Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC462LP5 / 462LP5E v05.0213 AMPLIFIERS - LOW NOISE - SMT GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC462LP5 / HMC462LP5E Wideband LNA is ideal for: Noise Figure: 2.5 dB @ 10 GHz • Telecom Infrastructure P1dB Output Power: +14.5 dBm @ 10 GHz • Microwave Radio & VSAT Self-Biased: +5V @ 66mA • Military EW, ECM & C3I 50 Ohm Matched Input/Output • Test Instrumentation 25 mm2 Leadless SMT Package Gain: 13 dB • Fiber Optics Functional Diagram General Description The HMC462LP5 & HMC462LP5E are GaAs MMIC pHEMT Low Noise Distributed Amplifiers in leadless 5x5 mm surface mount packages which operate between 2 and 20 GHz. The self-biased amplifier provides 13 dB of gain, 2.5 to 3.5 dB noise figure and +14.5 dBm of output power at 1 dB gain compression while requiring only 66 mA from a single +5V supply. Gain flatness is excellent from 6 - 18 GHz making the HMC462LP5 & HMC462LP5E ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifications, TA = +25° C, Vdd= 5V Parameter Min. Frequency Range Gain Max. Min. 2-6 12 ±0.5 Gain Variation Over Temperature Typ. Max. Min. 6 - 14 14 Gain Flatness 11 13 10 ±0.5 Typ. Max. Units 14 - 20 GHz 12 dB ±0.5 dB 0.015 0.025 0.02 0.03 0.03 0.04 dB/ °C Noise Figure 3.0 4.0 2.5 4.0 4.0 6.0 dB Input Return Loss 15 13 11 dB Output Return Loss 12 12 8 dB 12 dBm Output Power for 1 dB Compression (P1dB) 12 15 11 14 9 Saturated Output Power (Psat) 17 16 15 dBm Output Third Order Intercept (IP3) 26 25 22 dBm Supply Current (Idd) (Vdd= 5V) 1 Typ. 41 66 84 41 66 84 41 66 84 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Gain & Return Loss Gain vs. Temperature 20 16 5 GAIN (dB) RESPONSE (dB) 10 0 -5 -10 12 8 -15 4 -20 -25 -30 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) S21 S11 S22 12 14 16 18 20 22 +85 C -40 C Output Return Loss vs. Temperature 0 OUTPUT RETURN LOSS (dB) 0 INPUT RETURN LOSS (dB) 10 +25 C Input Return Loss vs. Temperature -5 -10 -15 -20 -25 -30 -5 -10 -15 -20 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) +25 C 8 10 12 14 16 18 20 22 FREQUENCY (GHz) +85 C -40 C +25 C +85 C -40 C Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 10 -10 8 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 8 FREQUENCY (GHz) AMPLIFIERS - LOW NOISE - SMT 20 15 -20 -30 -40 6 4 2 -50 0 -60 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 +25C +85C 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) -40C +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz 20 17 17 Psat (dBm) P1dB (dBm) Psat vs. Temperature 20 14 11 8 14 11 8 5 5 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) +25 C +85 C +25 C -40 C GAIN (dB), P1dB (dBm), Noise Figure (dB) 30 IP3 (dBm) 27 24 21 18 15 2 4 6 8 10 12 14 12 14 16 18 20 22 16 +85 C -40 C 18 20 22 22 72 20 70 18 68 16 66 14 64 12 62 10 60 8 58 6 56 4 54 2 52 50 0 4.5 5 Vdd (V) FREQUENCY (GHz) +25 C 10 Gain, Power, Noise Figure & Supply Current vs. Supply Voltage @ 10 GHz Output IP3 vs. Temperature 0 8 FREQUENCY (GHz) +85 C -40 C Idd (mA) AMPLIFIERS - LOW NOISE - SMT P1dB vs. Temperature Gain 5.5 P1dB Noise Figure Idd Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5 Vdc) +18 dBm +4.5 66 Channel Temperature 150 °C +5.0 67 +5.5 68 +7.5 71 +8.0 72 +8.5 73 Continuous Pdiss (T = 85 °C) (derate 50 mW/°C above 85 °C) 3.25 W Thermal Resistance (channel to ground paddle) 52 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz AMPLIFIERS - LOW NOISE - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC462LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC462LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H462 XXXX H462 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz Pin Descriptions AMPLIFIERS - LOW NOISE - SMT Pin Number 5 Function Description 1 - 4, 6 - 20, 22 - 29, 31, 32 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 5 RFIN This pad is AC coupled and matched to 50 Ohms. 21 RFOUT This pad is AC coupled and matched to 50 Ohms. 30 Vdd Power supply voltage for the amplifier. External bypass capacitors are required. Ground Paddle GND Ground paddle must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC462LP5 / 462LP5E v05.0213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 108338 Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm Molex Header C1 100 pF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 4.7 µF Capacitor, Tantalum U1 HMC462LP5 / HMC462LP5E PCB [2] 109751 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6