TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC615LP4 / 615LP4E v03.0412 Features The HMC615LP4E is ideal for: High Input IP3: +35 dBm • PCS / 3G Infrastructure Low Input LO Drive: -2 to +6 dBm • Base Stations & Repeaters Low Conversion Loss: 10 dB • WiMAX & WiBro Single Positive Supply: +5V @ 65 mA • ISM & Fixed Wireless 24 Lead 4x4mm QFN Package: 9 mm² Functional Diagram General Description TE Typical Applications LE The HMC615LP4(E) are high linearity, GaAs FET converter ICs that operate from 2.3 to 4.0 GHz and deliver a +35 dBm input third order intercept point. The LO amplifier output and high dynamic range mixer input are positioned so that an external LO filter can be placed in series between them. The IC operates from a single +5V supply consuming 65 mA of current and accepts a LO drive level of -2 to +6 dBm. The design requires no external baluns and supports IF frequencies between DC and 1 GHz. The HMC615LP4(E) is pin for pin compatible with the HMC551LP4(E), HMC552LP4(E) and HMC215LP4(E), which operate from 0.8 to 4.0 GHz. For availability on Non-RoHS HMC615LP4 products please contact Hittite Microwave sales directly. B SO Mixers - High IP3 - SMT GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.3 - 4.0 GHz O Electrical Specifications, TA = +25° C, LO = 4 dBm, Vcc = +5V, R1 = 18 Ohms, IF = 200 MHz* Parameter Min. Typ. Frequency Range, RF, LO 2.3 - 4.0 Frequency Range, IF DC - 1.0 Conversion Loss * 10 Noise Figure (SSB) 10 Max. Units GHz GHz 13 dB dB LO to RF Isolation 5 15 dB LO to IF Isolation * 1 10 dB IP3 (Input) 35 dBm 1 dB Compression (Input) 21 dBm LO Drive Input Level (Typical) Supply Current (Icc) -2 to +6 65 dBm 75 mA *Unless otherwise noted, all measurements performed as a downconverter configured as shown in application circuit. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC615LP4 / 615LP4E v03.0412 v02.1210 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.3 - 4.0 GHz Conversion Gain vs. Temperature @ LO = 4 dBm Isolation @ LO = 4 dBm -5 +25C +85C -40C -5 -15 RF to IF LO to RF LO to IF -20 TE -10 -10 -15 -25 2 2.5 3 3.5 4 -30 1.5 4.5 Conversion Gain vs. LO Drive -15 -20 1.5 LO= -4 dBm LO= -2 dBm LO= 0 dBm LO= 2 dBm LO= 4 dBm LO= 6 dBm 4 4.5 4 4.5 -5 2 2.5 3 3.5 4 -10 -15 -20 LO RF -25 -30 1.5 4.5 O Upconverter Performance (IF= 100 MHz) Conversion Gain vs. LO Drive 2 2.5 3 3.5 FREQUENCY (GHz) IF Bandwidth @ LO = 4 dBm 0 0 LO= -4 dBm LO= -2 dBm LO= 0 dBm LO= 2 dBm LO= 4 dBm LO= 6 dBm -5 Conversion Gain Return Loss -5 RESPONSE (dB) CONVERSION GAIN (dB) 3.5 Return Loss @ LO = 4 dBm FREQUENCY (GHz) -10 -15 -20 1.5 3 0 -5 -10 2.5 FREQUENCY (GHz) B SO CONVERSION GAIN (dB) 0 2 LE FREQUENCY (GHz) RETURN LOSS (dB) -20 1.5 Mixers - High IP3 - SMT 0 ISOLATION (dB) CONVERSION GAIN (dB) 0 -10 -15 -20 -25 2 2.5 3 3.5 FREQUENCY (GHz) 4 4.5 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC615LP4 / 615LP4E v03.0412 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.3 - 4.0 GHz 40 40 30 30 IP3 (dBm) 50 0 1.8 2.2 2.6 3 3.4 3.8 0 1.8 4.2 3.8 4.2 3.8 4.2 B SO 40 + 25C + 85C - 40C 2.2 2.6 3 3.4 3.8 30 20 LO= -2 dBm LO= 0 dBm LO= 2 dBm LO= 4 dBm LO= 6 dBm 10 0 1.8 4.2 O Input P1dB vs. Temperature @ LO = 4 dBm 2.2 2.6 20 +25C +85C -40C 2.1 2.5 2.9 3.4 MxN Spurious @ IF Port nLO 25 15 3 FREQUENCY (GHz) 30 P1dB (dBm) 3.4 Input IP2 vs. LO Drive FREQUENCY (GHz) 10 1.7 3 50 40 0 1.8 2.6 LE 50 10 2.2 FREQUENCY (GHz) Input IP2 vs. Temperature @ LO = 4 dBm 20 LO= -2 dBm LO= 0 dBm LO= 2 dBm LO= 4 dBm LO= 6 dBm 10 FREQUENCY (GHz) 30 20 TE + 25C + 85C - 40C 20 IP2 (dBm) IP3 (dBm) Input IP3 vs. LO Drive 50 10 IP2 (dBm) Mixers - High IP3 - SMT Input IP3 vs. Temperature @ LO = 4 dBm 3.3 mRF 0 1 2 3 4 0 xx -11 -1 6 10 1 5 0 16 37 36 2 58 67 55 51 60 3 98 102 103 82 91 4 99 99 104 106 107 RF Freq. = 3 GHz @ -10 dBm LO Freq. = 2.8 GHz @ 0 dBm All values in dBc relative to the IF power level. 3.7 4.1 FREQUENCY (GHz) 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC615LP4 / 615LP4E v03.0412 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.3 - 4.0 GHz Absolute Maximum Ratings LO Drive (Vcc= +5V) +10 dBm BIAS +7 Vdc Junction Temperature 150°C Continuous Pdiss (T = 85°C) (derate 5.21 mW/°C above 85°C) 0.339 W Thermal Resistance (junction to ground paddle) 192 °C/W Storage Temperature -65 to +150°C Operating Temperature -40 to +85°C Harmonics of LO nLO Spur @ RF Port 1 2 3 4 1 8 13 29 31 1.8 5 23 18 34 2.6 11 12 27 30 3.4 15 16 48 27 4.2 7 18 27 27 5 16 27 38 43 LO = 0 dBm All values in dBc below input LO level measured at RF port. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Typical Supply Current Vcc Icc (mA) +5.0 65 mA B SO LE Outline Drawing LO Freq. (GHz) Mixers - High IP3 - SMT +27 dBm TE RF / IF Input (Vcc= +5V) NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY O 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC615LP4 Low Stress Injection Molded Plastic[4] Sn/Pb Solder MSL1 [1] HMC615LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H615 XXXX H615 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX [4] For availability of Non-RoHS HMC615LP4 products please contact Hittite Microwave sales directly. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC615LP4 / 615LP4E v03.0412 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.3 - 4.0 GHz Function Description Interface Schematic 1 MIX LO This pin is DC coupled and matched to 50 Ohms. An off chip DC blocking capacitor is required. 2, 6 - 9, 11 - 17, 19 - 24 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 3 BIAS Power supply for the LO amplifier , a Bias resistor is required. Three external bypass capacitors are recommended for optimum performance, as illustrated in the application circuit. 4 GND Backside of package has exposed metal ground paddle that must also be connected to ground. 5 LO This pin is DC coupled and matched to 50 Ohms. An off chip DC blocking capacitor is required. 10 IF This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/ sink more than 18 mA of current or die non-function and possible die failure will result. 18 RF This pin is DC coupled and matched to 50 Ohms. LE TE Pin Number O B SO Mixers - High IP3 - SMT Pin Descriptions 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC615LP4 / 615LP4E v03.0412 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.3 - 4.0 GHz LE Evaluation PCB B SO Recommended Components Values (IF = DC - 300 MHz) C3 1000 pF C4 2.2 µF C1, C2, C5 100 pF L1 18 nH R1 18 Ohm Mixers - High IP3 - SMT TE Application Circuit Note : O Select R1 to achieve Icc by using equation below, R1 ≥ 18 Ohms. Icc = ( Vs - 3.8 ) / R1 List of Materials for Evaluation PCB 115906 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4, J5 DC Pin C1, C2, C5 100 pF Chip Capacitor, 0402 Pkg. C3 1000 pF Chip Capacitor, 0603 Pkg. C4 2.2 µF Capacitor, Tantalum L1 18 nH Chip Inductor, 0603 Pkg. R1 18 Ohm Resistor, 1210 1/8 watt Pkg. U1 HMC615LP4E PCB [2] 113417 Evaluation Board The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6