29F0408 32 Megabit (4M x 8-Bit) Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect · - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte page in 250 µ s and an erase operation can be performed in 2 ms on an 8K-byte block. Data within a page can be read out at 50 ns cycle time per byte. The on-chip write controller automates all program and erase functions, including pulse repetition, where required, and internal verify and margining of data. Even write-intensive systems can take advantage of the 29F0408’s extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications. The spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The 29F0408 is an optimum solution for large non-volatile storage applications such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility. · - SEUTH: = 37 MeV/mg/cm2 - SEU saturated cross section: 2E-6 cm2/bit • Organization: - Memory cell array: (4M + 128k) bit x 8bit - Data register: (512 + 16) bit x 8bit • Automatic program and erase - Page program: (512 + 16) Byte - Block erase: (8K + 256) Byte - Status register • 528-Byte page read operation - Random access: 10 µ s (max) - Serial page access: 50 ns (min) • Fast write cycle time - Program time: 250 µ s (typ) - Block erase time: 2 ms (typ) • Command/address/data multiplexed I/O port • Hardware data protection - Program/erase lockout during power transitions • Reliable CMOS floating-gate technology - Endurance: 1,000,000 program/erase cycles - Data retention: 10 years • Command register operation • 44 pin flat package Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. Capable of surviving in space environments, the 29F0408 is ideal for satellite, spacecraft, and space probe missions. It is available with packaging and screening up to Class S. 11.08.02 Rev 2 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com All data sheets are subject to change without notice 1 ©2002 Maxwell Technologies All rights reserved. Memory Logic Diagram 29F0408 32 Megabit (4M x 8-Bit) Flash Memory TABLE 1. PINOUT DESCRIPTION PIN SYMBOL DESCRIPTION 2 Command Latch Enable (CLE) The CLE input controls the path activation for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal. 3 Address Latch Enable The ALE input controls the path activation for address and input data to the internal (ALE) address/data register. Addresses are latched on the rising edge or WE with ALE high, and input data is latched when ALE is low. 43 Chip Enable (CE) The CE input is the device selection control. When CE goes high during a read operation, the device is returned to standby mode. However, when the device is in the busy state during program or erase, CE high is ignored, and does not return the device to standby mode. 4 Write Enable (WE) The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse. 42 Read Enable (RE) The RE inputs is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one. 40 Spare Area Enable (SE) The SE input controls the spare area selection when SE is high, the device is deselected the spare area during Read1, Sequential data input and page Program. 18-21, 24-27 I/O Port: I/O0 ~ I/O7 The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to High-Z when the chip is deselected or when the outputs are disabled. 5 Write Protect (WP) The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low. 41 Read/Busy (R/B) The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to High-Z condition when the chip is deselected or when outputs are disabled. 6-17, 28-39 NC Not Connected 1, 22 VSS Ground 44 VCC Supply Voltage 23 VCCQ Output Buffer Voltage 11.08.02 Rev 2 All data sheets are subject to change without notice 2 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory TABLE 2. 29F0408 ABSOLUTE MAXIMUM RATINGS 1,2 PARAMETER SYMBOL MIN MAX UNIT VIN -0.6 7.0 V Operating Temperature TBIAS -40 125 °C Storage temperature TSTG -65 150 °C IOS -- 5 mA Voltage on any pin relative to VSS Short circuit output current 1. Minimum DC voltage is -0.3 V on input/output pins. During transitions, this level may undershoot to -2.0 V for periods < 30 ns. Maximum DC voltage on input/output pins is VCC + 0.3 V which, during transitions, may overshoot to VCC + 2.0 V for periods < 20 ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum ratings conditions for extended periods may affect reliability. TABLE 3. 29F0408 RECOMMENDED OPERATING CONDITIONS (VOLTAGE REFERENCE TO GND, TA = -40 TO 125° C) PARAMETER SYMBOL MIN TYP MAX UNIT Supply voltage VCC 4.5 5.0 5.5 V Supply voltage VSS 0 0 0 V Input High Voltage VIH 2.4 -- VCC ±0.5 V Input Low Voltage VIL -0.3 -- 0.8 V TABLE 4. DELTA LIMITS PARAMTER CONDITION ICC1 ±10% ISB1 ±10% ISB2 ±10% TABLE 5. 29F0408 AC TEST CONDITION (VCC = 5 V ± 10%, TA = -40 TO 125° C, UNLESS OTHERWISE NOTED) PARAMETER Input pulse levels Input rise times Input and output timing levels 11.08.02 Rev 2 MIN MAX UNIT 0.4 2.6 V -- 5.0 ns 0.8 2.0 V All data sheets are subject to change without notice 3 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory TABLE 6. 29F0408 DC AND OPERATING CHARACTERISTICS (VCC = 5 V ± 10%, TA = -40 TO 125° C, UNLESS OTHERWISE NOTED) PARAMETER Operating current SYMBOL TEST CONDITIONS tCYCLE = 50 ns CE = VIL, IOUT = 0 mA SUBGROUPS MIN TYP MAX UNIT 1, 2, 3 -- 15 30 mA Sequential read ICC1 Program ICC2 1, 2, 3 -- 15 30 Erase ICC3 1, 2, 3 -- 25 40 Stand-by-current (TTL) ISB1 CE = VIH, WP = SE = 0V/VCC 1, 2, 3 -- -- 1 mA Stand-by current (CMOS) ISB2 CE = VCC - 0.2, WP = SE = 0V/VCC 1, 2, 3 -- 10 100 uA Input leakage current ILI VIN = 0 to 5.5 V 1, 2, 3 -10 -- 10 uA Output leakage current ILO VOUT = 0 to 5.5 V 1, 2, 3 -10 -- 10 uA Input high voltage, all inputs VIH 1, 2, 3 2.0 -- -- V Input low voltage, all inputs VIL 1, 2, 3 -- -- 0.8 V Output high voltage level VOH IOH = -400 µ A 1, 2, 3 2.4 -- -- V Output low voltage level VOL IOL = 2.1 mA 1, 2, 3 -- -- 0.4 V Outuput low current (R/B) IOL (R/B) VOL = 0.4 V 1, 2, 3 8 10 -- mA TABLE 7. 29F0408 CAPACITANCE 1 SYMBOL TEST CONDITION MIN MAX UNIT Input/Output capacitance CI/O VIL = 0V -- 10 pF Input capacitance CIN VIN = 0V -- 10 pF PARAMETER 1. Capacitance Guarenteed by design. TABLE 8. 29F0408 MODE SELECTION CLE ALE CE H L L WE RE SE WP L H X X H L H X X H L L H X H L H L H X H L L L H L/H 1 H 11.08.02 Rev 2 MODE Read Mode Command Input Address Input (3 Clock) Write Mode Command Input Address Input (3 Clock) Data Input All data sheets are subject to change without notice 4 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory TABLE 8. 29F0408 MODE SELECTION CLE ALE CE WE L L L H L L L H RE SE WP MODE L/H 1 X Sequential Read & Data Output H L/H 1 X During Read (Busy) 1 H During Program (Busy) X X X X X L/H X X X X X X H During Erase (Busy) X X X X L Write Protect X 0V/VCC3 0V/VCC3 X X X 2 X H X Stand-by 1. When SE is high, spare area is deselected. 2. X can be VIL or VIH. 3. WP should be biased to CMOS high or CMOS low for standby. TABLE 9. 29F0408 PROGRAM/ERASE CHARACTERISTICS (VCC = 5 V ± 10%, TA =-40 TO +125C, UNLESS OTHERWISE NOTED) PARAMETER SYMBOL MIN TYP MAX UNIT Program time tPROG -- 0.25 1.5 ms Number of partial program cycles in the same page NOP -- -- 10 cycles Block erase time tBERS -- 2 10 ms 11.08.02 Rev 2 All data sheets are subject to change without notice 5 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory TABLE 10. 29F0408 AC TIMING CHARACTERISTICS FOR COMMAND/ADDRESS/DATA INPUT (VCC = 5 V ± 10%, TA =-40 TO +125 C, UNLESS OTHERWISE NOTED) PARAMETER SYMBOL SUBGROUPS MIN MAX UNIT CLE set-up time tCLS 9, 10, 11 0 -- ns CLE hold time tCLH 9, 10, 11 10 -- ns CE setup time tCS 9, 10, 11 0 -- ns CE hold time tCH 9, 10, 11 10 -- ns WE pulse width tWP 9, 10, 11 25 -- ns ALE setup time tALS 9, 10, 11 0 -- ns ALE hold time tALH 9, 10, 11 10 -- ns Data setup time tDS 9, 10, 11 20 -- ns Data hold time tDH 9, 10, 11 10 -- ns Write cycle time tWC 9, 10, 11 50 -- ns WE high hold time tWH 9, 10, 11 15 -- ns TABLE 11. 29F0408 AC CHARACTERISTICS FOR OPERATION (VCC = 5 V ± 10%, TA = -40 TO +125° C, UNLESS OTHERWISE NOTED) PARAMETER SYMBOL SUBGROUPS MIN MAX UNIT tR 9, 10, 11 -- 10 µs ALE to RE delay (read ID) tAR1 9, 10, 11 150 -- ns ALE to RE delay (read cycle) tAR2 9, 10, 11 50 -- ns CE to RE delay (ID read) tCR 9, 10, 11 100 -- ns Ready to RE low1 tRR 9, 10, 11 20 -- ns RE pulse width tRP 9, 10, 11 30 -- ns WE high to busy tWR 9, 10, 11 -- 100 ns Read cycle time tRC 9, 10, 11 50 -- ns RE access time tREA 9, 10, 11 -- 35 ns RE high to output Hi-Z tRHZ 9, 10, 11 15 30 ns CE high to output Hi-Z tCHZ 9, 10, 11 -- 20 ns RE high hold time tREH 9, 10, 11 15 -- ns Output Hi-Z to RE low tIR 9, 10, 11 0 -- ns Last RE high to busy (at sequential read) tRB 9, 10, 11 -- 100 ns CE high to ready (in case of interception by CE at read) 2 tCRY 9, 10, 11 -- 50 + tr (R/B) ns CE high hold time (at the last serial read) 4 tCEH 9, 10, 11 100 -- ns RE low to status output tRSTO 9, 10, 11 -- 35 ns Data transfer from cell to register 3 11.08.02 Rev 2 All data sheets are subject to change without notice 6 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory TABLE 11. 29F0408 AC CHARACTERISTICS FOR OPERATION (VCC = 5 V ± 10%, TA = -40 TO +125° C, UNLESS OTHERWISE NOTED) PARAMETER SYMBOL SUBGROUPS MIN MAX UNIT CE low to status output tCSTO 9, 10, 11 -- 45 ns RE high to WE low RHWY 9, 10, 11 0 -- ns WE high to RE low tWHR 9, 10, 11 60 -- ns tREADID 9, 10, 11 -- 35 ns tRST 9, 10, 11 -- 5/10/500 µs RE access time (read ID) Device resetting time (read/program/erase/after erase suspend) 1. Not Tested 2. If CE goes high within 30 ns after the rising edge of the last RE, R/B will not return to VOL. 3. The time to Ready depends on the value of the pull-up resistor tied to R/B pin. 4. To break the sequential read cycle, CE must be held high for longer than tCEH. TABLE 12. 29F0408 VALID BLOCK 1,2 PARAMETER Valid Block Number SYMBOL MIN TYP MAX UNIT NVB 502 508 512 Blocks 1. The device may include valid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid blocks for program and erase. During its lifetime of 10 years and/or 1 million program/erase cycles, the minimum number of valid blocks are guaranteed though its initial number could be reduced. (Refer to following technical note) 2. The 1st block, which is placed on the 00h block address, is guaranteed to be a valid block. NAND FLASH TECHNICAL NOTES Invalid Block(s) Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by the manufacturer. Typically, an invalid block will contain a single bad bit. The information regarding the invalid block(s) is called as the invalid block information. The invalid block information is written to the 1st or the 2nd page of the invalid block(s) with 00h data. Devices with invalid block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block of the NAND Flash, however, is fully guaranteed to be a valid block. Identifying Invalid Block(s) All device locations are erased (FFh) except locations where the invalid block information is written prior to shipping. Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original invalid 11.08.02 Rev 2 All data sheets are subject to change without notice 7 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory block information and create the invalid block table via the following suggested flow chart (Figure 1). Any intentional erasure of the original block information is prohibited. FIGURE 1. FLOW CHART TO CREATE INVALID BLOCK TABLE Error in write or read operation Over its lifetime, the additional invalid blocks may occur. Through the tight process control and intensive testing, additional block failure rate is minimized which is projected below 0.1% until 1 million program/erase cycles. Refer to the qualification report for the actual data. The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks. FAILURE MODE Write Read DETECTION AND COUNTERMEASURE Erase failure Status read after erase Æ Block replacement Program failure Status read after program Æ Block replacement Read back (verify after program) Æ Block replacement or ECC correction Single bit failure Verify ECC Æ ECC correction ECC: Error Correcting Code Æ Hamming Code, etc. Example. 1-bit correction and 2-bit detection 11.08.02 Rev 2 All data sheets are subject to change without notice 8 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 2. PROGRAM FLOW CHART 11.08.02 Rev 2 All data sheets are subject to change without notice 9 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 3. ERASE FLOW CHART 11.08.02 Rev 2 All data sheets are subject to change without notice 10 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 4. READ FLOW CHART FIGURE 5. BLOCK REPLACEMENT 11.08.02 Rev 2 All data sheets are subject to change without notice 11 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory Pointer Operation: The 29F0408 has three modes to set the destination of the pointer. The pointer is set to “A” area by the “00h” command, to “B” area by the “01h” command, and to “C” area by the “50h” command. The Destination Pointer Table shows the destination of the pointer, and the block diagram shows the diagram of its operation. TABLE 12. DESTINATION OF POINTER TABLE FIGURE 6. BLOCK DIAGRAM OF POINTER OPERATION 11.08.02 Rev 2 All data sheets are subject to change without notice 12 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 7. EXAMPLES OF PROGRAMMING WITH SUCCESSIVE POINTER OPERATION TABLE 13. POINT STATUS AFTER EACH OPERATION System Interface Using CE don’t-care. For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal 528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading would provide significant savings in power consumption. 11.08.02 Rev 2 All data sheets are subject to change without notice 13 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 8. PROGRAM OPERATION WITH CE DON’T CARE Timing requirements: If CE is is exerted high during data-loading, tCS must be minimum 10ns and tWC must be increased accordingly. Timing requirements: If CE is is exerted high during sequentialdata-reading, the falling edge of CE to valid data(tCEA) must be kept greater than 45ns. FIGURE 9. READ OPERATION WITH CE DON’T CARE 11.08.02 Rev 2 All data sheets are subject to change without notice 14 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 10. COMMAND LATCH CYCLE FIGURE 11. ADDRESS LATCH CYCLE 11.08.02 Rev 2 All data sheets are subject to change without notice 15 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 12. INPUT DATA LATCH CYCLE FIGURE 13. SEQUENTIAL OUT CYCLE AFTER READ (CLE = L, WE = H, ALE = L) 11.08.02 Rev 2 All data sheets are subject to change without notice 16 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 14. STATUS READ CYCLE FIGURE 15. READ1 OPERATION (READ ONE PAGE) 11.08.02 Rev 2 All data sheets are subject to change without notice 17 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 16. READ1 OPERATION (INTERCEPTED BY CE) FIGURE 17. READ2 OPERATION (READ ONE PAGE) 11.08.02 Rev 2 All data sheets are subject to change without notice 18 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 18. SEQUENTIAL ROW READ OPERATION FIGURE 19. PAGE PROGRAM OPERATION 11.08.02 Rev 2 All data sheets are subject to change without notice 19 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 20. BLOCK ERASE OPERATION (ERASE ONE BLOCK) FIGURE 21. MANUFACTURE & DEVICE ID READ OPERATION 11.08.02 Rev 2 All data sheets are subject to change without notice 20 ©2002 Maxwell Technologies All rights reserved. 32 Megabit (4M x 8-Bit) Flash Memory 29F0408 DEVICE OPERATION PAGE READ Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command register along with three address cycles. Once the command is latched, it does not need to be written for the following page read operation. Three types of operations are available : random read, serial page read and sequential read. The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred to the data registers in less than 10 ms(tR). The CPU can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 50 ns cycle time by sequentially pulsing RE with CE staying low. High to low transitions of the RE clock output the data starting from the selected column address up to the last column address(column 511 or 527 depending on state of SE pin). After the data of last column address is clocked out, the next page is automatically selected for sequential read. Waiting 10 µ s again allows for reading of the selected page. The sequential read operation is terminated by bringing CE high. The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes 512 to 527 may be selectively accessed by writing the Read2 command with SE pin low. Toggling SE during operation is prohibited. Addresses A0 to A3 set the starting address of the spare area while addresses A4 to A7 are ignored. Unless the operation is aborted, the page address is automatically incremented for sequential read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1 command (00h/01h) is needed to move the pointer back to the main area. Figures 22 thru 25 show typical sequence and timings for each read operation. 11.08.02 Rev 2 All data sheets are subject to change without notice 21 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 22. READ1 OPERATION 11.08.02 Rev 2 All data sheets are subject to change without notice 22 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 23. READ2 OPERATION 11.08.02 Rev 2 All data sheets are subject to change without notice 23 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 24. SEQUENTIAL ROW READ1 OPERATION FIGURE 25. SEQUENTIAL READ2 OPERATION (SE = FIXED LOW) 11.08.02 Rev 2 All data sheets are subject to change without notice 24 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory PAGE PROGRAM The device is programmed basically on a page basis, but it does allow multiple partial page programming of a byte or consecutive bytes up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed ten. The addressing may be done in any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be loaded into the page register, followed by a nonvolatile programming period where the loaded data is programmed into the appropriate cell. Serial data loading can be started from 2nd half array. About the pointer operation, please refer to the attached technical notes.The serial data loading period begins by inputting the Serial Data Input command (80H), followed by the three cycle address input and then serial data loading. The bytes other than those to be programmed do not need to be loaded. The Page Program confirm command (10h) initiates the programming process. Writing 10h alone without perviously entering the serial data will not initiate the programming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be entered, with RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the R/B output, or the Status bit (I/O6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit (I/O0) may be checked (Figure 26). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the command register. FIGURE 26. PROGRAM & READ STATUS OPERATION 11.08.02 Rev 2 All data sheets are subject to change without notice 25 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory BLOCK ERASE The Erase operation can erase on a block (8K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase Setup command (60h). Only address A13 to A21 is valid while A9 to A12 is ignored. The addresses of the block to be erased to FFh. The Erase Confirm command (D0h) following the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution ensures that memory contents are not accidentally erased due to external noise conditions. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the erase operation is completed, the Write Status Bit (I/O0) may be checked. Figure 27 details the sequence. FIGURE 27. BLOCK ERASE OPERATION READ STATUS The device contains a Status Register which may be read to find out whether program or erase operation is complete, and whether the program or erase operation completed successfully. After writing 70h command to the command register, a read cycle outputs the contents of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to table 14 for specific Status Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, a read command (00h or 50h) should be given before sequential page read cycle. 11.08.02 Rev 2 All data sheets are subject to change without notice 26 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory TABLE 14. READ STATUS REGISTER DEFINITION READ ID The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Two read cycles sequentially output the manufacture code(ECh), and the device code (E3h) respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 28 shows the operation sequence. FIGURE 28. READ ID OPERATION 11.08.02 Rev 2 All data sheets are subject to change without notice 27 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory RESET The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random read, program or erase modes, the reset operation will abort these operation. The contents of memory cells being altered are no longer valid, as the data will be partially programmed or erased. Internal address registers are cleared to "0"s and data registers to "1"s. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high. Refer to table 15 for device status after reset operation. If the device is already in reset state a new reset command will not be accepted to by the command register. The R/B pin transitions to low for tRST after the Reset command is written. Reset command is not necessary for normal operation. Refer to Figure 29 below. FIGURE 29. RESET OPERATION TABLE 15. DEVICE STATUS DATA PROTECTION The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever VCC is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down as shown in Figure 30. The two step command sequence for program/erase provides additional software protection. 11.08.02 Rev 2 All data sheets are subject to change without notice 28 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 30. AC WAVEFORMS FOR POWER TRANSITION READY/BUSY The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is begin after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper operation and the value may be calculated by following equation. 11.08.02 Rev 2 All data sheets are subject to change without notice 29 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory FIGURE 31. READY/BUSY 11.08.02 Rev 2 All data sheets are subject to change without notice 30 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory 44 PIN RAD-PAK® FLAT PACKAGE DIMENSION SYMBOL MIN NOM MAX A 0.132 0.147 0.160 b 0.015 0.017 0.019 c 0.006 0.008 0.10 D 1.188 1.200 1.212 E 0.668 0.675 0.682 E1 -- -- 0.705 E2 0.450 0.455 0.460 E3 0.098 0.110 0.122 e 0.050 BSC L 0.350 0.370 0.398 Q 0.022 0.027 0.032 S1 0.005 -- -- N 44 Note: All dimensions in inches 11.08.02 Rev 2 All data sheets are subject to change without notice 31 ©2002 Maxwell Technologies All rights reserved. 32 Megabit (4M x 8-Bit) Flash Memory 29F0408 Important Notice: These data sheets are created using the chip manufacturer’s published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. 11.08.02 Rev 2 All data sheets are subject to change without notice 32 ©2002 Maxwell Technologies All rights reserved. 29F0408 32 Megabit (4M x 8-Bit) Flash Memory Product Ordering Options Model Number 29F0408 RP F X Option Details Feature Screening Flow Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -40°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Package F = Flat Pack Radiation Feature RP = RAD-PAK® package Base Product Nomenclature 32 Megabit (4M x 8-Bit) Flash Memory 11.08.02 Rev 2 All data sheets are subject to change without notice 33 ©2002 Maxwell Technologies All rights reserved.