Efficiency Through Technology
RELIABILITY REPORT
2008
Power Semiconductor Devices
January 2006 - December 2007
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054
USA
Published February 2008
IXYS Semiconductor GmbH
Edisonstrasse 15
D-68623 Lampertheim
Germany
Humidity Test
QUALITY AND RELIABILITY
Failure Modes: Degradation of electrical leakage
characteristics due to moisture penetration into plastic
packages.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, IGSS, IGES,
VTH.
IXYS is committed to setting a new standard for
excellence in Power Semiconductors. Reflecting our
dedication to industry leadership in the manufacture of
medium to high power devices, reliability has
assumed a primary position in raw material selection,
design, and process technology.
Reliability utilizes information derived from applied
research, engineering design, analysis of field
applications and accelerated stress testing and
integrates this knowledge to optimize device design
and manufacturing processes.
All areas that impact reliability have received
considerable attention in order to achieve our goal to
be the # 1 Reliability Supplier of Power
Semiconductor products. We believe IXYS products
should be the most reliable components in your
system.
We have committed significant resources to
continuously improve and optimize our device design,
wafer fab processes, assembly processes and test
capabilities. As a result of this investment, IXYS has
realized a dramatic improvement in reliability
performance on all standardized tests throughout the
product line.
Excellence in product reliability is “built-in”, not testedin. Moreover, it requires a total systems approach,
involving all parties: from design to raw materials to
manufacturing.
In addition to qualifying new products released to the
market, life and environmental tests are periodically
performed on standard products to maintain feedback
on assembly and fabrication performance to assure
product reliability. Further information on reliability of
power devices is provided on www.ixys.com.
Power Cycle
Failure Modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling can
cause
thermal
and
electrical
performance
degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS,
ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM,
VRRM.
TERMS IN TABLES
SUMMARY TABLES 1 AND 2:
AF: acceleration factor
AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k }
(1)
Ea: activation energy; @ HTRB Ea = 1.0 eV
@ HTGB Ea = 0.4 eV
k: Boltzmann’s constant 8.6·10-5 eV/K
T1: abs. application junction temperature (273+Tj) K
T2: abs. test junction temperature (273+Tj) K
UCL: upper confidence limit (60%)
Total Failures @ 60% UCL:
RELIABILITY TESTS
High Temperature Reverse Bias (HTRB)
N = r + dr
Failure Modes: Gradual degradation of break-down
characteristics due to presence of foreign materials
and polar/ionic contaminants disturbing the electric
field termination structure.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, VTH.
(2)
r: number of failed devices
dr: additional term, depending on both r and UCL
MTTF: Mean Time To Failures = 1/Failure Rate
FIT: 1 FIT = 1 failure / 109 hrs
High Temperature Gate Bias (HTGB)
TABLES 3:
Failure Modes: Rupture of the gate oxide due to
localized thickness variations, structural anomalies,
particulates in the oxide, channel inversion due to
presence of mobile ions in the gate oxide.
Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES.
ΔT: max Tj - min Tj during Test
DEFINITION OF FAILURE
Failure criteria are defined according to IEC 60747
standard series
Temperature Cycle
Failure modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling,
causing thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF.
2
Summary of Tables 1A - 1H: HTRB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 1A
Table 1B
Table 1C
Table 1D
Table 1E
Table 1F
Table 1G
Table 1H
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
ISOPLUS
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
592
35
169
4932
2
3
12483
747
13
116
0
0.92
45956
2752
15
160
1
2
17190
1029
17
170
0
0.92
1939
116
35
645
0
0.92
845
51
24
570
0
0.92
16855
1009
12
210
1
2
20
456
1
-
5066720
193
3220
73702
9
153
43520
2
41
53520
7
111
474548
59
983
1089301
135
2257
118658
7
113
465622
-
Summary of Table 2A - 2C: HTGB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 2A
Table 2B
Table 2C
MOSFET/IGBT
MOSFET/IGBT
ISOPLUS
discrete device *)
Module
231
75
138
4030
0
0.92
4606
1486
15
210
0
0.92
15
460
0
-
3976960
493
1530
199740
25
77
506800
-
*) including ISOPLUS
IXYS Semiconductor GmbH
3
Summary of Tables 3A - 3H: Power Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 3A
Table 3B
Table 3C
Table3D
Table 3E
Table 3F
Table 3G
Table 3H
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
15
344
0
2960000
7
139
0
751300
5
50
0
850000
5
50
0
370000
10
190
0
410000
6
224
0
1520088
9
140
0
380000
2
100
0
280000
Summary of Tables 4A - 4J: Temperature Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 4A
Table 4B
Table 4C
Table4D
Table 4E
Table 4F
Table 4G
Table 4H
Table 4J
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
13
353
0
135700
12
119
0
8400
27
290
2
19500
20
210
0
14900
25
450
0
29900
19
614
0
302000
17
300
0
14300
Summary of Tables 5A, 5E - 5J: Humidity Test
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 5A
Table 5E
Table 5F
Table 5G
Table 5H
Table 5J
MOSFET/IGBT
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
*)
Diode*)
discrete device*)
4
80
0
24800
8
138
0
11088
9
294
1
64384
3
60
0
3840
*) including ISOPLUS
IXYS Semiconductor GmbH
4
Diode
2
40
0
1920
4
80
0
3840
Diode
18
532
0
198200
4
80
0
4000
HTRB (Tables 1A .. 1J)
TABLE 1A: MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 IXBH16N170
TP0619
960
2 IXBH16N170
TP0619
960
3 IXBH40N160
1513
1280
4 IXDH20N120
1436
960
5 IXDH20N120D1
2065
960
6 IXEH28N60C2D2
1578
600
7 IXFA7N80P
K533
640
8 IXFB100N50P
SP0737
460
9 IXFB44N100P
SP0721
800
10 IXFH12N120P
SP0715
960
11 IXFH15N100P
SK0636
800
12 IXFH20N100P
SP0716
800
13 IXFH20N60
SK0544
480
14 IXFH22N50P
N/A
400
15 IXFH26N60Q
SK0604
480
16 IXFH69N30P
SK0527
240
17 IXFK21N100Q
SP0737
800
18 IXFK44N55Q
SP0737
440
19 IXFL60N80P
SP0605
640
20 IXFN82N60P
TJ0645E
480
21 IXFP12N50PM
K550
400
22 IXFQ14N80P
SK0709
640
23 IXFR12N100Q
TP0703
800
24 IXFR14N100Q2
SP0732
800
25 IXFR26N100P
SP0742
800
26 IXFX48N50Q
ZP0545
400
27 IXFX73N30Q
SK0613
240
28 IXFX90N30
SK0613
240
29 IXGH20N170P
K0716E1
960
30 IXGH20N170P
TP0632
960
31 IXGH25N250
TJ0600E
960
32 IXGH28N60B3D1
SP0732
480
33 IXGH30N120B3
TP0606
960
34 IXGH36N60B3D1
SP0732
480
35 IXGH48N60B3
SK0607
480
36 IXGH64N60B3
SK0608
480
37 IXGH72N60B3
SK0608
480
38 IXGH8N100
N/N
800
39 IXGK28N140B3H1
TP0651
960
40 IXGN200N60A2
SP0723
480
41 IXGP120N33TBM-A
K723
264
42 IXGP50N33TC
K0652
264
43 IXGP70N33TBM-A
K726
264
44 IXGP70N33TBM-A
K728
264
45 IXGP90N33TB
K06251
264
46 IXGP90N33TBM-A
K06251
264
47 IXGQ120N30TCD1
SK0631
240
48 IXGQ120N33TB
SK0651
264
49 IXGQ120N33TCD1
SK0639
264
50 IXGQ150N30TCD1
SK0631
240
51 IXGQ150N33TCD1
SK0639
264
52 IXGQ160N30PB
SK0601
240
53 IXGQ160N30PB
SK0601
240
54 IXGQ160N30PB
SK0601
240
55 IXGQ160N30PB
SK0601
240
56 IXGQ180N33TB
SK0711
264
57 IXGQ180N33TC
SK0649
264
58 IXGQ180N33TCD1
SK0639
264
59 IXGQ200N30PB
SK0631
240
60 IXGQ240N30PB
SK0631
240
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
168
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
5
Sample
Size
30
30
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
60
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
3360
3360
3360
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
60000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
61 IXGQ240N30PB
SK0631
240
62 IXGQ240N30PB
SK0631
240
63 IXGQ240N30PB
SK0631
240
64 IXGQ70N33TB
SK0650
264
65 IXGQ85N33PCD1
SK0613
264
66 IXGQ85N33PCD1
SK0638
264
67 IXGQ86N30PB
K0543
240
68 IXGQ90N27PB
SK0621
216
69 IXGQ90N27PB
SK0640
216
70 IXGQ90N30TCD1
SK0631
240
71 IXGQ90N33TC
SK0649
264
72 IXGQ90N33TCD1
SK0639
264
73 IXGQ90N33TCD1
SK0728
264
74 IXGR120N60C2
SP0722
480
75 IXGR48N60C3D1
SP0722
480
76 IXGX120N60B
SP0719
480
77 IXGX72N60B3H1
SP0739
480
78 IXKC13N80C
1769
640
79 IXKC25N80C
1590
640
80 IXKH20N60C5
1631
480
81 IXKH35N60CS
1984
480
82 IXKH35N60CS
1986
480
83 IXKP10N60C5M
1693
480
84 IXKP13N60C5M
1716
480
85 IXKP20N60C5
1653
480
86 IXKP24N60C5
1671
480
87 IXKR25N80C
1521
640
88 IXKT70N60C5
2068
480
89 IXSH30N60B2D1
SP0506
480
90 IXSK40N60CD1
SK0722
480
91 IXTA36N30P
SK0603
240
92 IXTA36N30P
K0621
240
93 IXTA36N30P
K640
240
94 IXTA50N25T
K545
200
95 IXTA50N28T
K0606
224
96 IXTA50N28T
K634
224
97 IXTA50N28T
K640
224
98 IXTA60N20T
K545
160
99 IXTA60N20T
SK0601
160
100 IXTA75N10P
K0531
80
101 IXTA76N25T
K0704
200
102 IXTC110N25T
SP0721
200
103 IXTC200N075T
SP0627
60
104 IXTH130N20T
SP0721
160
105 IXTH150N17T
SK0718
140
106 IXTH160N15T
SK0721
120
107 IXTH1N80P
TP0604
640
108 IXTH30N50L
TK0738
400
109 IXTH3N100P
TP0639
800
110 IXTH76N25T
SP0613
200
111 IXTH86N25T
SP0638
200
112 IXTH8P50
SK0712
400
113 IXTK180N15P
SP0552
120
114 IXTK34N80
SP0546
640
115 IXTK34N80
SP0603
640
116 IXTK34N80
SP0603
640
117 IXTP08N100P
K625
800
118 IXTP08N120P
K0709
960
119 IXTP14N60PM
K631
480
120 IXTP14N60PM
K643
480
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
150
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
168
1000
1000
1000
800
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
6
Sample
Size
30
30
30
30
27
30
30
30
30
30
30
30
30
30
30
30
30
20
20
20
20
20
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
25
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
27000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
20000
20000
20000
3360
3360
20000
20000
20000
16000
3360
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
25000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
no deviations after 168h
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
121 IXTP160N075T
K0707
60
122 IXTP17N30T
K648
240
123 IXTP18N60PM
K631
480
124 IXTP1N100P
K636
800
125 IXTP1R4N100P
K636
800
126 IXTP1R4N120P
K638
960
127 IXTP2R4N120P
K636
960
128 IXTP32N20T
K647
160
129 IXTP36N15T
K648
120
130 IXTP36N25T
K636
200
131 IXTP36N30T
K641
240
132 IXTP44N25T
K636
200
133 IXTP50N25T
K738
200
134 IXTP56N15T
K636
120
135 IXTP62N25T
K648
200
136 IXTP74N15T
K636
120
137 IXTP76N075T
K640
60
138 IXTP76N075T
K726
60
139 IXTP76N075T
SS0728
60
140 IXTP8N50P
K646
400
141 IXTP8N50P
AK732
400
142 IXTP90N15T
K647
120
143 IXTQ182N055T
SK0612
44
144 IXTQ22N50P
SS0633
400
145 IXTQ22N60P
SK0539
480
146 IXTQ22N60P
SK0604
480
147 IXTQ22N60P
SK0609
480
148 IXTQ22N60P
SK0608
480
149 IXTQ22N60P
SK0608
480
150 IXTQ22N60P
SK0609
480
151 IXTQ22N60P
SK0609
480
152 IXTQ26N50P
SK0604
400
153 IXTQ28N15P
SK0653
120
154 IXTQ36P15P
SK0652
120
155 IXTQ44N30T
SK0629
240
156 IXTQ64N25P
SK0535
200
157 IXTQ74N20P
SK0515
160
158 IXTQ76N25T
SK0613
200
159 IXTQ82N25T
SK0603
200
160 IXTQ88N28T
SK0545
224
161 IXTQ88N28T
SK0641
224
162 IXTQ88N30P
SK0605
240
163 IXTQ88N30T
SK0638
240
164 IXTQ96N20P
SS0631
160
165 IXTQ96N25T
SK0648
200
166 IXTT88N30P
SP0626
240
167 IXTV18N60PS
SP0636
480
168 IXTV230N085TS
SP0629
68
169 IXUC200N055
1594
44
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
7
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
20
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
20000
Remark
TABLE 1B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 GWM160-0055P3
1524
2 MIAA20WD600TMH
1844
1844
3 MIAA20WD600TMH
4 MID145-12A3
2031
5 MKI75-06A7T
1847
6 MKI80-06T6K
1818
7 MUBW36-12E7
1898
8 MUBW50-12T8
1777
9 MUBW75-17T8
2001
10 MUBW75-17T8
2001
11 MWI150-12T8T
1897
12 MWI30-06A7T
2069
13 VMO60-05F
1552
Voltage
[V]
240
1120
480
960
480
480
960
960
1540
1360
960
480
400
Temp.
[°C]
150
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
1000
1000
168
168
168
1000
1000
1000
1000
1000
168
168
Sample
Size
6
10
10
10
10
10
10
10
5
5
10
10
10
Failures
TABLE 1C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC132-16io1
1509
2 MCC132-16io1
1980
3 MCC162-08io1
1624
4 MCC162-16io1
1593
5 MCC21-16io8
1812
6 MCC26-16io1
1539
7 MCC310-16
1696
8 MCC312-16
2028
9 MCC44-16io1
1747
10 MCC44-16io1
2006
11 MCC95-16io1
1701
12 MCC95-16io1
1862
13 MCD56-16io1
1587
14 MDD172-16n1
1554
15 MDD95-16
2032
Voltage
[V]
1120
1120
800
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
Temp.
[°C]
125
125
126
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
168
168
168
168
168
168
1000
168
168
168
168
168
168
168
Sample
Size
10
10
20
10
10
10
10
10
10
10
10
10
10
10
10
Failures
TABLE 1D: Controller/Rectifier Bridge
Date Code
# Part Number
or
Test #
1 MMO75-16io1
1727
2 MMO90-16
1710
3 VBO19-16DT1
2011
4 VBO19-16DTI
1584
5 VBO40-16NO6
1860
6 VHF36-16io5
1542
7 VHF36-16io5
1732
8 VUB72-16
1657
9 VUB72-16No1
2004
10 VUB72-16No1
2004
11 VUB72-16No1
2004
12 VUO190-18NO7
2026
13 VUO25-16NO8
1581
14 VUO31-18
1863
15 VUO34-18NO1
1861
16 VWO140-16
1684
17 VY40-16io1
1745
Voltage
[V]
1120
1120
1120
1120
1120
1120
1120
1120
1120
960
960
1260
1120
1260
1260
1120
1120
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
168
168
168
168
168
168
168
168
168
168
1000
168
1000
168
1000
168
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
IXYS Semiconductor GmbH
8
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
1008
10000
10000
1680
1680
1680
10000
10000
5000
5000
10000
1680
1680
Device Hours
[hrs]
10000
1680
3360
1680
1680
1680
1680
10000
1680
1680
1680
1680
1680
1680
1680
Device Hours
[hrs]
1680
1680
1680
1680
1680
1680
1680
1680
1680
1680
1680
10000
1680
10000
1680
10000
1680
Remark
Konverter tested
Inverter tested
Remark
I_R @ increased
Remark
TABLE 1E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
DHF30IM600PN
DHF30IM600QB
DHG10I1200PM
DHG10I600PM
DHG20C600QB
DHG30I1200HA
DHG30I1200HA
DHG40C1200HB
DHG40C600PB
DHG60C600HB
DPG15I400PM
DPG20C200PN
DPG20C400PN
DPG30C300HB
DPG30C300PB
DPG60C200QB
DPG60C300HB
DPG60C300QB
DPG60C400QB
DPG60IM300PC
DSEC60-02Aq
DSEI2x31-06C
DSEI2x61-12B
DSEP15-06A
DSEP29-03
DSEP29-06A
DSEP2x61-12A
DSEP30-06BR
DSEP30-12AR
DSEP60-03A
DSEP60-06A
DSEP75-06AR
DSEP8-03AS
MEO450-12
MEO500-06DA
Date Code
or
Test #
1508
1625
1682
1685
1711
1652
1734
1903
2037
1668
1770
1692
1768
1644
1923
1608
1525
1481
1446
1643
1929
1563
1607
2020
1954
1736
1984
1952
1634
1537
1572
1619
1738
1826
1934
Voltage
[V]
480
480
960
480
480
960
960
960
480
480
320
240
320
240
240
160
240
240
320
240
160
480
960
480
240
480
960
480
960
240
480
480
240
960
480
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
168
168
168
168
168
168
168
168
168
168
1000
1000
186
168
Sample
Size
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
20
20
20
10
20
20
20
20
20
20
6
9
Failures
Date Code
or
Test #
1507
1907
1981
1906
1714
1781
1782
1674
1942
1622
1718
1783
1672
1673
2019
1871
1709
1467
2039
1723
1838
1982
1600
1857
Voltage
[V]
150
150
100
100
45
100
100
200
45
36
24
36
60
12
36
12
100
100
100
150
150
20
150
150
Temp.
[°C]
125
125
125
125
125
125
125
125
100
100
100
100
125
100
100
100
125
125
125
150
150
100
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
168
168
1000
1000
168
168
168
Sample
Size
20
20
20
20
20
16
20
20
20
20
20
20
20
20
20
20
20
10
10
77
77
20
20
20
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
3360
1680
1680
3360
3360
3360
1680
3360
3360
3360
3360
20000
20000
1116
1512
Remark
Device Hours
[hrs]
20000
20000
20000
20000
20000
16000
20000
20000
20000
20000
20000
20000
20000
20000
3360
20000
20000
1680
1680
77000
77000
3360
3360
3360
Remark
TABLE 1F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
DSA120C150QB
DSA120C150QB
DSA30C100HB
DSA30C100PN
DSA30C45HB
DSA60C100PB
DSA70C100HB
DSA90C200HB
DSB10I45PM
DSB15IM45IB
DSB30C30PB
DSB30C45PB
DSB30C60PB
DSB40C15PB
DSS10-0045B
DSS20-0015B
DSS20-01AC
DSS2x41-01A
DSS2x41-01A
DSS6-015AS
DSS6-015AS
DSSK38-0025B
DSSK60-015A
DSSK60-015AR
IXYS Semiconductor GmbH
9
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
TABLE 1G: Thyristor/Diode single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 CS22-08io1M
2014
560
2 CS30-16io1
1855
1120
3 CS30-16io1DCSN
1920
1120
4 CS35-14
2008
980
5 CS45-16io1
1808
1120
6 CS60-16io1
1830
1120
7 CS8-12io2
1605
1280
8 DSA1-16D
2023
1120
9 DSAI75-16B
1858
1120
10 DSDI60-16A
1569
1280
11 DSP25-16
1564
1120
12 DSP25-16
2016
1120
Temp.
[°C]
125
125
125
125
125
125
125
150
150
125
150
150
Time
[hrs]
168
168
1000
168
168
1000
168
168
168
168
168
168
Sample
Size
20
20
20
10
20
20
10
20
10
20
20
20
Failures
0
0
1
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
3360
3360
20000
1680
3360
20000
1680
3360
1680
3360
3360
3360
Remark
I_DRM increased
TABLE 1H: ISOPLUS
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
CS45-16io1
DSEP30-06BR
DSEP30-12AR
DSEP75-06AR
DSS20-01AC
GWM160-0055P3
IXEL40N400
IXFL60N80P
IXFR12N100Q
IXFR14N100Q2
IXFR26N100P
IXGR120N60C2
IXGR48N60C3D1
IXKC13N80C
IXKC25N80C
IXKR25N80C
IXTC110N25T
IXTC200N075T
IXUC200N055
LKK47-06C5
Date Code
or
Test #
1808
1952
1634
1619
1709
1524
1611
SP0605
TP0703
SP0732
SP0742
SP0722
SP0722
1769
1590
1521
SP0721
SP0627
1594
1675
Voltage
[V]
1120
480
960
480
100
240
3000
640
800
800
800
480
480
640
640
640
200
60
44
480
Temp.
[°C]
125
125
125
125
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
150
Time
[hrs]
168
168
168
1000
1000
168
168
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
Sample
Size
20
20
20
20
20
6
10
30
30
30
30
30
30
20
20
20
30
30
20
20
Failures
Date Code
or
Test #
1941
1800
1576
2096
Voltage
[V]
640
800
800
800
Temp.
[°C]
125
125
125
125
Time
[hrs]
168
168
168
168
Sample
Size
20
20
20
20
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
Device Hours
[hrs]
3360
3360
3360
20000
20000
1008
1680
30000
30000
30000
30000
30000
30000
20000
20000
3360
30000
30000
20000
20000
Remark
I_DSS increased
TABLE 1J: Breakover Diode
#
Part Number
1
2
3
4
IXBOD1-08
IXBOD1-09
IXBOD1-10
IXBOD1-10
IXYS Semiconductor GmbH
10
0
0
0
0
Device Hours
[hrs]
3360
3360
3360
3360
Remark
HTGB (Tables 2A .. 2C)
TABLE 2A: MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1
IXBH42N170
TK0734
16
2
IXDN75N120
1606
16
3
IXEH25N120D1
1757
16
4
IXEH40N120D1
1482
16
5
IXER35N120D1
1950
16
6
IXFA7N80P
K533
16
7
IXFB100N50P
SP0737
16
8
IXFB44N100P
SP0721
16
9
IXFH12N120P
TJ1041E
16
10 IXFH15N100P
SK0636
16
11 IXFH20N100P
SP0716
16
12 IXFH26N60Q
SK0604
16
13 IXFK21N100Q
SP0737
16
14 IXFK44N55Q
SP0737
16
15 IXFL100N50P
SP0549
16
16 IXFL60N80P
SP0605
16
17 IXFL82N60P
SP0550
16
18 IXFP12N50PM
K550
16
19 IXFQ14N80P
SK0709
16
20 IXFR12N100Q
TP0703
16
21 IXFR14N100Q2
SP0732
16
22 IXFR26N100P
TJ1159E
16
23 IXFX73N30Q
SK0613
16
24 IXFX90N30
SK0613
16
25 IXGA42N30C3
K732
16
26 IXGA60N30C3
K732
16
27 IXGH100N30C3
SK0644
16
28 IXGH120N30C3
SK0638
16
29 IXGH1889
TP0736
16
30 IXGH20N170P
K0716E1
20
31 IXGH28N60B3
SK0608
16
32 IXGH30N120B3
TP0606
16
33 IXGH48N60B3
SK0607
16
34 IXGH64N60B3
SK0608
16
35 IXGH72N60B3
SK0608
16
36 IXGH85N30C3
SK0644
16
37 IXGN200N60A2
SP0723
16
38 IXGP120N33TBM-A
K723
16
39 IXGP24N120C3
K0652
16
40 IXGP50N33TC
K0652
16
41 IXGP70N33TBM-A
K726
16
42 IXGP90N33TBM-A
K06251
16
43 IXGQ120N30TCD1
SK0631
16
44 IXGQ120N33TCD1
SK0639
16
45 IXGQ150N30TCD1
SK0631
16
46 IXGQ150N33TCD1
SK0639
16
47 IXGQ160N30PB
SK0601
16
48 IXGQ160N30PB
SK0601
16
49 IXGQ160N30PB
SK0601
16
50 IXGQ180N30TCD1
SK0632
16
51 IXGQ180N33TB
SK0711
16
52 IXGQ180N33TC
SK0649
16
53 IXGQ180N33TCD1
SK0639
16
54 IXGQ200N30PB
SK0631
16
55 IXGQ240N30PB
SK0631
16
56 IXGQ70N33TB
SK0650
16
57 IXGQ85N33PCD1
SK0613
16
58 IXGQ85N33PCD1
SK0638
16
59 IXGQ90N27PB
SK0611
16
60 IXGQ90N27PB
SK0640
16
IXYS Semiconductor GmbH
Temp.
[°C]
125
150
150
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
168
168
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
11
Sample
Size
30
10
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
13
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
27
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
1680
3360
3360
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
13000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
27000
30000
30000
30000
Remark
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
61 IXGQ90N30TCD1
SK0631
16
62 IXGQ90N33TB
SK0651
16
63 IXGQ90N33TC
SK0649
16
64 IXGQ90N33TCD1
SK0639
16
65 IXGQ90N33TCD1
SK0728
16
66 IXGQ90N33TCD4
SK0721
16
67 IXGR120N60C2
SP0722
16
68 IXGR40N60C2D1
SP0635
16
69 IXGR48N60C3D1
SP0722
16
70 IXGX72N60B3H1
SP0739
16
71 IXKH70N60C5
1926
16
72 IXKP13N60C5M
1716
16
73 IXSH30N60B2D1
SP0506
16
74 IXSK40N60CD1
SK0722
16
75 IXTA36N30P
SK0603
16
76 IXTA36N30P
K0621
16
77 IXTA36N30P
K640
16
78 IXTA50N25T
SK0604
16
79 IXTA50N28T
K545
16
80 IXTA50N28T
K0606
16
81 IXTA50N28T
K634
16
82 IXTA50N28T
K640
16
83 IXTA60N20T
SK0601
16
84 IXTA76N25T
K0704
16
85 IXTC110N25T
SP0721
16
86 IXTC200N075T
SP0627
16
87 IXTH130N20T
SP0721
16
88 IXTH150N17T
SK0718
16
89 IXTH160N15T
SK0721
16
90 IXTH1N250
TP0638
16
91 IXTH30N50L
TK0738
16
92 IXTH76N25T
SP0613
16
93 IXTH86N25T
SP0638
16
94 IXTH8P50
SK0712
16
95 IXTK180N15P
SP0552
16
96 IXTN79N20
2052
16
97 IXTP08N100P
K625
16
98 IXTP08N120P
K0709
16
99 IXTP14N60PM
K631
16
100 IXTP14N60PM
K643
16
101 IXTP160N075T
K0707
16
102 IXTP17N30T
K648
16
103 IXTP18N60PM
K631
16
104 IXTP1R4N120P
K638
16
105 IXTP2R4N120P
K636
16
106 IXTP32N20T
K647
16
107 IXTP36N15T
K648
16
108 IXTP36N25T
K636
16
109 IXTP36N30T
K641
16
110 IXTP44N25T
K636
16
111 IXTP50N25T
K738
16
112 IXTP56N15T
K636
16
113 IXTP62N25T
K648
16
114 IXTP74N15T
K636
16
115 IXTP76N075T
K640
16
116 IXTP76N075T
K726
16
117 IXTP76N075T
SS0728
16
118 IXTP8N50P
K646
16
119 IXTP8N50P
AK732
16
120 IXTP90N15T
K647
16
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
12
Sample
Size
30
30
30
30
20
30
30
30
30
30
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
20000
30000
30000
30000
30000
30000
3360
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
121 IXTQ182N055T
SK0612
16
122 IXTQ182N055T
SK0612
16
123 IXTQ22N50P
SS0633
16
124 IXTQ22N60P
SK0604
16
125 IXTQ26N50P
SK0604
16
126 IXTQ28N15P
SK0653
16
127 IXTQ36P15P
SK0652
16
128 IXTQ76N25T
SK0613
16
129 IXTQ82N25T
SK0514
16
130 IXTQ82N25T
SK0603
16
131 IXTQ88N28T
SK0641
16
132 IXTQ88N30P
SK0605
16
133 IXTQ88N30T
SK0638
16
134 IXTQ96N20P
SS0631
16
135 IXTQ96N25T
SK0648
16
136 IXTT88N30P
SP0626
16
137 IXTV18N60PS
SP0636
16
138 IXTV230N085TS
SP0629
16
Temp.
[°C]
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
500
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 GWM100-01X1SL
1965
1720
2 GWM120-0075P3SL
3 MDI300-12A4
1555
4 MDI75-12
1931
5 MIAA20WD600TMH
1844
6 MII300-12A4
2012
7 MII400-12E4
1741
8 MII75-12A3
1541
1992
9 MIXA15WB1200TED
10 MIXA35WB1200TED
1991
11 MUBW15-12A6K
1553
12 MUBW50-12E8
1469
13 MWI30-06A7T
1635
14 MWI30-06A7T
2069
15 VII130-06P1
2025
Voltage
[V]
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
Temp.
[°C]
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
1000
126
168
1000
168
168
168
1000
1000
168
168
168
168
168
Sample
Size
10
80
10
10
10
10
10
10
5
5
10
10
10
10
10
Failures
Voltage
[V]
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
Temp.
[°C]
150
150
150
150
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
1000
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
10
80
20
20
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
15000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
Device Hours
[hrs]
1680
80000
1260
1680
10000
1680
1680
1680
5000
5000
1680
1680
1680
1680
1680
Remark
Device Hours
[hrs]
1680
80000
3360
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 2C: ISOPLUS
#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Part Number
GWM100-01X1SL
GWM120-0075P3SL
IXER35N120D1
IXER35N120D1
IXFL100N50P
IXFL60N80P
IXFL82N60P
IXFR12N100Q
IXFR14N100Q2
IXFR26N100P
IXGR120N60C2
IXGR40N60C2D1
IXGR48N60C3D1
IXTC110N25T
IXTC200N075T
IXYS Semiconductor GmbH
Date Code
or
Test #
1965
1720
1950
1950
SP0549
SP0605
SP0550
TP0703
SP0732
TJ1159E
SP0722
SP0635
SP0722
SP0721
SP0627
13
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
POWER CYCLE (Tables 3A ..3H)
TABLE 3A: MOSFET/IGBT single device
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 IXBH9N160G
1759
125
2 IXDH30N120D1
1940
125
3 IXFN82N60P
SP0551
4 IXFX73N30Q
SK0613
5 IXFX90N30
SK0613
6 IXGQ85N33PCD1
SK0614
7 IXGQ90N27PB
SK0611
8 IXKH20N60C5
1987
125
9 IXKP13N60C5M
1716
125
10 IXSH30N60B2D1
SP0506
11 IXTP14N60PM
K643
12 IXTP18N60PM
K631
13 IXTQ26N50P
SK0604
14 IXTQ76N25T
SK0613
15 IXTQ96N20P
SS0631
-
ΔΤ
[K]
80
80
100
100
100
100
100
80
80
100
50
50
100
100
100
Number
of
Cycles
2000
2000
10000
10000
10000
10000
10000
2000
10000
10000
10000
10000
10000
10000
10000
Sample
Size
20
20
24
24
24
24
24
20
20
24
24
24
24
24
24
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
40000
40000
240000
240000
240000
240000
240000
40000
200000
240000
240000
240000
240000
240000
240000
TABLE 3B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1960
1 GWM160-0055X1-SL
2 MIAA20WD600TMH
1844
3 MKI75-06A7
1464
4 MKI75-06A7T
1676
5 MKI75-06A7T
1772
6 MKI75-06A7T
1776
7 MUBW20-06A7
1735
Tj(max)
[°C]
150
125
125
125
125
125
125
ΔΤ
[K]
100
80
80
80
80
80
80
Number
of
Cycles
3000
10000
10000
10000
5000
10000
7130
Sample
Size
80
9
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
240000
90000
100000
100000
50000
100000
71300
TABLE 3C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC162-12io1
2056
2 MCC56-14io1
1472
3 MCD40-16io6
1474
4 MDD95
1875
5 MDD95-18N1
1971
Tj(max)
[°C]
125
125
125
125
125
ΔΤ
[K]
80
80
80
80
80
Number
of
Cycles
10000
20000
5000
30000
20000
Sample
Size
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
100000
200000
50000
300000
200000
TABLE 3D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 VBO19-16DT1
2011
125
2 VBO40-16NO6
1860
125
3 VUO121-16NO1
2071
125
4 VUO190-18NO7
2026
125
5 VUO80-16
1456
125
ΔΤ
[K]
80
80
80
80
80
Number
of
Cycles
5000
5000
20000
2000
5000
Sample
Size
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
50000
50000
200000
20000
50000
IXYS Semiconductor GmbH
14
Remark
Remark
Remark
Remark
TABLE 3E: FRED
Date Code
or
Test #
1699
1755
1928
1440
1599
1955
1930
1736
1633
2021
Tj(max)
[°C]
125
125
145
145
150
145
125
150
125
145
ΔΤ
[K]
80
80
100
105
105
100
80
105
80
100
Number
of
Cycles
2000
2000
2000
2000
2000
2000
2000
2000
5000
2000
Sample
Size
20
20
20
20
20
20
20
20
10
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
40000
40000
40000
40000
40000
40000
40000
40000
50000
40000
Date Code
or
Test #
2018
1856
1723
1838
1873
1575
Tj(max)
[°C]
145
125
140
140
150
125
ΔΤ
[K]
100
80
100
100
105
80
Number
of
Cycles
2000
4000
8572
8572
2000
2000
Sample
Size
20
10
77
77
20
20
Failures
Device Cycles
0
0
0
0
0
0
80000
40000
660044
660044
40000
40000
TABLE 3G: Thyristor/Diode single device
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 CS30-16io1
2009
125
2 CS35-14
2008
125
3 CS35-14io4
1473
125
4 CS45-12io1
1601
125
5 CS8-12io2
1605
125
6 DSA1-18D
1435
150
7 DSA15IM45IB
1621
125
8 DSA75-16B
1859
150
9 DSI45-08A
1760
150
ΔΤ
[K]
80
80
80
80
80
105
80
105
105
Number
of
Cycles
2000
2000
2000
5000
2000
2000
4000
2000
2000
Sample
Size
20
10
10
20
10
20
20
10
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
40000
20000
20000
100000
20000
40000
80000
20000
40000
ΔΤ
[K]
80
100
Number
of
Cycles
2000
3000
Sample
Size
20
80
Failures
Device Cycles
0
0
40000
240000
#
Part Number
1
2
3
4
5
6
7
8
9
10
DH60-18A
DSEC30-02A
DSEI120-12A
DSEI60-02A
DSEI60-12A
DSEP12-12A
DSEP15-12CR
DSEP29-06A
DSEP2x61-06A
DSEP60-12A
Remark
TABLE 3F: Schottky Diode
#
Part Number
1
2
3
4
5
6
DSS16-0045A
DSS2x160-01A
DSS6-015AS
DSS6-015AS
DSSk60-0045A
DSSK80-006B
Remark
Remark
TABLE 3H: ISOPLUS
#
Part Number
1
2
DSEP15-12CR
GWM160-0055X1
IXYS Semiconductor GmbH
Date Code
or
Test #
1930
1960
Tj(max)
[°C]
125
150
15
Remark
TEMPERATURE CYCLE (Tables 4A ..4J)
TABLE 4A: MOSFET/IGBT single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 FII50-12EL
1534
-55
2 IXBH9N160G
1574
-55
3 IXDD404SI
1913
-55
4 IXDD404SIA
1695
-55
5 IXDN75N120
1606
-40
6 IXKC13N80C
1769
-55
7 IXKC25N80C
1590
-55
8 IXKH20N60C5
2013
-40
9 IXKH70N60C5
1926
-40
10 IXKP10N60C5M
1693
-40
11 IXKP13N60C5M
1716
-55
12 IXKT70N60C5
2068
-55
13 IXUC200N055
1802
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
100
50
1000
500
20
100
100
50
50
100
100
1000
90
Sample
Size
20
20
83
30
10
20
20
20
20
20
20
20
50
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
2000
1000
83000
15000
200
2000
2000
1000
1000
2000
2000
20000
4500
TABLE 4B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MDI300-12A4
1555
2 MIAA20WD600TMH
1844
3 MII400-12E4
1741
4 MII75-12A3
1541
5 MIXA15WB1200TED
1992
6 MKI75-06A7T
1562
7 MKI75-06A7T
1724
8 MKI75-06A7T
1724
9 MKI80-06T6K
1818
10 MUBW15-12A7
1466
11 MUBW25-12T7
1896
12 MUBW75-12T8
1731
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
100
50
50
100
50
50
50
100
50
100
100
Sample
Size
10
9
10
10
10
10
10
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
500
900
500
500
1000
500
500
500
1000
500
1000
1000
IXYS Semiconductor GmbH
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
16
Remark
Remark
TABLE 4C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC162-14
1816
2 MCC162-14io1
1544
3 MCC162-14io1
1629
4 MCC200-14
1717
5 MCC21-16
1821
6 MCC26-14
2035
7 MCC26-14io1
1641
8 MCC310-12io1
1545
9 MCC310-14io1
1627
10 MCC44-12io1
1540
11 MCC44-16io1
2048
12 MCC44-16io8
1864
13 MCC56-12io1
1449
14 MCC72-14io1
2007
15 MCC95-14io1
1788
16 MCD162-16io1
1884
17 MCD200-14
2010
18 MCD250/16
2059
19 MCD56-16io1
1646
20 MCO600-16io1
1680
21 MDD26-18N1
1749
22 MDD56-16io1
1865
23 MDD56-18N1
2080
24 MDD95-22
1875
25 MDD95-16
1585
26 MDD95-18N1
1971
27 MDI300-12A4
1555
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
50
50
50
100
50
50
50
50
50
100
100
50
50
150
50
50
50
50
50
100
50
50
100
50
100
50
Sample
Size
10
10
10
10
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
20
10
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0
0
0
500
500
500
500
2000
500
500
500
500
500
1000
1000
500
500
1500
500
500
500
500
500
2000
500
500
1000
500
1000
500
TABLE 4D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Test #
1 MMO230-16
1543
2 MMO230-16iO7
1868
3 MMO74-12io6
1615
4 VBO19-16DT1
1648
5 VBO25-12nO2
1726
6 VBO25-12NO2
2005
7 VBO40-16NO6
1860
8 VBO40-16NO6
1860
9 VUB120-16
2034
10 VUB120-16NO2
1636
11 VUB72-16No1
1894
12 VUO36-12NO8
2024
13 VUO36-16
2036
14 VUO36-16nO8
1580
15 VUO80-16
1778
16 VUO82-16NO7
2085
17 VVY40-16io1
1679
18 VVZ40-14
1691
19 VW2x60-14
1443
20 VWO85-12
1570
Low
Temp.
[°C]
-40
-40
-55
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
125
Number
of
Cycles
150
50
300
50
50
50
50
20
50
50
50
50
150
10
100
10
50
100
50
50
Sample
Size
10
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1500
1000
3000
500
500
500
500
200
500
500
500
500
1500
100
1000
100
500
1000
500
500
IXYS Semiconductor GmbH
17
Remark
V_F increased
V_F increased
Remark
TABLE 4E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
DH60-18A
DHG10I600PM
DHH55-36N1F
DPG15I400PM
DPG60C300QB
DSEE29-06CC
DSEI120-12A
DSEI120-12A
DSEI2x121-02A
DSEI2x31-06C
DSEI60-06A
DSEP15-06A
DSEP15-12CR
DSEP25-16AR
DSEP2x25-12C
DSEP30-06BR
DSEP30-06CR
DSEP8-03AS
DSEP8-12A
DSEP8-12A
DSEP9-06CR
MEE250-12I
MEE300-06DA
MEK300-06
MEO450-12DA
Date Code
or
Test #
1568
1685
1604
1770
1909
1771
1538
1756
2042
1563
1804
2020
1514
1712
1468
1700
2015
1738
1438
1956
1437
1887
2064
1737
2000
Low
Temp.
[°C]
-40
-55
-55
-55
-55
-55
-40
-40
-40
-40
-40
-55
-55
-40
-40
-55
-55
-40
-55
-55
-55
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
100
100
100
100
100
50
50
20
20
50
50
50
50
50
50
50
100
50
50
50
50
100
50
100
Sample
Size
20
20
40
20
20
20
20
20
10
10
20
20
20
20
10
20
20
20
20
20
20
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1000
2000
4000
2000
2000
2000
1000
1000
200
200
1000
1000
1000
1000
500
1000
1000
2000
1000
1000
1000
500
1000
500
1000
Date Code
or
Test #
1907
1906
1674
1622
2018
1709
1856
1985
1596
1596
1492
1723
1807
1982
1557
1457
1591
1573
1575
Low
Temp.
[°C]
-55
-55
-55
-55
-55
-55
-40
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
100
100
100
100
50
100
100
50
1000
1000
500
1000
50
50
50
50
200
50
50
Sample
Size
20
20
20
20
20
20
10
10
80
80
77
77
20
20
20
20
40
20
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2000
2000
2000
2000
1000
2000
1000
500
80000
80000
38500
77000
1000
1000
1000
1000
8000
1000
1000
Remark
TABLE 4F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
DSA120C150QB
DSA30C100PN
DSA90C200HB
DSB15IM45IB
DSS16-0045A
DSS20-01AC
DSS2x160-01A
DSS2x61-01A
DSS31-0045A
DSS31-0045A
DSS31-0045A SN
DSS6-015AS
DSSK30-01A
DSSK38-0025B
DSSK40-0015B
DSSK60-0045B
DSSK60-015AR
DSSK60-015AR
DSSK80-006B
IXYS Semiconductor GmbH
18
Remark
TABLE 4G: Thyristor/Diode single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 CS20-22-moF1
1888
-55
2 CS22-08io1M
1953
-40
3 CS23-12io2
1959
-40
4 CS30-12io1
1977
-40
5 CS30-16io1DCSN
1820
-40
6 CS35-14io4
1473
-40
7 CS45-16io1
1598
-40
8 CS60-16io1
1830
-40
9 CS8-12io2
1605
-40
10 DSA1-16D
2023
-40
11 DSA17-16A
1703
-40
12 DSA35-16A
1566
-40
13 DSAI35-16A
2067
-40
14 DSAI75-16B
1858
-40
15 DSI45-12A
1805
-40
16 DSP25-16
1564
-40
17 DSP25-16A
1639
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
50
20
50
100
20
50
100
20
50
20
20
20
20
50
50
50
Sample
Size
30
20
20
20
20
10
20
20
10
20
20
10
10
10
20
20
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1500
1000
400
1000
2000
200
1000
2000
200
1000
400
200
200
200
1000
1000
1000
Remark
TABLE 4H: ISOPLUS
Date Code
or
Test #
1 CS20-22-moF1
1888
2 DHH55-36N1F
1604
3 DSEE29-06CC
1771
4 DSEP15-12CR
1514
5 DSEP25-16AR
1712
6 DSEP30-06BR
1700
7 DSEP30-06CR
2015
8 DSEP9-06CR
1437
9 DSS20-01AC
1709
10 DSSK60-015AR
1573
11 DWP25-16/18AL
1842
12 FII50-12EL
1534
13 GWM120-0075P3SL
1720
1960
14 GWM160-0055X1-SL
15 GWM70-01P2
1448
16 IXKC13N80C
1769
17 IXKC25N80C
1590
18 IXUC200N055
1802
Low
Temp.
[°C]
-55
-55
-55
-55
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
100
100
50
50
50
50
50
100
50
100
100
1000
1000
1000
100
100
90
Sample
Size
30
40
20
20
20
20
20
20
20
20
22
20
80
80
10
20
20
50
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1500
4000
2000
1000
1000
1000
1000
1000
2000
1000
2200
2000
80000
80000
10000
2000
2000
4500
TABLE 4J: Breakover Diode
Date Code
# Part Number
or
Test #
1 IXBOD1-08
1941
2 IXBOD1-09
1800
3 IXBOD1-10
1576
4 IXBOD1-10
2096
Low
Temp.
[°C]
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
Number
of
Cycles
50
50
50
50
Sample
Size
20
20
20
20
Failures
Device Cycles
0
0
0
0
1000
1000
1000
1000
#
Part Number
IXYS Semiconductor GmbH
19
Remark
Remark
HUMIDITY TEST (Tables 5A, 5H..5J)
TABLE 5A: MOSFET/IGBT single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 IXDD404SIA
1695
121
2 IXKH24N60C5
2066
121
3 IXKP13N60C5M
1716
85
4 IXKP13N60C5M
1687
121
Rel. H.
[%]
100
100
85
100
Time
[hrs]
96
48
1000
96
Sample
Size
30
20
20
10
Failures
0
0
0
0
Device Hours
[hrs]
2880
960
20000
960
Remark
Device Hours
[hrs]
1920
768
1920
960
960
960
1920
1680
Remark
Device Hours
[hrs]
1920
20000
1920
1920
20000
1920
1920
7392
7392
Remark
TABLE 5E: FRED
Date Code
or
Test #
1908
1446
1607
1535
1536
1927
1837
1742
Temp.
[°C]
121
121
121
121
121
121
121
85
Rel. H.
[%]
100
100
100
100
100
100
100
85
Time
[hrs]
96
96
96
48
48
48
96
168
Sample
Size
20
8
20
20
20
20
20
10
Failures
Date Code
or
Test #
1907
1835
1835
1974
1836
1836
1622
1492
1723
Temp.
[°C]
121
85
121
121
85
121
121
121
121
Rel. H.
[%]
100
85
100
100
85
100
100
100
100
Time
[hrs]
96
1000
96
96
1000
96
96
96
96
Sample
Size
20
20
20
20
20
20
20
77
77
Failures
TABLE 5G: Thyristor/Diode single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 CS45-12io1
1754
121
2 DSDI60-14A
1806
121
3 DSI45-16A
1976
121
Rel. H.
[%]
100
100
100
Time
[hrs]
48
48
96
Sample
Size
20
20
20
Failures
#
Part Number
1
2
3
4
5
6
7
8
DPG20C300PN
DPG60C400QB
DSEI2x61-12B
DSEI8-06AS
DSEP30-06BR
DSEP30-12CR
DSEP8-03AS
MEO450-12DA
0
0
0
0
0
0
0
0
TABLE 5F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
DSA120C150QB
DSA20C100PB
DSA20C100PB
DSA20C60PN
DSA90C200HB
DSA90C200HB
DSB15IM45IB
DSS31-0045A SN
DSS6-015AS
0
0
0
0
0
1
0
0
0
0
0
0
I_R increased
Device Hours
[hrs]
960
960
1920
Remark
Device Hours
[hrs]
960
960
Remark
Device Hours
[hrs]
960
960
960
960
Remark
TABLE 5H: ISOPLUS
Date Code
or
Test #
1536
1927
Temp.
[°C]
121
121
Rel. H.
[%]
100
100
Time
[hrs]
48
48
Sample
Size
20
20
Failures
TABLE 5J: Breakover diode
Date Code
# Part Number
or
Test #
1 IXBOD1-08
1941
2 IXBOD1-09
1800
3 IXBOD1-10
1576
4 IXBOD1-10
2096
Temp.
[°C]
121
121
121
121
Rel. H.
[%]
100
100
100
100
Time
[hrs]
48
48
48
48
Sample
Size
20
20
20
20
Failures
#
Part Number
1
2
DSEP30-06BR
DSEP30-12CR
IXYS Semiconductor GmbH
20
0
0
0
0
0
0