VISHAY SIB800EDK

New Product
SiB800EDK
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode
FEATURES
PRODUCT SUMMARY
0.225 at VGS = 4.5 V
ID (A)a
1.5
0.270 at VGS = 2.5 V
1.5
0.345 at VGS = 1.8 V
1.5
0.960 at VGS = 1.5 V
0.5
VDS (V)
RDS(on) (Ω)
20
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT® Plus Schottky Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm profile
• Typical ESD Protection 2800 V
Qg (Typ.)
1.1 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)a
30
0.29 at 10 mA
0.4
APPLICATIONS
• Portable Devices
• DC/DC Converters
PowerPAK SC75-6L-Dual
D
K
1
A
200 Ω
2
Marking Code
NC
3
D
K
K
GAX
Part # code
D
6
G
5
1.60 mm
4
S
G
XXX
Lot Traceability
and Date code
1.60 mm
Ordering Information: SiB800EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage (MOSFET)
Limit
Reverse Voltage (Schottky)
VKA
30
Gate-Source Voltage (MOSFET)
VGS
±6
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
TC = 25 °C
TA = 25 °C
IS
IF
Average Forward Current (Schottky)
IFM
Pulsed Forward Current (Schottky)
TC = 25 °C
Maximum Power Dissipation (MOSFET)
Soldering Recommendations (Peak Temperature)d, e
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
1.3b, c
4
A
1.5a
0.9b, c
0.4b
0.8
3.1
2
1.1b, c
PD
0.7b, c
3.1
TC = 70 °C
2
TA = 25 °C
1.1b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
1.5a, b, c
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation (Schottky)
1.5a
TC = 70 °C
TA = 70 °C
V
1.5a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Unit
20
TJ, Tstg
0.7b, c
- 55 to 150
260
W
°C
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1
New Product
SiB800EDK
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJC
RthJA
RthJC
t≤5s
Steady State
t≤5s
Steady State
Maximum Junction-to-Ambient (MOSFET)b, f
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, f
Maximum Junction-to-Case (Drain) (Schottky)
Typical
90
32
90
32
Maximum
115
40
115
40
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 125 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Transconductancea
gfs
Forward
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Rg
tr
mV/°C
- 2.3
1.0
V
VDS = 0 V, VGS = ± 3 V
±1
µA
VDS = 0 V, VGS = ± 6 V
±1
mA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 1.6 A
0.4
4
µA
A
0.183
0.225
VGS = 2.5 V, ID = 1.5 A
0.220
0.270
VGS = 1.8 V, ID = 1.3 A
0.275
0.345
VGS = 1.5 V, ID = 0.3 A
0.320
0.960
VDS = 10 V, ID = 1.6 A
3.5
VDS = 10 V, VGS = 4.5 V, ID = 1.7 A
0.2
1.1
Ω
S
1.7
nC
0.1
f = 1 MHz
td(on)
td(off)
V
21
20
VDD = 10 V, RL = 7.7 Ω
ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω
tf
Ω
200
30
12
20
70
105
20
30
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
1.5
4
IS = 1.3 A, VGS = 0 V
0.9
1.2
A
V
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
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Document Number: 68860
S-83045-Rev. B, 22-Dec-08
New Product
SiB800EDK
Vishay Siliconix
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
IF = 10 mA
VF
Forward Voltage Drop
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
Min.
Typ.
Max.
0.23
0.29
IF = 10 mA, TJ = 125 °C
0.11
0.14
IF = 0.1 A
0.32
0.38
Vr = 20 V
0.005
0.050
Vr = 20 V, TJ = 85 °C
0.150
1.5
Vr = 15 V
16
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
10
I F - Forward Current (A)
I R - Reverse Current (mA)
1
VR = 30 V
10-1
VR = 20 V
10-2
VR = 10 V
10-3
1
TJ = 150 °C
0.1
TJ = 25 °C
VR = 5 V
10-4
0
25
50
75
100
125
0.01
0.0
150
0.2
T J - Junction Temperature (°C)
0.4
0.6
0.8
1.0
VF - Forward Voltage (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
Junction Capacitance (pF)
120
90
60
30
0
0
5
10
15
20
25
30
VKA - Reverse Voltage (V)
Capacitance
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
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3
New Product
SiB800EDK
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Document Number: 68860
S-83045-Rev. B, 22-Dec-08
New Product
SiB800EDK
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
35
10-1
10-2
10-3
I GSS - Gate Current (A)
I GSS - Gate Current (mA)
30
25
20
15
10
10-4
10-5
TJ = 25 °C
TJ = 150 °C
10-6
10-7
10-8
5
10-9
0
10-10
0
2
4
6
8
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
Gate Current vs. Gate-to-Source Voltage
4.0
2.0
3.5
VGS = 5 thru 2 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
3.0
2.5
2.0
VGS = 1.5 V
1.5
1.2
0.8
TC = 25 °C
1.0
0.4
TC = 125 °C
0.5
VGS = 1 V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0.0
0.0
3.0
0.5
1.0
1.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
0.50
ID = 1.7 A
VGS = 1.5 V
VGS - Gate-to-Source Voltage (V)
R DS(on) - On-Resistance (Ω)
0.45
VGS = 1.8 V
0.40
0.35
0.30
VGS = 2.5 V
0.25
4
VDS = 10 V
VDS = 16 V
2
0.20
VGS = 4.5 V
0.15
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.0
0.3
0.6
0.9
1.2
ID - Drain Current (A)
Qg - Total Gate Charge (nC)
On-Resistance vs. Drain Current
Gate Charge
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
1.5
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New Product
SiB800EDK
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
1.7
1.6
I S - Source Current (A)
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A
1.4
(Normalized)
R DS(on) - On-Resistance
1.5
1.3
1.2
1.1
VGS = 1.5 V; ID = 0.4 A
1.0
1
TJ = 25 °C
TJ = 150 °C
0.1
0.9
0.8
0.7
- 50
- 25
0
25
50
75
100
125
0.01
0.0
150
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Normalized On-Resistance vs. Junction Temperature
8
1.0
6
Power (W)
R DS(on) - On-Resistance (Ω)
ID = 1.6 A
0.8
0.6
0.4
4
TJ = 125 °C
2
0.2
TJ = 25 °C
0.0
0
1
2
3
4
0
0.001
5
0.01
0.1
1
10
100
1000
Time (s)
VGS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
0.9
10
Limited by RDS(on)*
I D - Drain Current (A)
VGS(th) (V)
0.8
0.7
ID = 250 µA
0.6
100 µs
1
1 ms
10 ms
0.1
100 ms
1 s, 10 s
DC
TA = 25 °C
Single Pulse
0.5
BVDSS Limited
0.4
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
100
125
150
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68860
S-83045-Rev. B, 22-Dec-08
New Product
SiB800EDK
Vishay Siliconix
4
4
3
3
Power Dissipation (W)
I D - Drain Current (A)
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2
Package Limited
2
1
1
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
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7
New Product
SiB800EDK
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68860.
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8
Document Number: 68860
S-83045-Rev. B, 22-Dec-08
Package Information
Vishay Siliconix
b
e
PIN1
b
e
PIN3
PIN2
PIN1
PIN3
PIN6
K3
PIN5
E1
E1
K
K
D1
D1
D1
E3
E1
D2
K
E2 K4
L
PIN2
L
PowerPAK® SC75-6L
PIN6
K2
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
PIN5
K1
PIN4
K2
BACKSIDE VIEW OF DUAL
D
A
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
C
A1
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.18
0.25
0.33
0.007
0.010
0.013
0.18
0.25
0.33
0.007
0.010
0.013
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
D1
0.57
0.67
0.77
0.022
0.026
0.030
0.34
0.44
0.54
0.013
0.017
0.021
D2
0.10
0.20
0.30
0.004
0.008
0.012
E
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
E1
1.00
1.10
1.20
0.039
0.043
0.047
0.51
0.61
0.71
0.020
0.024
0.028
E2
0.20
0.25
0.30
0.008
0.010
0.012
E3
0.32
0.37
0.42
0.013
0.015
0.017
e
0.50 BSC
0.020 BSC
0.50 BSC
0.020 BSC
K
0.180 TYP
0.007 TYP
0.245 TYP
0.010 TYP
K1
0.275 TYP
0.011 TYP
0.320 TYP
0.013 TYP
K2
0.200 TYP
0.008 TYP
0.200 BSC
0.008 TYP
K3
0.255 TYP
0.010 TYP
K4
0.300 TYP
L
0.15
0.25
0.012 TYP
0.35
T
0.006
0.010
0.014
0.15
0.25
0.35
0.006
0.010
0.014
0.03
0.08
0.13
0.001
0.003
0.005
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Dual
2.2
(0.087)
1.25
(0.049)
0.25
(0.01)
1.6
(0.063)
(0.024)
0.61
2.2
(0.087)
(0,0)
0.32
(0.013)
0.44
(0.017)
0.25
(0.01)
0.375
(0.015)
1
0.5
(0.02)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70489
Revision: 28-Oct-08
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15
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1