AD ADG839YKSZ

0.35 Ω CMOS 1.65 V to 3.6 V
Single SPDT Switch/2:1 MUX
ADG839
FEATURES
FUNCTIONAL BLOCK DIAGRAM
1.65 V to 3.6 V operation
Ultralow on resistance:
0.35 Ω typical
0.5 Ω max at 2.7 V supply
Excellent audio performance, ultralow distortion:
0.055 Ω typical
0.09 Ω max RON flatness
High current carrying capability:
300 mA continuous
500 mA peak current at 3.3 V
Automotive temperature range: –40°C to +125°C
Rail-to-rail switching operation
Typical power consumption (<0.1 µW)
ADG839
S2
D
S1
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
04449-001
IN
Figure 1.
APPLICATIONS
PRODUCT HIGHLIGHTS
Cellular phones
PDAs
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communication systems
1.
0.6 Ω over full temperature range of –40°C to +125°C.
2.
Compatible with 1.8 V CMOS logic.
3.
High current handling capability (300 mA continuous
current at 3.3 V).
4.
Low THD + N (0.01% typ).
5.
Tiny SC70 package.
GENERAL DESCRIPTION
The ADG839 is a low voltage CMOS device containing a singlepole, double-throw (SPDT) switch. This device offers ultralow
on resistance of less than 0.6 Ω over the full temperature range.
The ADG839 is fully specified for 1.8 V, 2.5 V, and 3.3 V supply
operation.
Table 1. ADG839 Truth Table
Logic
0
1
Switch 2 (S2)
Off
On
Switch 1 (S1)
On
Off
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG839 exhibits break-before-make switching action.
The ADG839 is available in a 6-lead SC70 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
ADG839
TABLE OF CONTENTS
Specifications—2.7 V to 3.6 V ........................................................ 3
Typical Performance Characteristics ..............................................8
Specifications—2.3 V to 2.7 V ........................................................ 4
Terminology .................................................................................... 11
Specifications—1.65 V to 1.95 V .................................................... 5
Test Circuits..................................................................................... 12
Absolute Maximum Ratings............................................................ 6
Outline Dimensions ....................................................................... 14
ESD Caution.................................................................................. 6
Ordering Guide .......................................................................... 14
Pin Configuration and Function Descriptions............................. 7
REVISION HISTORY
10/04—Initial Version: Revision 0
Rev. 0 | Page 2 of 16
ADG839
SPECIFICATIONS1—2.7 V TO 3.6 V
VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match between
Channels (∆RON)
On Resistance Flatness
(RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage IS (OFF)
Channel On Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
tOFF
Break-Before-Make Time Delay
(tBBM)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion
(THD + N)
Insertion Loss
−3 dB Bandwidth
CS (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
+25°C
−40°C to
+85°C
0 V to VDD
0.35
0.5
0.04
0.075
0.055
0.07
0.56
0.61
0.085
0.095
0.082
0.09
±0.2
±0.2
2
Unit
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
VDD = 2.7 V
VDD = 2.7 V, VS = 0 V to VDD, IS = 100 mA;
Figure 19
VDD = 2.7 V, VS = 0.9 V, IS = 100 mA
nA typ
nA typ
VDD = 2.7 V, VS = 0 V to VDD,
IS = 100 mA
VDD = 3.6 V
VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V; Figure 20
VS = VD = 0.6 V or 3.3 V; Figure 21
2
0.8
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
±0.1
70
−57
−57
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
0.013
%
RL = 50 Ω, CL = 35 pF
VS = 1.5 V/0 V; Figure 22
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 22
RL = 50 Ω, CL = 35 pF; Figure 23
VS1 = VS2 = 1.5 V;
VS = 1.5 V, RS = 0 Ω, CL = 1 nF; Figure 24
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
S1 −S2;
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p
−0.01
25
74
120
dB typ
MHz typ
pF typ
pF typ
0.005
3.2
12
16
6.5
8.5
5
18
19
9
9.5
1
0.003
1
1
−40°C to
+125°C
4
µA typ
µA max
Temperature range for the Y version is −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. 0 | Page 3 of 16
RL = 50 Ω, CL = 5 pF; Figure 27
RL = 50 Ω, CL = 5 pF; Figure 27
VDD = 3.6 V
Digital inputs = 0 V or 3.6 V
ADG839
SPECIFICATIONS1—2.3 V TO 2.7 V
VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted.
Table 3.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match between
Channels (∆RON)
On Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage IS (OFF)
Channel On Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
tOFF
Break-before-Make Time Delay (tBBM)
+25°C
−40°C to
+85°C
−40°C to
+125°C
0 V to VDD
0.35
0.5
0.04
0.075
0.045
0.55
0.6
0.085
0.095
0.13
0.13
±0.2
±0.2
Total Harmonic Distortion (THD + N)
Insertion Loss
–3 dB Bandwidth
CS (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
2
Test Conditions/Comments
VDD = 2.3 V, VS = 0 V to VDD,
IS = 100 mA; Figure 19
VDD = 2.3 V, VS = 0.95 V,
IS = 100 mA
VDD = 2.3 V, VS = 0 V to VDD,
IS = 100 mA
VDD = 2.7 V
VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; Figure 20
VS = VD = 0.6 V or 2.4 V; Figure 21
1.7
0.7
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
±0.1
60
−57
−57
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
0.021
−0.01
25
78
127
%
dB typ
MHz typ
pF typ
pF typ
RL = 50 Ω, CL = 35 pF
VS = 1.5 V/0 V; Figure 22
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 22
RL = 50 Ω, CL = 35 pF; Figure 23
VS1 = VS2 = 1.5 V;
VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 24
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
S1−S2;
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p
RL = 50 Ω, CL = 5 pF; Figure 27
RL = 50 Ω, CL = 5 pF; Figure 27
0.005
3.2
14.5
18
7.5
9.2
7
20
21
9.5
9.8
0.003
1
1
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA typ
1
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Unit
4
Temperature range for the Y version is −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. 0 | Page 4 of 16
µA typ
µA max
VDD = 2.7 V
Digital inputs = 0 V or 2.7 V
ADG839
SPECIFICATIONS1—1.65 V TO 1.95 V
VDD = 1.65 V ± 1.95 V, GND = 0 V, unless otherwise noted.
Table 4.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match between
Channels (∆RON)
On Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage IS (OFF)
+25°C
−40°C to
+85°C
−40°C to
+125°C
0 V to VDD
0.5
0.8
1.3
0.04
0.075
0.3
1.2
2.5
1.2
2.5
0.08
0.08
Unit
V
Ω typ
Ω max
Ω max
Ω typ
Ω max
Ω typ
±0.2
nA typ
Channel On Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
±0.2
nA typ
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON
3.2
V min
V max
VIN = VINL or VINH
±0.1
µA typ
µA max
pF typ
RL = 50 Ω, CL = 35 pF
VS = 1.5 Ω/0 V; Figure 22
RL = 50 Ω, CL = 35 pF
VS = 1.5 V; Figure 22
RL = 50 Ω, CL = 35 pF
VS1 = VS2 = 1 V; Figure 23
VS = 1 V, RS = 0 V, CL = 1 nF; Figure 24
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 25
S1 −S2;
RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26
RL = 32 Ω, f = 20 Hz to 20 kHz,
VS = 1 V p-p
RL = 50 Ω, CL = 5 pF; Figure 27
RL = 50 Ω, CL = 5 pF; Figure 27
VDD = 1.95 V
Digital inputs = 0 V or 1.95 V
Digital inputs = 0 V or 1.95 V
0.005
Break-before-Make Time Delay (tBBM)
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
50
−57
−57
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
Total Harmonic Distortion (THD + N)
0.033
%
−0.01
25
83
132
dB typ
MHz typ
pF typ
pF typ
30
31
10.5
10.7
1
Insertion Loss
–3 dB Bandwidth
CS (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
0.003
1
1
2
VDD = 1.8 V, VS = 0 V to VDD, IS = 100 mA;
Figure 19
VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
VDD = 1.65 V, VS = TBD, IS = 100 mA
IS = 100 mA
VDD = 1.65 V, VS = 0 V to VDD, IS = 100 mA
VDD = 1.95 V
VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
Figure 20
VS = VD = 0.6 V or 1.65 V; Figure 21
0.65 VDD
0.35 VDD
20
28
8
10.1
12
tOFF
Test Conditions/Comments
4
Temperature range for the Y version is −40°C to +125°C.
Guaranteed by design; not subject to production test.
Rev. 0 | Page 5 of 16
µA typ
µA max
ADG839
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 5.
Parameter
VDD to GND
Analog Inputs1
Digital Inputs
Peak Current, S or D
3.3 V Operation
2.5 V Operation
1.8 V Operation
Continuous Current, S or D
3.3 V Operation
2.5 V Operation
1.8 V Operation
Operating Temperature Range
Automotive (Y Version)
Storage Temperature Range
Junction Temperature
SC70 Package
θJA Thermal Impedance
Lead Temperature,
Soldering (10 seconds)
IR Reflow, Peak Temperature
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Rating
−0.3 V to +4.6 V
−0.3 V to VDD + 0.3 V
−0.3 V to 4.6 V or 10 mA,
whichever occurs first
500 mA
460 mA
420 mA (pulsed at 1 ms,
10% duty cycle max)
300 mA
275 mA
250 mA
−40°C to +125°C
−65°C to +150°C
150°C
332°C/W
120°C/W
300°C
220°C
___________________________________________________________
1
Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 6 of 16
ADG839
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
IN 1
6 S2
ADG839
5 D
TOP VIEW
GND 3 (Not to Scale) 4 S1
04449-002
VDD 2
Figure 2. Pin Configuration
Table 6. Pin Function Descriptions
Pin No.
1
2
3
4, 6
5
Mnemonic
IN
VDD
GND
S1, S2
D
Description
Logic control input.
Most positive power supply potential.
Ground (0 V) reference.
Source terminal. Can be an input or output.
Drain terminal. Can be an input or output.
For more information, refer to the Terminology section.
Rev. 0 | Page 7 of 16
ADG839
TYPICAL PERFORMANCE CHARACTERISTICS
0.40
0.50
VDD = 3.0V
0.45
0.35
VDD = 3.3V
+125°C
0.40
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
0.30
VDD = 3.6V
0.25
0.20
0.15
+85°C
0.35
+25°C
0.30
–40°C
0.25
0.20
0.15
0.10
0.10
0
0.5
1.0
1.5
2.0
VD, VS (V)
2.5
3.0
04449-025
TA = 25°C
0
VDD = 3.3V
04449-022
0.05
0.05
0
0
3.5
0.5
1.0
1.5
2.0
VD, VS (V)
2.5
3.0
Figure 6. On Resistance vs. VD (VS) for Different Temperature, VDD = 3.3 V
Figure 3. On Resistance vs. VD (VS) VDD = 3 V to 3.6 V
0.6
0.45
VDD = 2.3V
0.40
VDD = 2.5V
0.5
+125°C
+85°C
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
0.35
0.30
VDD = 2.7V
0.25
0.20
0.15
0.4
0.3
+25°C
–40°C
0.2
0.10
TA = 25°C
0
0
0.5
1.0
1.5
VD, VS (V)
2.0
VDD = 2.5V
0
0
2.5
0.5
1.0
1.5
VD, VS (V)
2.0
2.5
Figure 7. On Resistance vs. VD (VS) for Different Temperature, VDD = 2.5 V
Figure 4. On Resistance vs. VD (VS) VDD = 2.5 V ± 0.2 V
0.8
0.7
VDD = 1.65V
+125°C
0.7
0.6
+25°C
0.6
ON RESISTANCE (Ω)
VDD = 1.80V
0.5
0.4
VDD = 1.95V
0.3
0.2
TA = 25°C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VD, VS (V)
1.4
1.6
1.8
Figure 5. On Resistance vs. VD (VS) VDD = 1.8 V ± 0.15 V
+85°C
0.5
0.4
–40°C
0.3
0.2
0.1
04449-027
0.1
04449-024
ON RESISTANCE (Ω)
04449-026
04449-023
0.1
0.05
VDD = 1.8V
0
2.0
0
0.2
0.4
0.6
0.8
1.0
VD, VS (V)
1.2
1.4
1.6
1.8
Figure 8. On Resistance vs. VD (VS) for Different Temperature, VDD = 1.8 V
Rev. 0 | Page 8 of 16
ADG839
100
180
VDD = 3.3V
TA = 25°C
90
160
VDD = 3.3V
80
CHARGE INJECTION (pC)
140
CURRENT (nA)
70
ID, IS (ON)
60
50
40
30
20
120
100
VDD = 2.5V
80
60
VDD = 1.8V
40
–10
–40
–20
0
20
40
60
TEMPERATURE (°C)
80
100
04449-012
IS (OFF)
0
04449-015
10
20
0
0
120
0.5
Figure 9. Leakage Current vs. Temperature, VDD = 3.3 V
1.0
1.5
VD (V)
2.0
2.5
3.0
Figure 12. Charge Injection vs. Source Voltage
80
25
VDD = 2.5V
70
VDD = 1.8V
tON
20
60
ID, IS (ON)
40
30
VDD = 3.3V
10
20
10
tOFF
VDD = 1.8V
VDD = 2.5V
VDD = 3.3V
04449-013
5
0
IS (OFF)
–20
0
20
40
60
TEMPERATURE (°C)
80
100
0
–40
120
Figure 10. Leakage Current vs. Temperature, VDD = 2.5 V
20
40
60
TEMPERATURE (°C)
80
100
120
1
VDD = 1.8V
0
60
–1
ID, IS (ON)
–2
ON RESPONSE (dB)
50
40
30
20
10
TA = 25°C
VDD = 3.3V/2.5V/1.8V
–3
–4
–5
–6
–7
–8
–9
IS (OFF)
0
–10
04449-014
CURRENT (nA)
0
Figure 13. tON/tOFF Times vs. Temperature
70
–10
–40
–20
–20
0
20
40
60
TEMPERATURE (°C)
80
100
04449-017
–10
–40
VDD = 2.5V
15
04449-016
TIME (ns)
CURRENT (nA)
50
–11
–12
100
120
Figure 11. Leakage Current vs. Temperature, VDD = 1.8 V
1k
10k
100k
1M
FREQUENCY (Hz)
Figure 14. Bandwidth
Rev. 0 | Page 9 of 16
10M
100M
ADG839
0
0.05
TA = 25°C
VDD = 3.3V/2.5V/1.8V
TA = 25°C
32Ω LOAD
–20
VDD = 1.8V; V p-p = 1V
THD+N (%)
OFF ISOLATION (dB)
0.04
–40
–60
0.03
–80
VDD = 2.5V; V p-p = 2V
0.02
–100
1k
10k
100k
1M
FREQUENCY (Hz)
10M
100M
0.01
10
1G
Figure 15. Off Isolation vs. Frequency
1k
FREQUENCY (Hz)
10k
100k
Figure 17. Total Harmonic Distortion + Noise
0
0
TA = 25°C
VDD = 3.3V/2.5V/1.8V
TA = 25°C
VDD = 3.3V/2.5V/1.8V
–20
–40
–40
–60
–60
–80
–80
–100
–100
–120
100
1k
10k
100k
1M
FREQUENCY (Hz)
10M
100M
1G
–120
100
Figure 16. Crosstalk vs. Frequency
04449-021
PSRR (dB)
–20
04449-019
CROSS TALK (dB)
100
04449-020
04449-018
–120
100
VDD = 3.3V; V p-p = 3V
1k
10k
FREQUENCY (Hz)
Figure 18. AC PSRR
Rev. 0 | Page 10 of 16
100k
1M
ADG839
TERMINOLOGY
tON
Delay time between the 50% and the 90% points of the digital
input and switch on condition.
IDD
Positive supply current.
VD (VS)
Analog voltage on Terminals D and S.
tOFF
Delay time between the 50% and the 90% points of the digital
input and switch off condition.
RON
Ohmic resistance between D and S.
RFLAT (ON)
Flatness is defined as the difference between the maximum and
minimum value of on resistance as measured.
tBBM
On or off time measured between the 80% points of both
switches when switching from one to another.
∆RON
On resistance match between any two channels.
Charge Injection
A measure of the glitch impulse transferred from the digital
input to the analog output during on-off switching.
IS (OFF)
Source leakage current with the switch off.
Off Isolation
A measure of unwanted signal coupling through an off switch.
ID (OFF)
Drain leakage current with the switch off.
Crosstalk
A measure of unwanted signal which is coupled through from
one channel to another as a result of parasitic capacitance.
ID, IS (ON)
Channel leakage current with the switch on.
VINL
Maximum input voltage for Logic 0.
VINH
Minimum input voltage for Logic 1.
IINL (IINH)
Input current of the digital input.
CS (OFF)
Off switch source capacitance. Measured with reference to
ground.
CD (OFF)
Off switch drain capacitance. Measured with reference to
ground.
CD, CS (ON)
On switch capacitance. Measured with reference to ground.
−3 dB Bandwidth
The frequency at which the output is attenuated by 3 dB.
On Response
The frequency response of the on switch.
Insertion Loss
The attenuation between the input and output ports of the
switch when the switch is in the on condition, and is due to the
on resistance of the switch.
THD + N
The ratio of the harmonic amplitudes plus noise of a signal to
the fundamental.
PSRR
Power Supply Rejection Ratio. This is a measure of the coupling
of unwanted ac signals on the power supply to the switch
output when the supply is not decoupled.
CIN
Digital input capacitance.
Rev. 0 | Page 11 of 16
ADG839
TEST CIRCUITS
V
D
A
VS
ID (ON)
VD
Figure 19. On Resistance
S
NC
D
VD
Figure 20. Off Leakage
Figure 21. On Leakage
VDD
0.1µF
VIN
50%
50%
VIN
50%
50%
VDD
VOUT
D
CL
35pF
RL
50Ω
IN
VIN
90%
90%
VOUT
GND
tON
tOFF
04449-006
S2
S1
VS
Figure 22. Switching Times, tON, tOFF
VDD
0.1µF
VDD
VS
VIN
S2
S1
VOUT
D
VOUT
80%
RL
50Ω
IN
80%
CL
35pF
tBBM
VIN
tBBM
04449-007
GND
Figure 23. Break-before-Make Time Delay, tBBM
VDD
0.1µF
VIN (NORMALLY
CLOSED SWITCH)
VDD
S2
NC
D
S1
VOUT
ON
OFF
VIN (NORMALLY
OPEN SWITCH)
CL
1nF
IN
GND
VOUT
∆VOUT
QINJ = CL × ∆VOUT
Figure 24. Charge Injection
Rev. 0 | Page 12 of 16
04449-008
VS
A
04449-005
04449-003
IDS
VS
ID (OFF)
S
A
D
04449-004
IS (OFF)
S
ADG839
VDD
VDD
0.1µF
0.1µF
VDD
S1
NC
S2
VOUT
50Ω
50Ω
VDD
S1
RL
50Ω
D
S2
VS
R
50Ω
50Ω
D
RL
50Ω
VOUT
GND
OFF ISOLATION = 20 LOG
IN
VS
GND
04449-009
VIN
VOUT
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG
VS
Figure 25. Off Isolation
04449-010
IN
NETWORK
ANALYZER
NETWORK
ANALYZER
VOUT
VS
Figure 26. Channel-to-Channel Crosstalk
VDD
0.1µF
IN
S1
NETWORK
ANALYZER
NC
VDD
NETWORK
ANALYZER
50Ω
S2
VOUT
GND
INSERTION LOSS = 20 LOG
04449-011
RL
50Ω
VDD ± 50mV
VDD
VS
D
VIN
BIAS
TEE
50Ω
VS
VOUT
IN
S1
RL
50Ω
NC
D
S2
GND
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Figure 27. Bandwidth
Figure 27. PSRR
Rev. 0 | Page 13 of 16
VIN
NC
04449-028
VDD
ADG839
OUTLINE DIMENSIONS
2.00 BSC
6
5
4
1
2
3
2.10 BSC
1.25 BSC
PIN 1
0.65 BSC
1.30 BSC
1.00
0.90
0.70
0.10 MAX
1.10 MAX
0.22
0.08
0.30
0.15
SEATING
PLANE
8°
4°
0°
0.46
0.36
0.26
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203AB
Figure 28. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]
(KS-6)
Dimensions shown in millimeters
ORDERING GUIDE
Model
ADG839YKSZ-500RL72
ADG839YKSZ-REEL2
ADG839YKSZ-REEL72
1
2
Temperature Range
–40°C to +125°C
–40°C to +125°C
–40°C to +125°C
Package Description
6-Lead Thin Shrink Small Outline Transistor Package
6-Lead Thin Shrink Small Outline Transistor Package
6-Lead Thin Shrink Small Outline Transistor Package
Branding on this package is limited to three characters due to space constraints.
Z = Pb-free part.
Rev. 0 | Page 14 of 16
Package Option
KS-6
KS-6
KS-6
Branding1
SUA
SUA
SUA
ADG839
NOTES
Rev. 0 | Page 15 of 16
ADG839
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D04449–0–10/04(0)
Rev. 0 | Page 16 of 16