Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC404 v03.0907 3 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz Typical Applications Features The HMC404 is ideal for: Integrated LO Amplifier: +2 dBm Input • 26 to 33 GHz Microwave Radios Sub-Harmonically Pumped (x2) LO • Up and Down Converter for Point-to-Point Radios Image Rejection: 22 dB Small Size: 1.90 x 1.25mm MIXERS - I/Q MIXERS / IRM - CHIP • Satellite Communication Systems Functional Diagram General Description The HMC404 chip is a sub-harmonically pumped (x2) MMIC image rejection mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 2.31mm2. The on-chip 90° hybrid provides excellent amplitude and phase balance resulting in greater than 22 dB of image rejection. The LO amplifier is a single bias (+4V) two stage design with only +2 dBm nominal drive required. Electrical Specifi cations, TA = +25° C IF = 1 GHz LO = +2 dBm & Vdd = +4V Parameter Min. Typ. Units Max. Frequency Range, RF 26 - 33 GHz Frequency Range, LO 13 - 16.5 GHz Frequency Range, IF DC - 3 Conversion Loss (As IRM) Image Rejection 11 15 Noise Figure GHz 15 dB 15 dB 22 11 dB 1 dB Compression (Input) +2 +6 dBm 2LO to RF Isolation 20 35 dB 2LO to IF Isolation 20 35 dB IP3 (Input) 8 16 dBm ±1.5 dB Amplitude Balance Phase Balance ±7 Supply Current (Idd) 28 Deg 38 * Unless otherwise noted, all measurements performed as downconverter. 3 - 58 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC404 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz Data Taken As IRM With 1 GHz IF Hybrid Image Rejection vs. Temperature @ LO= +2 dBm, Vdd= +4V 0 30 -5 25 -10 -15 +25C -55C +85C -20 -25 3 20 15 +25C -55C +85C 10 5 -30 0 24 26 28 30 32 34 36 24 26 28 RF FREQUENCY (GHz) Conversion Gain vs. LO Drive @ Vdd= +4V 32 34 36 Input P1dB vs. Temperature @ LO= +2 dBm, Vdd= +4V 0 10 -5 8 -10 P1dB (dBm) CONVERSION GAIN (dB) 30 RF FREQUENCY (GHz) -15 0 dBm +2 dBm +4 dBm -20 6 +25C -55C +85C 4 2 -25 0 -30 24 26 28 30 32 34 36 26 27 28 29 30 31 32 33 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Upconverter Performance Conversion Gain vs. LO Drive @ Vdd= +4V MIXERS - I/Q MIXERS / IRM - CHIP IMAGE REJECTION (dB) CONVERSION GAIN (dB) Conversion Gain vs. Temperature @ LO= +2 dBm, Vdd= +4V Input IP3 vs. LO Drive @ Vdd= +4V* 0 20 15 -10 IP3 (dBm) CONVERSION GAIN (dB) -5 -15 -20 -2dBm 0dBm +2dBm +4dBm +6dBm -25 0 dBm +2 dBm +4 dBm +6 dBm 10 5 -30 0 24 26 28 30 32 34 36 RF FREQUENCY (GHz) 26 27 28 29 30 31 32 33 RF FREQUENCY (GHz) * Two-tone input power= -10 dBm each tone, 1 MHz spacing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 59 HMC404 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz Quadrature Channel Data Taken Without IF Hybrid Conversion Gain vs. Vdd @ LO= +2 dBm, IF= 100 MHz Isolation @ LO= +2 dBm, IF= 100 MHz, Vdd= +4V -5 -10 ISOLATION (dB) -15 3.75V 4.0V 4.25V -20 -25 -40 -50 -60 RF/IF LO/RF LO/IF 26 28 30 32 34 36 25 26 27 28 RF FREQUENCY (GHz) 30 31 32 33 34 35 IF Bandwidth @ LO= +2 dBm, Vdd= +4V 0 -5 -5 RESPONSE (dB) 0 -10 -15 RF LO -20 29 RF FREQUENCY (GHz) Return Loss @ LO= +2 dBm, Vdd= +4V -25 -10 -15 Conversion Gain Return Loss -20 -25 -30 -30 0 5 10 15 20 25 30 35 40 0 0.5 FREQUENCY (GHz) 1.5 2 2.5 3 3.5 4 Phase Balance vs. Temperature @ LO= +2 dBm, IF= 100 MHz, Vdd= +4V 3 10 2 5 +25C -55C +85C 1 1 IF FREQUENCY (GHz) PHASE BALANCE (degrees) AMPLITUDE BALANCE (dB) 2LO/RF 2LO/IF -80 24 Amplitude Balance vs. Temperature @ LO= +2 dBm, IF= 100 MHz, Vdd= +4V 0 -1 -2 -3 +25C -55C +85C 0 -5 -10 -15 -20 24 26 28 30 32 RF FREQUENCY (GHz) 3 - 60 -30 -70 RETURN LOSS (dB) MIXERS - I/Q MIXERS / IRM - CHIP 3 CONVERSION GAIN (dB) -20 -10 34 36 24 26 28 30 32 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 34 36 HMC404 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz MxN Spurious @ IF Port, Vdd = +4V MxN Spurious @ RF Port, Vdd = +4V ±5 ±4 ±3 nLO ±2 ±1 0 -3 -2 -1 65 28 71 0 22 -3 1 X 55 2 76 56 3 RF = 30.5 GHz @ -10 dBm LO = 15 GHz @ +2 dBm All values in dBc below IF power level. Measured as downconverter 18 mIF ±5 ±4 ±3 ±2 ±1 -3 66 -2 64 64 -1 X 53 0 17 6 1 22 57 2 76 65 3 55 IF = 0.5 GHz @ -10 dBm LO = 15 GHz @ +2 dBm All values in dBc below RF power level. Measured as upconverter. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 3 36 MIXERS - I/Q MIXERS / IRM - CHIP nLO mRF 3 - 61 HMC404 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz Absolute Maximum Ratings MIXERS - I/Q MIXERS / IRM - CHIP 3 RF / IF Input (Vdd = +5V) +13 dBm LO Drive (Vdd = +5V) +13 dBm Vdd 5.5V Continuous Pdiss (Ta = 85 °C) (derate 2.64 mW/°C above 85 °C) 238 mW Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 [2] NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 62 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD 8. NO CONNECTION REQUIRED TO UNLABED BOND PADS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC404 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz Pad Descriptions Function Description 1 LO This pad is AC coupled and matched to 50 Ohm. 2 Vdd Power supply for the LO Amplifier. An external RF bypass capacitor of 100 - 330 pF is required. A MIM border capacitor is recommended. The bond length to the capacitor should be as short as possible. The ground side of the capacitor should be connected to the housing ground. 3 RF This pad is AC coupled and matched to 50 Ohm. IF2 This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/sink more than 3mA of current or die nonfunction and possible die failure will result. IF1 This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/sink more than 3mA of current or die nonfunction and possible die failure will result. 4 5 Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 MIXERS - I/Q MIXERS / IRM - CHIP Pad Number 3 - 63 HMC404 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz Assembly Diagrams MIXERS - I/Q MIXERS / IRM - CHIP 3 3 - 64 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC404 v03.0907 GaAs MMIC SUB-HARMONICALLY PUMPED IRM MIXER, 26 - 33 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina Thin Film Substrate An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. Handling Precautions Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 3 mil Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 3 MIXERS - I/Q MIXERS / IRM - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 65