Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC405 v03.0109 2 Typical Applications Features An excellent cascadable 50 Ohm Gain Block or LO Driver for: Gain: 16 dB • Microwave & VSAT Radios DRIVER & GAIN BLOCK AMPLIFIERS - CHIP InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz • Test Equipment P1dB Output Power: +13 dBm Stable Gain Over Temperature 50 Ohm I/O’s • Military EW, ECM, C3I Small Size: 0.38 x 0.58 x 0.1 mm • Space Telecom Functional Diagram General Description The HMC405 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC to 10 GHz amplifier. This amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC405 offers 16 dB of gain and an output IP3 of +32 dBm while requiring only 50 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC405 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.5mm (20 mils). Electrical Specifi cations, Vs= +5 V, Rbias= 22 Ohm, TA = +25° C Parameter Min. Typ. Max. Gain 16 15 13 dB dB dB Gain Variation Over Temperature DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz 0.004 0.015 0.02 dB/ °C dB/ °C dB/ °C Input Return Loss DC - 3.0 GHz 3.0 - 10.0 GHz 10 11 dB dB Output Return Loss DC - 3.0 GHz 3.0 - 10.0 GHz 9 10 dB dB Reverse Isolation DC - 7.0 GHz 7.0 - 10.0 GHz 20 17 dB dB Output Power for 1 dB Compression (P1dB) DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz 15 13 10 dBm dBm dBm Output Third Order Intercept (IP3) DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz 30 25 22 dBm dBm dBm Noise Figure DC - 7.0 GHz 7.0 - 10.0 GHz 4 4.5 dB dB 50 mA Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 2 - 20 Units DC - 3.0 GHz 3.0 - 7.0 GHz 7.0 - 10.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC405 v03.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Gain & Return Loss Gain vs. Temperature 2 20 20 10 5 S21 S11 S22 0 -5 -10 14 +25 C +85 C -55 C 11 8 -15 5 -20 0 1 2 3 4 5 6 7 8 9 0 10 1 2 3 FREQUENCY (GHz) 0 -3 -3 +25 C +85 C -55 C -9 -12 6 7 8 9 10 +25 C +85 C -55 C -6 -9 -12 -15 -15 0 2 4 6 8 10 0 1 2 FREQUENCY (GHz) 4 5 6 7 8 9 10 Noise Figure vs. Temperature 10 -5 8 NOISE FIGURE (dB) 0 +25 C +85 C -55 C -10 3 FREQUENCY (GHz) Reverse Isolation vs. Temperature REVERSE ISOLATION (dB) 5 Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -6 4 FREQUENCY (GHz) -15 -20 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 17 GAIN (dB) RESPONSE (dB) 15 +25 C +85 C -55 C 6 4 2 -25 0 0 2 4 6 FREQUENCY (GHz) 8 10 1 2.5 4 5.5 7 8.5 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 21 HMC405 v03.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz P1dB vs. Temperature 2 Psat vs. Temperature 20 20 18 16 16 Psat (dBm) P1dB (dBm) 12 10 8 +25 C +85 C -55 C 6 4 +25 C +85 C -55 C 8 4 0 0 0 1 2 3 4 5 6 7 8 9 0 10 1 2 FREQUENCY (GHz) Power Compression @ 1 GHz 4 5 6 7 8 9 10 Power Compression @ 7 GHz 22 Pout (dBm), GAIN (dB), PAE (%) 22 18 14 10 6 2 -2 Pout Gain PAE -6 -10 -20 -16 -12 -8 -4 0 4 18 14 10 6 2 -2 Pout Gain PAE -6 -10 -20 -18 -16 -14 -12 -10 -8 8 INPUT POWER (dBm) +25 C +85 C -55 C 14 10 1 2 3 4 5 6 FREQUENCY (GHz) -2 0 2 4 6 7 8 9 10 80 40 35 60 30 25 40 20 15 10 5 Gain P1dB Psat IP3 Icq 0 0 4.5 20 4.75 5 5.25 Vs(Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 Icq (mA) 22 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 26 0 -4 Gain, Power, Output IP3 & Supply Current vs. Supply Voltage @ 1 GHz 34 18 -6 INPUT POWER (dBm) Output IP3 vs. Temperature IP3 (dBm) 3 FREQUENCY (GHz) 30 2 - 22 12 2 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 14 HMC405 v03.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Absolute Maximum Ratings +7 Vdc RF Input Power (RFiIN)(Vcc = +5 Vdc) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 5.21 mW/°C above 85 °C) 0.339 W Thermal Resistance (junction to die bottom) 192 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD Die Packaging Information [1] Standard Alternate GP-3 (Gel Pack) [2] DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Collector Bias Voltage [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 23 HMC405 v03.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Pad Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Pad Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2 RFOUT RF output and DC Bias for the output stage. Die Bottom GND Die bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias Recommended Component Values Frequency (MHz) Component 50 2 - 24 1000 3000 7000 L1 270 nH 56 nH 8.2 nH 2.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC405 v03.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Assembly Diagram Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Mounting The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean and fl at. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 - 25