UClamp3312T Datasheet

uClamp3312T
Low Voltage μClamp®
for Gigabit Ethernet
PROTECTION PRODUCTS - MicroClamp®
Description
Features
‹ High ESD withstand Voltage: +/-30kV (Contact/Air)
®
The μClamp 3312T TVS diode is specifically designed
to meet the performance requirements of Gigabit
Ethernet interfaces. They are designed to protect
sensitive PHY chips from damage or upset due to
electrostatic discharge (ESD), lightning, electrical fast
transients (EFT), and cable discharge events (CDE).
The μClamp3312T is constructed using Semtech’s low
voltage EPD process technology. The EPD process
provides low operating voltages with significant reductions in leakage current and capacitance over siliconavalanche diode processes. The device features low
variation in capacitance over bias for stable operation
on GbE lines. This means the μClamp3312T will
introduce zero traffic frame errors on GbE interfaces
up to a PHY temperature of 120oC (100M Cat 5/5e
Cable). The μClamp3312T also features high surge
capability and is designed to be placed between the
magnetics and the PHY chip. In this configuration, the
device can withstand intra-building lightning surges per
Telcordia GR-1089.
The μClamp3312T is in a 8-pin SLP2010N8T package.
It measures 2.0 x 1.0 x 0.4mm. The leads are spaced
at a pitch of 0.5mm and are finished with lead-free
NiPdAu. Each device will protect two line pairs operating at 3.3 volts. It gives the designer the flexibility to
protect multiple lines in applications where space is at
a premium. The small size and easy layout of the
uClamp3312T make it ideal for use in RJ-45 connectors with integrated magnetics.
per IEC 61000-4-2
‹ Able to withstand over 1000 ESD strikes per IEC
61000-4-2 Level 4
Flow-through design simplifies layout
Protects two line pairs
Low reverse current: 10nA typical (VR=3.3V)
Low variation in capacitance vs. bias voltage:
1.3pF Typical (VR = 0 to 3.3V)
‹ Working voltage: 3.3V
‹ Solid-state silicon-avalanche technology
‹
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Mechanical Characteristics
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SLP2010N8T package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 2.0 x 1.0 x 0.4 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking: Marking code
Packaging: Tape and Reel
Applications
‹
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Typical Application
10/100/1000 Ethernet
Integrated magnetics/RJ-45 connectors
LAN/WAN Equipment
Security Cameras
Industrial Controls
Notebooks & Desktop Computers
Schematic & PIN Configuration
TP1+
RJ-45
Connector
1
TP1TP2+
1
2
3
TP2-
4
2
TP3+
5
6
7
TP3-
8
TP4+
TP4-
GBE Integrated Magnetics Module
Revision 4/25/2010
SLP2010N8T
1
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uClamp3312T
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20μs)
Pp k
100
Watts
Maximum Peak Pulse Current (tp = 8/20μs)
Ip p
10
Amps
VESD
+/- 30
+/- 30
kV
TJ
-40 to +85
°C
TSTG
-55 to +150
°C
ESD p er IEC 61000-4-2 (Air)
ESD p er IEC 61000-4-2 (Contact)
Op erating Temp erature
Storage Temp erature
Electrical Characteristics (T=25oC)
Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Minimum
VRWM
Punch-Through Voltage
V PT
IPT = 2μA
3.5
Snap-Back Voltage
VSB
ISB = 50mA
2.8
Reverse Leakage Current
IR
VRWM = 3.3V
Clamping Voltage
VC
Clamping Voltage
VC
Variation in capacitance with
reverse bias 1
Junction Capacitance
Typical
Cj
3.8
Maximum
Units
3.3
V
4.3
V
V
0.01
0.05
μA
IPP = 1A, tp = 8/20μs
5.6
V
IPP = 10A, tp = 8/20μs
11
V
Pins 1, 8 to 2, 7 and
pins 3, 6 to 4, 5
VR = 0 to 2.5V
f = 1MHz
Pins 1, 8 to 2, 7 and
pins 3, 6 to 4, 5
VR = 2.5V, f = 1MHz
1.3
I/O pin to Gnd
VR = 0V, f = 1MHz
4.5
pF
6
pF
Notes:
1) This parameter guaranteed by design and characterization and is not production tested
© 2010 Semtech Corp.
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uClamp3312T
PROTECTION PRODUCTS
Non-Repetitive Peak Pulse Power vs. Pulse Time
Clamping Voltage vs. Peak Pulse Current
10
10
Clamping Voltage - VC (V)
Peak Pulse Power - PPP (kW)
9
1
0.1
8
7
6
5
4
3
Waveform
Parameters:
tr = 8μs
td = 20μs
2
1
0
0.01
0.1
1
10
0
100
2
4
Pulse Duration - tp (us)
6
8
10
Typical Insertion Loss (S21)
Normalized Junction Capacitance vs. Reverse Voltage
CH1 S21
LOG
6 dB / REF 0 dB
1: -2.2287 dB
800 MHz
1.6
f = 1 MHz
1.4
1.2
Cj(VR) / Cj(VR=0V)
2: -2.3884 dB
900 MHz
0 dB
12
-6 dB
1
-18 dB
0.6
-24 dB
0.4
-30 dB
0.2
-36 dB
0
-42 dB
0.5
1
1.5
2
Reverse Voltage - VR (V)
2.5
3
-48 dB
4
4: -13.643 dB
2.5 GHz
1
MHz
10
MHz
100
MHz
START . 030 MHz
3
1
GHz GHz
STOP 3000. 000000 MHz
ESD Clamping (Pin 1 to 2 and 2 to 1)
(-8kV Contact per IEC 61000-4-2)
ESD Clamping (Pin 1 to 2 and 2 to 1)
(8kV Contact per IEC 61000-4-2)
Note: Data is taken with a 10x attenuator
© 2010 Semtech Corp.
3: -5.5200 dB
1.8 GHz
3
-12 dB
0.8
0
12
Peak Pulse Current - IPP (A)
Note: Data is taken with a 10x attenuator
3
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uClamp3312T
PROTECTION PRODUCTS
Applications Information
charging and will transfer its stored energy to the IC
side where the PHY IC is located. The magnitude and
duration of the surge is attenuated by the inductance
of the magnetics. The amount of attenuation will vary
by vendor and configuration of the magnetics. It is
this transferred energy that must be clamped by the
protection circuitry.
Gigabit Ethernet Protection Solutions
Ethernet systems with connections external to the
building are subject to high-level transient threats.
This type of equipment may even be required to meet
the surge immunity requirements of Telcordia GR1089. Reliable protection of the Ethernet transceiver
requires a device that can absorb the expected
transient energy, clamp the incoming surge to a safe
level, and yet remain transparent to the system under
normal operation. The uClamp3312T has been
designed to meet these demanding requirements.
Typical IEEE 802.3 template test results for a GbE
circuit with uClamp3312T are shown in Figure 2.
A typical protection scheme which utilizes the
uClamp3312T is shown in Figure 1. One device is
placed across two line pairs and is located on the PHY
side of the transformer as close to the magnetics as
possible. This is done to minimize parasitic inductance
and improve clamping performance. In this design, the
isolation voltage of the transformer is relied upon to
suppress common mode lightning surges. High voltage
capacitors and resistors are commonly utilized from
the center tap to ground to aid in transient protection.
Metallic surges will be transferred in some form to the
PHY side and clamped by the uClamp3312T. The
uClamp3312T will turn on when the voltage across it
exceeds the punch-through voltage of the device. Low
voltage turn on is important since many PHY chips
have integrated ESD protection structures. These
structures are for protection of the device during
manufacture and are not designed to handle large
amounts of energy. Should they turn on before the
external protection, they can be damaged resulting in
failure of the PHY chip.
Transient Protection
When designing Ethernet protection, the entire system
must be considered. An Ethernet port includes
interface magnetics in the form of transformers and
common mode chokes. Transformers and chokes can
be discrete components, but integrated solutions that
include the RJ-45 connector, resistors, capacitors, and
protection are also available. In either case, the
transformer will provide a high level of common mode
isolation to external voltages, but no protection for
metallic (line-to-line) surges. During a metallic
transient event, current will flow into one line, through
the transformer and back to the source. As the
current flows, it charges the windings of the
transformer on the line side. Once the surge is
removed, the windings on the line side will stop
TP1+
RJ-45
Connector
TP1TP2+
1
2
3
TP2-
4
TP3+
5
Ethernet
PHY
6
7
TP3-
8
TP4+
TP4-
Figure 1 - GbE Protection to Lightning, ESD, and CDE
© 2010 Semtech Corp.
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uClamp3312T
PROTECTION PRODUCTS
Applications Information
Point A
Point B
Point C
Point D
Point F
Point H
Figure 2 - Typical IEEE 802.3 Template Test Results (With uClamp3312T)
© 2010 Semtech Corp.
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uClamp3312T
PROTECTION PRODUCTS
Applications Information - Spice Model
Spice Model
uClamp3312T Spice Parameters
© 2010 Semtech Corp.
Parameter
Unit
D1 (T VS)
D2 (T VS)
IS
Amp
1E-20
1E-20
BV
Volt
2.8
2.8
VJ
Volt
0.7
0.7
RS
Ohm
0.2
0.2
IB V
Amp
1E-3
1E-3
CJO
Farad
10E-12
1E-12
TT
sec
2.541E-9
2.541E-9
M
--
0.05
0.05
N
--
1.1
1.1
EG
eV
1.11
1.11
6
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uClamp3312T
PROTECTION PRODUCTS
Outline Drawing - SLP2010N8T
A
B
D
DIMENSIONS
MILLIMETERS
MIN NOM MAX
DIM
E
PIN 1
INDICATOR
(LASER MARK)
A
SEATING
PLANE
aaa C
A2
C
A1
1
0.37 0.40 0.43
0.00 0.02 0.05
(0.13)
0.20 0.25 0.30
1.90 2.00 2.10
0.90 1.00 1.10
0.50 BSC
0.30 0.35 0.40
0.05 0.10 0.15
8
0.08
0.10
2
LxN
E/2
N
R
A
A1
A2
b
D
E
e
L
R
N
aaa
bbb
bxN
bbb
e/2
C A B
e
D/2
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
Land Pattern - SLP2010N8T
(C)
G
Z
Y
P
P/2
DIM
C
G
P
X
Y
Z
DIMENSIONS
MILLIMETERS
(0.90)
0.25
0.50
0.30
0.65
1.55
X
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
© 2010 Semtech Corp.
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uClamp3312T
PROTECTION PRODUCTS
Marking Code
Ordering Information
3312T
PIN 1
INDICATOR
YYWW
Part Number
Working
Voltage
Qty per
Reel
Reel
Size
uClamp 3312T.TCT
3.3V
3,000
7 Inch
Notes:
1) MicroClamp, uClamp and μClamp are marks of Semtech
Corporation
YYWW = Date Code
Tape and Reel Specification
Pin 1 Location
User Direction of feed
Device Orientation in Tape
A0
1.21 +/-0.05 mm
B0
K0
2.21 +/-0.05 mm
0.66 +/-0.05 mm
Tape
Width
B, (Max)
D
D1
8 mm
4.2 mm
(.165)
1.5 + 0.1 mm
- 0.0 mm
(0.59 +.005
- .000)
0.4 mm
±0.25
(.031)
E
1.750±.10
mm
(.069±.004)
F
P
P0
P2
T
W
3.5±0.05
mm
(.138±.002)
4.0±0.10
mm
(.157±.004)
4.0±0.1
mm
(.157±.004)
2.0±0.05
mm
(.079±.002)
0.254±0.02
mm (.016)
8.0 mm
+ 0.3 mm
- 0.1 mm
(.312±.012)
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Rd., Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
© 2010 Semtech Corp.
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