TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC595 / 595E v00.0805 Features The HMC595 / HMC595E is ideal for: Low Insertion Loss: 0.3 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets Isolation: 30 dB • WLAN, WiMAX & WiBro Positive Control: 0/+3V to 0/+10V • Automotive Telematics Ultra Small Package: SOT26 • Test Equipment Included in the HMC-DK005 Designer’s Kit Functional Diagram General Description TE Typical Applications The HMC595 & HMC595E are low-cost SPDT switches in 6-lead SOT26 packages for use in transmit/ receive applications which require very low distortion at high incident power levels. The device can control signals from DC to 3 GHz and is especially suited for Cellular/3G infrastructure, WiMAX and WiBro applications with only 0.3 dB typical insertion loss. The design provides a 3 watt power handling and +65 dBm third order intercept at +8 Volt bias. RF1 and RF2 are reflective shorts when “Off”. Control inputs A & B are compatible with CMOS and some TTL logic families. These products are form, fit and function replacements for HMC195 & HMC195E while offering superior electrical performance. SO LE 10 SWITCHES - SMT GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Electrical Specifi cations, B TA = +25° C, Vctl = 0/+5 Vdc (Unless Otherwise Stated), 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz O Insertion Loss Isolation DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz Input Power for 1dB Compression Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 GHz Input Third Order Intercept (Two-tone Input Power = +27 dBm Each Tone) Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 GHz Switching Characteristics 26 22 18 14 32 35 37 Typ. Max. Units 0.25 0.3 0.4 0.5 0.5 0.6 0.7 0.8 dB dB dB dB 30 26 24 18 dB dB dB dB 30 25 22 20 dB dB dB dB 35 38 39 dBm dBm dBm 47 64 65 dBm dBm dBm 80 120 ns ns DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 10 - 356 Min. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Isolation Between RFC and RF1/RF2 0 0 -0.5 -10 -1 +25C +85C -40C -1.5 -20 -30 -40 0 1 2 3 4 0 1 RF1 to RF2 Isolations 4 10 RF1 ON RF2 ON -30 -40 0 1 SO -20 2 3 RETURN LOSS (dB) 0 -10 -20 -30 -40 4 B Input P0.1dB vs. Vctl 0 1 3 4 3 4 Input P1dB vs. Vctl O 42 38 INPUT P1dB (dBm) 40 38 36 34 32 36 34 32 +8V +5V +3V 30 +8V +5V +3V 28 2 FREQUENCY (GHz) 40 30 +25C +85C -40C -10 FREQUENCY (GHz) INPUT P0.1dB (dBm) 3 Return Loss 0 42 2 FREQUENCY (GHz) LE FREQUENCY (GHz) SWITCHES - SMT -2 ISOLATION (dB) +25C +85C -40C TE ISOLATION (dB) INSERTION LOSS (dB) Insertion Loss 28 26 26 0 1 2 FREQUENCY (GHz) 3 4 0 1 2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 357 HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Input IP3 vs. Input Power @ 1900 MHz 70 65 65 60 +10V +8V +5V 55 50 45 27 28 29 30 31 32 33 27 10 Input Third Order Intercept Point 70 28 32 45 0 1 SO 50 2 3 0 -40 -0.6 -60 -0.8 -80 -100 -1 24 26 B -60 -0.8 -80 -100 32 34 INPUT POWER (dBm) 36 38 INSERTION LOSS (dB) O -0.6 30 34 36 0 F2 F3 -0.2 -20 -0.4 -40 -0.6 -60 -0.8 -80 HARMONICS (dBc) -40 28 32 0 HARMONICS (dBc) -0.4 26 30 2nd & 3rd Harmonics @ 900 MHz Vctl = +8 Volts -20 -1 28 INPUT POWER (dBm) 0 F2 F3 -20 -0.4 4 2nd & 3rd Harmonics @ 900 MHz Vctl = +5 Volts F2 F3 -0.2 FREQUENCY (GHz) -0.2 33 2nd & 3rd Harmonics @ 900 MHz Vctl = +3 Volts +10V +8V +5V +3V 55 35 INSERTION LOSS (dB) 31 HARMONICS (dBc) 60 40 10 - 358 30 0 65 0 29 TWO TONE INPUT POWER (dBm) (EACH TONE) LE TWO TONE INPUT POWER (dBm) (EACH TONE) INPUT IP3 (dBm) +10V +8V +5V 55 50 45 SWITCHES - SMT 60 TE INPUT IP3 (dBm) 70 INSERTION LOSS (dB) INPUT IP3 (dBm) Input IP3 vs. Input Power @ 900 MHz -100 -1 28 30 32 34 36 38 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 40 HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Input P1dB vs. Vctl 40 40 35 35 +8V +5V +3V 25 20 0.01 0.1 20 0.01 0.5 - 2.5 GHz 39 dBm 0.1 -0.2 to +12 Vdc Hot Switching Power Level Vctl = 0/+8V 39 dBm Channel Temperature 150 °C Continuous Pdiss ( T= + 85 °C) (derate 6 mW/°C above 85 °C) 0.38W Thermal Resistance 173 °C/W Control Voltages SO Control Voltage Range (A & B) State Bias Condition Low 0 to +0.2 Vdc @ 10 µA Typical High +3 Vdc @ 2µA Typical to +8 Vdc @ 40 µA Typical (± 0.2 Vdc) Truth Table -65 to +150 °C Control Input (Vctl) Operating Temperature -40 to +85 °C A B RFC to RF1 ESD Sensitivity Class 1A High Low Off On Low High On Off Storage Temperature DC Blocks are required at ports RFC, RF1 and RF2 B 1 FREQUENCY (GHz) LE FREQUENCY (GHz) Max. Input Power Vctl = 0/+8V +8V +5V +3V 25 1 Absolute Maximum Ratings 30 Signal Path State RFC to RF2 10 SWITCHES - SMT 30 TE INPUT P1dB (dBm) INPUT P0.1dB (dBm) Input P0.1dB vs. Vctl O ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 359 HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz TE Outline Drawing SO SWITCHES - SMT LE 10 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. B 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND O Package Information Part Number Package Body Material Lead Finish MSL Rating HMC595 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC595E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H595 XXXX [2] 595E XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 10 - 360 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Pin Descriptions Description 1, 3, 5 RF2, RF1, RFC This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required. 2 GND This pin must be connected to RF/DC ground. 4 B See truth table and control voltage table. 6 A See truth table and control voltage table. LE 10 O B SO Typical Application Circuit Interface Schematic SWITCHES - SMT Function TE Pin Number Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 361 HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz TE Evaluation Circuit Board B SO SWITCHES - SMT LE 10 List of Materials for Evaluation PCB 101675 [1] Description O Item J1 - J3 PCB Mount SMA RF Connector J4 - J6 DC Pin C1 - C3 330 pF capacitor, 0402 Pkg. U1 HMC595 / HMC595E T/R Switch PCB [2] 101659 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 10 - 362 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz SWITCHES - SMT 10 O B SO LE TE Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 363