CMOS 1.8 V to 5.5 V, 2.5 Ω SPDT Switch/2:1 Mux in Tiny SC70 Package ADG779 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V to 5.5 V single supply 2.5 Ω on resistance 0.75 Ω on-resistance flatness −3 dB bandwidth >200 MHz Rail-to-rail operation 6-lead SC70 package Fast switching times tON 20 ns tOFF 6 ns Typical power consumption (<0.01 μW) TTL/CMOS compatible ADG779 S2 D S1 SWITCHES SHOWN FOR A LOGIC 1 INPUT 02491-001 IN Figure 1. APPLICATIONS Battery-powered systems Communication systems Sample hold systems Audio signal routing Video switching Mechanical reed relay replacements GENERAL DESCRIPTION The ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. PRODUCT HIGHLIGHTS 1. Tiny 6-Lead SC70 Package. 2. 1.8 V to 5.5 V Single-Supply Operation. The ADG779 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 V and 5 V supply rails. 3. Each switch of the ADG779 conducts equally well in both directions when on. The ADG779 exhibits break-before-make switching action. Very Low RON (5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V operation, RON is typically 40 Ω over the temperature range. 4. On-Resistance Flatness (RFLAT (ON)) (0.75 Ω typ). 5. −3 dB Bandwidth > 200 MHz. Because of the advanced submicron process, −3 dB bandwidth of greater than 200 MHz can be achieved. 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. 14 ns Switching Times. The ADG779 operates from a single supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices, Inc. The ADG779 is available in a 6-lead SC70 package. Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved. ADG779 TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions..............................6 Applications....................................................................................... 1 Terminology .......................................................................................7 Functional Block Diagram .............................................................. 1 Typical Performance Characteristics ..............................................8 General Description ......................................................................... 1 Test Circuits..................................................................................... 10 Product Highlights ........................................................................... 1 Outline Dimensions ....................................................................... 12 Revision History ............................................................................... 2 Ordering Guide .......................................................................... 12 Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 5 ESD Caution.................................................................................. 5 REVISION HISTORY 10/05—Rev. 0 to Rev. A Updated Format..................................................................Universal Changes to Table 1............................................................................ 3 Changes to Table 2............................................................................ 4 Changes to Table 3............................................................................ 5 Changes to Terminology Section.................................................... 7 Changes to Ordering Guide .......................................................... 12 7/01—Revision 0: Initial Version Rev. A | Page 2 of 12 ADG779 SPECIFICATIONS VDD = 5 V ± 10%, GND = 0 V 1 Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (ΔRON) 25°C B Version −40°C to +85°C 0 V to VDD 2.5 5 0.1 LEAKAGE CURRENTS 2 Source Off Leakage IS (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 1.2 ±0.05 ±0.05 nA typ nA typ 2.4 0.8 V min V max μA typ μA max VIN = VINL or VINH ±0.1 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ RL = 300 Ω, CL = 35 pF VS = 3 V, see Figure 15 RL = 300 Ω, CL = 35 pF VS = 3 V, see Figure 15 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 3 V, see Figure 16 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18 RL = 50 Ω, CL = 5 pF, see Figure 19 f = 1 MHz f = 1 MHz VDD = 5.5 V Digital Inputs = 0 V or 5 V 6 DYNAMIC CHARACTERISTICS2 tON 0.75 ±0.01 ±0.01 0.005 14 20 tOFF 3 Break-Before-Make Time Delay, tD 8 Off Isolation −67 −87 −62 −82 200 7 27 6 1 Channel-to-Channel Crosstalk Bandwidth –3 dB CS (Off ) CD, CS (On) POWER REQUIREMENTS IDD 0.001 1.0 1 2 Test Conditions/Comments V Ω typ Ω max Ω typ Ω max Ω typ Ω max 0.8 On-Resistance Flatness (RFLAT (ON)) Unit Temperature range is B Version, −40°C to +85°C. Guaranteed by design, not subject to production test. Rev. A | Page 3 of 12 μA typ μA max VS = 0 V to VDD, IS = −10 mA, see Figure 12 VS = 0 V to VDD, IS = −10 mA VS = 0 V to VDD, IS = −10 mA VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V, see Figure 13 VS = VD = 1 V, or VS = VD = 4.5 V, see Figure 14 ADG779 VDD = 3 V ± 10%, GND = 0 V 1 Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On-Resistance Match Between Channels (ΔRON) 25°C 6 B Version −40°C to +85°C 0 V to VDD 7 10 0.1 0.8 On-Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS 2 Source Off Leakage IS (Off ) Channel On Leakage ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH DYNAMIC CHARACTERISTICS2 tON 2.5 ±0.01 ±0.01 8 Off Isolation –67 –87 –62 –82 200 7 27 μA typ μA max VIN = VINL or VINH ±0.1 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ dB typ dB typ MHz typ pF typ pF typ RL = 300 Ω, CL = 35 pF VS = 2 V, see Figure 15 RL = 300 Ω, CL = 35 pF VS = 2 V, see Figure 15 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 2 V, see Figure 16 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18 RL = 50 Ω, CL = 5 pF, see Figure 19 f = 1 MHz f = 1 MHz VDD = 3.3 V Digital Inputs = 0 V or 3 V 1 Bandwidth −3 dB CS (Off ) CD, CS (On) POWER REQUIREMENTS IDD 0.001 1.0 1 2 VS = 0 V to VDD, IS = –10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V, see Figure 13 VS = VD = 1 V, or VS = VD = 3 V, see Figure 14 V min V max 7 Channel-to-Channel Crosstalk VS = 0 V to VDD, IS = –10 mA 2.0 0.8 24 Break-Before-Make Time Delay, tD VS = 0 V to VDD, IS = –10 mA, see Figure 12 nA typ nA typ 16 4 V Ω typ Ω max Ω typ Ω max Ω typ Test Conditions/Comments ±0.05 ±0.05 0.005 tOFF Unit Temperature range is B Version, −40°C to +85°C. Guaranteed by design, not subject to production test. Rev. A | Page 4 of 12 μA typ μA max ADG779 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter VDD to GND Analog, Digital Inputs 1 Peak Current, S or D Continuous Current, S or D Operating Temperature Range Industrial (B Version) Storage Temperature Range Junction Temperature SC70 Package, Power Dissipation θJA Thermal Impedance θJC Thermal Impedance Lead Temperature, Soldering Vapor Phase (60 sec) Infrared (15 sec) Reflow Soldering (Pb-free) Peak Temperature Time at Peak Temperature 1 Rating −0.3 V to +7 V −0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 100 mA (pulsed at 1 ms, 10% duty cycle max) 30 mA −40°C to +85°C −65°C to +150°C 150°C 315 mW 332°C/W 120°C/W Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 4. Truth Table ADG779 IN 0 1 Switch S1 On Off 215°C 220°C 260 (+0/−5)°C 10 sec to 40 sec Overvoltages at IN, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. A | Page 5 of 12 Switch S2 Off On ADG779 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN 1 6 S2 VDD 2 5 D TOP VIEW (Not to Scale) GND 3 4 S1 Figure 2. Pin Configuration Table 5. Pin Function Descriptions Pin No. 1 2 3 4 5 6 Mnemonic IN VDD GND S1 D S2 Description Logic Control Input. Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. Can be an input or an output. Drain Terminal. Can be an input or an output. Source Terminal. Can be an input or an output. Rev. A | Page 6 of 12 02491-002 ADG779 ADG779 TERMINOLOGY VDD Most positive power supply potential. CD (Off) Off switch drain capacitance. Measured with reference to ground. IDD Positive supply current. CD, CS (On) On switch capacitance. Measured with reference to ground. GND Ground (0 V) reference. CIN Digital input capacitance. S Source terminal. Can be an input or an output. tON Delay time between the 50% and 90% points of the digital input and switch on condition. D Drain terminal. Can be an input or an output. tOFF Delay time between the 50% and 90% points of the digital input and switch off condition. IN Logic control input. VD (VS) Analog voltage on drain (D) and source (S) terminals. tBBM On or off time measured between the 80% points of both switches when switching from one to another. RON Ohmic resistance between the D and S. RFLAT (ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured. ΔRON On-resistance mismatch between any two channels. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on/off switching. Off Isolation A measure of unwanted signal coupling through an off switch. IS (Off) Source leakage current with the switch off. Crosstalk A measure of unwanted signal that is coupled through from one channel to another because of parasitic capacitance. ID (Off) Drain leakage current with the switch off. −3 dB Bandwidth The frequency at which the output is attenuated by 3 dB. ID, IS (On) Channel leakage current with the switch on. On Response The frequency response of the on switch. VINL Maximum input voltage for Logic 0. Insertion Loss The loss due to the on resistance of the switch. VINH Minimum input voltage for Logic 1. THD + N The ratio of harmonic amplitudes plus noise of a signal to the fundamental. IINL (IINH) Input current of the digital input. CS (Off) Off switch source capacitance. Measured with reference to ground. Rev. A | Page 7 of 12 ADG779 TYPICAL PERFORMANCE CHARACTERISTICS 0.15 6.0 5.5 VDD = 2.7V VDD = 5V VD = 4.5V/1V VS = 1V/4.5V TA = 25°C 5.0 0.10 4.5 VDD = 4.5V VDD = 3V 3.5 CURRENT (nA) RON (Ω) 4.0 3.0 2.5 VDD = 5V 2.0 ID, IS (ON) 0.05 0 1.5 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD OR VS – DRAIN OR SOURCE VOLTAGE (V) –0.05 02491-003 0 Figure 3. On Resistance as a Function of VD (VS) Single Supplies 10 20 30 40 50 60 TEMPERATURE (°C) 70 80 90 Figure 6. Leakage Currents as a Function of Temperature 0.15 6.0 5.5 VDD = 3V VD = 3V/1V VS = 1V/3V VDD = 3V 5.0 +85°C 4.5 0.10 +25°C CURRENT (nA) 4.0 RON (Ω) 0 02491-006 IS (OFF) 0.5 –40°C 3.5 3.0 2.5 2.0 0.05 ID, IS (ON) 0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 VD OR VS – DRAIN OR SOURCE VOLTAGE (V) Figure 4. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V 0 10 20 30 40 50 60 TEMPERATURE (°C) 70 80 90 02491-007 IS (OFF) –0.05 02491-004 0 Figure 7. Leakage Currents as a Function of Temperature 10m 6.0 VDD = 5V VDD = 5V 5.5 1m 5.0 4.5 100µ ISUPPLY (A) 3.5 +85°C 3.0 2.5 +25°C 2.0 –40°C 10µ 1µ 100n 1.5 1.0 10n 0 1n 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VD OR VS – DRAIN OR SOURCE VOLTAGE (V) 5.0 Figure 5. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V 1 10 100 1k 10k 100k FREQUENCY (Hz) 1M 10M Figure 8. Supply Current vs. Input Switching Frequency Rev. A | Page 8 of 12 100M 02491-008 0.5 02491-005 RON (Ω) 4.0 ADG779 –30 –40 0 VDD = 5V, 3V VDD = 5V –60 ON RESPONSE (dB) OFF ISOLATION (dB) –50 –70 –80 –90 –100 –2 –4 –110 100k 1M 10M FREQUENCY (Hz) 100M –6 10k 02491-009 –130 10k Figure 9. Off Isolation vs. Frequency VDD = 5V, 3V –60 –70 –80 –90 –100 –110 –120 100k 1M 10M FREQUENCY (Hz) 100M 02491-010 CROSSTALK (dB) –50 –130 10k 1M 10M FREQUENCY (Hz) Figure 11. On Response vs. Frequency –30 –40 100k Figure 10. Crosstalk vs. Frequency Rev. A | Page 9 of 12 100M 02491-011 –120 ADG779 TEST CIRCUITS IDS V1 D A S D ID (OFF) A S VD VS 0.1µF Figure 14. On Leakage VDD VIN 50% 50% VDD RL 300Ω IN CL 35pF VOUT 90% 90% VOUT tON GND tOFF 02491-015 D S VS Figure 15. Switching Times S1 VS1 VDD VIN VDD D S2 VS2 RL2 300Ω IN VIN D2 CL2 35pF VOUT VOUT 50% 0V 50% 50% 0V tD GND Figure 16. Break-Before-Make Time Delay, tD Rev. A | Page 10 of 12 50% tD 02491-016 0.1µF A VD Figure 13. Off Leakage Figure 12. On Resistance ID (ON) VS 02491-013 RON = V1/IDS 02491-012 VS D 02491-014 IS (OFF) S ADG779 VDD 0.1µF 0.1µF NETWORK ANALYZER VDD S S VS D RL 50Ω OFF ISOLATION = 20 log VIN VOUT VS INSERTION LOSS = 20 log VDD 0.1µF VDD S1 S2 D 50Ω IN CHANNEL-TO-CHANNEL CROSSTALK = 20 log R 50Ω GND VOUT VS 02491-018 RL 50Ω Figure 18. Channel-to-Channel Crosstalk Rev. A | Page 11 of 12 VOUT VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 19. Bandwidth Figure 17. Off Isolation NETWORK ANALYZER RL 50Ω GND 02491-017 GND VOUT 02491-019 VIN VS 50Ω IN VS D VOUT NETWORK ANALYZER VDD 50Ω 50Ω IN VDD ADG779 OUTLINE DIMENSIONS 2.20 2.00 1.80 1.35 1.25 1.15 6 5 4 1 2 3 2.40 2.10 1.80 PIN 1 0.65 BSC 1.30 BSC 1.00 0.90 0.70 1.10 0.80 0.30 0.15 0.10 MAX 0.40 0.10 SEATING PLANE 0.22 0.08 0.46 0.36 0.26 0.10 COPLANARITY COMPLIANT TO JEDEC STANDARDS MO-203-AB Figure 20. 6-Lead Thin Shrink Small Outline Transistor Package [SC70] (KS-6) Dimensions shown in millimeters ORDERING GUIDE Model ADG779BKS-R2 ADG779BKS-REEL ADG779BKS-REEL7 ADG779BKSZ-R2 2 ADG779BKSZ-REEL2 ADG779BKSZ-REEL72 1 2 Temperature Range –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C Package Description 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) 6-Lead Thin Shrink Small Outline Transistor Package (SC70) Brand on these packages is limited to three characters due to space constraints. Z = Pb-free part. © 2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C02491–0–10/05(A) Rev. A | Page 12 of 12 Package Option KS-6 KS-6 KS-6 KS-6 KS-6 KS-6 Branding 1 SKB SKB SKB S0M S0M S0M