SDT12S60 Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Product Summary Revolutionary semiconductor V 600 VRRM material - Silicon Carbide Switching behavior benchmark Qc 30 nC No reverse recovery IF 12 A P-TO220-2-2. No temperature influence on the switching behavior No forward recovery Type Package Ordering Code Marking Pin 1 Pin 2 SDT12S60 P-TO220-2-2. Q67040-S4470 D12S60 C A Pin 3 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C IF 12 RMS forward current, f=50Hz I FRMS 17 Surge non repetitive forward current, sine halfwave I FSM Value Unit A 36 TC=25°C, tp =10ms I FRM 49 I FMAX 120 i 2 t value, TC=25°C, tp =10ms i2dt 6.48 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 88.2 W Operating and storage temperature T j , Tstg -55... +175 °C Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp =10µs, TC=25°C Page 1 2002-01-14 SDT12S60 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 K/W Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=12A, T j=25°C - 1.5 1.7 IF=12A, T j=150°C - 1.7 2.1 Reverse current µA IR V R=600V, Tj=25°C - 40 400 V R=600V, Tj=150°C - 100 2000 Electrical Characteristics,at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. Qc - 30 - nC trr - n.a. - ns AC Characteristics Total capacitive charge VR =400V, IF =12A, diF /dt=200A/µs, Tj=150°C Switching time VR =400V, IF =12A, diF /dt=200A/µs, Tj=150°C Total capacitance C pF VR =1V, TC =25°C, f=1MHz - 450 - VR =300V, TC =25°C, f=1MHz - 45 - VR =600V, TC =25°C, f=1MHz - 43 - Page 2 2002-01-14 SDT12S60 Preliminary data 1 Power dissipation 2 Diode forward current Ptot = f (TC ) IF = f (TC ) parameter: Tj 175 °C 90 24 A W 20 18 60 16 IF P tot 70 50 14 12 40 10 30 8 6 20 4 10 2 0 0 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF ) average forward current parameter: Tj , tp = 350 µs PF(AV)=f(IF ) TC =100°C, d = tp/T 24 180 44 W A P F(AV) IF 16 150°C 125°C 100°C 25°C -40°C d=0.1 d=0.2 36 d=0.5 d=1 32 28 24 12 20 16 8 12 8 4 4 0 0 0.5 1 1.5 2.5 V VF Page 3 0 0 2 4 6 8 10 12 16 A IF(AV) 2002-01-14 SDT12S60 Preliminary data 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance IR =f(VR) ZthJC = f (tp ) parameter : D = tp /T 10 2 10 1 µA SDT12S60 K/W 150°C 10 1 125°C 10 0 Z thJC IR 100°C 25°C 10 0 10 -1 D = 0.50 10 -1 10 -2 0.20 0.10 0.05 10 -2 10 10 -3 100 150 200 250 300 350 400 450 500 V VR -3 10 -4 -7 10 600 0.02 single pulse 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(VR ) EC=f(VR ) parameter: TC = 25 °C, f = 1 MHz 9 600 pF µJ 500 7 450 EC C 400 350 6 5 300 4 250 3 200 150 2 100 1 50 0 0 10 10 1 10 2 V VR 10 3 0 0 100 200 300 400 600 V VR Page 4 2002-01-14 Preliminary data SDT12S60 9 Typ. capacitive charge vs. current slope Qc =f(diF /dt) parameter: Tj = 150 °C 40 nC IF *2 IF 32 Qc 28 IF *0.5 24 20 16 12 8 4 0 100 200 300 400 500 600 700 800 A/µs 1000 di F/dt Page 5 2002-01-14 SDT12S60 Preliminary data TO-220-2-2 N A P dimensions [mm] symbol E D U H B V F W X J L G max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L 1.05 typ. M 2.54 typ. 0.1 typ. N 4.4 typ. 0.173 typ. P T C M 1.10 1.40 0.41 typ. 0.0433 0.0551 2.4 typ. 0.095 typ. 0.26 typ. U 6.6 typ. V 13.0 typ. 0.51 typ. W 7.5 typ. 0.295 typ. X T [inch] min 0.00 0.40 0.0000 0.0157 K Page 6 2002-01-14 Preliminary data SDT12S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 7 2002-01-14 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.