NTLGF3402P D

NTLGF3402P
Power MOSFET and
Schottky Diode
−20 V, −3.9 A FETKY), P−Channel,
2.0 A Schottky Barrier Diode, DFN6
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Features
•
•
•
•
•
MOSFET
Flat Lead 6 Terminal Package 3x3x1 mm
Enhanced Thermal Characteristics
Low VF and Low Leakage Schottky Diode
Reduced Gate Charge to Improve Switching Response
This is a Pb−Free Device
V(BR)DSS
RDS(on) TYP
ID MAX
−20 V
110 mW @ −4.5 V
−3.9 A
SCHOTTKY DIODE
Applications
VR MAX
VF TYP
IF MAX
20 V
0.36 V
2.0 A
• Buck Converter
• High Side DC−DC Conversion Circuits
• Power Management in Portable, HDD and Computing
5
2
1
2
3
6
5
4
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
ID
−2.7
A
Parameter
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
−2.0
t ≤ 10 s
TA = 25°C
−3.9
Steady
State
PD
Power Dissipation
(Note 2)
Pulsed Drain Current
Heatsink
1
6
1, 6
2, 5
3
4
ID
TA = 85°C
TA = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
= Anode
= Source
= Gate
= Drain/Cathode
W
1.6
MARKING
DIAGRAMS
3.0
TA = 25°C
Steady
State
4
TA = 25°C
t ≤ 10 s
Continuous Drain
Current (Note 2)
3
A
−2.3
DFN6
CASE 506AH
−1.7
PD
1.14
W
IDM
11
A
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
1.1
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
1
3402
A
Y
WW
G
1
3402
AYWW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.5 in sq).
Device
Package
Shipping†
NTLGF3402PT1G
DFN6
(Pb−Free)
3000 / Tape & Reel
NTLGF3402PT2G
DFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1
Publication Order Number:
NTLGF3402P/D
NTLGF3402P
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Reverse Voltage
Symbol
Max
Unit
VRRM
20
V
DC Blocking Voltage
VR
20
V
Average Rectified Forward Current
IF
2.0
A
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 2)
RqJA
110
°C/W
Junction−to−Ambient – t ≤ 10 s (Note 2)
RqJA
58
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
79
°C/W
Junction−to−Ambient – t ≤ 10 s (Note 3)
RqJA
41
°C/W
THERMAL RESISTANCE RATINGS
Parameter
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
−9.0
VDS = −16 V, VGS = 0 V
TJ = 25°C
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
Gate Threshold
Temperature Coefficient
VGS(TH)/TJ
mV/°C
−1.0
TJ = 125°C
IGSS
Gate−to−Source Leakage Current
V
mA
−5.0
±100
nA
−2.0
V
ON CHARACTERISTICS (Note 4)
Drain−to−Source On−Resistance
RDS(on)
Forward Transconductance
gFS
−0.6
2.7
mV/°C
VGS = −4.5, ID = −2.7 A
110
140
VGS = −2.5, ID = −1.0 A
190
225
VDS = −10 V, ID = −2.7 A
4.8
mW
S
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
230
350
105
225
pF
CRSS
40
75
Total Gate Charge
QG(TOT)
3.8
10
nC
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.6
td(ON)
6.2
15
ns
22
30
25
45
34
60
VGS = −4.5 V, VDS = −10 V,
ID = −2.7 A
0.32
0.7
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −4.5 V, VDD = −16 V,
ID = −2.7 A, RG = 2.4 W
tf
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTLGF3402P
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−0.8
−1.2
V
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = −1.1 A
TJ = 25°C
ns
53
15
VGS = 0 V, IS = −1.1 A ,
dIS/dt = 100 A/ms
38
QRR
37
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Maximum Instantaneous
Forward Voltage
VF
Maximum Instantaneous
Reverse Current
IR
Min
Typ
Max
Unit
IF = 0.1 A
0.32
0.34
V
IF = 1.0 A
0.36
0.39
VR = 5 V, TJ = 100°C
VR = 10 V
70
VR = 20 V
225
6. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
12
mA
mA
NTLGF3402P
TYPICAL P−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
5
6
−2.6 V
TJ = 25°C
VGS = −3 V to −10 V
4
−2.4 V
3
−2.2 V
2
−2 V
1
−1.8 V
−1.6 V
0
0.4
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
−2.8 V
0.8
1.2
1.6
2
4
3
25°C
1
TJ = −55°C
1
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.5
2
2.5
3
3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = −2.7 A
TJ = 25°C
0.2
0.1
0
2
6
7
8
9
4
3
5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
4
0.25
TJ = 25°C
0.2
VGS = −2.5 V
0.15
0.1
VGS = −4.5 V
0.05
1.5
2.5
3.5
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10000
1.5
VGS = 0 V
ID = −2.7 A
VGS = −4.5 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
100°C
2
2.8
2.4
VDS ≥ −10 V
5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
6
TJ = 150°C
1000
1
0.5
−50
100
TJ = 100°C
10
−25
0
25
50
75
100
125
150
5
10
15
−TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
20
NTLGF3402P
TYPICAL P−CHANNEL PERFORMANCE CURVES
VGS = 0 V
VDS = 0 V
−VGS, GATE−TO−SOURCE VOLTAGE (V)
700
TJ = 25°C
600
C, CAPACITANCE (pF)
CISS
500
400
300
200
CRSS
COSS
100
0
10
5
−VGS
0
−VDS
5
10
12
−VDS
4
6
QGD
4
2
ID = −2.7 A
TJ = 25°C
2
0
0
1
2
3
4
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
10
−IS, SOURCE CURRENT (AMPS)
tf
td(off)
tr
t, TIME (ns)
8
−VGS
QGS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
td(on)
VDS = −16 V
ID = −2.7 A
VGS = −4.5 V
1
1
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
10
QT
0
20
15
6
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
(TJ = 25°C unless otherwise noted)
10
100
VGS = 0 V
TJ = 100°C
TJ = 25°C
1
TJ = 150°C
TJ = −55°C
0.1
0.4
0.5
0.6
0.7
0.8
1.0
0.9
RG, GATE RESISTANCE (OHMS)
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
t, TIME (s)
Figure 11. FET Thermal Response
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5
1
10
100
1000
NTLGF3402P
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
TJ = 100°C
TJ = 125°C
1
TJ = 25°C
TJ = −40°C
0.1
0.10
0.30
1
TJ = 25°C
0.1
0.10
0.50
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IR, MAXIMUM REVERSE CURRENT (AMPS)
IR, REVERSE CURRENT (AMPS)
TJ = 125°C
10E−3
TJ = 100°C
1E−3
1E+0
100E−3
TJ = 125°C
10E−3
TJ = 100°C
1E−3
100E−6
100E−6
TJ = 25°C
10E−6
TJ = 25°C
10E+0
20
10
VR, REVERSE VOLTAGE (VOLTS)
0
0
PFO, AVERAGE POWER DISSIPATION (WATTS)
3.5
freq = 20 kHz
2.5
2
1.5
dc
square wave
Ipk/Io = p
Ipk/Io = 5
1
Ipk/Io = 10
0.5
Ipk/Io = 20
0
25
45
65
85
105
10
VR, REVERSE VOLTAGE (VOLTS)
20
Figure 15. Maximum Reverse Current
Figure 14. Typical Reverse Current
3
0.50
Figure 13. Maximum Forward Voltage
1E+0
IO, AVERAGE FORWARD CURRENT (AMPS)
0.30
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 12. Typical Forward Voltage
100E−3
TJ = 100°C
TJ = 125°C
125
145
TL, LEAD TEMPERATURE (°C)
1.8
1.6
square wave
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
1.4
1.2
dc
1 Ipk/Io = 20
0.8
0.6
0.4
0.2
0
0
Figure 16. Current Derating
0.5
1
1.5
2
2.5
3
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 17. Forward Power Dissipation
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6
3.5
Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
NTLGF3402P
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
t, TIME (s)
1
Figure 18. Thermal Response Junction−to−Ambient
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7
10
100
1000
NTLGF3402P
PACKAGE DIMENSIONS
DFN6 3*3 MM, 0.95 PITCH
CASE 506AH−01
ISSUE O
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMESNION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30
MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
D
B
PIN 1
REFERENCE
2X
0.15 C
2X
0.15 C
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
E
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
TOP VIEW
0.10 C
A
6X
0.08 C
SEATING
PLANE
(A3)
SIDE VIEW
C
A1
SOLDERING FOOTPRINT*
0.450
0.0177
D2
6X
L
e
1
MILLIMETERS
MIN
NOM MAX
0.80
0.90
1.00
0.00
0.03
0.05
0.20 REF
0.35
0.40
0.45
3.00 BSC
2.40
2.50
2.60
3.00 BSC
1.50
1.60
1.70
0.95 BSC
0.21
−−−
−−−
0.30
0.40
0.50
4X
0.950
0.0374
3
E2
6X
K
1.700
0.685
3.31
0.130
6
4
6X
b
(NOTE 3)
0.10 C A B
BOTTOM VIEW
0.05 C
0.63
0.025
2.60
0.1023
SCALE 10:1
mm Ǔ
ǒinches
FETKY is a registered trademark of International Rectifier Corporation.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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NTLGF3402P/D