KM29U64000T, KM29U64000IT
FLASH MEMORY
Document Title
8M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
Draft Date
Remark
0.0
Initial issue.
April 10th 1998
Preliminary
1.0
Data Sheet, 1998
July 14th 1998
Final
1.1
Data Sheet. 1999
April 10th 1999
Final
1) Added CE don’t care mode during the data-loading and reading
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the
SAMSUNG branch office near you.
1
KM29U64000T, KM29U64000IT
FLASH MEMORY
8M x 8 Bit NAND Flash Memory
FEATURES
GENERAL DESCRIPTION
• Voltage Supply : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (8M + 256K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
• Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (8K + 256)Byte
• 528-Byte Page Read Operation
- Random Access : 7µs(Max.)
- Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
- Program time : 200µs(typ.)
- Block Erase time : 2ms(typ.)
• Command/Address/Data Multiplexed I/O port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
• Command Register Operation
• 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)
The KM29U64000 is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. Its NAND cell provides the
most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typically 200µs and an erase operation can be performed in typically 2ms on an 8K-byte block. Data in the page can be read
out at 50ns cycle time per byte. The I/O pins serve as the ports
for address and data input/output as well as command inputs.
The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the KM29U64000′s extended
reliability of 1,000,000 program/erase cycles by providing either
ECC(Error Correcting Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass
storage applications and also the spare 16 bytes of a page
combined with the other 512 bytes can be utilized by systemlevel ECC.
The KM29U64000 is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applications requiring non-volatility.
PIN CONFIGURATION
PIN DESCRIPTION
VSS
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Pin Name
VCC
CE
RE
R/B
SE
N.C
N.C
N.C
N.C
N.C
I/O0 ~ I/O7
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
VCCQ
CLE
Command Latch Enable
ALE
Address Latch Enable
CE
Chip Enable
RE
Read Enable
WE
Write Enable
WP
Write Protect
SE
Spare area Enable
R/B
Ready/Busy output
VCC
Power(2.7V ~ 3.6V)
VCCQ
44(40) TSOP (II)
STANDARD TYPE
NOTE : Connect all VCC, VCCQ and VSS pins of each device to power supply outputs.
Do not leave V CC or VSS disconnected.
2
Pin Function
Data Input/Outputs
Output Buffer Power(2.7V~3.6V or 5.0V)
VSS
Ground
N.C
No Connection
KM29U64000T, KM29U64000IT
FLASH MEMORY
Figure 1. FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
Y-Gating
2nd half Page Register & S/A
X-Buffers
Latches
& Decoders
A9 - A22
64M + 2M Bit
NAND Flash
ARRAY
Y-Buffers
Latches
& Decoders
A 0 - A7
(512 + 16)Byte x 16384
1st half Page Register & S/A
A8
Y-Gating
Command
Command
Register
CE
RE
WE
VCCQ
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE WP
Figure 2. ARRAY ORGANIZATION
1 Block(=16 Row)
(8K + 256) Byte
16K Row
(=1024 Block)
1st half Page Register
2nd half Page Register
(=256 Bytes)
(=256 Bytes)
1 Page = 528 Bytes
1 Block = 528 Bytes x 16 Pages
= (8K + 256) Bytes
1 Device = 528 Bytes x 16Pages x 1024 Blocks
= 66 Mbits
8 bit
512B column
16 Byte Column
Page Register
512 Byte
1st Cycle
I/O 0 ~ I/O 7
16 Byte
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
A0
A1
A2
A3
A4
A5
A6
A7
Column Address
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
Row Address
3rd Cycle
A17
A18
A19
A20
A21
A22
*X
*X
(Page Address)
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is internally set to "Low" or "High" by the 00h or 01h Command.
* X can be High or Low.
3
KM29U64000T, KM29U64000IT
FLASH MEMORY
PRODUCT INTRODUCTION
The KM29U64000 is a 66Mbit(69,206,016 bit) memory organized as 16,384 rows by 528 columns. Spare sixteen columns are
located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells
that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 16
pages formed by one NAND structures, totaling 4,224 NAND structures of 16 cells. The array organization is shown in Figure 2. The
program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory
array consists of 1024 separately erasable 8K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the
KM29U64000.
The KM29U64000 has addresses multiplexed into 8 I/O′s. This scheme dramatically reduces pin counts and allows systems
upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through
I/O′s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address
Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle
except for Block Erase command which requires two cycles: one cycle for erase-setup and another for erase-execution after block
address loading. The 8M byte physical space requires 23 addresses, thereby requiring three cycles for byte-level addressing: column address, low row address and high row address, in that order. Page Read and Page Program need the same three address
cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used.
Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of
the KM29U64000.
Table 1. COMMAND SETS
Function
Sequential Data Input
Read 1
1st. Cycle
2nd. Cycle
80h
-
00h/01h
-
(1)
(2)
Read 2
Acceptable Command during Busy
50h
-
Read ID
90h
-
Reset
FFh
-
Page Program
10h
-
Block Erase
60h
D0h
Read Status
70h
-
NOTE : 1. The 00H command defines starting address of the 1st half of registers.
The 01H command defines starting address of the 2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is
automatically moved to the 1st half register(00h) on the next cycle.
2. The 50h command is valid only when the SE(pin 40) is low level.
4
O
O
KM29U64000T, KM29U64000IT
FLASH MEMORY
PIN DESCRIPTION
Command Latch Enable(CLE)
The CLE input controls the path activation for commands sent to the command register. When active high, commands are latched
into the command register through the I/O ports on the rising edge of the WE signal.
Address Latch Enable(ALE)
The ALE input controls the path activation for address and input data to the internal address/data register.
Addresses are latched on the rising edge of WE with ALE high, and input data is latched when ALE is low.
Chip Enable(CE)
The CE input is the device selection control. When CE goes high during a read operation the device is returned to standby mode.
However, when the device is in the busy state during program or erase, CE high is ignored, and does not return the device to standby
mode.
Write Enable(WE)
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
Read Enable(RE)
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge
of RE which also increments the internal column address counter by one.
Spare Area Enable(SE)
The SE input controls the spare area selection when SE is high, the device is deselected the spare area during Read1, Sequential
data input and Page Program.
I/O Port : I/O 0 ~ I/O 7
The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z
when the chip is deselected or when the outputs are disabled.
Write Protect(WP)
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when
the WP pin is active low.
Ready/Busy(R/B)
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is
in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip
is deselected or when outputs are disabled.
Power Line(V CC & V CCQ)
The VCCQ is the power supply for I/O interface logic. It is electrically isolated from main power line(VCC=2.7V~3.6V) for supporting
5V tolerant I/O with 5V power supply at VCCQ.
5
KM29U64000T, KM29U64000IT
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
VIN
-0.6 to + 6.0
V
VCC
-0.6 to + 4.6
V
VCCQ
-0.6 to + 6.0
V
Voltage on any pin relative to V SS
Temperature Under Bias
KM29U64000T
-10 to + 125
TBIAS
KM29U64000IT
°C
-40 to + 125
Storage Temperature
TSTG
-65 to + 150
°C
IOS
5
mA
Short Circuit Output Current
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V CCQ+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, KM29U64000T:T A=0 to 70°C, KM29U64000IT:TA=-40 to 85°C)
Symbol
Min
Typ.
Max
Unit
Supply Voltage
Parameter
VCC
2.7
3.3
3.6
V
Supply Voltage
VCCQ*1
2.7
-
5.5
V
Supply Voltage
VSS
0
0
0
V
NOTE :
1. VCC and VCCQ pins are separated each other.
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Operating
Current
Symbol
Test Conditions
tcycle=50ns, CE=VIL, IOUT=0mA
Min
Typ
Max
Sequential Read
ICC1
-
10
20
Program
ICC2
-
-
10
20
Erase
ICC3
-
-
10
20
1
Stand-by Current(TTL)
ISB1
CE=VIH, WP=SE=0V/V CC
-
-
Stand-by Current(CMOS)
ISB2
CE=VCC-0.2, WP=SE=0V/VCC
-
10
50
Input Leakage Current
ILI
VIN=0 to 3.6V
-
-
±10
Output Leakage Current
ILO
VOUT=0 to 3.6V
-
-
±10
Input High Voltage
VIH
I/O pins
2.0
-
VCCQ+0.3
Except I/O pins
2.0
-
VCC+0.3
-0.3
-
0.8
2.4
-
-
Input Low Voltage, All inputs
VIL
Output High Voltage Level
VOH
IOH=-400µA
Output Low Voltage Level
VOL
IOL=2.1mA
-
-
0.4
Output Low Current(R/B)
IOL(R/B)
VOL=0.4V
8
10
-
6
Unit
mA
µA
V
mA
KM29U64000T, KM29U64000IT
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
Min
Typ.
Max
Unit
NVB
1014
1020
1024
Blocks
NOTE :
1. The KM29U64000 may include invalid blocks. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these invalid
blocks for program and erase. During its lifetime of 10 years and/or 1million program/erase cycles,the minimum number of valid blocks are guaranteed though its initial number could be reduced. (Refer to the attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
AC TEST CONDITION
(KM29U64000T:T A=0 to 70°C, KM29U64000IT:TA=-40 to 85°C, VCC=2.7V~3.6V unless otherwise noted)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load (3.0V +/-10%)
1 TTL GATE and CL = 50pF
Output Load (3.3V +/-10%)
1 TTL GATE and CL = 100pF
CAPACITANCE(TA=25°C, VCC=3.3V, f=1.0MHz)
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
Item
CI/O
VIL=0V
-
10
pF
Input Capacitance
CIN
VIN=0V
-
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
WE
RE
SE
WP
H
L
L
H
X
X
L
H
L
H
X
X
H
L
L
H
X
H
L
H
L
H
X
H
L
L
L
H
L
L
L
H
L
L
L
H
X
X
X
X
X
X
X
Mode
Read Mode
Write Mode
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
L/H
(3)
H
L/H
(3)
Data Input
X
Sequential Read & Data Output
H
L/H(3)
X
During Read(Busy)
X
X
L/H(3)
H
During Program(Busy)
X
X
X
X
H
During Erase(Busy)
X(1)
X
X
X
X
L
Write Protect
X
H
X
X
0V/VCC(2) 0V/V CC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
tPROG
-
200
1000
µs
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
tBERS
-
2
4
ms
Program Time
7
KM29U64000T, KM29U64000IT
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
tCLS
0
-
ns
CLE Hold Time
tCLH
10
-
ns
CE Setup Time
tCS
0
-
ns
CE Hold Time
tCH
10
-
ns
WE Pulse Width
tWP
25
-
ns
ALE Setup Time
tALS
0
-
ns
ALE Hold Time
tALH
10
-
ns
Data Setup Time
tDS
20
-
ns
Data Hold Time
tDH
10
-
ns
Write Cycle Time
tWC
50
-
ns
WE High Hold Time
tWH
15
-
ns
AC Characteristics for Operation
Parameter
Symbol
Min
Max
tR
-
7
µs
ALE to RE Delay( ID read )
tAR1
100
-
ns
Data Transfer from Cell to Register
Unit
ALE to RE Delay(Read cycle)
tAR2
50
-
ns
CE to RE Delay( ID read)
tCR
100
-
ns
Ready to RE Low
tRR
20
-
ns
RE Pulse Width
tRP
30
-
ns
WE High to Busy
tWB
-
100
ns
Read Cycle Time
tRC
50
-
ns
RE Access Time
tREA
-
35
ns
RE High to Output Hi-Z
tRHZ
15
30
ns
CE High to Output Hi-Z
tCHZ
-
20
ns
RE High Hold Time
tREH
15
-
ns
Output Hi-Z to RE Low
tIR
0
-
ns
Last RE High to Busy(at sequential read)
tRB
-
100
ns
tCRY
-
CE High Hold Time(at the last serial read)(3)
tCEH
100
-
ns
RE Low to Status Output
tRSTO
-
35
ns
CE Low to Status Output
tCSTO
-
45
ns
CE High to Ready(in case of interception by CE at read)
(1)
WE High to RE Low
RE access time(Read ID)
50 +tr(R/B)
(2)
ns
tWHR
60
-
ns
tREADID
-
35
ns
tRST
-
5/10/500
µs
Device Resetting Time(Read/Program/Erase)
NOTE : 1. If CE goes high within 30ns after the rising edge of the last RE, R/B will not return to VOL.
2. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
3. To break the sequential read cycle, CE must be held high for longer time than tCEH.
8
KM29U64000T, KM29U64000IT
FLASH MEMORY
NAND Flash Technical Notes
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. Typically,
an invalid block will contain a single bad bit. The information regarding the invalid block(s) is so called as the invalid block information. The invalid block information is written to the 1st or the 2nd page of the invalid block(s) with 00h data. Devices with invalid
block(s) have the same quality level or as devices with all valid blocks and have the same AC and DC characteristics. An invalid
block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block of the NAND
Flash, however, is fully guaranteed to be a valid block.
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block information is written prior to shipping. Since the
invalid block information is also erasable in most cases, it is impossible to recover the information once it has been
erased. Therefore, the system must be able to recognize the invalid block(s) based on the original invalid block
information and create the invalid block table via the following suggested flow chart(Figure 1). Any intentional erasure of the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Create (or update)
Invalid Block(s) Table
No
*
Check "FFH" on the 1st and 2nd page
Check "FFH" ?
Yes
No
Last Block ?
Yes
End
Figure 1. Flow chart to create invalid block table.
9
KM29U64000T, KM29U64000IT
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Error in write or read operation
Over its life time, the additional invalid blocks may occur. Through the tight process control and intensive testing, Samsung minimizes the additional block failure rate, which is projected below 0.1% up until 1million program/erase cycles. Refer to the qualification
report for the actual data.The following possible failure modes should be considered to implement a highly reliable system.
Failure Mode
Write
Read
ECC
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Single Bit Failure
Verify ECC -> Block Replacement or ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Flow Chart
If ECC is used, this verification
operation is not needed.
Start
Write 00H
Write 80H
Write Address
Write Address
Wait for tR Time
Write Data
Write 10H
Verify Data
Write 70H
No
*
Program Error
Yes
Program Completed
SR. 6 = 1 ?
or R/B = 1 ?
*
Program Error
Yes
No
No
*
SR. 0 = 0 ?
Yes
10
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
KM29U64000T, KM29U64000IT
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60H
Write 00H
Write Block Address
Write Address
Write D0H
Read Data
Write 70H
ECC Generation
SR. 6 = 1 ?
or R/B = 1 ?
*
Erase Error
No
Reclaim the Error
Verify ECC
Yes
Yes
No
*
SR. 0 = 0 ?
Page Read Completed
Block Replacement
Yes
*
Erase Completed
*
No
: copy the corrected whole block data to another
block (recommended for high reliability system)
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
Buffer
memory
error occurs
Block A
Block B
11
When the error happens in Block "A", try to write the
data into another Block "B" by reloading from an external buffer. Then, prevent further system access to
Block "A"(by creating a "invalid block" table or other
appropriate scheme.)
KM29U64000T, KM29U64000IT
FLASH MEMORY
Pointer Operation of KM29U64000
The KM29U64000 has three read modes to set the destination of the pointer. The pointer is set to "A" area by the "00h" command, to
"B" area by the "01" command, and to "C" area by the "50h" command. Table 1 shows the destination of the pointer, and figure 2
shows the block diagram of its operations.
"A" area
(00h plane)
"B" area
(01h plane)
"C" area
(50h plane)
256 Byte
256 Byte
16 Byte
"A"
"B"
"C"
Table 1. Destination of the pointer
Command
Pointer position
Area
00H
01H
50H
0 ~ 255 byte
256 ~ 511 byte
512 ~ 527 byte
1st half array(A)
2nd half array(B)
spare array(C)
Internal
Page Buffer
Pointer select
commnad
(00h, 01h, 50h)
Pointer
Figure 2. Block diagram of pointer Operation
Example of Pointer Operation programming
(1) "A" area program
Address / Data input
50h
00h
"C" area
80h
10h
"A" area
Address / Data input
80h
(2) "B" area program
"A" area program
Address / Data input
Address / Data input
00h
01h
"A" area
80h
10h
"B" area
80h
"A" area program
Address / Data input
Address / Data input
50h
"A" area
10h
"B" area program
(3) "C" area program
00h
10h
"A" area program
80h
10h
"C" area
80h
"C" area program
Table 2. Pointer Status after each operation
Operation
Program/Erase
Pointer status after operation
With previous 00H, Device is set to 00H Plane
With previous 01H, Device is set to 00H Plane*
With previous 50H, Device is set to 50H Plane
Reset
"00h" Plane("A" area)
Power up
"00h" Plane("A" area)
* 01H command is valid just one time when it is used as a pointer for program/erase.
12
10h
"C" area program
KM29U64000T, KM29U64000IT
FLASH MEMORY
System Interface Using CE don’t-care.
For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading would provide significant savings in power consumption.
Figure 3. Program Operation with CE don’t-care.
CLE
CE don’t-care
≈
≈
CE
WE
ALE
I/O0~7
80H
Start Add.(3Cycle)
Data Input
Data Input
(Min. 10ns)
10H
(Max. 45ns)
tCS
tCH
tCEA
CE
CE
tREA
RE
tWP
WE
I/O0~7
Timing requirements : If CE is is exerted high during data-loading,
tCS must be minimum 10ns and tWC must be increased accordingly.
out
Timing requirements : If CE is is exerted high during sequential
data-reading, the falling edge of CE to valid data(tCEA) must
be kept greater than 45ns.
Figure 4. Read Operation with CE don’t-care.
CLE
CE don’t-care
≈
CE
RE
ALE
tR
R/B
WE
I/O0~7
00H
Data Output(sequential)
Start Add.(3Cycle)
13
KM29U64000T, KM29U64000IT
FLASH MEMORY
* Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALH
tALS
ALE
tDS
tDH
Command
I/O0 ~ 7
* Address Latch Cycle
CLE
tCS
tWC
tWC
CE
tWP
tWP
tWP
WE
tCLS
tWH
tWH
tALH
tALS
ALE
tDS
I/O0 ~ 7
tDH
A0~A7
14
tDS
tDH
A9~A16
tDS
tDH
A17~A22
KM29U64000T, KM29U64000IT
FLASH MEMORY
* Input Data Latch Cycle
tCLH
CLE
tCH
CE
tWC
tALS
≈
ALE
tWP
tWP
tWP
WE
tDS
I/O0 ~ 7
tWH
tDH
DIN 0
tDS
tDH
tDS
tDH
DIN 511
DIN 1
* Sequential Out Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
CE
tRP
tREA
tREH
tREA
tREA
tCHZ*
RE
tRHZ
tRHZ*
I/O0 ~ 7
Dout
Dout
Dout
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
15
KM29U64000T, KM29U64000IT
FLASH MEMORY
* Status Read Cycle
tCLS
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
tCSTO
tCHZ
tWHR
RE
tDH
tDS
I/O0 ~ 7
tIR
tRSTO
tRHZ
Status Output
70H
READ1 OPERATION(READ ONE PAGE)
CLE
tCEH
CE
tCHZ
tWC
WE
tWB
tAR2
tCRY
ALE
tR
tRHZ
tRC
≈
RE
I/O0 ~ 7
00h or 01h
A0 ~ A 7
Column
Address
R/B
A9 ~ A16
A17 ~ A22
Dout N
Page(Row)
Address
Busy
16
Dout N+1
Dout N+2
Dout N+3
≈ ≈
tRR
Dout 527
tRB
KM29U64000T, KM29U64000IT
FLASH MEMORY
READ1 OPERATION(INTERCEPTED BY CE)
CLE
CE
WE
tWB
tCHZ
tAR2
ALE
tR
tRC
RE
ttRR
RR
I/O0 ~ 7
00h or 01h
A0 ~ A7
A9 ~ A16
Column
Address
A17 ~ A22
Dout N
Dout N+1
Dout N+2
Dout N+3
Page(Row)
Address
Busy
R/B
READ2 OPERATION(READ ONE PAGE)
CLE
CE
WE
tR
tWB
tAR2
ALE
≈
tRR
50H
A0 ~ A7
Dout
511+M
A9 ~ A16 A17 ~ A22
R/B
M Address
Dout
511+M+1
≈
I/O0 ~ 7
≈
RE
Dout 527
Selected
Row
A0 ~ A3 :Valid Address
A4 ~ A7 :Dont care
512
16
Start
address M
17
KM29U64000T, KM29U64000IT
FLASH MEMORY
SEQUENTIAL ROW READ OPERATION
CLE
CE
WE
≈
≈
ALE
RE
Dout
N+2
Dout
527
Dout
0
Dout
2
Dout
527
Busy
Busy
R/B
Dout
1
≈
Dout
N+1
≈
Dout
N
A0 ~ A7 A9 ~ A16 A17 ~ A22
≈
00H
≈
I/O0 ~ 7
M
M+1
N
Output
Output
PAGE PROGRAM OPERATION
CLE
CE
tWC
tWC
tWC
WE
tWB
tPROG
ALE
I/O0 ~ 7
80H
A0 ~ A7 A9 ~ A16 A17 ~ A22
Sequential Data Column
Input Command Address
Page(Row)
Address
≈ ≈
RE
Din
Din
Din
10H
527
N
N+1
1 up to 528 Byte Data
Program
Sequential Input
Command
≈
R/B
70H
18
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
KM29U64000T, KM29U64000IT
FLASH MEMORY
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
CLE
CE
tWC
tWC
WE
tWB
tBERS
ALE
RE
I/O0 ~ 7
60H
A9 ~ A16 A17 ~ A22
DOH
70H
I/O0
Block
Address
Busy
≈
R/B
Auto Block Erase Setup Command
Erase Command
Read Status
Command
MANUFACTURE & DEVICE ID READ OPERATION
CLE
CE
WE
ALE
RE
tREADID
I/O0 ~ 7
90H
00H
ECH
Read ID Command
Maker Code
19
E6H
Device Code
I/O0 =0 Successful Erase
I/O0 =1 Error in Erase
KM29U64000T, KM29U64000IT
FLASH MEMORY
DEVICE OPERATION
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00H to the command register along with three address cycles. Once the command is latched, it does not need to be written for the following page read operation. Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred to the data registers in less than 7µs(tR). The CPU can detect the completion of this data transfer(tR) by analyzing the output
of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing RE.
High to low transitions of the RE clock output the data stating from the selected column address up to the last column address(column 511 or 527 depending on the state of SE pin).
After the data of last column address is clocked out, the next page is automatically selected for sequential row read.
Waiting 7µs again allows reading the selected page.The sequential row read operation is terminated by bringing CE high. The way
the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes 512 to
527 may be selectively accessed by writing the Read2 command with SE pin low. Addresses A0 to A3 set the starting address of the
spare area while addresses A4 to A7 are ignored. Unless the operation is aborted, the page address is automatically incremented for
sequential row read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1 command(00H/01H) is needed to move the pointer back to the main area. Figures 3 thru 6 show typical sequence and timings for each
read operation.
Figure 3. Read1 Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/O0 ~ 7
00H
01H
Data Output(Sequential)
Start Add.(3Cycle)
A0 ~ A7 & A9 ~ A22
(00H Command)
1st half array
(01H Command)*
2nd half array
Data Field
Spare Field
1st half array
2nd half array
Data Field
Spare Field
* After data access on 2nd half array by 01H command, the start pointer is automatically moved to 1st half array (00H) at next cycle.
20
KM29U64000T, KM29U64000IT
FLASH MEMORY
Figure 4. Read2 Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/O0 ~ 7
50H
Data Output(Sequential)
Start Add.(3Cycle)
A0 ~ A3 & A9 ~ A22
(A4 ~ A7 :
Don't Care)
Spare Field
1st half array
2nd half array
Data Field
Spare Field
tR
≈
Figure 5. Sequential Row Read1 Operation
tR
tR
R/B
I/O0 ~ 7
00H
Start Add.(3Cycle)
Data Output
1st
01H
A0 ~ A7 & A9 ~ A22
1st half array
2nd half array
Data Field
Data Output
2nd
(528 Byte)
Nth
(528 Byte)
(SE=L, 01H Command)
(SE=L, 00H Command)
1st half array
Data Output
(SE=H, 00H Command)
2nd half array
1st half array
2nd half array
1st
2nd
1st
2nd
1st
2nd
Nth
Nth
Nth
Spare Field
Data Field
21
Spare Field
Data Field
Spare Field
KM29U64000T, KM29U64000IT
FLASH MEMORY
tR
≈
Figure 6. Sequential Row Read2 Operation(SE=fixed low)
tR
tR
R/B
I/O0 ~ 7
50H
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
(16 Byte)
Nth
(16 Byte)
A0 ~ A3 & A9 ~ A22
(A 4 ~ A7 :
Don′t Care)
1st half array
2nd half array
1st
2nd
Nth
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a byte or consecutive
bytes up to 528, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed ten. The addressing may be done in any random order in a block. A
page program cycle consists of a serial data loading period in which up to 528 bytes of data may be loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. Serial data loading can
be started from 2nd half array by moving pointer. About the pointer operation, please refer to the attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80H), followed by the three cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm command(10H) initiates the programming process. Writing 10H alone without previously entering the serial data will not initiate the programming process. The internal write controller automatically executes the algorithms and timings necessary for program and verify,
thereby freeing the CPU for other tasks. Once the program process starts, the Read Status Register command may be entered, with
RE and CE low, to read the status register. The CPU can detect the completion of a program cycle by monitoring the R/B output, or
the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in
progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 7). The internal write verify
detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command
mode until another valid command is written to the command register.
Figure 7. Program & Read Status Operation
tPROG
R/B
I/O0 ~ 7
80H
Address & Data Input
10H
70H
A0 ~ A7 & A9 ~ A22
528 Byte Data
I/O0
Fail
22
Pass
KM29U64000T, KM29U64000IT
FLASH MEMORY
BLOCK ERASE
The Erase operation is done on a block(8K Byte) basis. Block address loading is accomplished in two cycles initiated by an Erase
Setup command(60H). Only address A13 to A22 is valid while A9 to A12 is ignored. The Erase Confirm command(D0H) following the
block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command
ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase, erase-verify and pulse
repetition where required. When the erase operation is completed, the Write Status Bit(I/O 0) may be checked.
Figure 8 details the sequence.
Figure 8. Block Erase Operation
tBERS
R/B
I/O0 ~ 7
60H
Address Input(2Cycle)
I/O0
70H
D0H
Pass
Block Add. : A9 ~ A22
Fail
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70H command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00H or 50H) should be given before sequential page read cycle.
Table2. Status Register Definition
SR
Status
Definition
I/O0
Program / Erase
"0" : Successful Program / Erase
"1" : Error in Program / Erase
I/O1
I/O2
I/O3
"0"
Reserved for Future
Use
"0"
"0"
I/O4
"0"
I/O5
"0"
I/O6
Device Operation
I/O7
Write Protect
23
"0" : Busy
"1" : Ready
"0" : Protected
"1" : Not Protected
KM29U64000T, KM29U64000IT
FLASH MEMORY
READ ID
The device contains a product identification mode, initiated by writing 90H to the command register, followed by an address input of
00H. Two read cycles sequentially output the manufacture code(ECH), and the device code (E6H) respectively. The command register remains in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
Figure 9. Read ID Operation
CLE
tCR
CE
WE
tAR1
ALE
RE
I/O0 ~ 7
tREADID
90H
00
ECH
Address. 1 cycle
Maker code
E6H
Device code
RESET
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70H command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
dose not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00H or 50H) should be given before sequential page read cycle.
Figure 10. RESET Operation
tRST
R/B
I/O0 ~ 7
FFH
Table3. Device Status
Operation Mode
After Power-up
After Reset
Read 1
Waiting for next command
24
KM29U64000T, KM29U64000IT
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper
operation and the value may be calculated by the following equation.
VCC
3.2V
VCC(Max.) - VOL(Max.)
R/B
open drain output
Rp =
IOL + ∑IL
=
8mA + ∑IL
where IL is the sum of the input currents of all devices tied to the
R/B pin.
GND
Device
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL
during power-up and power-down as shown in Figure 11. The two step command sequence for program/erase provides additional
software protection.
≈
Figure 11. AC Waveforms for Power Transition
~ 2.5V
VCC
≈
High
WP
25
~ 2.5V
KM29U64000T, KM29U64000IT
FLASH MEMORY
PACKAGE DIMENSIONS
44(40) LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(II)
44(40) - TSOP2 - 400F
Unit :mm/Inch
0~8°
0.25
0.010 TYP
#23(21)
#1
10.16
0.400
11.76±0.20
0.463±0.008
0.45~0.75
0.018~0.030
#44(40)
0.50
0.020
#22(20)
+0.10
0.15 -0.05
+0.004
1.00±0.10
0.039±0.004
18.81
Max.
0.741
18.41±0.10
0.725 ±0.004
1.20
Max.
0.047
0.006 -0.002
(
0.805
)
0.032
0.35±0.10
0.014±0.004
0.05
Min.
0.002
0.10
MAX
0.004
0.80
0.0315
26