.1 Variable Gain Amplifier - SMT 25 Vctrl = -4.5V -10 -15 -20 -25 +25C +85C -40C -10 -15 -20 -25 -30 -30 -35 5 6 7 8 9 FREQUENCY (GHz) 10 11 12 5 6 7 8 9 10 11 12 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC996LP4E v01.0112 VARIABLE GAIN AMPLIFIER 5 - 12 GHz Input Return Loss @ Control Voltage Extreme Output Return Loss @ Control Voltage Extreme -5 RETURN LOSS (dB) RETURN LOSS (dB) 0 -4.5 Volts -1.0 Volts -5 -10 -15 -20 -25 -4.5 Volts -1.0 Volts -10 -15 -20 -25 -30 -30 -35 5 6 7 8 9 10 11 12 5 6 8 9 10 12 Noise Figure vs. Control Voltage Noise Figure vs. Temperature 18 7 16 NOISE FIGURE (dB) 6 5 +25C +85C -40C 4 3 2 14 12 10 8 6 GHz 7 GHz 8 GHz 9 GHz 10 GHz 11 GHz 6 4 1 2 0 5 6 7 8 9 10 11 -4 12 -3.5 FREQUENCY (GHz) -3 -2.5 -2 -1.5 -1 CONTROL VOLTAGE (V) P1dB vs. Temperature Psat vs. Temperature 30 30 Vctrl = -4.5V Vctrl = -4.5V 25 25 20 Psat (dBm) P1dB (dBm) 11 FREQUENCY (GHz) 0 15 Vctrl = -1V 10 20 Vctrl = -1V 15 10 +25C +85C -40C 5 +25C +85C -40C 5 0 0 5 6 7 8 9 FREQUENCY (GHz) 3 7 FREQUENCY (GHz) NOISE FIGURE (dB) Variable Gain Amplifier - SMT 0 10 11 12 5 6 7 8 9 10 11 12 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC996LP4E v01.0112 VARIABLE GAIN AMPLIFIER 5 - 12 GHz Reverse Isolation vs. Temperature Output IP3 vs. Temperature 0 40 +25C +85C -40C 30 -30 IP3 (dBm) ISOLATION (dB) -20 35 -40 -50 +25C +85C -40C 25 20 -60 15 -70 Vctrl=-1V, Pout=-14 dBm/tone -80 10 5 6 7 8 9 10 11 12 5 6 7 IP3 and Gain @ 6 GHz, Pin = -10 dBm 10 11 12 40 35 35 OIP3 GAIN IIP3 30 IP3 (dBm), GAIN (dB) IP3 (dBm), GAIN (dB) 9 IP3 and Gain @ 8 GHz, Pin = -10 dBm 40 25 20 15 10 5 0 -5 -4.5 8 FREQUENCY (GHz) FREQUENCY (GHz) OIP3 GAIN IIP3 30 25 20 15 10 5 Variable Gain Amplifier - SMT Vctrl=-4.5V, Pout=7 dBm/tone -10 0 -4 -3.5 -3 -2.5 -2 -1.5 -5 -4.5 -1 -4 -3.5 CONTROL VOLTAGE (V) -3 -2.5 -2 -1.5 -1 CONTROL VOLTAGE (V) IP3 and Gain @ 10 GHz, Pin = -10 dBm 40 IP3 (dBm), GAIN (dB) 35 OIP3 GAIN IIP3 30 25 20 15 10 5 0 -5 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 CONTROL VOLTAGE (V) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC996LP4E v01.0112 VARIABLE GAIN AMPLIFIER 5 - 12 GHz Bias Voltage Absolute Maximum Ratings Variable Gain Amplifier - SMT Drain Bias Voltage (Vdd1, 2) +5.5V Vdd1,2(V) Idd Total (mA) 120 mA Gate Bias Voltage (Vgg1, 2) -3 to 0V +5V Gain Control Voltage (Vctrl) -5 to 0V Vgg1,2 (V) Igg Total (mA) RF Power Input +20 dBm 0V to -2V <0.1 mA Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 11.5 mW/°C above 85 °C) [1] 1.03 W Thermal Resistance (Channel to ground paddle) 86.7 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 0 Passed 150V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC996LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [1] Package Marking [2] H996 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC996LP4E v01.0112 VARIABLE GAIN AMPLIFIER 5 - 12 GHz Pin Descriptions Function Description 1, 2, 6, 8, 10, 11, 13, 17, 18, 20, 21, 22, 23 N/C The pins are not connected internally: however all data shown herein was measured with these pins connected to RF/DC ground externally 3, 5, 14, 16 GND These pins and exposed ground paddle must be connected to RF/DC ground. 4 RFIN This pad is AC coupled and matched to 50 Ohm. 7, 12 Vgg1, 2 Gate control for amplifier. Adjust voltage to achieve typical Idd. Please follow “MMIC Amplifier Biasing Procedure” application note. 9 Vctrl Gain control Voltage for the amplifier. See assembly diagram for required external components. 15 RFOUT This pad is AC coupled and matched to 50 Ohm. 19, 24 Vdd1, 2 Drain Bias Voltage for the amplifier. See assembly diagram for required external components Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Variable Gain Amplifier - SMT Pin Number 6 HMC996LP4E v01.0112 VARIABLE GAIN AMPLIFIER 5 - 12 GHz Variable Gain Amplifier - SMT Application Circuit 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC996LP4E v01.0112 VARIABLE GAIN AMPLIFIER 5 - 12 GHz Variable Gain Amplifier - SMT Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC996LP4E [1] Item Description J1, J4 PCB Mount SMA RF Connectors J5 - J10 DC Pin C1 - C5 100 pF Capacitor, 0402 Pkg. C6 - C10 1000 pF Capacitor, 0603 Pkg. C11 - C15 2.2 µF Capacitor, CASE A U1 HMC996LP4E Variable Gain Amplifier PCB [2] 600-00113-00 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8