MBRS3201P 200V, 3A Schottky Fast Soft-Recovery Power Rectifier SMC Power Surface Mount Package www.onsemi.com Features • Lower Forward Voltage than any Ultrafast Rectifier: • • • • VF < 0.59 V at 150°C Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns Soft Recovery Characteristics: Softness Factor (tb/ta) ≥ 1 Highly Stable Over Temperature These are Pb−Free Packages SCHOTTKY RECTIFIER 3 AMPS, 200 VOLTS Benefits • • • • SMC CASE 403AC Significantly Reduced EMI Eliminates the Need of Snubber Circuits Low Switching and Heat Losses Improved Thermal Management Applications MARKING DIAGRAM • Engine and Convenience Control Systems • Motor Controls • Battery Chargers and Switching Power Supplies AYWW B3xG G Mechanical Characteristics • • • • • • • Small Compact Surface Mount Package with J-Bend Leads Rectangular Package for Automated Handling Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: ♦ Machine Model = A ♦ Human Body Model = 1C Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds Cathode Polarity Band © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 0 1 B321 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBRS3201PT3G SMC (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBRS3201P/D MBRS3201P MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 200 V Average Rectified Forward Current (Rated VR, TC = 70°C) IF(AV) 3 A Nonrepetitive Peak Surge Current IFSM 100 A TJ −55 to +150 °C Operating Junction Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead RqJL 12 °C/W Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF = 3 A, TJ = 25°C) (IF = 3 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Rated VR) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) IR Maximum Reverse Recovery Time (IF = 1 A, di/dt = 100 A/us, VR = 30 V) trr 1.0 5.0 ns 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) mA mA 35 100 10 25°C 150°C 1.0 100°C 0.1 0.2 V 0.84 0.59 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 25°C 100°C 0.1 0.2 1.2 150°C 1.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 1.1 1.2 MBRS3201P IR, MAXIMUM REVERSE CURRENT (A) 1.0E−01 1E−1 IR, REVERSE CURRENT (A) 1E−2 1.0E−02 1E−3 150°C 1E−4 TC = 150°C 1.0E−03 1E−5 100°C TC = 25°C 1.0E−04 1E−6 1E−7 1.0E−05 25°C 1E−8 1E−9 0 20 40 60 80 1.0E−06 0 100 120 140 160 180 200 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current C, CAPACITANCE (pF) 1000 100 10 1.0 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) 4.0 IF, AVERAGE FORWARD CURRENT (A) PFO, AVERAGE POWER DISSIPATION (W) Figure 5. Typical Capacitance 3.5 3.0 2.5 SQUARE 2.0 DC 1.5 1.0 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 7 6 DC 5 4 SQUAREWAVE 3 2 1 0 80 90 100 110 120 130 140 IO, AVERAGE FORWARD CURRENT TL, LEAD TEMPERATURE (°C) Figure 6. Power Dissipation Figure 7. Derating Curve www.onsemi.com 3 150 160 MBRS3201P PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. 4. DIMENSIONS D AND E1 TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DE TERMINED BY DIMENSION L. E E1 D A1 DIM A A1 b c D E E1 L c DETAIL A TOP VIEW DETAIL A MILLIMETERS MIN MAX 1.95 2.65 0.05 0.20 2.90 3.20 0.15 0.41 5.55 6.25 7.75 8.15 6.60 7.15 0.75 1.60 A b L SIDE VIEW END VIEW RECOMMENDED SOLDERING FOOTPRINT* 8.75 2X 3.79 2X 2.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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