Efficiency Through Technology
RELIABILITY REPORT
2009
Power Semiconductor Devices
January 2006 - December 2008
IXYS Corporation
1590 Buckeye Dr.
Milpitas CA 95035-7418
USA
Published March 2009
IXYS Semiconductor GmbH
Edisonstrasse 15
D-68623 Lampertheim
Germany
Humidity Test
QUALITY AND RELIABILITY
Failure Modes: Degradation of electrical leakage
characteristics due to moisture penetration into plastic
packages.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, IGSS, IGES,
VTH.
IXYS is committed to setting a new standard for
excellence in Power Semiconductors. Reflecting our
dedication to industry leadership in the manufacture of
medium to high power devices, reliability has
assumed a primary position in raw material selection,
design, and process technology.
Reliability utilizes information derived from applied
research, engineering design, analysis of field
applications and accelerated stress testing and
integrates this knowledge to optimize device design
and manufacturing processes.
All areas that impact reliability have received
considerable attention in order to achieve our goal to
be the # 1 Reliability Supplier of Power
Semiconductor products. We believe IXYS products
should be the most reliable components in your
system.
We have committed significant resources to
continuously improve and optimize our device design,
wafer fab processes, assembly processes and test
capabilities. As a result of this investment, IXYS has
realized a dramatic improvement in reliability
performance on all standardized tests throughout the
product line.
Excellence in product reliability is “built-in”, not testedin. Moreover, it requires a total systems approach,
involving all parties: from design to raw materials to
manufacturing.
In addition to qualifying new products released to the
market, life and environmental tests are periodically
performed on standard products to maintain feedback
on assembly and fabrication performance to assure
product reliability. Further information on reliability of
power devices is provided on www.ixys.com.
Power Cycle
Failure Modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling can
cause
thermal
and
electrical
performance
degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS,
ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM,
VRRM.
TERMS IN TABLES
SUMMARY TABLES 1 AND 2:
AF: acceleration factor
AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k }
(1)
Ea: activation energy; @ HTRB Ea = 1.0 eV
@ HTGB Ea = 0.4 eV
-5
k: Boltzmann’s constant 8.6·10 eV/K
T1: abs. application junction temperature (273+Tj) K
T2: abs. test junction temperature (273+Tj) K
UCL: upper confidence limit (60%)
Total Failures @ 60% UCL:
RELIABILITY TESTS
High Temperature Reverse Bias (HTRB)
N = r + dr
Failure Modes: Gradual degradation of break-down
characteristics due to presence of foreign materials
and polar/ionic contaminants disturbing the electric
field termination structure.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, VTH.
(2)
r: number of failed devices
dr: additional term, depending on both r and UCL
MTTF: Mean Time To Failures = 1/Failure Rate
9
FIT: 1 FIT = 1 failure / 10 hrs
High Temperature Gate Bias (HTGB)
TABLES 3:
Failure Modes: Rupture of the gate oxide due to
localized thickness variations, structural anomalies,
particulates in the oxide, channel inversion due to
presence of mobile ions in the gate oxide.
Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES.
∆T: max Tj - min Tj during Test
DEFINITION OF FAILURE
Failure criteria are defined according to IEC 60747
standard series
Temperature Cycle
Failure modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling,
causing thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF.
2
Summary of Tables 1A - 1H: HTRB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 1A
Table 1B
Table 1C
Table 1D
Table 1E
Table 1F
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
discrete device *)
Module
Module
Rec. Bridge
Diode
discrete device
970
58
252
7392
6
7,3
15355
919
20
205
1
2,0
25940
1553
20
210
1
2,0
18312
1097
20
200
0
0,92
1615
97
45
815
0
0,92
2440
146
29
720
1
2,0
10944
655
18
320
2
2,1
7523680
118
1965
130254
7
124
77100
4
73
50240
6
104
569668
71
1180
819542
47
781
191888
10
174
Summary of Table 2A - 2C: HTGB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
IXYS Semiconductor GmbH
Table 2A
Table 2B
MOSFET/IGBT
MOSFET/IGBT
discrete device
Module
152
49
207
6107
0
0,92
4250
1371
20
260
0
0,92
6034120
749
2321
216460
27
83
3
Table 1G
Summary of Tables 3A - 3H: Power Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 3A
Table 3B
Table 3C
Table3D
Table 3E
Table 3F
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Table 3G
Thyr./Diode
discrete device
Module
Module
Rec. Bridge
Diode
discrete device
20
464
0
4160000
4
109
0
630000
8
80
4
1050000
8
80
2
490000
18
310
1
710000
9
284
1
1640088
13
200
0
500000
Table 4G
Summary of Tables 4A - 4J: Temperature Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 4A
Table 4B
Table 4C**
Table4D
Table 4E
Table 4F
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
discrete device
Module
Module
Rec. Bridge
Diode
discrete device
17
350
1
45200
14
149
0
10900
33
340
5
25000
20
210
0
10900
38
662
1
45000
24
724
0
307000
26
440
2
20400
Table 5G
** Max. storage temperature specified = 125°C. For accelleration temperature cycling conditions Tmax = 150°C applied
Summary of Tables 5A, 5E - 5J: Humidity Test
Table 5A
MOSFET/IGBT
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Hours
IXYS Semiconductor GmbH
Table 5B
IGBT/Mos
Table 5C
Table5D
Table 5E
Table 5F
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Diode
discrete device
6
234
0
21504
4
80
0
4800
discrete device
Module
Module
Rec. Bridge
10
200
0
45840
4
50
0
25040
6
63
1
13080
5
50
2
15520
4
17
320
0
27840
HTRB (Tables 1A .. 1J)
TABLE 1A: MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 IXBH16N170
TP0619
960
2 IXBH40N160
1513
1280
3 IXBH6N170
TP0806
960
4 IXBH9N160G
2446
1280
5 IXCP01N90E
K0816
720
6 IXDH20N120D1
2065
960
7 IXEH25N120D1
2208
960
8 IXEH40N120D1
1925
960
9 IXER60N120
2306
960
10 IXFA7N80P
K533
640
11 IXFB100N50P
SP0737
460
12 IXFB170N30P
SP0824
240
13 IXFB44N100P
SP0721
800
14 IXFH12N100P
SK0733
800
15 IXFH12N120P
SP0715
960
16 IXFH14N100Q2
SK0834
800
17 IXFH150N17T
SK0841
136
18 IXFH15N100P
SK0636
800
19 IXFH20N100P
SP0716
800
20 IXFH20N60
SK0544
480
21 IXFH22N50P
N/A
400
22 IXFH24N80P
SP0824
640
23 IXFH26N50
TP0749
400
24 IXFH26N50
SS0846
400
25 IXFH26N60Q
SK0604
480
26 IXFH69N30P
SK0527
240
27 IXFK120N20
SK0834
160
28 IXFK21N100Q
SP0737
800
29 IXFK220N15P
SP0826
120
30 IXFK44N55Q
SP0737
440
31 IXFL60N80P
SP0605
640
32 IXFN82N60P
TJ0645E
480
33 IXFP12N50PM
K550
400
34 IXFQ14N80P
SK0709
640
35 IXFR12N100Q
TP0703
800
36 IXFR14N100Q2
SP0732
800
37 IXFR16N120P
SP0747
960
38 IXFR26N100P
SP0742
800
39 IXFX48N50Q
SS0846
400
40 IXFX48N50Q
ZP0545
400
41 IXFX73N30Q
SK0613
240
42 IXFX80N50P
sp0712
400
43 IXFX90N30
SK0613
240
44 IXGA42N30C3
K732
240
45 IXGA60N30C3
K732
240
46 IXGH100N30C3
SK0644
240
47 IXGH10N170
TP0817
960
48 IXGH120N30C3
SK0638
240
49 IXGH12N100
TP0836
800
50 IXGH17N100
TP0848
800
51 IXGH17N100
TP0848
800
52 IXGH17N100
TP0848
800
53 IXGH20N100
TP0835
800
54 IXGH20N170P
K0716E1
960
55 IXGH20N170P
TP0632
960
56 IXGH24N120C3H1
TK0650
960
57 IXGH25N250
TJ0600E
960
58 IXGH28N60B3D1
SP0732
480
59 IXGH2N100
TP0835
800
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
168
1000
168
1000
168
168
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
5
Sample
Size
30
20
30
20
30
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
3360
30000
3360
30000
3360
3360
3360
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
V_GE(th)
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
60 IXGH30N120B3
TP0606
960
61 IXGH32N100A3
TK0720
800
62 IXGH32N170
TP0831
960
63 IXGH36N60B3D1
SP0732
480
64 IXGH48N60B3
SK0607
480
65 IXGH48N60C3
SK0732
480
66 IXGH48N60C3D1
SP0733
480
67 IXGH50N60B
SK0634
480
68 IXGH60N60C3
SK0732
480
69 IXGH64N60B3
SK0608
480
70 IXGH72N60B3
SK0608
480
71 IXGH72N60C3
SK0751
480
72 IXGH85N30C3
SK0644
240
73 IXGH8N100
TP0824
800
74 IXGH8N100
TP0826
800
75 IXGH8N100
TP0835
800
76 IXGH8N100
N/N
800
77 IXGK28N140B3H1
TP0651
960
78 IXGN200N60A2
SP0723
480
79 IXGN60N60C2D1
SP0745
480
80 IXGP120N33TBM-A
K723
264
81 IXGP50N33TBM-A
K0651
264
82 IXGP50N33TC
K0652
264
83 IXGP70N33TBM-A
K726
264
84 IXGP70N33TBM-A
K728
264
85 IXGP90N33TB
K06251
264
86 IXGP90N33TBM-A
K06251
264
87 IXGQ120N30TCD1
SK0631
240
88 IXGQ120N33TB
SK0651
264
89 IXGQ120N33TCD1
SK0639
264
90 IXGQ150N30TCD1
SK0631
240
91 IXGQ150N33TCD1
SK0639
264
92 IXGQ160N30PB
SK0601
240
93 IXGQ160N30PB
SK0601
240
94 IXGQ160N30PB
SK0601
240
95 IXGQ160N30PB
SK0601
240
96 IXGQ180N33TB
SK0711
264
97 IXGQ180N33TC
SK0649
264
98 IXGQ180N33TCD1
SK0639
264
99 IXGQ200N30PB
SK0631
240
100 IXGQ240N30PB
SK0631
240
101 IXGQ240N30PB
SK0631
240
102 IXGQ240N30PB
SK0631
240
103 IXGQ240N30PB
SK0631
240
104 IXGQ70N33TB
SK0650
264
105 IXGQ85N33PCD1
SK0613
264
106 IXGQ85N33PCD1
SK0638
264
107 IXGQ86N30PB
K0543
240
108 IXGQ90N27PB
SK0621
216
109 IXGQ90N27PB
SK0640
216
110 IXGQ90N30TCD1
SK0631
240
111 IXGQ90N33TC
SK0649
264
112 IXGQ90N33TCD1
SK0639
264
113 IXGQ90N33TCD1
SK0728
264
114 IXGR120N60C2
SP0722
480
115 IXGR48N60C3D1
SP0722
480
116 IXGR60N60C2C1
SP0850
480
117 IXGX120N60B
SP0719
480
118 IXGX120N60B3
SP0806
480
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
6
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
60
30
30
30
30
30
30
30
30
30
30
30
30
27
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
60000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
27000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
119 IXGX72N60B3H1
SP0739
480
120 IXGX72N60B3H1
SP0809
480
121 IXKC13N80C
1769
640
122 IXKC25N80C
1590
640
123 IXKH20N60C5
1631
480
124 IXKH35N60C5
2098
480
125 IXKH35N60C5
2245
480
126 IXKH35N60CS
1984
480
127 IXKH35N60CS
1986
480
128 IXKN75N60C
2121
480
129 IXKP10N60C5M
1693
480
130 IXKP13N60C5M
1716
480
131 IXKP20N60C5
1653
480
132 IXKP24N60C5
1671
480
133 IXKR25N80C
1521
640
134 IXKT70N60C5
2068
480
135 IXSH30N60B2D1
SP0506
480
136 IXSK40N60CD1
SK0722
480
137 IXTA06N120P
K832
960
138 IXTA180N10T
K746
80
139 IXTA1N80
K707
640
140 IXTA36N30P
SK0603
240
141 IXTA36N30P
K0621
240
142 IXTA36N30P
K640
240
143 IXTA50N25T
K545
200
144 IXTA50N28T
K0606
224
145 IXTA50N28T
K634
224
146 IXTA50N28T
K640
224
147 IXTA60N20T
K545
160
148 IXTA60N20T
SK0601
160
149 IXTA75N10P
K0531
80
150 IXTA76N25T
K0704
200
151 IXTC110N25T
SP0721
200
152 IXTC200N075T
SP0627
60
153 IXTD200No55T2V5
2347
44
154 IXTH03N100P
TP0844
800
155 IXTH05N100
TP0829
800
156 IXTH05N100
TP0843
800
157 IXTH08N100P
TP0848
800
158 IXTH10P50P
SP0723
400
159 IXTH110N25T
SP0832
200
160 IXTH130N20T
SP0721
160
161 IXTH150N17T
SK0718
140
162 IXTH160N075T
K751
60
163 IXTH160N15T
SK0721
120
164 IXTH170N075T2
SP0829
60
165 IXTH1N80P
TP0604
640
166 IXTH220N04T2
SP0743
32
167 IXTH30N50L
TK0738
400
168 IXTH3N100P
TP0639
800
169 IXTH76N25T
SP0613
200
170 IXTH86N25T
SP0638
200
171 IXTH8P50
SK0712
400
172 IXTK102N30P
SP0839
240
173 IXTK180N15P
SP0552
120
174 IXTK250N10
SP0721
80
175 IXTK34N80
SP0546
640
176 IXTK34N80
SP0603
640
177 IXTK34N80
SP0603
640
178 IXTN17N120L
TP0813
960
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
150
150
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
168
168
168
1000
1000
1000
800
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
7
Sample
Size
30
30
20
20
20
20
20
20
20
10
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
25
30
30
20
70
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2
0
0
0
0
0
0
0
0
0
0
0
3
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
Remark
[hrs]
30000
30000
20000
20000
20000
20000
20000
3360
3360
1680
20000
20000
20000
16000
3360
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
no deviations after 168h
30000
30000
30000
30000
30000
30000
25000
30000
30000
20000
70000
30000
no deviations after 168h
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
179 IXTP05N100M
K0829
800
180 IXTP06N120P
K833
960
181 IXTP08N100P
K625
800
182 IXTP08N120P
K0709
960
183 IXTP110N055T2
K0745
44
184 IXTP130N10T
K834
80
185 IXTP14N60PM
K631
480
186 IXTP14N60PM
K643
480
187 IXTP160N075T
K0707
60
188 IXTP170N075T2
K0811
60
189 IXTP17N30T
K648
240
190 IXTP18N60PM
K631
480
191 IXTP18P10T
K751
80
192 IXTP1N100
K820
800
193 IXTP1N100P
K636
800
194 IXTP1R4N100P
K636
800
195 IXTP1R4N120P
K638
960
196 IXTP200N055T2
K0750
44
197 IXTP24P085T
K0750
68
198 IXTP2R4N120P
K636
960
199 IXTP32N20T
K647
160
200 IXTP36N15T
K648
120
201 IXTP36N25T
K636
200
202 IXTP36N30P
K841
240
203 IXTP36N30P
SS0842
240
204 IXTP36N30T
K641
240
205 IXTP44N25T
K636
200
206 IXTP50N25T
K738
200
207 IXTP52P10P
K746
80
208 IXTP56N15T
K636
120
209 IXTP62N25T
K648
200
210 IXTP74N15T
K636
120
211 IXTP76N075T
K640
60
212 IXTP76N075T
K726
60
213 IXTP76N075T
SS0728
60
214 IXTP8N50P
AK732
400
215 IXTP8N50P
K646
400
216 IXTP90N15T
K647
120
217 IXTP98N075T
K746
60
218 IXTQ140N10P
SK0807
80
219 IXTQ170N10P
SK0802
80
220 IXTQ182N055T
SK0612
44
221 IXTQ22N50P
SS0633
400
222 IXTQ22N60P
SK0539
480
223 IXTQ22N60P
SK0604
480
224 IXTQ22N60P
SK0609
480
225 IXTQ22N60P
SK0608
480
226 IXTQ22N60P
SK0608
480
227 IXTQ22N60P
SK0609
480
228 IXTQ22N60P
SK0609
480
229 IXTQ26N50P
SK0604
400
230 IXTQ26P20P
SK0746
160
231 IXTQ28N15P
SK0653
120
232 IXTQ30N50L2
TK0813
400
233 IXTQ36P15P
SK0652
120
234 IXTQ44N30T
SK0629
240
235 IXTQ44N50P
K751
400
236 IXTQ64N25P
SK0535
200
237 IXTQ74N20P
SK0515
160
238 IXTQ75N10P
SK0838
80
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
8
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
239 IXTQ76N25T
SK0613
200
240 IXTQ82N25T
SK0603
200
241 IXTQ88N28T
SK0641
224
242 IXTQ88N28T
SK0545
224
243 IXTQ88N30P
SK00742
240
244 IXTQ88N30P
SK0605
240
245 IXTQ88N30T
SK0638
240
246 IXTQ96N20P
SS0631
160
247 IXTQ96N25T
SK0648
200
248 IXTT88N30P
SP0626
240
249 IXTV18N60PS
SP0636
480
250 IXTV230N085TS
SP0629
68
251 IXTX24N100
SK0824
800
252 IXUC200N055
1594
44
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
20
Failures
TABLE 1B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 GWM160-0055P3
1524
2 MIAA20WD600TMH
1844
3 MIAA20WD600TMH
1844
4 MID145-12A3
2031
5 MID145-12A3
2031
6 MIXA40WB1200TED
2294
7 MKI75-06A7T
1847
8 MKI80-06T6K
1818
9 MUBW15-12A6K
2295
10 MUBW15-12A6K
2348
11 MUBW35-12E7
1632
12 MUBW36-12E7
1898
13 MUBW50-12E8
2107
14 MUBW50-12T8
1777
15 MWI150-12T8T
1897
16 MWI30-06A7T
2069
17 MWI35-12T7T
2420
18 VMM85-02F
2204
19 VMO1600-02P
2123
20 VMO60-05F
1552
Voltage
[V]
240
1120
480
960
960
960
480
480
960
960
960
960
960
960
960
480
960
160
160
400
Temp.
[°C]
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
1000
1000
168
168
1000
168
168
1000
1000
168
1000
168
1000
1000
168
1000
168
1000
168
Sample
Size
6
10
10
10
10
20
10
10
10
10
10
10
9
10
10
10
10
10
10
10
Failures
TABLE 1C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC132-16io1
1509
2 MCC132-16io1
1980
3 MCC162-16io1
1593
4 MCC21-16io8
1812
5 MCC26-16io1
1539
6 MCC310-16
1696
7 MCC312-16
2235
8 MCC44-16io1
1747
9 MCC44-16io1
2006
10 MCC56-16io1
2200
11 MCC95-18
2427
12 MCC95-18
2429
13 MCC95-16io1
1701
14 MCC95-16io1
1862
15 MCC95-16io1
2081
16 MCD56-16io1
1587
17 MDD172-16n1
1554
18 MDD172-16n1
2344
19 MDD56-18
2323
20 MDD95-16
2032
Voltage
[V]
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1260
1260
1120
1120
1120
1120
1120
1120
1260
1120
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
168
168
168
168
168
1000
168
168
168
595
595
168
168
168
168
168
168
1000
168
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
20
10
Failures
IXYS Semiconductor GmbH
9
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
20000
Remark
Device Hours
Remark
[hrs]
1008
Converter tested
10000
Inverter tested
10000
1680
1680
parametric failures
20000
1680
1680
10000
10000
1680
10000
1512
10000
10000
1680
10000
1680
10000
1680
Device Hours
[hrs]
10000
1680
1680
1680
1680
1680
10000
1680
1680
1680
5950
5950
1680
1680
1680
1680
1680
1680
20000
1680
Remark
TABLE 1D: Controller/Rectifier Bridge
Date Code
# Part Number
or
Test #
1 MMO75-16io1
1727
2 MMO90-16
1710
3 VBO19-16DT1
2011
4 VBO19-16DTI
1584
5 VBO40-16NO6
1860
6 VHF36-16io5
1542
7 VHF36-16io5
1732
8 VUB72-16
1657
9 VUB72-16No1
2004
10 VUB72-16No1
2004
11 VUB72-16No1
2004
12 VUO190-18NO7
2026
13 VUO25-16NO8
1581
14 VUO31
1863
15 VUO34-18NO1
1861
16 VUO36-16NO8
2086
17 VUO52-16NO1
2179
18 VUO60-16NO3
2326
19 VWO140-16io1
2269
20 VY40-16io1
1745
Voltage
[V]
1120
1120
1120
1120
1120
1120
1120
1120
960
960
1120
1260
1120
1260
1260
1120
1120
1120
1120
1120
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
168
168
168
168
168
168
168
168
168
168
1000
168
1000
168
168
168
168
168
168
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
Voltage
[V]
480
480
960
480
480
960
960
960
480
480
240
320
320
240
320
160
240
240
160
160
240
240
240
480
160
160
960
480
960
960
160
480
240
480
960
480
480
960
240
480
480
240
480
960
480
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
168
168
168
168
168
168
168
168
168
168
168
168
168
168
168
1000
1000
168
186
168
Sample
Size
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
10
20
20
20
10
10
20
20
20
20
20
20
20
10
6
9
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
1680
1680
1680
1680
1680
1680
1680
1680
1680
1680
1680
10000
1680
10000
1680
1680
1680
1680
1680
1680
Remark
Device Hours
[hrs]
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
3360
3360
3360
1680
1680
1680
3360
3360
3360
1680
1680
3360
3360
3360
3360
3360
20000
20000
1680
1116
1512
Remark
TABLE 1E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
DHF30IM600PN
DHF30IM600QB
DHG10I1200PM
DHG10I600PM
DHG20C600QB
DHG30I1200HA
DHG30I1200HA
DHG40C1200HB
DHG40C600PB
DHG60C600HB
DPG10I300PA
DPG10I400PA
DPG15I400PM
DPG20C200PN
DPG20C400PN
DPG30C200PC
DPG30C300HB
DPG30C300PB
DPG60C200HB
DPG60C200QB
DPG60C300HB
DPG60C300QB
DPG60IM300PC
DPH30IS600HI
DSEC29-02A
DSEC60-02Aq
DSEI12-12A
DSEI2x31-06C
DSEI2x61-12B
DSEI2x61-12B
DSEK60-02A
DSEP15-06A
DSEP29-03
DSEP2x61-06A
DSEP2x61-12A
DSEP30-06A
DSEP30-06BR
DSEP30-12AR
DSEP60-03A
DSEP60-06A
DSEP75-06AR
DSEP8-03AS
MEK95-06E
MEO450-12
MEO500-06DA
IXYS Semiconductor GmbH
Date Code
or
Test #
1508
1625
1682
1685
1711
1652
1734
1903
2037
1668
2177
2244
1770
1692
1768
2230
1644
1923
2229
1608
1525
1481
1643
2150
2137
1929
2192
1563
1607
2324
2314
2020
1954
2194
1984
2440
1952
1634
1537
1572
1619
1738
2157
1826
1934
10
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
TABLE 1F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
DSA120C150QB
DSA120C150QB
DSA30C100HB
DSA30C100HB
DSA30C100PN
DSA30C45HB
DSA50C100HB
DSA60C100PB
DSA70C100HB
DSA70C150HB
DSA90C200HB
DSA90C200HB
DSB10I45PM
DSB15IM45IB
DSB30C30PB
DSB30C45PB
DSB30C60PB
DSB40C15PB
DSS10-0045B
DSS20-0015B
DSS20-01AC
DSS2x41-01A
DSS6-015AS
DSS6-015AS
DSSK38-0025B
DSSK48-0025B
DSSK60-015A
DSSK60-015AR
DSSK80-006B
Date Code
or
Test #
1507
1907
1851
1981
1906
1714
2376
1781
1782
2261
1674
2117
1942
1622
1718
1783
1672
1673
2019
1871
1709
2039
1723
1838
1982
2193
1600
1857
2171
Voltage
[V]
150
150
100
100
100
45
100
100
100
150
200
200
36
36
24
36
60
12
36
12
100
100
150
150
20
25
150
150
48
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
100
100
100
100
125
100
100
100
125
125
150
150
100
100
125
125
100
Time
[hrs]
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
168
168
1000
1000
1000
1000
1000
168
168
1000
168
1000
1000
168
1000
168
168
1000
Sample
Size
20
20
20
20
20
20
60
16
20
20
20
20
20
20
20
20
20
20
20
20
20
10
77
77
20
20
20
20
20
Failures
TABLE 1G: Thyristor/Diode single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 CMA30E1600PN
1935
1120
2 CS20-12io1
2191
980
3 CS22-08io1M
2014
560
4 CS22-08io1M
2186
560
5 CS30-16io1
1855
1120
6 CS30-16io1DCSN
1920
1120
7 CS35-14
2008
980
8 CS45-16io1
1808
1120
9 CS60
2239
1120
10 CS60-16io1
1830
1120
11 CS8-12io2
1605
1280
12 DSA1-16D
2023
1120
13 DSA1-16D
2120
1120
14 DSA9-18F
2154
1260
15 DSAI75-16B
1858
1120
16 DSDI60-16A
1569
1280
17 DSP25-16
1564
1120
18 DSP25-16
2016
1120
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
150
150
150
150
125
150
150
Time
[hrs]
1000
168
168
168
168
1000
168
168
1000
1000
168
168
168
168
168
168
168
168
Sample
Size
20
20
20
20
20
20
10
20
20
20
10
20
20
10
10
20
20
20
Failures
Temp.
[°C]
125
125
125
125
125
Time
[hrs]
1000
168
168
168
168
Sample
Size
20
20
20
20
20
Failures
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
20000
20000
3360
20000
20000
20000
60000
16000
20000
20000
20000
3360
3360
20000
20000
20000
20000
20000
3360
3360
20000
1680
77000
77000
3360
20000
3360
3360
20000
Remark
I_R
Device Hours
Remark
[hrs]
parametric failures
20000
3360
3360
3360
3360
parametric failures
20000
1680
3360
20000
20000
1680
3360
3360
1680
1680
3360
3360
3360
TABLE 1J: Breakover Diode
#
Part Number
1
2
3
IXBOD 1
IXBOD1-08
IXBOD1-09
IXBOD1-10
IXBOD1-10
4
IXYS Semiconductor GmbH
Date Code
or
Test #
2252
1941
1800
1576
2096
Voltage
[V]
640
640
800
800
800
11
0
0
0
0
0
Device Hours
[hrs]
20000
3360
3360
3360
3360
Remark
HTGB (Tables 2A .. 2C)
TABLE 2A: MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1
IXBH42N170
TK0734
16
2
IXBH42N170
TP0828
16
3
IXCP01N90E
K0816
16
4
IXDN55N120D1
2122
16
5
IXDN75N120
1606
16
6
IXEH25N120D1
1757
16
7
IXEH25N120D1
2208
16
8
IXEH40N120D1
1482
16
9
IXER35N120D1
1950
16
10 IXFA7N80P
K533
16
11 IXFB100N50P
SP0737
16
12 IXFB170N30P
SP0824
16
13 IXFB44N100P
SP0721
16
14 IXFH12N100P
SK0733
16
15 IXFH12N120P
TJ1041E
16
16 IXFH14N100Q2
SK0834
16
17 IXFH150N17T
SK0841
16
18 IXFH15N100P
SK0636
16
19 IXFH20N100P
SP0716
16
20 IXFH26N50
TP0749
16
21 IXFH26N50
SS0846
16
22 IXFH26N60Q
SK0604
16
23 IXFK120N20
SK0834
16
24 IXFK21N100Q
SP0737
16
25 IXFK220N15P
SP0826
16
26 IXFK44N55Q
SP0737
16
27 IXFL100N50P
SP0549
16
28 IXFL60N80P
SP0605
16
29 IXFL82N60P
SP0550
16
30 IXFP12N50PM
K550
16
31 IXFP4B100Q
K816
16
32 IXFQ14N80P
SK0709
16
33 IXFR12N100Q
TP0703
16
34 IXFR14N100Q2
SP0732
16
35 IXFR26N100P
TJ1159E
16
36 IXFX48N50Q
SS0846
16
37 IXFX73N30Q
SK0613
16
38 IXFX90N30
SK0613
16
39 IXGA42N30C3
K732
16
40 IXGA42N30C3
K732
16
41 IXGA60N30C3
K732
16
42 IXGA60N30C3
K732
16
43 IXGH100N30C3
SK0644
16
44 IXGH100N30C3
SK0644
16
45 IXGH120N30C3
SK0638
16
46 IXGH120N30C3
SK0638
16
47 IXGH12N100
TP0836
16
48 IXGH1889
TP0736
16
49 IXGH20N170P
K0716E1
20
50 IXGH24N120C3H1
TK0650
16
51 IXGH28N60B3
SK0608
16
52 IXGH30N120B3
TP0606
16
53 IXGH32N170
TP0831
16
54 IXGH48N60B3
SK0607
16
55 IXGH48N60C3
SK0732
16
56 IXGH48N60C3D1
SP0733
16
57 IXGH50N60B
SK0634
16
58 IXGH60N60C3
SK0732
16
59 IXGH64N60B3
SK0608
16
60 IXGH72N60B3
SK0608
16
61 IXGH72N60C3
SK0751
16
62 IXGH85N30C3
SK0644
16
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
150
150
150
150
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
168
168
168
168
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
12
Sample
Size
30
30
30
20
10
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
3360
1680
3360
3360
3360
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
63 IXGH85N30C3
SK0644
16
64 IXGH8N100
TP0824
16
65 IXGK120N120A3
TP0716
16
66 IXGN200N60A2
SP0723
16
67 IXGN60N60C2D1
SP0745
16
68 IXGP120N33TBM-A
K723
16
69 IXGP24N120C3
K0652
16
70 IXGP50N33TBM-A
K0651
16
71 IXGP50N33TC
K0652
16
72 IXGP70N33TBM-A
K726
16
73 IXGP90N33TBM-A
K06251
16
74 IXGQ120N30TCD1
SK0631
16
75 IXGQ120N33TCD1
SK0639
16
76 IXGQ150N30TCD1
SK0631
16
77 IXGQ150N33TCD1
SK0639
16
78 IXGQ160N30PB
SK0601
16
79 IXGQ160N30PB
SK0601
16
80 IXGQ160N30PB
SK0601
16
81 IXGQ180N30TCD1
SK0632
16
82 IXGQ180N33TB
SK0711
16
83 IXGQ180N33TC
SK0649
16
84 IXGQ180N33TCD1
SK0639
16
85 IXGQ200N30PB
SK0631
16
86 IXGQ240N30PB
SK0631
16
87 IXGQ70N33TB
SK0650
16
88 IXGQ85N33PCD1
SK0613
16
89 IXGQ85N33PCD1
SK0638
16
90 IXGQ90N27PB
SK0611
16
91 IXGQ90N27PB
SK0640
16
92 IXGQ90N30TCD1
SK0631
16
93 IXGQ90N33TB
SK0651
16
94 IXGQ90N33TC
SK0649
16
95 IXGQ90N33TCD1
SK0639
16
96 IXGQ90N33TCD1
SK0728
16
97 IXGQ90N33TCD4
SK0721
16
98 IXGR120N60C2
SP0722
16
99 IXGR40N60C2D1
SP0807
16
100 IXGR40N60C2D1
SP0819
16
101 IXGR40N60C2D1
SP0838
16
102 IXGR40N60C2D1
SP0635
16
103 IXGR48N60C3D1
SP0722
16
104 IXGX72N60B3H1
SP0739
16
105 IXGX72N60B3H1
SP0809
16
106 IXKH70N60C5
1926
16
107 IXKP13N60C5M
1716
16
108 IXLF19N250A
2161
16
109 IXSH30N60B2D1
SP0506
16
110 IXSK40N60CD1
SK0722
16
111 IXTA06N120P
K832
16
112 IXTA180N10T
K746
16
113 IXTA1N80
K707
16
114 IXTA36N30P
SK0603
16
115 IXTA36N30P
K0621
16
116 IXTA36N30P
K640
16
117 IXTA50N25T
SK0604
16
118 IXTA50N28T
K545
16
119 IXTA50N28T
K0606
16
120 IXTA50N28T
K634
16
121 IXTA50N28T
K640
16
122 IXTA60N20T
SK0601
16
123 IXTA76N25T
K0704
16
124 IXTC110N25T
SP0721
16
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
13
Sample
Size
30
30
30
30
30
30
30
30
30
13
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
27
30
30
30
30
30
30
30
20
30
30
30
30
30
30
30
30
77
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
30000
30000
30000
30000
30000
13000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
27000
30000
30000
30000
30000
30000
30000
30000
20000
30000
30000
30000
30000
30000
30000
30000
30000
77000
3360
20000
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
125 IXTC200N075T
SP0627
16
126 IXTD200No55T2V5
2347
16
127 IXTH110N25T
SP0832
16
128 IXTH130N20T
SP0721
16
129 IXTH150N17T
SK0718
16
130 IXTH160N075T
K751
16
131 IXTH160N15T
SK0721
16
132 IXTH170N075T2
SP0829
16
133 IXTH1N250
TP0638
16
134 IXTH220N04T2
SP0743
16
135 IXTH30N50L
TK0738
16
136 IXTH76N25T
SP0613
16
137 IXTH86N25T
SP0638
16
138 IXTH8P50
SK0712
16
139 IXTK102N30P
SP0839
16
140 IXTK180N15P
SP0552
16
141 IXTK250N10
SP0721
16
142 IXTN17N120L
TP0813
16
143 IXTN79N20
2052
16
144 IXTP05N100
K816
16
145 IXTP06N120P
K833
16
146 IXTP08N100P
K625
16
147 IXTP08N120P
K0709
16
148 IXTP110N055T2
K0745
16
149 IXTP130N10T
K834
16
150 IXTP14N60PM
K631
16
151 IXTP14N60PM
K643
16
152 IXTP160N075T
K0707
16
153 IXTP170N075T2
K0811
16
154 IXTP17N30T
K648
16
155 IXTP18N60PM
K631
16
156 IXTP18P10T
K751
16
157 IXTP1R4N120P
K638
16
158 IXTP200N055T2
K0750
16
159 IXTP24P085T
K0750
16
160 IXTP2R4N120P
K636
16
161 IXTP2R4N120P
K816
16
162 IXTP32N20T
K647
16
163 IXTP36N15T
K648
16
164 IXTP36N25T
K636
16
165 IXTP36N30P
K841
16
166 IXTP36N30P
SS0842
16
167 IXTP36N30T
K641
16
168 IXTP3N120
K816
16
169 IXTP44N25T
K636
16
170 IXTP50N25T
K738
16
171 IXTP52P10P
K746
16
172 IXTP56N15T
K636
16
173 IXTP62N25T
K648
16
174 IXTP74N15T
K636
16
175 IXTP76N075T
K640
16
176 IXTP76N075T
K726
16
177 IXTP76N075T
SS0728
16
178 IXTP8N50P
AK732
16
179 IXTP8N50P
K646
16
180 IXTP90N15T
K647
16
181 IXTP98N075T
K746
16
182 IXTQ140N10P
SK0807
16
183 IXTQ170N10P
SK0802
16
184 IXTQ182N055T
SK0612
16
185 IXTQ182N055T
SK0612
16
186 IXTQ22N50P
SS0633
16
IXYS Semiconductor GmbH
Temp.
[°C]
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
500
1000
14
Sample
Size
30
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
15000
30000
Remark
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
187 IXTQ22N50P DS
NK0817
16
188 IXTQ22N60P
SK0604
16
189 IXTQ26N50P
SK0604
16
190 IXTQ26P20P
SK0746
16
191 IXTQ28N15P
SK0653
16
192 IXTQ30N50L2
TK0813
16
193 IXTQ36P15P
SK0652
16
194 IXTQ44N50P
K751
16
195 IXTQ75N10P
SK0838
16
196 IXTQ76N25T
SK0613
16
197 IXTQ82N25T
SK0514
16
198 IXTQ82N25T
SK0603
16
199 IXTQ88N28T
SK0641
16
200 IXTQ88N30P
SK00742
16
201 IXTQ88N30P
SK0605
16
202 IXTQ88N30T
SK0638
16
203 IXTQ96N20P
SS0631
16
204 IXTQ96N25T
SK0648
16
205 IXTT88N30P
SP0626
16
206 IXTV18N60PS
SP0636
16
207 IXTV230N085TS
SP0629
16
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 GWM100-01X1SL
1965
2 GWM120-0075P3SL
1720
3 MDI300-12A4
1555
4 MDI75-12
1931
5 MIAA20WD600TMH
1844
6 MII300-12A4
2012
7 MII300-12E4
2432
8 MII400-12E4
1741
9 MII75-12A3
1541
10 MIXA15WB1200TED
1992
11 MIXA35WB1200TED
1991
12 MUBW15-12A6K
1553
13 MUBW15-12A7
2136
14 MWI30-06A7T
1635
15 MWI30-06A7T
2069
16 VII130-06P1
2025
17 VKI50-12P1
2084
18 VKI50-12P1
2084
19 VMO1600-02P
2123
20 VWI20-06P1
2462
Temp.
[°C]
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
1000
126
168
1000
168
168
168
168
1000
1000
168
168
168
168
168
168
168
1000
168
Sample
Size
10
80
10
10
10
10
10
10
10
5
5
10
10
10
10
10
10
10
10
10
Failures
IXYS Semiconductor GmbH
Voltage
[V]
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
15
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
Device Hours
[hrs]
1680
80000
1260
1680
10000
1680
1680
1680
1680
5000
5000
1680
1680
1680
1680
1680
1680
1680
10000
1680
Remark
POWER CYCLE (Tables 3A ..3H)
TABLE 3A: MOSFET/IGBT single device
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 IXBH9N160G
1759
125
2 IXDH30N120D1
1940
125
3 IXFH26N50
SS0846
4 IXFN82N60P
SP0551
5 IXFX48N50Q
SS0846
6 IXFX73N30Q
SK0613
7 IXFX90N30
SK0613
8 IXGQ85N33PCD1
SK0614
9 IXGQ90N27PB
SK0611
10 IXGR48N60C3D1
SP0804
11 IXGX72N60B3H1
SP0809
12 IXKH20N60C5
1987
125
13 IXKP13N60C5M
1716
14 IXSH30N60B2D1
SP0506
15 IXTP14N60PM
K643
16 IXTP18N60PM
K631
17 IXTQ26N50P
SK0604
18 IXTQ76N25T
SK0613
19 IXTQ88N30P
SK0742
20 IXTQ96N20P
SS0631
-
∆Τ
[K]
80
80
100
100
100
100
100
100
100
100
100
80
80
100
50
50
100
100
100
100
Number
of
Cycles
2000
2000
10000
10000
10000
10000
10000
10000
10000
10000
10000
2000
10000
10000
10000
10000
10000
10000
10000
10000
Sample
Size
20
20
24
24
24
24
24
24
24
24
24
20
20
24
24
24
24
24
24
24
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
40000
40000
240000
240000
240000
240000
240000
240000
240000
240000
240000
40000
200000
240000
240000
240000
240000
240000
240000
240000
TABLE 3B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 GWM160-0055X1
1960
2 MIAA20WD600TMH
1844
3 MKI75-06A7T
1776
4 MWI35-12T7T
2147
Tj(max)
[°C]
150
125
125
125
∆Τ
[K]
100
80
80
80
Number
of
Cycles
3000
10000
10000
20000
Sample
Size
80
9
10
10
Failures
Device Cycles
0
0
0
0
240000
90000
100000
200000
TABLE 3C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC162-12io1
2056
2 MCC26-16io1
2227
3 MCC310-16io1
1588
4 MCC44-16io1
2221
5 MCC56-14io1
2093
6 MCC95-12io1
2148
7 MCD40-16io6
1474
8 MDD95-18N1
1971
Tj(max)
[°C]
125
125
125
125
125
125
125
125
∆Τ
[K]
80
80
80
80
80
80
80
80
Number
of
Cycles
10000
20000
10000
10000
10000
20000
5000
20000
Sample
Size
10
10
10
10
10
10
10
10
Failures
Device Cycles
0
0
4
0
0
0
0
0
100000
200000
100000
100000
100000
200000
50000
200000
TABLE 3D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 VBO19-16DT1
2011
125
2 VBO40-16NO6
1860
125
3 VUO121-16NO1
2071
125
4 VUO190-18NO7
2026
125
5 VUO52-16NO1
2100
125
6 VUO70-16N07
2166
125
VVY50-16io1
2246
125
7 VVZ40-14io1
1630
125
∆Τ
[K]
80
80
80
80
80
80
80
80
Number
of
Cycles
5000
5000
20000
2000
5000
2000
5000
5000
Sample
Size
10
10
10
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
2
50000
50000
200000
20000
50000
20000
50000
50000
IXYS Semiconductor GmbH
16
Remark
Remark
Remark
Remark
V_T and short
TABLE 3E: FRED
Date Code
or
Test #
1699
2244
1755
1928
2325
2040
2317
1599
1955
1930
2354
2140
1633
1951
2185
2021
2142
2058
Tj(max)
[°C]
125
145
125
145
125
125
145
150
145
125
125
125
125
145
145
145
125
125
∆Τ
[K]
80
100
80
100
80
80
100
105
100
80
80
80
80
100
100
100
80
80
Number
of
Cycles
2000
4000
2000
2000
2000
5000
2000
2000
2000
2000
2000
2000
5000
2000
2000
2000
5000
5000
Sample
Size
20
20
20
20
10
20
10
20
20
20
20
20
10
20
20
20
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
1
40000
80000
40000
40000
20000
100000
20000
40000
40000
40000
40000
40000
50000
40000
40000
40000
50000
50000
Date Code
or
Test #
2184
2018
2173
1723
1838
1873
1753
2311
1575
Tj(max)
[°C]
145
145
145
140
140
150
150
125
125
∆Τ
[K]
100
100
100
100
100
105
105
80
80
Number
of
Cycles
2000
2000
4000
8572
8572
2000
2000
2000
2000
Sample
Size
20
20
10
77
77
20
20
20
20
Failures
Device Cycles
1
0
0
0
0
0
0
0
0
80000
40000
40000
660044
660044
40000
40000
40000
40000
TABLE 3G: Thyristor/Diode single device
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 CS30-16io1
2009
125
2 CS35-14
2008
125
3 CS35-14io4
1473
125
4 CS45-12io1
1601
125
5 CS8-12io2
1605
125
6 DSA1-16D
2120
150
7 DSA1-18D
1435
150
8 DSA15IM45IB
1621
125
9 DSA75-16B
1859
150
10 DSA9-18F
2154
125
11 DSI45-08A
1760
150
12 DSI45-08A
2182
150
13 DSI75-16
2327
145
∆Τ
[K]
80
80
80
80
80
105
105
80
105
80
105
105
100
Number
of
Cycles
2000
2000
2000
5000
2000
2000
2000
4000
2000
2000
2000
2000
2000
Sample
Size
20
10
10
20
10
20
20
20
10
10
20
20
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
40000
20000
20000
100000
20000
40000
40000
80000
20000
20000
40000
40000
20000
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
DH60-18A
DPG10I400PA
DSEC30-02A
DSEI120-12A
DSEI2x121-02A
DSEI2X61-10B
DSEI30-10A
DSEI60-12A
DSEP12-12A
DSEP15-12CR
DSEP15-12CR
DSEP29-06B
DSEP2x61-06A
DSEP30-12CR
DSEP60-03A
DSEP60-12A
MEO450-12DA"H"
MEO500-06DA
Remark
V_F over limt
TABLE 3F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
DSA90C200HB
DSS16-0045A
DSS2x160-01A
DSS6-015AS
DSS6-015AS
DSSk60-0045A
DSSK60-015AR
DSSK70-0015B
DSSK80-006B
IXYS Semiconductor GmbH
17
Remark
Remark
TEMPERATURE CYCLE (Tables 4A ..4J)
TABLE 4A: MOSFET/IGBT single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 FII50-12EL
1534
-55
2 FMD47-06KC5
2287
-55
3 IXA55I200HJ
2395
-40
4 IXBH9N160G
2446
-55
5 IXBH9N160G
1574
-55
6 IXDN55N120D1
2122
-40
7 IXDN75N120
1606
-40
8 IXDR30N120D1
2442
-55
9 IXEH25N120D1
2208
-55
10 IXGR48N60C3D1
2129
-55
11 IXKC13N80C
1769
-55
12 IXKC25N80C
1590
-55
13 IXKH20N60C5
2013
-40
14 IXKH70N60C5
1926
-40
15 IXKP10N60C5M
1693
-40
16 IXKP13N60C5M
1716
-55
17 IXKT70N60C5
2068
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
100
100
100
50
50
50
20
50
50
100
100
100
50
50
100
100
1000
Sample
Size
20
20
20
20
20
20
10
20
20
40
20
20
20
20
20
20
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
2000
2000
2000
1000
1000
1000
200
1000
1000
4000
2000
2000
1000
1000
2000
2000
20000
TABLE 4B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MDI300-12A4
1555
2 MIAA20WD600TMH
1844
3 MII300-12E4
2432
4 MII400-12E4
1741
5 MII75-12A3
1541
6 MIXA15WB1200TED
1992
7 MKI75-06A7T
1562
8 MKI75-06A7T
1724
9 MKI80-06T6K
1818
10 MUBW15-12A6K
1553
11 MUBW25-12T7
1896
12 MUBW30-12
2303
13 MUBW50-12E8
2115
14 MUBW75-12T8
1731
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
100
50
50
50
100
50
50
100
50
100
100
50
100
Sample
Size
10
9
10
10
10
10
10
10
10
10
10
20
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
500
900
500
500
500
1000
500
500
1000
500
1000
2000
500
1000
IXYS Semiconductor GmbH
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
18
Remark
I_CES 50 Cycles
Remark
TABLE 4C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC162-14
1816
2 MCC162-14io1
1544
3 MCC162-14io1
1629
4 MCC162-16
2451
5 MCC200-14
1717
6 MCC26-14
2035
7 MCC26-14io1
1641
8 MCC310-12io1
1545
9 MCC310-14io1
1627
10 MCC310-16io1
2215
11 MCC312-14
2310
12 MCC250-14io1
2146
13 MCC44-12io1
1540
14 MCC44-16io1
2048
15 MCC44-16io8
1864
16 MCC56-16io1
2320
17 MCC72-14io1
2007
18 MCC95-14io1
1788
19 MCC95-16io1
2302
20 MCC95-16io1
2450
21 MCD162-16io1
1884
22 MCD200-14
2010
23 MCD250/16
2059
24 MCD56-16io1
1646
25 MCD95-12io1
2199
26 MCO600-16io1
1680
27 MDD172-16n1
2344
28 MDD26-18N1
1749
29 MDD56-16io1
1865
30 MDD56-18N1
2080
31 MDD95-16
1585
32 MDD95-18N1
1971
33 MDI300-12A4
1555
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
50
50
50
50
50
50
50
50
50
100
100
50
100
100
300
50
150
100
50
50
50
50
50
50
50
100
100
50
50
50
100
50
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
20
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
1
3
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
500
500
500
500
500
500
500
500
500
500
1000
1000
500
1000
1000
3000
500
1500
1000
500
500
500
500
500
500
500
1000
2000
500
500
500
1000
500
TABLE 4D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Test #
1 MMO230-16iO7
1868
2 MMO75-16
2180
3 VBO19-16DT1
1648
4 VBO25-12nO2
1726
5 VBO25-12NO2
2005
6 VBO40-16NO6
1860
7 VBO40-16NO6
1860
8 VUB120-16
2034
9 VUB120-16NO2
1636
10 VUB145-16NO1
2264
11 VUB72-16No1
1894
12 VUO36-12NO8
2024
13 VUO36-16nO8
1580
14 VUO52-18
2251
15 VUO80-16
1778
16 VUO82-16NO7
2085
17 VUO84-16
2388
18 VVY40-16io1
1679
19 VVZ40-14
1691
20 VWO85-12
1570
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
125
Number
of
Cycles
50
50
50
50
50
20
50
50
50
50
50
50
10
50
100
10
100
50
100
50
Sample
Size
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1000
500
500
500
500
200
500
500
500
500
500
500
100
500
1000
100
1000
500
1000
500
IXYS Semiconductor GmbH
19
Remark
V_F
Remark
TABLE 4E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
DH2x61-18A
DH60-18A
DH60-18A
DHG10I600PM
DHH55-36N1F
DPG10I300PA
DPG15I400PM
DPG60C200HB
DPG60C300QB
DPG60I400HA
DPH30IS600HI
DSEC30-03A
DSEC60-04A
DSEE29-06CC
DSEI120-12A
DSEI120-12A
DSEI2x121-02A
DSEI2x121-02A
DSEI2x31-06C
DSEI2x61-06C
DSEI60-06A
DSEP15-06A
DSEP15-06B
DSEP15-12CR
DSEP2x61-06A
DSEP30-06BR
DSEP30-06BR
DSEP30-06CR
DSEP8-03AS
DSEP8-12A
MEE250-12DA
MEE250-12I
MEE300-06DA
MEK300-06
MEK300-06
MEK350-02
MEK95-06E
MEO450-12DA
Date Code
or
Test #
2394
2307
1568
1685
1604
2177
1770
2229
1909
2164
2150
2188
2441
1771
1756
1538
2042
2325
1563
2279
1804
2020
2138
1514
2194
2304
1700
2015
1738
1956
2238
1887
2064
1737
2431
2382
2157
2000
Low
Temp.
[°C]
-40
-40
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-40
-40
-40
-40
-40
-40
-40
-55
-55
-55
-40
-55
-55
-55
-40
-55
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
50
50
100
100
100
100
100
100
100
100
50
50
100
50
50
20
20
20
50
50
50
50
50
20
50
50
50
100
50
100
50
100
50
50
100
50
100
Sample
Size
20
20
20
20
40
20
20
20
20
20
20
20
20
20
20
20
10
10
10
20
20
20
20
20
10
20
20
20
20
20
10
10
10
10
10
12
10
10
Failures
Device Cycles
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1000
1000
1000
2000
4000
2000
2000
2000
2000
2000
2000
1000
1000
2000
1000
1000
200
200
200
1000
1000
1000
1000
1000
200
1000
1000
1000
2000
1000
1000
500
1000
500
500
1200
500
1000
Date Code
or
Test #
1907
1906
2376
2448
2118
2258
1674
2312
1622
2018
1709
2173
2172
1985
1596
1596
1492
1723
1807
1982
1557
1573
2189
1575
Low
Temp.
[°C]
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-40
-40
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
100
100
100
100
50
100
100
50
100
50
100
100
100
50
1000
1000
500
1000
50
50
50
50
50
50
Sample
Size
20
20
60
20
20
20
20
20
20
20
20
10
10
10
80
80
77
77
20
20
20
20
20
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2000
2000
6000
2000
1000
2000
2000
1000
2000
1000
2000
1000
1000
500
80000
80000
38500
77000
1000
1000
1000
1000
1000
1000
Remark
TABLE 4F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
DSA120C150QB
DSA30C100PN
DSA50C100HB
DSA50C100HB
DSA60C45PB
DSA60C60PB
DSA90C200HB
DSA90C200HB
DSB15IM45IB
DSS16-0045A
DSS20-01AC
DSS2x160-01A
DSS2x61-01A
DSS2x61-01A
DSS31-0045A
DSS31-0045A
DSS31-0045A SN
DSS6-015AS
DSSK30-01A
DSSK38-0025B
DSSK40-0015B
DSSK60-015AR
DSSK60-02A
DSSK80-006B
IXYS Semiconductor GmbH
20
Remark
TABLE 4G: Thyristor/Diode single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 CS20-12io1
1758
-40
2 CS22-08io1M
1953
-40
3 CS22-08io1M
2187
-40
4 CS23-12io2
1959
-40
5 CS30-12io1
1977
-40
6 CS30-16io1DCSN
1820
-40
7 CS35-14io4
1473
-40
8 CS35-14io4
2203
-40
9 CS45-16io1
1598
-40
10 CS45-16io1
2017
-40
11 CS60-16io1
1830
-40
12 CS60-16io1
2257
-40
13 CS8-12io2
1605
-40
14 DSA1-16D
2023
-40
15 DSA1-16D
2120
-40
16 DSA17-16A
1703
-40
17 DSA35-16A
1566
-40
18 DSA9-18F
2154
-40
19 DSAI35-16A
2067
-40
20 DSAI75-16B
1858
-40
21 DSI30-08A
2190
-40
22 DSI45-12A
1805
-40
23 DSI75-16
2327
-40
24 DSP25-12A
2315
-40
25 DSP25-16
1564
-40
26 DSP8-12A
2141
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
50
50
20
50
100
20
20
50
50
100
50
20
50
50
20
20
20
20
20
50
50
20
50
50
50
Sample
Size
20
20
20
20
20
20
10
10
20
20
20
20
10
20
20
20
10
10
10
10
20
20
10
20
20
20
Failures
Device Cycles
1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1000
1000
1000
400
1000
2000
200
200
1000
1000
2000
1000
200
1000
1000
400
200
200
200
200
1000
1000
200
1000
1000
1000
TABLE 4J: Breakover Diode
Date Code
# Part Number
or
Test #
1 IXBOD1-08
1941
2 IXBOD1-09
1800
3 IXBOD1-10
1576
4 IXBOD1-10
2096
5 IXBOD1-10
2436
High
Temp.
[°C]
150
150
150
150
150
Number
of
Cycles
50
50
50
50
50
Sample
Size
20
20
20
20
20
Failures
Device Cycles
0
0
0
0
0
1000
1000
1000
1000
1000
IXYS Semiconductor GmbH
Low
Temp.
[°C]
-40
-40
-40
-40
-40
21
Remark
Remark
HUMIDITY TEST (Tables 5A, 5H..5J)
TABLE 5A: MOSFET/IGBT single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 FMD47-06KC5
2287
121
2 IXA55I200HJ
2395
121
3 IXGR48N60C3D1
2129
121
4 IXKH24N60C5
2066
121
5 IXKP13N60C5M
1716
85
6 IXKP13N60C5M
1687
121
7 IXKR47N60C5
2286
121
8 IXLV1907
2241
85
9 IXTD200No55T2V5
2347
85
10 IXTN79N20
2202
121
Rel. H.
[%]
100
100
100
100
85
100
100
85
85
100
Time
[hrs]
96
96
96
48
1000
96
96
168
1000
48
Sample
Size
20
20
40
20
20
10
20
20
10
20
Failures
TABLE 5B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MIAA20WD600TMH
1844
2 MII300-12A4
2012
3 MWI35-12T7T
2147
4 VMM85-02F
2204
Temp.
[°C]
85
85
85
85
Rel. H.
[%]
85
85
85
85
Time
[hrs]
1000
168
1000
168
Sample
Size
10
20
10
10
Failures
TABLE 5C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC44-12io1
1748
2 MCC501-16io1
2415
3 MDD172-16n1
2344
4 MDD172-16n1
2344
5 MDD56-16io1
2158
6 MDD95-16
2032
Temp.
[°C]
85
85
85
85
85
85
Rel. H.
[%]
85
85
85
85
85
85
Time
[hrs]
168
1000
168
168
168
168
Sample
Size
10
3
10
10
20
10
Failures
TABLE 5D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Test #
1 MMO90-16io6
2041
2 VHF36-16
1654
3 VUO36-16NO8
2086
4 VUO52-18
2253
5 VUO84-16
2388
Temp.
[°C]
121
85
85
85
85
Rel. H.
[%]
100
85
85
85
85
Time
[hrs]
48
168
168
168
1000
Sample
Size
10
10
10
10
10
Failures
Temp.
[°C]
121
121
121
121
121
121
121
121
121
121
121
121
121
121
121
85
85
Rel. H.
[%]
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
85
85
Time
[hrs]
96
96
96
96
96
96
48
48
96
168
48
48
48
48
96
168
168
Sample
Size
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
2
0
Device Hours
[hrs]
1920
1920
3840
960
20000
960
1920
3360
10000
960
Remark
Device Hours
[hrs]
10000
3360
10000
1680
Remark
Device Hours
[hrs]
1680
3000
1680
1680
3360
1680
Remark
Device Hours
[hrs]
480
1680
1680
1680
10000
Remark
Device Hours
[hrs]
1920
1920
1920
1920
1920
1920
960
960
1920
3360
960
960
960
960
1920
1680
1680
Remark
I_R over
TABLE 5E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
DPG10IM300UC
DPG20C300PN
DPG30C200PC
DPG30I300PA
DPG80C400HB
DPH30IS600HI
DSEI2x121-02A
DSEI2x121-02A
DSEI2x61-12B
DSEI60-10A
DSEI8-06AS
DSEP30-06BR
DSEP30-12A
DSEP30-12CR
DSEP8-03AS
MEK300-06DA
MEO450-12DA
IXYS Semiconductor GmbH
Date Code
or
Test #
2243
1908
2230
2149
2396
2150
2325
2325
1607
2439
1535
1536
2139
1927
1837
2212
1742
22
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
TABLE 5F: Schottky Diode
#
Part Number
1
2
3
4
5
6
DSA120C150QB
DSA20C60PN
DSA90C200HB
DSB15IM45IB
DSS31-0045A SN
DSS6-015AS
Date Code
or
Test #
1907
1974
2183
1622
1492
1723
Temp.
[°C]
121
121
121
121
121
121
Rel. H.
[%]
100
100
100
100
100
100
Time
[hrs]
96
96
48
96
96
96
Sample
Size
20
20
20
20
77
77
Failures
TABLE 5G: Thyristor/Diode single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 CS45-12io1
1754
121
2 DSA1-16D
2120
121
3 DSDI60-14A
1806
121
4 DSI45-16A
1976
121
Rel. H.
[%]
100
100
100
100
Time
[hrs]
48
48
48
96
Sample
Size
20
20
20
20
Failures
TABLE 5J: Breakover diode
Date Code
# Part Number
or
Test #
1 IXBOD1-08
1941
2 IXBOD1-09
1800
3 IXBOD1-10
1576
4 IXBOD1-10
2096
5 IXBOD1-10
2436
Rel. H.
[%]
100
100
100
100
100
Time
[hrs]
48
48
48
48
48
Sample
Size
20
20
20
20
20
Failures
IXYS Semiconductor GmbH
Temp.
[°C]
121
121
121
121
121
23
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
1920
1920
960
1920
7392
7392
Remark
Device Hours
[hrs]
960
960
960
1920
Remark
Device Hours
[hrs]
960
960
960
960
960
Remark