1416GN-120E/EL/EP Datasheet 120 W DME/L-Band Radar Driver GaN Power Transistor 120 W DME/L-Band Radar Driver GaN Power Transistor Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. 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All other trademarks and service marks are the property of their respective owners. 2 120 W DME/L-Band Radar Driver GaN Power Transistor Revision History 1.1 Revision 1.0 Revision 1.0 was the first publication of this document. 3 120 W DME/L-Band Radar Driver GaN Power Transistor Contents Revision History.............................................................................................................................. 3 1.1 Revision 1.0 ................................................................................................................................................ 3 2 Product Overview .................................................................................................................... 7 2.1 Applications ............................................................................................................................................... 7 2.1.1 Key Features ................................................................................................................................ 8 3 Electrical Specifications ............................................................................................................ 9 3.1 Absolute Maximum Ratings ....................................................................................................................... 9 3.2 Electrical Characteristics at 25 °C ............................................................................................................... 9 3.3 Functional Characteristics at 25 °C ............................................................................................................ 9 3.4 Typical Broadband Performance Data (300 µS, 10% Pulsing) .................................................................. 10 4 Transistor Impedance Information......................................................................................... 11 5 Transistor Test Information .................................................................................................... 12 5.1 Transistor Test Circuit Diagram ................................................................................................................ 12 6 Package Outline and Pin Information .................................................................................... 13 6.1 55-QQ Common Source Package Dimensions and Terminal Information ................................................ 13 6.2 55-QQP Common Source Package Dimensions and Terminal Information.............................................. 14 6.3 Overall Pallet Dimensions ........................................................................................................................ 15 4 120 W DME/L-Band Radar Driver GaN Power Transistor List of Figures Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550")................................................................................ 7 Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230").............................................................................. 7 Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") ................................................................................. 7 Figure 4 Typical Broadband Performance Data Graphs ............................................................................................. 10 Figure 5 Impedance Definition................................................................................................................................... 11 Figure 6 Transistor Test Circuit .................................................................................................................................. 12 Figure 7 55-QQ Package Dimensions and Terminal Information ............................................................................... 13 Figure 8 55-QQP Package Dimensions and Terminal Information ............................................................................. 14 Figure 9 Pallet Package Dimensions .......................................................................................................................... 15 5 120 W DME/L-Band Radar Driver GaN Power Transistor List of Tables Table 1 Absolute Maximum Ratings ............................................................................................................................ 9 Table 2 Typical Electrical Characteristics at 25 °C ........................................................................................................ 9 Table 3 Typical Functional Characteristics at 25 °C...................................................................................................... 9 Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) ....................................................................... 10 Table 5 Component List 1416GN-120E/EL ................................................................................................................. 12 Table 6 55-QQ Package Dimensions .......................................................................................................................... 13 Table 7 55-QQP Package Dimensions ........................................................................................................................ 14 6 120 W DME/L-Band Radar Driver GaN Power Transistor 2 Product Overview The 1416GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 μS pulse width and 10% long term duty cycle pulsing across the 1400 MHz to 1600 MHz band. The transistor has an internal pre-match for optimal performance. The hermetically sealed transistor is available in two package types, both the bolt-down flange 55-QQ package and the solder-down earless flange 55-QQP package. It is also available mounted in a 50 Ω IN/OUT pallet. These three products are specifically designed for use as drivers in DME (Distance Measuring Equipment) and L-Band pulsed radar transmit power amplifiers, and they utilize all-gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99. Figure 1 Case Outline 55-QQ Common Source (0.160" × 0.550") Figure 2 Case Outline 55-QQP Common Source (0.160" × 0.230") Figure 3 Pallet Outline 50 Ω IN/OUT (0.600" × 1.200" × 0.150") 2.1 Applications The 1416GN-120E and the 1416GN-120EL transistors and the 1416GN-120EP pallet are specifically designed for radar, L-Band avionics, and communications applications. 7 120 W DME/L-Band Radar Driver GaN Power Transistor 2.1.1 Key Features The following are the key features of the 1416GN-120E/EL/EP E-Class Earless/Eared GaN transistor products: • 1400 MHz–1600 MHz, 120 W pulsed output power, 300 µS-10% pulsing • Common source, Class AB, 50 VDD bias voltage • High efficiency: >60% typical across the frequency band • Extremely compact size • High power gain: 17 dB typical • Excellent gain flatness: 0.1 dB typical • Ideal for radar, L-Band avionics, and communications applications • Utilizes all-gold metallization and eutectic die attach for highest reliability • 50 Ω IN/OUT lumped element, very small footprint, plug-and-play pallets available 8 120 W DME/L-Band Radar Driver GaN Power Transistor 3 Electrical Specifications 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings at 25 °C unless otherwise specified. Table 1 Absolute Maximum Ratings Rating Units Maximum power dissipation Device dissipation at 25 °C 265 W Maximum voltage and current Drain-Source voltage (VDSS) 125 V Gate-Source voltage (VGS) –8 to 0 V Storage temperature (TSTG) –55 to 125 °C Operating junction temperature 200 °C Maximum temperatures 3.2 Value Electrical Characteristics at 25 °C The following table shows the typical electrical characteristics at 25 °C Table 2 Typical Electrical Characteristics at 25 °C Symbol Characteristics Test Conditions Min Typ POUT Output power PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz 120 130 W GP Power gain PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz 16.8 17.2 dB ȠD Drain efficiency PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz 57 65 % Dr Droop PIN = 2.5 W, Freq = 1400, 1500, 1600 MHz VSWR-T Load mismatch tolerance POUT = 2.5 W, Freq = 1500 MHz, 100 µS-10% 5:1 ӨJC Thermal resistance 300 µS, 10% duty cycle 1.25 0.3 Max 0.6 Units dB °C/W Bias Condition: VDD = 50 V, IDQ = 30 mA constant current (VGS = –2.0 to –4.5 V typical) 3.3 Functional Characteristics at 25 °C Table 3 Typical Functional Characteristics at 25 °C Symbol Characteristics Test Conditions ID(Off) Drain leakage current IG(Off) Gate leakage current Min Typ Max Units VGS = –8 V, VD = 125 V 12 mA VGS = –8 V, VD = 0 V 4 mA 9 120 W DME/L-Band Radar Driver GaN Power Transistor 3.4 Typical Broadband Performance Data (300 µS, 10% Pulsing) Table 4 Typical Broadband Performance Data (300 µS, 10% Pulsing) Frequency PIN (W) POUT (W) ID (mA) IRL (dB) ȠD (%) GP (dB) Droop (dB) 1400 MHz 2.5 134 460 –6.0 64 17.3 0.35 1500 MHz 2.5 144 450 –12.0 69 17.6 0.30 1600 MHz 2.5 132 410 –6.0 71 17.2 0.20 Figure 4 Typical Broadband Performance Data Graphs 10 120 W DME/L-Band Radar Driver GaN Power Transistor 4 Transistor Impedance Information The following diagram shows the transistor impedance information for 1416GN-120E/EL/EP. Figure 5 Impedance Definition Output Matching Network D Input Matching Network G S ZLOAD 50 Ω ZSOURCE 50 Ω Note: ZSOURCE is looking into the input circuit ZLOAD is looking into the output circuit For information about source and load impedances for 1416GN-120E/EL/EP, contact your Microsemi representative. 11 120 W DME/L-Band Radar Driver GaN Power Transistor 5 Transistor Test Information 5.1 Transistor Test Circuit Diagram Figure 6 Transistor Test Circuit Note: Distance (D) = 0.090"–0.0950" The board material is Rogers Duroid 6006, 0.250" thickness, and εr = 6.15. The following table lists the components for 1416GN-120E/EL. Table 5 Component List 1416GN-120E/EL Item Description Value C1 Chip capacitor A size – ATC600S series 68 pF C2 Chip capacitor A size – ATC600S series 4.7 pF C3 Chip capacitor A size – ATC600S series 0.9 pF C41 Chip capacitor A size 470 pF C51 Chip capacitor 1210 size 4.7 uF C6 Chip capacitor A size – ATC600S series 3 pF C7 Chip capacitor A size – ATC600S series 0.5 pF to 0.7 pF C8 Chip capacitor A size – ATC600S series 1 pF C9 Electrolytic capacitor (63 V) 470 uF C10 Chip capacitor A size – ATC600S series 82 pF R1 Chip resistor size 0805 10 Ω R2 Chip resistor size 0805 5.1 Ω L1 Chip inductor size 0603 47 nH L21 Chip inductor size 1608 (500 mA current) 1.2 nH 1. Two of these are needed 12 120 W DME/L-Band Radar Driver GaN Power Transistor 6 Package Outline and Pin Information The 1416GN-125E transistor is available in the 55-QQP case outline and the 1416GN-125EL transistor is available in the 55-QQP case outline. The 1416GN-125EP is available in the 90-1416GN250EP pallet outline. All three products are configured for common source operation. 6.1 55-QQ Common Source Package Dimensions and Terminal Information Figure 7 55-QQ Package Dimensions and Terminal Information Pin 1: Drain, Pin 2: Source, Pin 3: Gate Table 6 55-QQ Package Dimensions Dim Millimeters Tol (mm) Inches Tol (in.) A 13.970 0.250 0.550 0.010 B 4.570 0.250 0.160 0.010 C 3.860 0.330 0.152 0.013 D 1.270 0.130 0.050 0.005 E 1.020 0.130 0.040 0.005 F 1.700 0.130 0.067 0.005 G 0.130 0.025 0.005 0.001 H 8.130 0.250 0.320 0.010 I 45° 5° 45° 5° J 5.080 0.250 0.200 0.010 K 2.54 DIA 0.130 0.100 DIA 0.005 L 1.270 0.130 0.050 0.005 M 9.530 0.130 0.375 0.005 13 120 W DME/L-Band Radar Driver GaN Power Transistor 6.2 55-QQP Common Source Package Dimensions and Terminal Information Figure 8 55-QQP Package Dimensions and Terminal Information Pin 1: Drain, Pin 2: Source, Pin 3: Gate Table 7 55-QQP Package Dimensions Dim Millimeters Tol (mm) Inches Tol (in.) A 5.840 0.250 0.230 0.010 B 4.060 0.250 0.160 0.010 C 3.170 0.050 0.125 0.002 D 1.270 0.130 0.050 0.005 E 1.020 0.130 0.040 0.005 F 1.570 0.130 0.062 0.005 G 0.130 0.020 0.005 0.001 H 8.120 0.250 0.320 0.010 I 45° 5° 45° 5° J 5.080 0.250 0.200 0.010 K 1.400 0.130 0.055 0.005 14 120 W DME/L-Band Radar Driver GaN Power Transistor 6.3 Overall Pallet Dimensions Figure 9 Pallet Package Dimensions Dimensions 1.200" × 0.600" × 0.150" 15