uClamp3312T Low Voltage μClamp® for Gigabit Ethernet PROTECTION PRODUCTS - MicroClamp® Description Features High ESD withstand Voltage: +/-30kV (Contact/Air) ® The μClamp 3312T TVS diode is specifically designed to meet the performance requirements of Gigabit Ethernet interfaces. They are designed to protect sensitive PHY chips from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The μClamp3312T is constructed using Semtech’s low voltage EPD process technology. The EPD process provides low operating voltages with significant reductions in leakage current and capacitance over siliconavalanche diode processes. The device features low variation in capacitance over bias for stable operation on GbE lines. This means the μClamp3312T will introduce zero traffic frame errors on GbE interfaces up to a PHY temperature of 120oC (100M Cat 5/5e Cable). The μClamp3312T also features high surge capability and is designed to be placed between the magnetics and the PHY chip. In this configuration, the device can withstand intra-building lightning surges per Telcordia GR-1089. The μClamp3312T is in a 8-pin SLP2010N8T package. It measures 2.0 x 1.0 x 0.4mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu. Each device will protect two line pairs operating at 3.3 volts. It gives the designer the flexibility to protect multiple lines in applications where space is at a premium. The small size and easy layout of the uClamp3312T make it ideal for use in RJ-45 connectors with integrated magnetics. per IEC 61000-4-2 Able to withstand over 1000 ESD strikes per IEC 61000-4-2 Level 4 Flow-through design simplifies layout Protects two line pairs Low reverse current: 10nA typical (VR=3.3V) Low variation in capacitance vs. bias voltage: 1.3pF Typical (VR = 0 to 3.3V) Working voltage: 3.3V Solid-state silicon-avalanche technology Mechanical Characteristics SLP2010N8T package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 2.0 x 1.0 x 0.4 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking: Marking code Packaging: Tape and Reel Applications Typical Application 10/100/1000 Ethernet Integrated magnetics/RJ-45 connectors LAN/WAN Equipment Security Cameras Industrial Controls Notebooks & Desktop Computers Schematic & PIN Configuration TP1+ RJ-45 Connector 1 TP1TP2+ 1 2 3 TP2- 4 2 TP3+ 5 6 7 TP3- 8 TP4+ TP4- GBE Integrated Magnetics Module Revision 4/25/2010 SLP2010N8T 1 www.semtech.com uClamp3312T PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20μs) Pp k 100 Watts Maximum Peak Pulse Current (tp = 8/20μs) Ip p 10 Amps VESD +/- 30 +/- 30 kV TJ -40 to +85 °C TSTG -55 to +150 °C ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum VRWM Punch-Through Voltage V PT IPT = 2μA 3.5 Snap-Back Voltage VSB ISB = 50mA 2.8 Reverse Leakage Current IR VRWM = 3.3V Clamping Voltage VC Clamping Voltage VC Variation in capacitance with reverse bias 1 Junction Capacitance Typical Cj 3.8 Maximum Units 3.3 V 4.3 V V 0.01 0.05 μA IPP = 1A, tp = 8/20μs 5.6 V IPP = 10A, tp = 8/20μs 11 V Pins 1, 8 to 2, 7 and pins 3, 6 to 4, 5 VR = 0 to 2.5V f = 1MHz Pins 1, 8 to 2, 7 and pins 3, 6 to 4, 5 VR = 2.5V, f = 1MHz 1.3 I/O pin to Gnd VR = 0V, f = 1MHz 4.5 pF 6 pF Notes: 1) This parameter guaranteed by design and characterization and is not production tested © 2010 Semtech Corp. 2 www.semtech.com uClamp3312T PROTECTION PRODUCTS Non-Repetitive Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current 10 10 Clamping Voltage - VC (V) Peak Pulse Power - PPP (kW) 9 1 0.1 8 7 6 5 4 3 Waveform Parameters: tr = 8μs td = 20μs 2 1 0 0.01 0.1 1 10 0 100 2 4 Pulse Duration - tp (us) 6 8 10 Typical Insertion Loss (S21) Normalized Junction Capacitance vs. Reverse Voltage CH1 S21 LOG 6 dB / REF 0 dB 1: -2.2287 dB 800 MHz 1.6 f = 1 MHz 1.4 1.2 Cj(VR) / Cj(VR=0V) 2: -2.3884 dB 900 MHz 0 dB 12 -6 dB 1 -18 dB 0.6 -24 dB 0.4 -30 dB 0.2 -36 dB 0 -42 dB 0.5 1 1.5 2 Reverse Voltage - VR (V) 2.5 3 -48 dB 4 4: -13.643 dB 2.5 GHz 1 MHz 10 MHz 100 MHz START . 030 MHz 3 1 GHz GHz STOP 3000. 000000 MHz ESD Clamping (Pin 1 to 2 and 2 to 1) (-8kV Contact per IEC 61000-4-2) ESD Clamping (Pin 1 to 2 and 2 to 1) (8kV Contact per IEC 61000-4-2) Note: Data is taken with a 10x attenuator © 2010 Semtech Corp. 3: -5.5200 dB 1.8 GHz 3 -12 dB 0.8 0 12 Peak Pulse Current - IPP (A) Note: Data is taken with a 10x attenuator 3 www.semtech.com uClamp3312T PROTECTION PRODUCTS Applications Information charging and will transfer its stored energy to the IC side where the PHY IC is located. The magnitude and duration of the surge is attenuated by the inductance of the magnetics. The amount of attenuation will vary by vendor and configuration of the magnetics. It is this transferred energy that must be clamped by the protection circuitry. Gigabit Ethernet Protection Solutions Ethernet systems with connections external to the building are subject to high-level transient threats. This type of equipment may even be required to meet the surge immunity requirements of Telcordia GR1089. Reliable protection of the Ethernet transceiver requires a device that can absorb the expected transient energy, clamp the incoming surge to a safe level, and yet remain transparent to the system under normal operation. The uClamp3312T has been designed to meet these demanding requirements. Typical IEEE 802.3 template test results for a GbE circuit with uClamp3312T are shown in Figure 2. A typical protection scheme which utilizes the uClamp3312T is shown in Figure 1. One device is placed across two line pairs and is located on the PHY side of the transformer as close to the magnetics as possible. This is done to minimize parasitic inductance and improve clamping performance. In this design, the isolation voltage of the transformer is relied upon to suppress common mode lightning surges. High voltage capacitors and resistors are commonly utilized from the center tap to ground to aid in transient protection. Metallic surges will be transferred in some form to the PHY side and clamped by the uClamp3312T. The uClamp3312T will turn on when the voltage across it exceeds the punch-through voltage of the device. Low voltage turn on is important since many PHY chips have integrated ESD protection structures. These structures are for protection of the device during manufacture and are not designed to handle large amounts of energy. Should they turn on before the external protection, they can be damaged resulting in failure of the PHY chip. Transient Protection When designing Ethernet protection, the entire system must be considered. An Ethernet port includes interface magnetics in the form of transformers and common mode chokes. Transformers and chokes can be discrete components, but integrated solutions that include the RJ-45 connector, resistors, capacitors, and protection are also available. In either case, the transformer will provide a high level of common mode isolation to external voltages, but no protection for metallic (line-to-line) surges. During a metallic transient event, current will flow into one line, through the transformer and back to the source. As the current flows, it charges the windings of the transformer on the line side. Once the surge is removed, the windings on the line side will stop TP1+ RJ-45 Connector TP1TP2+ 1 2 3 TP2- 4 TP3+ 5 Ethernet PHY 6 7 TP3- 8 TP4+ TP4- Figure 1 - GbE Protection to Lightning, ESD, and CDE © 2010 Semtech Corp. 4 www.semtech.com uClamp3312T PROTECTION PRODUCTS Applications Information Point A Point B Point C Point D Point F Point H Figure 2 - Typical IEEE 802.3 Template Test Results (With uClamp3312T) © 2010 Semtech Corp. 5 www.semtech.com uClamp3312T PROTECTION PRODUCTS Applications Information - Spice Model Spice Model uClamp3312T Spice Parameters © 2010 Semtech Corp. Parameter Unit D1 (T VS) D2 (T VS) IS Amp 1E-20 1E-20 BV Volt 2.8 2.8 VJ Volt 0.7 0.7 RS Ohm 0.2 0.2 IB V Amp 1E-3 1E-3 CJO Farad 10E-12 1E-12 TT sec 2.541E-9 2.541E-9 M -- 0.05 0.05 N -- 1.1 1.1 EG eV 1.11 1.11 6 www.semtech.com uClamp3312T PROTECTION PRODUCTS Outline Drawing - SLP2010N8T A B D DIMENSIONS MILLIMETERS MIN NOM MAX DIM E PIN 1 INDICATOR (LASER MARK) A SEATING PLANE aaa C A2 C A1 1 0.37 0.40 0.43 0.00 0.02 0.05 (0.13) 0.20 0.25 0.30 1.90 2.00 2.10 0.90 1.00 1.10 0.50 BSC 0.30 0.35 0.40 0.05 0.10 0.15 8 0.08 0.10 2 LxN E/2 N R A A1 A2 b D E e L R N aaa bbb bxN bbb e/2 C A B e D/2 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLP2010N8T (C) G Z Y P P/2 DIM C G P X Y Z DIMENSIONS MILLIMETERS (0.90) 0.25 0.50 0.30 0.65 1.55 X NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. © 2010 Semtech Corp. 7 www.semtech.com uClamp3312T PROTECTION PRODUCTS Marking Code Ordering Information 3312T PIN 1 INDICATOR YYWW Part Number Working Voltage Qty per Reel Reel Size uClamp 3312T.TCT 3.3V 3,000 7 Inch Notes: 1) MicroClamp, uClamp and μClamp are marks of Semtech Corporation YYWW = Date Code Tape and Reel Specification Pin 1 Location User Direction of feed Device Orientation in Tape A0 1.21 +/-0.05 mm B0 K0 2.21 +/-0.05 mm 0.66 +/-0.05 mm Tape Width B, (Max) D D1 8 mm 4.2 mm (.165) 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) 0.4 mm ±0.25 (.031) E 1.750±.10 mm (.069±.004) F P P0 P2 T W 3.5±0.05 mm (.138±.002) 4.0±0.10 mm (.157±.004) 4.0±0.1 mm (.157±.004) 2.0±0.05 mm (.079±.002) 0.254±0.02 mm (.016) 8.0 mm + 0.3 mm - 0.1 mm (.312±.012) Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2010 Semtech Corp. 8 www.semtech.com