HITTITE HMC464LP5

HMC464LP5
v00.0304
MICROWAVE CORPORATION
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
AMPLIFIERS - SMT
8
Typical Applications
Features
The HMC464LP5 wideband driver is ideal for:
+26 dBm P1dB Output Power
• Telecom Infrastructure
Gain: 14 dB
• Microwave Radio & VSAT
+30 dBm Output IP3
• Military EW, ECM & C3I
Supply Voltage: +8.0V @ 290 mA
• Test Instrumentation
50 Ohm Matched Input/Output
• Fiber Optics
25 mm2 Leadless SMT Package
Functional Diagram
General Description
The HMC464LP5 is a GaAs MMIC PHEMT Distributed Power Amplifier in a leadless 5 x 5 mm
surface mount package which operates between
2 and 20 GHz. The amplifier provides 14 dB of
gain, +30 dBm output IP3 and +26 dBm of output
power at 1 dB gain compression while requiring
290 mA from a +8V supply. Gain flatness is good
from 2 - 18 GHz making the HMC464LP5 ideal
for EW, ECM and radar driver amplifier as well as
test equipment applications. The wideband amplifier I/O’s are internally matched to 50 Ohms.
Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
2.0 - 6.0
12
14
Gain Flatness
±0.5
Gain Variation Over Temperature
0.025
Typ.
Max.
Min.
6.0 - 16.0
11.5
13.5
8
±0.5
0.035
0.03
Typ.
Max.
GHz
11
dB
±1.0
0.04
0.05
dB
0.06
dB/ °C
Input Return Loss
15
10
7
dB
Output Return Loss
15
9
11
dB
21
dBm
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
23.5
26.5
22
25
18
27.5
26
24.0
dBm
Output Third Order Intercept (IP3)
32
26
22
dBm
Noise Figure
4.0
4.0
6.0
dB
Supply Current
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.)
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
8 - 268
Units
16.0 - 20.0
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC464LP5
v00.0304
MICROWAVE CORPORATION
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
MMIC
PUMPED
MIXER
GainGaAs
& Return
LossSUB-HARMONICALLY Gain
vs. Temperature
20
20
15
18
0
-5
-10
12
10
8
-15
6
-20
4
-25
2
+25C
+85C
-40C
0
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
OUTPUT RETURN LOSS (dB)
+25C
+85C
-40C
-5
-10
-15
-20
-25
-30
AMPLIFIERS - SMT
14
S21
S11
S22
-30
INPUT RETURN LOSS (dB)
8
16
5
GAIN (dB)
RESPONSE (dB)
10
17 - 25 GHz
+25C
+85C
-40C
-5
-10
-15
-20
-25
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
8
10
12
14
16
18
20
22
18
20
22
FREQUENCY (GHz)
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
0
12
+25C
+85C
-40C
-20
+25C
+85C
-40C
10
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
11
-10
-30
-40
-50
9
8
7
6
5
4
3
2
-60
1
-70
0
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 269
HMC464LP5
v00.0304
MICROWAVE CORPORATION
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
GaAs
MMIC SUB-HARMONICALLY Psat
PUMPED
MIXER
P1dB
vs. Temperature
vs. Temperature
30
30
28
28
26
26
24
24
Psat (dBm)
P1dB (dBm)
22
20
18
+25C
+85C
-40C
16
20
18
14
14
12
12
10
+25C
+85C
-40C
10
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
FREQUENCY (GHz)
34
32
30
28
26
24
+25C
+85C
-40C
20
18
16
0
2
4
6
8
10
12
14
8
10
12
14
16
18
20
16
18
20
22
FREQUENCY (GHz)
32
30
28
26
24
22
Gain
P1dB
Psat
OIP3
20
18
16
14
12
10
7.5
8
8.5
SUPPLY VOLTAGE (Vdc)
Absolute Maximum Ratings
8 - 270
22
Gain, Power & OIP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
36
22
6
FREQUENCY (GHz)
Output IP3 vs. Temperature
OIP3 (dBm)
17 - 25 GHz
22
16
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
AMPLIFIERS - SMT
8
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+9.0 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
+7.5
292
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
+8.0
290
RF Input Power (RFin)(Vdd = +8.0 Vdc)
+23 dBm
+8.5
288
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
3.35 W
Thermal Resistance
(channel to ground paddle)
19.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC464LP5
v00.0304
MICROWAVE CORPORATION
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Outline Drawing
AMPLIFIERS - SMT
8
Pad Descriptions
Pad Number
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Function
Description
5
RFIN
This pin is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
15
Vgg1
Gate Control for amplifier. Adjust between -2 to 0V
to achieve Idd= 290 mA.
21
RFOUT & Vdd
RF output for amplifier. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
30
Vgg2
Control voltage for amplifier. +3V should be applied to
Vgg2 for nominal operation.
Ground
Paddle
GND
Ground paddle must be connected to RF/DC ground.
1-4, 6-14,
16-20, 22-29,
31, 32
N/C
No connection. These pins may be connected to RF ground.
Performance will not be affected.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 271
v00.0304
MICROWAVE CORPORATION
HMC464LP5
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
AMPLIFIERS - SMT
8
8 - 272
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC464LP5
v00.0304
MICROWAVE CORPORATION
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Evaluation PCB
AMPLIFIERS - SMT
8
List of Materials for Evaluation PCB 108344*
Item
Description
J1, J2
PC Mount SMA Connector
J3, J4
2 mm Molex Header
C1, C2
100 pF Capacitor, 0402 Pkg.
C3, C4
1000 pF Capacitor, 0603 Pkg.
C5, C6
4.7 µF Capacitor, Tantalum
U1
HMC464LP5
PCB**
108342 Evaluation PCB
The circuit board used in the final application should use
RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown. A sufficient number of
VIA holes should be used to connect the top and bottom
ground planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 273