Data Sheet GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression (P1dB): 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical Supply voltage: 5 V at 65 mA 50 Ω matched input/output Die size: 2.3 mm × 1.45 mm × 0.05 mm VDD 2 HMC1126 3 RFIN RFOUT 1 Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics 5 4 VGG1 VGG2 13083-001 APPLICATIONS Figure 1. GENERAL DESCRIPTION The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply. Rev. B The HMC1126 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2015–2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC1126 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................5 Applications ....................................................................................... 1 Pin Configuration and Function Descriptions..............................6 Functional Block Diagram .............................................................. 1 Interface Schematics .....................................................................7 General Description ......................................................................... 1 Typical Performance Characteristics ..............................................8 Revision History ............................................................................... 2 Applications Information .............................................................. 13 Electrical Specifications ................................................................... 3 2 GHz to 10 GHz Frequency Range ........................................... 3 Mounting and Bonding Techniques for Millimeterwave GaAs MMICs ......................................................................................... 13 10 GHz to 26 GHz Frequency Range ......................................... 3 Application Circuit ......................................................................... 15 26 GHz to 40 GHz Frequency Range ......................................... 4 Assembly Diagram ..................................................................... 15 40 GHz to 50 GHz Frequency Range ......................................... 4 Outline Dimensions ....................................................................... 16 Absolute Maximum Ratings ............................................................ 5 Ordering Guide .......................................................................... 16 REVISION HISTORY 2/16—Rev. A to Rev. B Change to Features Section ............................................................. 1 Updated Outline Dimensions ....................................................... 16 5/15—Rev. 00.1114 to Rev. A This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. Updated Format .................................................................. Universal Changes to Table 5 ............................................................................ 5 Added Applications Information Section and Figure 35 .......... 13 Added Ordering Guide Section .................................................... 16 Rev. B | Page 2 of 16 Data Sheet HMC1126 ELECTRICAL SPECIFICATIONS 2 GHz TO 10 GHz FREQUENCY RANGE TA = 25°C, VDD = 5 V, VGG2 = 1.4 V, IDD = 65 mA, unless otherwise stated. Adjust VGG1 between −2 V to 0 V to achieve IDD = 65 mA typical. Table 1. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept NOISE FIGURE TOTAL SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 2 8 14.5 Typ Max 10 11 0.002 Unit GHz dB dB/°C 12 14 dB dB 17.5 21 31 4.5 65 dBm dBm dBm mA 10 GHz TO 26 GHz FREQUENCY RANGE TA = 25°C, VDD = 5 V, VGG2 = 1.4 V, IDD = 65 mA, unless otherwise stated. Adjust VGG1 between −2 V to 0 V to achieve IDD = 65 mA typical. Table 2. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept NOISE FIGURE TOTAL SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 10 8 14.5 Rev. B | Page 3 of 16 Typ Max 26 10.5 0.005 Unit GHz dB dB/°C 14 20 dB dB 17.5 21 28 4 65 dBm dBm dBm mA HMC1126 Data Sheet 26 GHz TO 40 GHz FREQUENCY RANGE TA = 25°C, VDD = 5 V, VGG2 = 1.4 V, IDD = 65 mA, unless otherwise stated. Adjust VGG1 between −2 V to 0 V to achieve IDD = 65 mA typical. Table 3. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept NOISE FIGURE TOTAL SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 26 8 13 Typ Max 40 11 0.005 Unit GHz dB dB/°C 20 218 dB dB 16 20.5 28 4 65 dBm dBm dBm mA 40 GHz TO 50 GHz FREQUENCY RANGE TA = 25°C, VDD = 5 V, VGG2 = 1.4 V, IDD = 65 mA, unless otherwise stated. Adjust VGG1 between −2 V to 0 V to achieve IDD = 65 mA typical. Table 4. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept NOISE FIGURE TOTAL SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 40 8 10 Rev. B | Page 4 of 16 Typ Max 50 10.5 0.009 Unit GHz dB dB/°C 12 12 dB dB 13 18 24 5 65 dBm dBm dBm mA Data Sheet HMC1126 ABSOLUTE MAXIMUM RATINGS Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Table 5. Parameter Drain Bias Voltage (VDD) Gate Bias Voltage VGG1 VGG2 For VDD = 8 V1 For VDD = 7 V For VDD = 6 V For VDD = 4 V to 5 V RF Input Power (RFIN) Channel Temperature Continuous Power Dissipation, PDISS (TA = 85°C, Derate 21.3 mW/°C at 85°C) Thermal Resistance, RTH (Channel to Bottom of Die) Storage Temperature Operating Temperature ESD Sensitivity, Human Body Model (HBM) 1 2 Rating 8.5 V −3 V to 0 V 3.6 V 3.0 V >2.0 V >1.2 V 22 dBm 175°C 1.915 W ESD CAUTION 47°C/W2 −65°C to +150°C −55°C to +85°C Class 1A, passed 250 V IDD < 105 mA. Based upon a thermal epoxy of 20 W/°C. Rev. B | Page 5 of 16 HMC1126 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS VDD 2 3 RFOUT HMC1126 TOP VIEW (Not to Scale) 1 5 4 VGG1 VGG2 13083-002 RFIN Figure 2. Pad Configuration Table 6. Pad Function Descriptions Pad No. 1 2 3 4 Mnemonic RFIN VDD RFOUT VGG2 5 Die Bottom VGG1 GND Description RF Input. This pin is ac-coupled and matched to 50 Ω. Power Supply Voltage with Integrated RF Choke. Connect dc bias to this pin to provide drain current (IDD). RF Output. This pin is ac-coupled and matched to 50 Ω. Gate Control 2 for Amplifier. Attach bypass capacitors as shown in Figure 38. For nominal operation, apply 1.4 V to VGG2. Gate Control 1 for Amplifier. Attach bypass capacitors as shown in Figure 38. Adjust this pin to achieve IDD = 65 mA. Die bottom must be connected to RF/dc ground. Rev. B | Page 6 of 16 Data Sheet HMC1126 13083-029 INTERFACE SCHEMATICS VGG2 Figure 3. RFIN Interface Schematic 13083-032 RFIN Figure 6. VGG2 Interface Schematic 13083-030 VDD 13083-033 VGG1 Figure 7. VGG1 Interface Schematic Figure 4. VDD Interface Schematic GND 13083-034 13083-031 RFOUT Figure 5. RFOUT Interface Schematic Figure 8. GND Interface Schematic Rev. B | Page 7 of 16 HMC1126 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 16 –55°C +25°C +85°C 14 0 12 GAIN (dB) 10 –10 –20 10 8 6 S11 S21 S22 –40 0 5 10 15 20 25 35 30 40 45 50 55 FREQUENCY (GHz) 4 0 RETURN LOSS (dB) 30 35 40 45 50 –55°C +25°C +85°C –20 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) –40 13083-004 0 0 15 20 25 30 35 40 45 50 Figure 13. Output Return Loss vs. Frequency at Various Temperatures 18 4V 5V 6V 7V 8V 16 10 FREQUENCY (GHz) Figure 10. Input Return Loss vs. Frequency at Various Temperatures 18 5 13083-007 –30 65mA 80mA 95mA 105mA 16 14 GAIN (dB) 14 12 12 10 10 8 8 5 10 15 20 25 30 FREQUENCY (GHz) 35 40 45 50 6 13083-005 0 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Figure 11. Gain vs. Frequency at Various Supply Voltages (VDD) (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) Rev. B | Page 8 of 16 Figure 14. Gain vs. Frequency at Various Supply Currents (IDD) (For VDD = 5 V, VGG2 = 1.4 V) 13083-008 RETURN LOSS (dB) 25 –10 –30 GAIN (dB) 20 0 –55°C +25°C +85°C –20 6 15 Figure 12. Gain vs. Frequency at Various Temperatures –10 –40 10 FREQUENCY (GHz) Figure 9. Response (Gain and Return Loss) vs. Frequency 0 5 13083-006 –30 13083-003 RESPONSE (dB) 20 Data Sheet 21 19 19 P1dB (dBm) 21 17 15 13 13 9 9 7 7 6 10 14 18 22 26 30 34 38 42 46 50 25 5 13083-009 2 Figure 15. P1dB vs. Frequency at Various Temperatures PSAT (dBm) 19 17 15 13 9 7 7 18 22 26 30 34 38 42 46 50 Figure 16. PSAT vs. Frequency at Various Temperatures 34 38 42 46 50 4V 5V 6V 7V 8V 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) Figure 19. PSAT vs. Frequency at Various Supply Voltages (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) 25 65mA 80mA 95mA 105mA 65mA 80mA 95mA 105mA 23 21 19 19 15 13 17 15 13 11 11 9 9 7 7 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 5 13083-011 2 2 6 10 14 18 22 26 30 34 38 42 46 FREQUENCY (GHz) Figure 17. P1dB vs. Frequency at Various Supply Currents (For VDD = 5 V, VGG2 = 1.4 V) Figure 20. PSAT vs. Frequency at Various Supply Currents (For VDD = 5 V, VGG2 = 1.4 V) Rev. B | Page 9 of 16 50 13083-014 PSAT (dBm) 17 5 30 5 13083-010 14 FREQUENCY (GHz) 21 26 13 9 23 22 15 11 25 18 17 11 10 14 23 19 6 10 25 21 2 6 Figure 18. P1dB vs. Frequency at Various Supply Voltages (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) 21 5 2 FREQUENCY (GHz) –55°C +25°C +85°C 23 PSAT (dBm) 15 11 FREQUENCY (GHz) P1dB (dBm) 17 11 5 4V 5V 6V 7V 8V 23 13083-012 23 P1dB (dBm) 25 –55°C +25°C +85°C 13083-013 25 HMC1126 HMC1126 33 31 29 29 27 27 IP3 (dBm) 31 25 23 25 23 21 21 19 19 17 17 15 2 6 4V 5V 6V 7V 8V 33 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 15 13083-015 IP3 (dBm) 35 –55°C +25°C +85°C Figure 21. Output IP3 vs. Frequency for Various Temperatures, POUT = 0 dBm/Tone 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 13083-018 35 Data Sheet Figure 24. Output IP3 vs. Frequency for Various Supply Voltages, POUT = 0 dBm/Tone (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) 35 80 65mA 80mA 95mA 105mA 33 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 70 31 60 50 27 IM3 (dBc) IP3 (dBm) 29 25 23 40 30 21 20 19 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 0 –5 10 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 70 60 IM3 (dBc) 50 40 40 30 30 20 20 10 10 –2 1 4 POUT/TONE (dBm) 7 10 13083-017 IM3 (dBc) 7 80 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 50 0 –5 4 Figure 25. Output IM3 vs. POUT/Tone at VDD = 4 V, VGG2 = 1.4 V 80 60 1 POUT/TONE (dBm) Figure 22. Output IP3 vs. Frequency for Various Supply Currents, POUT = 0 dBm/Tone (For VDD = 5 V, VGG2 = 1.4 V) 70 –2 Figure 23. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 5 V, VGG2 = 1.4 V 0 –5 –2 1 4 7 POUT/TONE (dBm) Figure 26. Output IM3 vs. POUT/Tone at VDD = 6 V, VGG2 = 2 V Rev. B | Page 10 of 16 10 13083-020 2 13083-016 15 13083-019 10 17 Data Sheet HMC1126 80 80 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 70 60 60 50 40 40 30 30 20 20 10 10 0 –5 1 –2 4 7 10 POUT/TONE (dBm) 0 –5 8 8 7 7 6 6 NOISE FIGURE (dB) 5 4 3 5 4 3 2 8 15 22 29 36 43 50 FREQUENCY (GHz) 0 13083-022 1 4V 5V 6V 7V 8V 1 –55°C +25°C +85°C 1 15 22 29 43 36 50 FREQUENCY (GHz) Figure 31. Noise Figure vs. Frequency at Various Supply Voltages (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) Figure 28. Noise Figure vs. Frequency at Various Temperatures 0 8 65mA 80mA 90mA 105mA 7 8 13083-025 1 –55°C +25°C +85°C –10 6 ISOLATION (dB) –20 5 4 3 –30 –40 –50 2 –60 0 1 8 15 22 29 36 43 50 FREQUENCY (GHz) 13083-023 1 –70 0 5 10 15 20 25 30 FREQUENCY (GHz) 35 40 45 50 13083-026 NOISE FIGURE (dB) Figure 30. Output IM3 vs. POUT/Tone at VDD = 8 V, VGG2 = 3.6 V 2 NOISE FIGURE (dB) 10 POUT/TONE (dBm) Figure 27. Output IM3 vs. POUT/Tone at VDD = 7 V, VGG2 = 3 V 0 7 4 1 –2 13083-024 IM3 (dBc) 50 13083-021 IM3 (dBc) 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 70 Figure 32. Reverse Isolation vs. Frequency for Various Temperatures (For VDD = 5 V, VGG2 = 1.4 V) Figure 29. Noise Figure vs. Frequency at Various Supply Currents (For VDD = 5 V, VGG2 = 1.4 V) Rev. B | Page 11 of 16 HMC1126 Data Sheet 0.55 100 15 90 10 80 5 70 POWER DISSIPATION (W) 20 0.60 110 POUT GAIN PAE IDD IDD (mA) 0.50 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 0.45 0.40 0.35 0.30 0 –10 –5 0 5 10 INPUT POWER (dBm) Figure 33. Power Compression at 24 GHz 60 15 0.20 –6 –4 –2 0 2 4 6 INPUT POWER (dBm) 8 10 12 14 13083-028 0.25 13083-027 POUT (dBm), GAIN (dB), PAE (%) 25 Figure 34. Power Dissipation at 85°C vs. Input Power at Various Frequencies Rev. B | Page 12 of 16 Data Sheet HMC1126 APPLICATIONS INFORMATION The HMC1126 is a GaAs, pHEMT, MMIC, cascode distributed power amplifier. 0.102mm (0.004") THICK GaAs MMIC The cascode distributed amplifier uses a fundamental cell of two FETs in series, source to drain. This fundamental cell then duplicates a number of times. The major benefit of this is an increase in the operation bandwidth. The basic schematic for a fundamental cell is given in Figure 35. WIRE BOND 0.076mm (0.003") RF GROUND PLANE VDD RFOUT 0.127mm (0.005") THICK ALUMINA THIN FILM SUBSTRATE Figure 36. Die Without the Moly Tab Figure 35. Fundamental Cell Schematic 0.102mm (0.004") THICK GaAs MMIC The recommended bias sequence during power up is the following: 1. 2. 3. 4. 5. 6. WIRE BOND 0.076mm (0.003") Connect GND. Set VGG1 to −2 V. Set VDD to 5 V. Set VGG2 to 1.4 V. Increase VGG1 to achieve a typical quiescent current (IDQ) = 65 mA. Apply the RF signal. RF GROUND PLANE 0.150mm (0.005") THICK MOLY TAB 0.254mm (0.010") THICK ALUMINA THIN FILM SUBSTRATE The recommended bias sequence during power down is the following: 1. 2. 3. 4. 5. 13083-038 VGG1 13083-039 RFIN 13083-037 VGG2 Figure 37. Die With the Moly Tab Turn off the RF signal. Decrease VGG1 to −2 V to achieve IDQ = 0 mA. Decrease VGG2 to 0 V. Decrease VDD to 0 V. Increase VGG1 to 0 V. Place microstrip substrates as close to the die as possible to minimize bond wire length. Typical die to substrate spacing is 0.076 mm to 0.152 mm (3 mil to 6 mil). Handling Precautions To avoid permanent damage, follow these storage, cleanliness, static sensitivity, transient, and general handling precautions: MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Attach the die directly to the ground plane eutectically or with conductive epoxy (see the Handling Precautions section, the Mounting section, and the Wire Bonding section). Microstrip, 50 Ω, transmission lines on 0.127 mm (5 mil) thick alumina, thin film substrates are recommended for bringing the radio frequency to and from the chip (see Figure 36). When using 0.254 mm (10 mil) thick alumina, thin film substrates, raise the die 0.150 mm (6 mils) to ensure that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick, molybdenum (Mo) heat spreader (moly tab) which can then be attached to the ground plane (see Figure 36 and Figure 37). Rev. B | Page 13 of 16 Place all bare die in either waffle or gel-based ESD protective containers and then seal the die in an ESD protective bag for shipment. Once the sealed ESD protective bag is opened, store all die in a dry nitrogen environment. Handle the chips in a clean environment. Do not attempt to clean the chip using liquid cleaning systems. Follow ESD precautions to protect against ESD strikes. While bias is applied, suppress instrument and bias supply transients. Use shielded signal and bias cables to minimize inductive pick up. Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and must not be touched with vacuum collet, tweezers, or fingers. HMC1126 Data Sheet Mounting Wire Bonding The chip is back metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. Ensure that the mounting surface is clean and flat. RF bonds made with two 1 mil wires are recommended. Ensure that these bonds are thermosonically bonded with a force of 40 grams to 60 grams. DC bonds of an 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Make ball bonds with a force of 40 grams to 50 grams and wedge bonds with a force of 18 grams to 22 grams. Make all bonds with a nominal stage temperature of 150°C. Apply a minimum amount of ultrasonic energy to achieve reliable bonds. Make all bonds as short as possible, less than 12 mils (0.31 mm). When eutectic die attached, an 80/20 gold tin preform is recommended with a work surface temperature of 255°C and a tool temperature of 265°C. When hot 90/10 nitrogen/hydrogen gas is applied, ensure that tool tip temperature is 290°C. Do not expose the chip to a temperature greater than 320°C for more than 20 seconds. For attachment, no more than 3 seconds of scrubbing is required. When epoxy die attached, apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the schedule of the manufacturer. Rev. B | Page 14 of 16 Data Sheet HMC1126 APPLICATION CIRCUIT VDD 0.1µF 100pF 2 1 RFIN 4 RFOUT 3 VGG2 VGG1 0.1µF 100pF 100pF 0.1µF 13083-036 5 Figure 38. Application Circuit ASSEMBLY DIAGRAM 0.1µF TO VDD SUPPLY ALL BOND WIRES ARE 1MIL DIAMETER 100pF 3MIL NOMINAL GAP 100pF 100pF 0.1µF 0.1µF TO VGG1 SUPPLY Figure 39. Assembly Diagram Rev. B | Page 15 of 16 TO VGG2 SUPPLY 13083-035 50Ω TRANSMISSION LINE HMC1126 Data Sheet OUTLINE DIMENSIONS 2.299 0.05 0.100 × 0.100 0.150 0.629 2 0.501 0.200 3 0.200 0.150 1.449 0.200 1 0.200 0.605 5 4 TOP VIEW 0.095 (CIRCUIT SIDE) 0.095 0.150 0.150 1.539 0.150 SIDE VIEW 01-21-2016-B 0.208 Figure 40. 5-Pad Bare Die [CHIP] (C-5-4) Dimensions shown in millimeters ORDERING GUIDE Model1 HMC1126 1 Temperature Range −55°C to +85°C Package Description 5-Pad Bare Die [CHIP] The HMC1126 is RoHS Compliant. ©2015–2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13083-0-2/16(B) Rev. B | Page 16 of 16 Package Option C-5-4