MBRS4201P 200V, 4A Schottky Fast Soft-Recovery Power Rectifier SMC Power Surface Mount Package www.onsemi.com Features • Lower Forward Voltage than any Ultrafast Rectifier: • • • • VF < 0.61 V at 150°C Fast Switching Speed: Reverse Recovery Time (tRR) < 35 ns Soft Recovery Characteristics: Softness Factor (tb/ta) ≥ 1 Highly Stable Over Temperature These are Pb-Free Packages SCHOTTKY RECTIFIER 4 AMPS, 200 VOLTS Benefits • • • • SMC CASE 403AC Significantly Reduced EMI Eliminates the Need of Snubber Circuits Low Switching and Heat Losses Improved Thermal Management Applications • Engine and Convenience Control Systems • Motor Controls • Battery Chargers and Switching Power Supplies MARKING DIAGRAM AYWW B421G G Mechanical Characteristics • • • • • • • Small Compact Surface Mount Package with J–Bend Leads Rectangular Package for Automated Handling Weight: 217 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds ESD Ratings: ♦ Machine Model = A ♦ Human Body Model = 1C Cathode Polarity Band B421 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBRS4201PT3G Package Shipping† SMC (Pb−Free) 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 0 1 Publication Order Number: MBRS4201P/D MBRS4201P MAXIMUM RATINGS Symbol Value Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Characteristic VRRM VRWM VR 200 Average Rectified Forward Current (Rated VR, TL = 70°C) IF(AV) Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Unit V A 4 Operating Junction Temperature A 100 TJ −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead Symbol Value Unit RqJL 11 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF = 4 A, TJ = 25°C) (IF = 4 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Rated VR) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) IR V 0.86 0.62 Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 100 A/ms, VR = 30 V) trr www.onsemi.com 2 1.0 5.0 mA mA 35 ns MBRS4201P 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 10 150°C 25°C 100°C 1 0.1 150°C 25°C 1 100°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.2 1.1 1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.2 IR, MAXIMUM REVERSE CURRENT (A) 1.0E−01 1E−1 1E−2 1.0E−02 150°C 1E−3 1E−4 TC = 150°C 1.0E−03 100°C 1E−5 TC = 25°C 1.0E−04 1E−6 1E−7 1.0E−05 25°C 1E−8 1E−9 0 20 40 60 80 1.0E−06 0 100 120 140 160 180200 20 40 60 80 VR, REVERSE VOLTAGE (V) 100 10 0 20 40 120 140 160 180 200 Figure 4. Maximum Reverse Current 1000 1 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current C, CAPACITANCE (pF) IR, REVERSE CURRENT (A) 10 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance www.onsemi.com 3 6 5 DC 4 SQUAREWAVE 3 2 1 0 0 20 40 60 80 100 120 140 160 PFO, AVERAGE POWER DISSIPATION (W) 7 5.0 4.5 4.0 3.5 3.0 2.5 SQUAREWAVE 2.0 DC 1.5 1.0 0.5 0 0 1 2 3 4 5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT Figure 6. Derating Curve Figure 7. Power Dissipation 6 2.5 2.0 1.5 I, CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) MBRS4201P 1.0 200 V Ultrafast MBRS4201 ON Semiconductor MBRS4201 eliminates reverse recovery oscillations present in Ultrafast devices in the market, particularly at hot temperatures. 0.5 *Test Conditions: IF = 1 A, dI/dT = 100 A/ms, VR = 30 V 0 −0.5 −1.0 −1.5 −2.0 −2.5 T, TIME (10 ns/div) Figure 8. Reverse Recovery Time* (tRR) at 1255C www.onsemi.com 4 MBRS4201P PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. 4. DIMENSIONS D AND E1 TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DE TERMINED BY DIMENSION L. E E1 D A1 DIM A A1 b c D E E1 L c DETAIL A TOP VIEW DETAIL A MILLIMETERS MIN MAX 1.95 2.65 0.05 0.20 2.90 3.20 0.15 0.41 5.55 6.25 7.75 8.15 6.60 7.15 0.75 1.60 A b L SIDE VIEW END VIEW RECOMMENDED SOLDERING FOOTPRINT* 8.75 2X 3.79 2X 2.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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