Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC463LP5 / 463LP5E v08.0511 Amplifiers - Low Noise - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Typical Applications Features The HMC463LP5(E) is ideal for: Gain: 13 dB • Telecom Infrastructure Noise Figure: 2.8 dB @ 10 GHz • Microwave Radio & VSAT P1dB Output Power: +18 dBm @ 10 GHz • Military EW, ECM & C I Supply Voltage: +5V @ 60 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 32 Lead 5 x 5 mm SMT Package: 25 mm² Functional Diagram General Description 3 The HMC463LP5(E) is a GaAs MMIC pHEMT Low Noise AGC Distributed Amplifier packaged in a leadless 5x5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 13 dB of gain, 2.8 dB noise figure and 18 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 8 dB typical. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC463LP5(E) ideal for EW, ECM RADAR and test equipment applications. The HMC463LP5(E) LNA I/Os are internally matched to 50 Ohms and are internally DC blocked. Electrical Specifications, TA = +25 °C, Vdd = 5V, Idd = 60 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. 2-6 10 ±0.5 Gain Variation Over Temperature Max. Min. 6 - 18 13 Gain Flatness Typ. 9 12 8 ±0.5 Typ. Max. Units 18 - 20 GHz 11 dB ±0.5 dB 0.010 0.015 0.010 0.015 0.010 0.015 Noise Figure 3 4 3 5 5.5 6.5 Input Return Loss 15 13 12 dB Output Return Loss 13 10 10 dB 12 dBm Output Power for 1 dB Compression (P1dB) 16 19 11 16 10 dB/ °C dB Saturated Output Power (Psat) 21 19 19 dBm Output Third Order Intercept (IP3) 30 24 22 dBm Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.9V Typ.) 60 80 60 80 60 80 mA * Adjust Vgg1 between -2 to -0V to achieve Idd = 60 mA typical. 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Gain & Return Loss 7 Gain vs. Temperature 15 16 5 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -5 -10 12 8 -15 +25C +85C -40C 4 -20 -25 0 -30 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 Input Return Loss vs. Temperature 10 12 14 16 18 20 22 Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) +25C +85C -40C -5 RETURN LOSS (dB) 8 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 -20 +25C +85C -40C -5 -10 Amplifiers - Low Noise - SMT 20 20 -15 -25 -20 -30 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 Reverse Isolation vs. Temperature 10 12 14 16 18 20 22 18 20 22 Noise Figure vs. Temperature 0 10 +25C +85C -40C +25C +85C -40C 8 NOISE FIGURE (dB) -10 ISOLATION (dB) 8 FREQUENCY (GHz) FREQUENCY (GHz) -20 -30 -40 6 4 2 -50 -60 0 0 2 4 6 8 10 12 14 FREQUENCY (GHz) 16 18 20 22 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC463LP5 / 463LP5E v08.0511 Psat vs. Temperature 26 26 22 22 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 18 14 18 +25C +85C -40C 10 +25C +85C -40C 14 10 6 6 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 FREQUENCY (GHz) GAIN (dB), P1dB (dBm), Psat (dBm) 32 29 IP3 (dBm) 26 23 20 +25C +85C -40C 14 14 16 18 20 22 24 4.5 22 4 20 3.5 18 3 16 2.5 14 2 12 1.5 10 8 1 Gain P1dB Psat NOISE FIGURE 2 4 6 8 10 12 14 16 18 20 22 0.5 0 4.5 5 FREQUENCY (GHz) 5.5 Vdd (V) Gain, P1dB & Output IP3 vs. Control Voltage @ 10 GHz Noise Figure & Supply Current vs. Control Voltage @ 10 GHz 32 75 5.5 28 70 5 65 4.5 60 4 55 3.5 50 3 45 2.5 40 2 35 1.5 24 Idd (mA) 20 16 12 8 4 Gain P1dB IP3 0 Idd 25 -4 -1.4 -1.2 1 30 NOISE FIGURE 0.5 0 20 -1 -0.8 -0.6 -0.4 -0.2 Vgg2 (V) 0 0.2 0.4 0.6 0.8 1 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1 Vgg2 (V) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) GAIN (dB), P1dB (dBm), IP3 (dBm) 12 6 0 7-3 10 Gain, Power & Noise Figure vs. Supply Voltage @ 10 GHz, Fixed Vgg1 Output IP3 vs. Temperature 17 8 FREQUENCY (GHz) NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 18 13 GAIN (dB) 8 3 -2 Vgg2 = -1.3V Vgg2 = -1.2V Vgg2 = -1.1V Vgg2 = -1.0V Vgg2 = -0.9V -7 Vgg2 = -0.8V Vgg2 = -0.6V Vgg2 = -0.4V Vgg2 = -0.2V Vgg2 = 0V -12 0 2 4 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 7 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +9V Gate Bias Voltage (Vgg1) -2 to 0V Gate Bias Current (Igg1) 2.5 mA Gate Bias Voltage (Vgg2)(AGC) (Vdd -9) Vdc to +2V RF Input Power (RFIN)(Vdd = +5V) +18 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 19.1 mW/°C above 85 °C) 1.24 W Thermal Resistance (channel to ground paddle) 52.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +4.5 58 +5.0 60 +5.5 62 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Low Noise - SMT Gain @ Several Control Voltages (Vgg2) 7-4 HMC463LP5 / 463LP5E v08.0511 Outline Drawing Amplifiers - Low Noise - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15 mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05 mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC463LP5 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC463LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H463 XXXX H463 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz Pin Number Function Description 1, 3, 4, 6-14, 16-20, 22-29, 31, 32 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2 Vgg2 Optional gate control if AGC is required. Leave Vgg2 open circuited if AGC is not required. Typical Vgg2 = -1.5V to 0V 5 RFIN This pad is AC coupled and matched to 50 Ohms 15 Vgg1 Gate control for amplifier. Adjust to achieve Idd = 60 mA. 21 RFOUT This pad is AC coupled and matched to 50 Ohms 30 Vdd Power supply voltage for the amplifier. External bypass capacitors are required Ground Paddle GND Ground paddle must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Low Noise - SMT 7 Pin Descriptions 7-6 HMC463LP5 / 463LP5E v08.0511 Application Circuit Amplifiers - Low Noise - SMT 7 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC463LP5 / 463LP5E v08.0511 GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 108341 Item Description J1 - J2 SRI K Connector J3 - J4 2 mm Molex Header C1 - C3 100 pF Capacitor, 0402 Pkg. C4 - C6 1000 pF Capacitor, 0603 Pkg. C7 - C8 4.7 µF Capacitor, Tantalum U1 HMC463LP5(E) Amplifier PCB [2] 109949 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8