Efficiency through technology
RELIABILITY REPORT
2007
Power Semiconductor Devices
January 2005 - December 2006
IXYS Corporation
3540 Bassett Street
Santa Clara CA 95054
USA
Published 2007
IXYS Semiconductor GmbH
Edisonstrasse 15
D-68623 Lampertheim
Germany
Humidity Test
QUALITY AND RELIABILITY
Failure Modes: Degradation of electrical leakage
characteristics due to moisture penetration into plastic
packages.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, IGSS, IGES,
VTH.
IXYS is committed to setting a new standard for
excellence in Power Semiconductors. Reflecting our
dedication to industry leadership in the manufacture of
medium to high power devices, reliability has
assumed a primary position in raw material selection,
design, and process technology.
Reliability utilizes information derived from applied
research, engineering design, analysis of field
applications and accelerated stress testing and
integrates this knowledge to optimize device design
and manufacturing processes.
All areas that impact reliability have received
considerable attention in order to achieve our goal to
be the # 1 Reliability Supplier of Power
Semiconductor products. We believe IXYS products
should be the most reliable components in your
system.
We have committed significant resources to
continuously improve and optimize our device design,
wafer fab processes, assembly processes and test
capabilities. As a result of this investment, IXYS has
realized a dramatic improvement in reliability
performance on all standardized tests throughout the
product line.
Excellence in product reliability is “built-in”, not testedin. Moreover, it requires a total systems approach,
involving all parties: from design to raw materials to
manufacturing.
In addition to qualifying new products released to the
market, life and environmental tests are periodically
performed on standard products to maintain feedback
on assembly and fabrication performance to assure
product reliability. Further information on reliability of
power devices is provided on www.ixys.com.
Power Cycle
Failure Modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling can
cause
thermal
and
electrical
performance
degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF, IDSS,
ICES, IDRM, IRRM, BVDSS, BVCES, VDRRM,
VRRM.
TERMS IN TABLES
SUMMARY TABLES 1 AND 2:
AF: acceleration factor
AF = exp { Ea *[ (T2 -T1) / ( T2 * T1 ) ] / k }
(1)
Ea: activation energy; @ HTRB Ea = 1.0 eV
@ HTGB Ea = 0.4 eV
-5
k: Boltzmann’s constant 8.6·10 eV/K
T1: abs. application junction temperature (273+Tj) K
T2: abs. test junction temperature (273+Tj) K
UCL: upper confidence limit (60%)
Total Failures @ 60% UCL:
RELIABILITY TESTS
High Temperature Reverse Bias (HTRB)
N = r + dr
Failure Modes: Gradual degradation of break-down
characteristics due to presence of foreign materials
and polar/ionic contaminants disturbing the electric
field termination structure.
Sensitive Parameters: BVDSS, BVCES, VDRRM, VRRM,
IDSS, ICES, IDRM, IRRM, VTH.
(2)
r: number of failed devices
dr: additional term, depending on both r and UCL
MTTF: Mean Time To Failures = 1/Failure Rate
9
FIT: 1 FIT = 1 failure / 10 hrs
High Temperature Gate Bias (HTGB)
TABLES 3:
Failure Modes: Rupture of the gate oxide due to
localized thickness variations, structural anomalies,
particulates in the oxide, channel inversion due to
presence of mobile ions in the gate oxide.
Sensitive Parameters: IGSS, IGES,VTH, IDSS, ICES.
∆T: max Tj - min Tj during Test
DEFINITION OF FAILURE
Failure criteria are defined according to IEC 60747
standard series
Temperature Cycle
Failure modes: Thermal fatigue of silicon-metal and
metal-metal interfaces due to heating and cooling,
causing thermal and electrical performance degradation.
Sensitive Parameters: RthJC, RDS(on), VCE(sat), VT, VF.
2
Summary of Tables 1A - 1H: HTRB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 1A
Table 1B
Table 1C
Table 1D
Table 1E
Table 1F
Table 1G
Table 1H
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
ISOPLUS
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
485
29
141
4007
1
2,00
2003
120
15
206
0
0,92
10582
634
25
279
1
2,00
10653
638
17
170
0
0,92
1466
88
42
760
0
0,92
2848
171
23
493
1
2,00
3075
184
11
200
0
0,92
22
454
1
-
4126020
236
3933
459266
57
952
188992
11
180
86360
11
179
627760
78
1301
702170
40
669
299187
37
620
834903
-
Summary of Table 2A - 2C: HTGB
Failure Rate [FIT] 125°C, 60% UCL
Failure Rate [FIT] 90°C, 60% UCL
Total Lots Tested
Total Devices Tested
Total
Actual
Failures
60% UCL {eq. (2)}
Total Equivalent Device Hours
@ 125°C {AF eq. (1)}
MTTF
125°C 60% UCL
(Years)
90°C 60% UCL
Table 2A
Table 2B
Table 2C
MOSFET/IGBT
MOSFET/IGBT
ISOPLUS
discrete device *)
Module
277
90
114
3332
0
0,92
4747
1531
15
217
0
0,92
8
232
0
-
3315560
411
1275
193820
24
75
519760
-
*) including ISOPLUS
IXYS Semiconductor GmbH
3
Summary of Tables 3A - 3H: Power Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 3A
Table 3B
Table 3C
Table3D
Table 3E
Table 3F
Table 3G
Table 3H
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
15
352
0
3360000
4
40
0
350000
5
50
0
650000
3
30
0
120000
10
180
0
420000
8
217
0
1540044
6
100
0
260000
1
20
0
200000
Summary of Tables 4A - 4J: Temperature Cycle
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Cycles
Table 4A
Table 4B
Table 4C
Table4D
Table 4E
Table 4F
Table 4G
Table 4H
Table 4J
MOSFET/IGBT
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
Module
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
30
786
0
169300
15
150
0
9500
39
451
2
35600
15
150
0
11100
32
580
0
43400
21
554
0
151500
23
398
0
21100
27
642
0
134700
Diode
Summary of Tables 5A - 5J: Humidity Test
Total Lots Tested
Total Devices Tested
Total Failures
Total Device Hours
Table 5A
Table 5C
Table5D
Table 5E
Table 5F
Table 5G
Table 5H
Table 5J
MOSFET/IGBT
Thyr./Diode
Controller/
FRED
Schottky
Thyr./Diode
Isoplus
Breakover
discrete device *)
Module
Rec. Bridge*)
*)
Diode*)
discrete device*)
4
80
0
24800
4
40
0
23360
4
40
0
6720
10
178
0
13008
5
214
1
20544
2
40
0
1920
*) including ISOPLUS
IXYS Semiconductor GmbH
4
Diode
4
80
0
3840
4
80
0
3840
4
80
0
4000
HTRB (Tables 1A .. 1J)
TABLE 1A: MOSFET/IGBT single device
Date Code
# Part Number
or
Test #
1 IXBH16N170
TP0619
2 IXBH40N160
1513
3 IXBP5-N160G
1337
4 IXDH20N120
1436
5 IXDN55N120D1
1393
6 IXEH28N60C2D2
1578
7 IXEL40N400
1611
8 IXEL40N400
1611
9 IXER35N120D1
1400
10 IXFH12N80P
SK0524
11 IXFH13N50
CK0539
12 IXFH15N80
MP0510
13 IXFH20N60
SK0446
14 IXFH20N60
MK0537
15 IXFH20N60
SK0544
16 IXFH22N50P
N/A
17 IXFH23N80Q
MP0510
18 IXFH26N50Q
MK0532
19 IXFH26N60Q
SK0451
20 IXFH26N60Q
SK0604
21 IXFH26N90
AP0538
22 IXFH32N50
SK0531
23 IXFH40N30Q
SP0543
24 IXFH44N50P
SP0518
25 IXFH50N20
SK0538
26 IXFH69N30P
SK0527
27 IXFH80N10Q
SK0510
28 IXFK26N90
AP0517
29 IXFK30N100Q2
SP0446
30 IXFK34N80
AP0526
31 IXFK64N50P
SP0518
32 IXFP12N50PM
K550
33 IXFR36N60P
SP0517
34 IXFX48N50Q
SK0543
35 IXFX48N50Q
ZP0545
36 IXFX48N60P
SP0518
37 IXFX52N60Q2
SP0541
38 IXFX73N30Q
SK0613
39 IXFX90N30
SK0613
40 IXGH240N30PC
SP0537
41 IXGH30N120B3
TP0606
42 IXGH48N60B3
SK0607
43 IXGH64N60B3
SK0608
44 IXGH72N60B3
SK0608
45 IXGH8N100
N/N
46 IXGP86N30PB
SK0535
47 IXGQ120N30TCD1
SK0631
48 IXGQ150N30TCD1
SK0631
49 IXGQ160N30PB
SK0601
50 IXGQ160N30PB
SK0601
51 IXGQ160N30PB
SK0601
52 IXGQ160N30PB
SK0601
53 IXGQ200N30PB
SK0631
54 IXGQ240N30PB
SK0631
IXYS Semiconductor GmbH
Voltage
[V]
960
1280
1280
960
960
600
2200
3000
960
640
400
640
480
480
480
400
640
400
480
480
720
400
240
400
160
240
80
720
800
640
400
400
480
400
400
480
480
240
240
240
960
480
480
480
800
240
240
240
240
240
240
240
240
240
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
168
168
168
168
1000
262
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
5
Sample
Size
30
20
20
20
10
20
10
10
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
60
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
Remark
[hrs]
30000
3360
3360
3360
1680
20000
2620
1680
3360
30000
30000
168h OK
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
60000
30000
30000
30000
30000
30000
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
55 IXGQ240N30PB
SK0631
240
56 IXGQ240N30PB
SK0631
240
57 IXGQ240N30PB
SK0631
240
58 IXGQ85N33PCD1
SK0613
264
59 IXGQ85N33PCD1
SK0638
264
60 IXGQ86N30PB
K0543
240
61 IXGQ86N30PBD1
SK0534
240
62 IXGQ86N30PCD1
SK0534
240
63 IXGQ90N27PB
SK0621
216
64 IXGQ90N27PB
SK0640
216
65 IXGQ90N30TCD1
SK0631
240
66 IXKC13N80C
1769
640
67 IXKC25N80C
1590
640
68 IXKC40N60C
1281
480
69 IXKH20N60C5
1631
480
70 IXKP10N60C5M
1693
480
71 IXKP13N60C5M
1716
480
72 IXKP20N60C5
1653
480
73 IXKP24N60C5
1671
480
74 IXKR25N80C
1521
640
75 IXTA36N30P
SK0509
240
76 IXTA36N30P
K0526
240
77 IXTA36N30P
K0537
240
78 IXTA36N30P
SK0603
240
79 IXTA36N30P
K0621
240
80 IXTA36N30P
K640
240
81 IXTA50N25T
K545
200
82 IXTA50N28T
K634
224
83 IXTA50N28T
K640
224
84 IXTA60N20T
K545
160
85 IXTA60N20T
SK0601
160
86 IXTA75N10P
K0531
80
87 IXTH04N100P
TPN/A
800
88 IXTH04N100P
TPN/A
800
89 IXTH1N80P
TP0604
640
90 IXTH75N15
SK0450
120
91 IXTH75N15
SK0515
120
92 IXTK34N80
SP0546
640
93 IXTK34N80
SP0603
640
94 IXTK34N80
SP0603
640
95 IXTK62N25
SS0444
200
96 IXTK62N25
SS0516
200
97 IXTK62N25
SS0517
200
98 IXTK62N25
SS0517
200
99 IXTK62N25
SS0524
200
100 IXTN79N20
1140
160
101 IXTP14N60PM
K631
480
102 IXTP14N60PM
K643
480
103 IXTP18N60PM
K631
480
104 IXTP8N50P
K646
400
105 IXTQ22N50P
SS0633
400
106 IXTQ22N60P
SK0539
480
107 IXTQ22N60P
SK0604
480
108 IXTQ22N60P
SK0609
480
109 IXTQ22N60P
SK0608
480
110 IXTQ22N60P
SK0608
480
111 IXTQ22N60P
SK0609
480
112 IXTQ22N60P
SK0609
480
113 IXTQ26N50P
SK0604
400
114 IXTQ30N60P
SK0517
480
IXYS Semiconductor GmbH
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
150
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
800
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
6
Sample
Size
30
30
30
27
30
30
30
30
30
30
30
20
20
20
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
10
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
Remark
[hrs]
30000
30000
30000
27000
30000
30000
30000
30000
30000
30000
30000
20000
20000
20000
20000
20000
20000
20000
16000
1000h, 200h at 125°C
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
1680
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
TABLE 1A (cont'd): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
115 IXTQ44N30T
SK0629
240
116 IXTQ64N25P
SK0535
200
117 IXTQ69N30P
SK0535
240
118 IXTQ74N20P
SK0515
160
119 IXTQ76N25T
SK0613
200
120 IXTQ80N28T
SK0519
224
121 IXTQ80N28T
SK0518
224
122 IXTQ82N25P
SK0450
200
123 IXTQ82N25P
SS0506
200
124 IXTQ82N25P
SK0514
200
125 IXTQ82N25P
SK0519
200
126 IXTQ82N25P
SK0519
200
127 IXTQ82N25P
SK0538
240
128 IXTQ82N25T
SK0603
200
129 IXTQ88N28T
SK0545
224
130 IXTQ88N30P
SK0515
240
131 IXTQ88N30P
K0525Z
240
132 IXTQ88N30P
SK0538
240
133 IXTQ88N30P
SK0605
240
134 IXTQ88N30T
SK0638
240
135 IXTQ96N15P
SK0449
120
136 IXTQ96N15P
SK0513
120
137 IXTQ96N20P
SS0631
160
138 IXTT88N30P
SP0626
240
139 IXTV18N60PS
SP0636
480
140 IXUC200N055
1594
44
141 IXUN350N10
1354
80
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
20
10
Failures
TABLE 1B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 GWM120-0075P3
1720
2 GWM160-0055P3
1524
3 MKI75-06A7T
1368
4 MUBW15-12A6K
1431
5 MUBW25-06A6K
1240
6 MUBW30-12E6K
1127
7 MUBW30-12E6K
1127
8 MUBW35-12E7
1242
9 MUBW50-06A7T
1144
10 MUBW50-12T8
1777
11 MWI50-12E7
1380
12 MWI60-06G6K
1347
13 VII130-06P1
1274
14 VMM90-09F
1201
15 VMO60-05F
1552
Temp.
[°C]
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
168
168
1000
1000
168
168
168
168
1000
168
500
168
168
168
Sample
Size
77
6
8
10
10
10
10
9
10
10
6
10
10
10
10
Failures
IXYS Semiconductor GmbH
Voltage
[V]
60
44
480
960
480
960
1120
1120
480
960
960
480
480
720
400
7
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
20000
10000
Remark
Device Hours
[hrs]
77000
1008
1344
10000
10000
1680
1680
1512
1680
10000
1008
5000
1680
1680
1680
Remark
TABLE 1C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC 161-22io1
1416
2 MCC122-16
1023
3 MCC132-16io1
1509
4 MCC162
1175
5 MCC162
1624
6 MCC162-16io1
1593
7 MCC21-16io8
1812
8 MCC26-16io1
1539
9 MCC310-16
1696
10 MCC312-16io1
1170
11 MCC44-18io8
1359
12 MCC44-18io8
1359
13 MCC44-16io1
1747
14 MCC44-18io8
1232
15 MCC44-18io8
1232
16 MCC56-16io8
1246
17 MCC95-16io1
1421
18 MCC95-16io1
1701
19 MCD56-16io1
1587
20 MCO100-16io1
1156
21 MCO25-16io1
1155
22 MCO50-16io1
1154
23 MDD172-16n1
1554
24 MDD26-16
1173
25 MDD26-16
1173
Voltage
[V]
1540
1120
1120
1120
800
1120
1120
1120
1120
1120
1260
1260
1120
1260
1260
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
Temp.
[°C]
125
130
125
125
126
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
125
Time
[hrs]
168
1000
1000
168
168
168
168
168
168
168
168
168
168
1000
1000
168
1000
168
168
1000
1000
1000
168
1000
168
Sample
Size
9
10
10
10
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
20
20
10
10
10
10
Failures
TABLE 1D: Controller/Rectifier Bridge
Date Code
# Part Number
or
Test #
1 MMO75-16io1
1379
2 MMO75-16io1
1727
3 MMO90-16
1710
4 VBO19-16DTI
1584
5 VHF36-16io5
1176
6 VHF36-16io5
1542
7 VHF36-16io5
1732
8 VHFD37-16
1184
9 VUB72-16
1657
10 VUO121-16NO1
1352
11 VUO25-16NO8
1581
12 VUO36-16NO8
1252
13 VUO36-16NO8
1252
14 VUO52-18N01
1286
15 VWO140-16
1684
16 VWO140-16io1
1420
17 VY40-16io1
1745
Voltage
[V]
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
1120
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
125
125
Time
[hrs]
168
168
168
168
168
168
168
168
168
1000
168
1000
168
168
1000
168
168
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
IXYS Semiconductor GmbH
8
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
1512
10000
10000
1680
3360
1680
1680
1680
1680
1680
1680
1680
1680
10000
10000
1680
10000
1680
1680
20000
20000
10000
1680
10000
1680
Device Hours
[hrs]
1680
1680
1680
1680
1680
1680
1680
1680
1680
10000
1680
10000
1680
1680
10000
1680
1680
Remark
I_R @1000h
Remark
TABLE 1E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
DHF30IM600PN
DHF30IM600QB
DHG10I1200PM
DHG10I600PM
DHG20C600QB
DHG30I1200HA
DHG30I1200HA
DHG60C600HB
DPG15I400PM
DPG20C200PN
DPG20C400PN
DPG30C300HB
DPG60C200QB
DPG60C300HB
DPG60C300QB
DPG60C400QB
DPG60IM300PC
DSEC240-04A
DSEC240-06A
DSEC240-06A
DSEC59-02AQ
DSEC59-03AQ
DSEC60-03AR
DSEE15-12CC
DSEI20-12A
DSEI2x101-06A
DSEI2x31-06C
DSEI2x61-12B
DSEP15-12CR
DSEP15-12CR
DSEP29-06A
DSEP29-06B
DSEP30-12AR
DSEP60-03A
DSEP60-06A
DSEP60-12A
DSEP75-06AR
DSEP8-02A
DSEP8-03AS
MEK300-06"DA"
MEK95-06 DA
MEO500-06DA
Date Code
or
Test #
1508
1625
1682
1685
1711
1652
1734
1668
1770
1692
1768
1644
1608
1525
1481
1446
1643
1148
1215
1215
1159
1266
1121
1220
1169
1235
1563
1607
1168
1168
1736
1263
1634
1537
1572
1118
1619
1362
1738
1381
1312
1279
Voltage
[V]
480
480
960
480
480
960
960
480
320
240
320
240
160
240
240
320
240
320
480
480
160
240
240
480
960
480
480
960
960
960
480
480
960
240
480
960
480
160
240
480
480
480
Temp.
[°C]
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
1000
1000
168
1000
168
168
168
168
168
1000
168
168
168
168
168
168
1000
168
1000
168
168
1000
Sample
Size
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
10
10
20
20
20
20
20
10
10
10
20
20
20
20
20
20
20
20
20
20
20
10
10
10
Failures
Date Code
or
Test #
1507
1714
1781
1782
1674
1622
1718
1783
1672
1673
1143
1709
1225
1467
1401
1723
Voltage
[V]
150
45
100
100
200
36
24
36
60
12
100
100
200
100
45
120
Temp.
[°C]
125
125
125
125
125
100
100
100
125
100
125
125
125
125
125
150
Time
[hrs]
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
168
1000
1000
168
1000
1000
Sample
Size
20
20
16
20
20
20
20
20
20
20
20
20
10
10
20
77
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
20000
3360
10000
10000
20000
20000
3360
20000
3360
1680
1680
1680
3360
20000
3360
3360
3360
3360
3360
3360
20000
3360
20000
1680
1680
10000
Remark
Device Hours
[hrs]
20000
20000
16000
20000
20000
20000
20000
20000
20000
20000
3360
20000
10000
1680
20000
77000
Remark
TABLE 1F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
DSA120C150QB
DSA30C45HB
DSA60C100PB
DSA70C100HB
DSA90C200HB
DSB15IM45IB
DSB30C30PB
DSB30C45PB
DSB30C60PB
DSB40C15PB
DSS160-01A
DSS20-01AC
DSS2x101-02A
DSS2x41-01A
DSS31-0045A
DSS6-015AS
IXYS Semiconductor GmbH
9
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
TABLE 1F (cont'd): Schottky Diode
Date Code
# Part Number
or
Test #
17 DSS61-0045A
1238
18 DSSK60-015A
1256
19 DSSK60-015A
1600
20 DSSK60-015AR
1384
21 DSSK60-02A
1187
22 DSSK70-008A
1377
23 DSSK80-0045B
1261
Voltage
[V]
45
150
150
150
200
80
36
Temp.
[°C]
125
125
125
125
125
125
100
Time
[hrs]
1000
1000
168
1000
1000
168
168
Sample
Size
20
20
20
20
20
20
20
Failures
TABLE 1G: Thyristor/Diode single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1 CS19-12ho1S
1366
840
2 CS20-14io1
1364
980
3 CS45-16io1
1808
1120
4 CS8-12io2
1605
1280
5 DSA17-16A
1195
1120
6 DSA17-16A
1195
1120
7 DSA9-18F
1307
1260
8 DSDI60-16A
1569
1280
9 DSP25-16
1564
1120
10 DSP45-16A
1167
1120
11 DSP8-08A
1146
560
Temp.
[°C]
125
125
125
125
150
150
125
125
150
125
150
Time
[hrs]
1000
1000
168
168
1000
1000
168
168
168
168
168
Sample
Size
20
20
20
10
20
20
10
20
20
20
20
Failures
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
20000
20000
3360
20000
20000
3360
3360
Remark
Device Hours
[hrs]
20000
20000
3360
1680
20000
20000
1680
3360
3360
3360
3360
Remark
Device Hours
[hrs]
3360
3360
20000
3360
20000
3360
20000
1848
20000
20000
20000
77000
1008
1680
2620
3360
20000
20000
20000
3360
20000
20000
Remark
Device Hours
[hrs]
3360
3360
3360
Remark
TABLE 1H: ISOPLUS
Date Code
or
Test #
1808
1121
1220
1168
1168
1634
1619
1264
1709
1384
1291
1720
1524
1611
1611
1400
1769
1590
1281
1521
1594
1675
Voltage
[V]
1120
240
480
960
960
960
480
1120
100
150
1120
60
44
3000
2200
960
640
640
480
640
44
480
Temp.
[°C]
125
125
125
125
150
125
125
150
125
125
125
150
150
125
125
125
125
125
125
125
125
150
Time
[hrs]
168
168
1000
168
1000
168
1000
168
1000
1000
1000
1000
168
168
262
168
1000
1000
1000
168
1000
1000
Sample
Size
20
20
20
20
20
20
20
11
20
20
20
77
6
10
10
20
20
20
20
20
20
20
Failures
TABLE 1J: Breakover Diode
Date Code
# Part Number
or
Test #
1 IXBOD1-08
1248
2 IXBOD1-09
1800
3 IXBOD1-10
1576
Voltage
[V]
640
800
800
Temp.
[°C]
125
125
125
Time
[hrs]
168
168
168
Sample
Size
20
20
20
Failures
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
CS45-16io1
DSEC60-03AR
DSEE15-12CC
DSEP15-12CR
DSEP15-12CR
DSEP30-12AR
DSEP75-06AR
DSI45-16AR
DSS20-01AC
DSSK60-015AR
FUO22-16N
GWM120-0075P3
GWM160-0055P3
IXEL40N400
IXEL40N400
IXER35N120D1
IXKC13N80C
IXKC25N80C
IXKC40N60C
IXKR25N80C
IXUC200N055
LKK47-06C5
IXYS Semiconductor GmbH
10
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
HTGB (Tables 2A .. 2C)
TABLE 2A: MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
1
IXDN75N120
1606
16
2
IXEH25N120D1
1757
16
3
IXEH40N120D1
1482
16
4
IXFH10N80P
SP0514
16
5
IXFH12N80P
SK0524
16
6
IXFH13N50
CK0539
16
7
IXFH14N80P
SP0525
16
8
IXFH15N80
MP0510
16
9
IXFH20N60
SK0446
16
10 IXFH20N60
MK0537
16
11 IXFH20N80P
SK0524
16
12 IXFH22N50P
N/A
16
13 IXFH23N80Q
MP0510
16
14 IXFH26N50Q
MK0532
16
15 IXFH26N60Q
SK0451
16
16 IXFH26N60Q
SK0604
16
17 IXFH40N30Q
SP0543
16
18 IXFH44N50P
SP0518
16
19 IXFH50N20
SK0538
16
20 IXFH69N30P
SK0527
16
21 IXFH80N10Q
SK0510
16
22 IXFK34N80
AP0526
16
23 IXFK64N50P
SP0518
16
24 IXFL100N50P
SP0549
16
25 IXFL82N60P
SP0550
16
26 IXFP12N50PM
K550
16
27 IXFR36N60P
SP0517
16
28 IXFX32N80P
SP0531
16
29 IXFX48N50Q
SK0543
16
30 IXFX48N50Q
ZP0545
16
31 IXFX48N60P
SP0518
16
32 IXFX52N60Q2
TM3849
16
33 IXFX73N30Q
SK0613
16
34 IXFX90N30
SK0613
16
35 IXGD86N30PCD1
SK0529
16
36 IXGH240N30PC
SP0537
16
37 IXGH28N60B3
SK0608
16
38 IXGH30N120B3
TP0606
16
39 IXGH48N60B3
SK0607
16
40 IXGH64N60B3
SK0608
16
41 IXGH72N60B3
SK0608
16
42 IXGQ120N30TCD1
SK0631
16
43 IXGQ150N30TCD1
SK0631
16
44 IXGQ160N30P
SK0503
16
45 IXGQ160N30PB
SK0601
16
46 IXGQ160N30PB
SK0601
16
47 IXGQ160N30PB
SK0601
16
48 IXGQ160N30PB
SK0601
16
49 IXGQ180N30TCD1
SK0632
16
50 IXGQ200N30PB
SK0631
16
51 IXGQ240N30PB
SK0631
16
52 IXGQ85N33PCD1
SK0613
16
53 IXGQ85N33PCD1
SK0638
16
54 IXGQ90N27PB
SK0611
16
55 IXGQ90N27PB
SK0640
16
56 IXGQ90N30TCD1
SK0631
16
57 IXGR40N60C2D1
SP0635
16
58 IXKP13N60C5M
1716
16
IXYS Semiconductor GmbH
Temp.
[°C]
150
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
150
Time
[hrs]
168
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
11
Sample
Size
10
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
27
30
30
30
30
30
20
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
1680
3360
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
27000
30000
30000
30000
30000
30000
20000
Remark
TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number
or
Voltage
Test #
[V]
59 IXKR40N60C
1287
16
60 IXLF19N250
1142
16
61 IXLF19N250A
1292
16
62 IXTA36N30P
SK0509
16
63 IXTA36N30P
K0526
16
64 IXTA36N30P
K0537
16
65 IXTA36N30P
SK0603
16
66 IXTA36N30P
K0621
16
67 IXTA36N30P
K640
16
68 IXTA50N25T
K545
16
69 IXTA50N25T
SK0604
16
70 IXTA50N28T
K545
16
71 IXTA50N28T
K0606
16
72 IXTA50N28T
K634
16
73 IXTA50N28T
K640
16
74 IXTA60N20T
K545
16
75 IXTA60N20T
SK0601
16
76 IXTA75N10P
K0531
16
77 IXTH1N250
TP0638
16
78 IXTH75N15
SK0450
16
79 IXTH75N15
SK0515
16
80 IXTK34N80
SP0546
16
81 IXTK62N25
SS0444
16
82 IXTK62N25
SS0516
16
83 IXTK62N25
SS0524
16
84 IXTP14N60PM
K631
16
85 IXTP14N60PM
K643
16
86 IXTP18N60PM
K631
16
87 IXTP8N50P
K646
16
88 IXTQ22N50P
SS0633
16
89 IXTQ22N60P
SK0539
16
90 IXTQ22N60P
SK0604
16
91 IXTQ26N50P
SK0604
16
92 IXTQ30N60P
SK0517
16
93 IXTQ64N25P
SK0535
16
94 IXTQ69N30P
SK0450
16
95 IXTQ69N30P
SK0535
16
96 IXTQ74N20P
SK0515
16
97 IXTQ76N25T
SK0613
16
98 IXTQ80N28T
SK0519
16
99 IXTQ80N28T
SK0519
16
100 IXTQ82N25P
SK0450
16
101 IXTQ82N25P
SK0514
16
102 IXTQ82N25P
SK0538
16
103 IXTQ82N25T
SK0514
16
104 IXTQ82N25T
SK0603
16
105 IXTQ88N30P
SK0515
16
106 IXTQ88N30P
K0525Z
16
107 IXTQ88N30P
SK0538
16
108 IXTQ88N30P
SK0605
16
109 IXTQ88N30T
SK0638
16
110 IXTQ96N15P
SK0449
16
111 IXTQ96N15P
SK0513
16
112 IXTQ96N20P
SS0631
16
113 IXTT88N30P
SP0626
16
114 IXTV18N60PS
SP0636
16
IXYS Semiconductor GmbH
Temp.
[°C]
150
150
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
12
Sample
Size
25
10
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
4200
1680
20000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 GWM120-0075P3
1720
2 GWM160-0055P3
1371
3 MDI300-12A4
1555
4 MII400-12E4
1741
5 MII75-12A3
1541
6 MUBW15-12A6K
1553
7 MUBW30-12E6K
1127
8 MUBW35-12E7
1285
9 MUBW50-12E8
1469
10 MWI30-06A7T
1635
11 VII130-06P1
1274
12 VMO1200-01F
1442
13 VMO440-02F
1308
14 VMO440-02F
1308
15 VWM350-0075
1288
Voltage
[V]
16
16
16
16
16
16
16
16
16
16
20
16
20
16
16
Temp.
[°C]
150
150
125
125
125
125
150
125
125
125
150
125
125
150
150
Time
[hrs]
1000
168
126
168
168
168
168
168
168
168
168
1000
168
168
168
Sample
Size
77
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
Voltage
[V]
16
16
16
16
16
16
16
16
Temp.
[°C]
150
150
125
125
125
150
150
150
Time
[hrs]
1000
168
1000
1000
1000
168
168
1000
Sample
Size
77
10
30
30
30
25
10
20
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
77000
1680
1260
1680
1680
1680
1680
1680
1680
1680
1680
10000
1680
1680
1680
Remark
Device Hours
[hrs]
77000
1680
30000
30000
30000
4200
1680
20000
Remark
TABLE 2C: ISOPLUS
#
1
2
3
4
5
6
7
8
Date Code
or
Test #
GWM120-0075P3SL
1720
GWM160-0055P3
1371
IXFL100N50P
SP0549
IXFL82N60P
SP0550
IXGR40N60C2D1
SP0635
IXKR40N60C
1287
IXLF19N250
1142
IXLF19N250A
1292
Part Number
IXYS Semiconductor GmbH
13
0
0
0
0
0
0
0
0
POWER CYCLE (Tables 3A ..3H)
TABLE 3A: MOSFET/IGBT single device
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 IXEH25N120D1
1277
125
2 IXFH80N10Q
SK0510
3 IXFX48N60P
SP0518
4 IXFX73N30Q
SK0613
5 IXFX90N30
SK0613
6 IXGQ160N30P
SK0503
7 IXGQ85N33PCD1
SK0614
8 IXGQ90N27PB
SK0611
9 IXKP13N60C5M
1716
125
10 IXTP14N60PM
K643
11 IXTQ26N50P
SK0604
12 IXTQ30N60P
SK0517
13 IXTQ76N25T
SK0613
14 IXTQ82N25P
SS0506
15 IXTQ96N20P
SS0631
-
∆Τ
[K]
80
100
125
125
125
125
125
125
80
50
125
125
125
100
100
Number
of
Cycles
2000
10000
10000
10000
10000
10000
10000
10000
10000
10000
10000
10000
10000
10000
10000
Sample
Size
20
24
24
24
24
24
24
24
20
24
24
24
24
24
24
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
40000
240000
240000
240000
240000
240000
240000
240000
200000
240000
240000
240000
240000
240000
240000
TABLE 3B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MKI75-06A7T
1464
2 MKI75-06A7T
1676
3 MKI75-06A7T
1772
4 MKI75-06A7T
1776
Tj(max)
[°C]
125
125
125
125
∆Τ
[K]
80
80
80
80
Number
of
Cycles
10000
10000
5000
10000
Sample
Size
10
10
10
10
Failures
Device Cycles
0
0
0
0
100000
100000
50000
100000
TABLE 3C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC162-14io1
1375
2 MCC56-14io1
1472
3 MCC95-12
1351
4 MCD40-16io6
1474
5 MDD172-16N1
1133
Tj(max)
[°C]
125
125
125
125
125
∆Τ
[K]
80
80
80
80
80
Number
of
Cycles
10000
20000
10000
5000
20000
Sample
Size
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
100000
200000
100000
50000
200000
TABLE 3D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 VUO28-08NO7
1249
125
2 VUO80-16
1456
125
3 VUO82-16NO7
1328
125
∆Τ
[K]
80
80
80
Number
of
Cycles
2000
5000
5000
Sample
Size
10
10
10
Failures
Device Cycles
0
0
0
20000
50000
50000
IXYS Semiconductor GmbH
14
Remark
Remark
Remark
Remark
TABLE 3E: FRED
Date Code
or
Test #
1699
1206
1755
1139
1440
1599
1378
1736
1633
1262
Tj(max)
[°C]
125
125
125
125
145
150
107
150
125
135
∆Τ
[K]
80
80
80
80
105
105
105
105
80
90
Number
of
Cycles
2000
2000
2000
5000
2000
2000
2000
2000
5000
2000
Sample
Size
20
20
20
10
20
20
20
20
10
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
40000
40000
40000
50000
40000
40000
40000
40000
50000
40000
Date Code
or
Test #
1621
1723
1238
1336
1256
1384
1223
1575
Tj(max)
[°C]
125
145
125
125
125
125
125
125
∆Τ
[K]
80
100
80
80
80
80
80
80
Number
of
Cycles
4000
8572
4000
2000
20000
10000
2000
2000
Sample
Size
20
77
20
20
20
20
20
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
80000
660044
80000
40000
400000
200000
40000
40000
TABLE 3G: Thyristor/Diode single device
Date Code
# Part Number
or
Tj(max)
Test #
[°C]
1 CS35-14io4
1473
125
2 CS45-12io1
1601
125
3 CS45-16io1
1165
125
4 CS8-12io2
1605
125
5 DSA1-18D
1435
150
6 DSI45-08A
1760
150
∆Τ
[K]
80
80
80
80
105
105
Number
of
Cycles
2000
5000
2000
2000
2000
2000
Sample
Size
10
20
20
10
20
20
Failures
Device Cycles
0
0
0
0
0
0
20000
100000
40000
20000
40000
40000
∆Τ
[K]
80
Number
of
Cycles
10000
Sample
Size
20
Failures
Device Cycles
0
200000
#
Part Number
1
2
3
4
5
6
7
8
9
10
DH60-18A
DSEC30-02A
DSEC30-02A
DSEI2x101-06A
DSEI60-02A
DSEI60-12A
DSEP15-06A
DSEP29-06A
DSEP2x61-06A
DSEP60-06A
Remark
TABLE 3F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
DSA15IM45IB
DSS6-015AS
DSS61-0045A
DSSK40-0015B
DSSK60-015A
DSSK60-015AR
DSSK80-0045B
DSSK80-006B
Remark
Remark
TABLE 3H: ISOPLUS
#
Part Number
1
DSSK60-015AR
IXYS Semiconductor GmbH
Date Code
or
Test #
1384
Tj(max)
[°C]
125
15
Remark
TEMPERATURE CYCLE (Tables 4A ..4J)
TABLE 4A: MOSFET/IGBT single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 FII50-12EL
1294
-55
2 FII50-12EL
1534
-55
3 FMM151-0075P
1145
-55
4 IRFP450
CK 0420
-55
5 IXBH9N160G
1574
-55
6 IXBP5-N160G
1337
-55
7 IXDD404SIA
1695
-55
8 IXDN404SI
SC 351
-55
9 IXDN75N120
1606
-40
10 IXDR30N120D1
1411
-55
11 IXER35N120D1
1207
-55
12 IXFF24N100
1390
-55
13 IXFH21N50Q
MP 0423
-55
14 IXFH24N50
MP 0419
-55
15 IXKC13N80C
1769
-55
16 IXKC25N80C
1590
-55
17 IXKC40N60C
1281
-55
18 IXKP10N60C5M
1693
-40
19 IXKP13N60C5M
1716
-55
20 IXKR25N80C
1189
-40
21 IXLF19N250A
1292
-55
22 IXTM1N100
TP 0423
-55
23 IXTM1N100
TP 0423
-55
24 IXTM1N100
TP 0424
-55
25 IXTN79N20
1140
-40
26 IXTQ64N25P
SK 0414
-55
27 IXTQ69N30P
SK 0342
-65
28 IXTQ69N30P
SK 0411
-55
29 IXTQ96N15P
SK 0412
-55
30 IXUC200N055
1802
-55
High
Temp.
[°C]
150
150
150
125
150
150
150
150
150
150
150
150
125
125
150
150
150
150
150
150
150
125
125
125
150
150
155
150
150
150
Number
of
Cycles
100
100
100
100
50
50
500
1000
20
50
50
100
100
100
100
100
100
100
100
50
100
100
100
100
50
250
100
250
250
90
Sample
Size
20
20
20
30
20
20
30
80
10
20
20
20
30
30
20
20
20
20
20
20
20
32
32
32
10
30
30
30
30
50
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2000
2000
2000
3000
1000
1000
15000
80000
200
1000
1000
2000
3000
3000
2000
2000
2000
2000
2000
1000
2000
3200
3200
3200
500
7500
3000
7500
7500
4500
TABLE 4B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MDI300-12A4
1555
2 MII400-12E4
1741
3 MII75-12A3
1541
4 MKI50-06A7
1172
5 MKI75-06A7T
1562
6 MKI75-06A7T
1724
7 MKI75-06A7T
1724
8 MUBW15-12A7
1466
9 MUBW30-12A6K
1373
10 MUBW35-06A6
1244
11 MUBW35-12E7
1285
12 MUBW75-12T8
1731
13 MWI50-06A7T
1144
14 VMM90-09F
1201
15 VMO1200-01F
1442
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
125
150
150
150
150
150
Number
of
Cycles
50
50
50
50
50
50
50
50
50
100
50
100
100
50
100
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
500
500
500
500
500
500
500
500
500
1000
500
1000
1000
500
1000
IXYS Semiconductor GmbH
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
16
Remark
Remark
TABLE 4C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC162
1175
2 MCC162-14
1816
3 MCC162-14io1
1544
4 MCC162-14io1
1629
5 MCC200-14
1717
6 MCC21
1821
7 MCC255-14io1
1120
8 MCC26-12io1
1255
9 MCC26-14io1
1641
10 MCC26-16
1389
11 MCC26-16io1
1324
12 MCC26-16io1
1333
13 MCC310-12io1
1545
14 MCC310-14io1
1627
15 MCC312, MCC255
1202
16 MCC312-16
1302
17 MCC312-16
1302
18 MCC44-12io1
1540
19 MCC44-16io1
1181
20 MCC56-12io1
1449
21 MCC95
1361
22 MCC95
1361
23 MCC95-12
1389
24 MCC95-14io1
1788
25 MCC95-16
1278
26 MCD200-12io1
1586
27 MCD310-12
1257
28 MCD56-16io1
1646
29 MCD95-16io1
1342
30 MCO25-16io1
1155
31 MCO450-14io1
1418
32 MCO50-16io1
1154
33 MCO600-16io1
1680
34 MDD172-16
1372
35 MDD172-16N1
1133
36 MDD26-18N1
1749
37 MDD26-18N1
1749
38 MDD95-16
1585
39 MDI300-12A4
1555
Low
Temp.
[°C]
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
50
50
50
50
100
50
50
50
100
100
100
50
50
100
200
200
50
50
50
100
200
100
150
100
50
50
50
50
50
50
50
50
50
100
100
100
50
50
Sample
Size
10
10
10
10
10
20
10
10
10
10
10
10
10
10
6
10
5
10
10
10
10
10
40
10
10
10
10
10
10
20
10
10
10
10
10
20
20
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
500
500
500
500
500
2000
500
500
500
1000
1000
1000
500
500
600
2000
1000
500
500
500
1000
2000
4000
1500
1000
500
500
500
500
1000
500
500
500
500
1000
2000
2000
500
500
TABLE 4D: Controller, Rectifier Bridge
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 MMO230-16
1543
-40
2 MMO74-12io6
1615
-55
3 VBO19-16DT1
1272
-40
4 VBO19-16DT1
1648
-40
5 VBO25-12NO2
1726
-40
6 VUB120-16NO2
1300
-40
7 VUB120-16NO2
1636
-40
8 VUO28-08NO7
1249
-40
9 VUO36-16
1428
-40
10 VUO36-16nO8
1580
-40
11 VUO80-16
1778
-40
12 VVY40-16io1
1679
-40
13 VVZ40-14
1691
-40
14 VW2x60-14
1443
-40
15 VWO85-12
1570
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
125
Number
of
Cycles
150
300
50
50
50
50
50
10
40
10
100
50
100
50
50
Sample
Size
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1500
3000
500
500
500
500
500
100
400
100
1000
500
1000
500
500
IXYS Semiconductor GmbH
17
Remark
Remark
TABLE 4E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
DH60-18A
DHG10I600PM
DHH55-36N1F
DPG15I400PM
DSEC29-06AC
DSEC30-02A
DSEC30-06A
DSEC59-02AQ
DSEC60-03AR
DSEE29-06CC
DSEI 2x121-02A
DSEI120-12A
DSEI120-12A
DSEI120-12A
DSEI120-12A
DSEI20-12A
DSEI2x31-06C
DSEI30-10A
DSEI36-06AS
DSEI60-06A
DSEP15-12CR
DSEP25-16AR
DSEP29-06B
DSEP2x25-12C
DSEP30-06BR
DSEP40-03AS
DSEP8-03AS
DSEP8-12A
DSEP9-06CR
MEK150-04E
MEK300-06
MEO500-06DA
Date Code
or
Test #
1568
1685
1604
1770
1204
1339
1269
1159
1121
1771
1397
1174
1538
1756
1174
1169
1563
1126
1190
1804
1514
1712
1263
1468
1700
1268
1738
1438
1437
1365
1737
1279
Low
Temp.
[°C]
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-40
-40
-40
-40
-40
-40
-40
-40
-40
-40
-55
-40
-50
-40
-55
-55
-40
-55
-55
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
100
100
100
100
50
100
100
50
100
20
200
50
50
200
100
20
50
100
50
50
50
50
50
50
100
100
50
50
50
50
50
Sample
Size
20
20
40
20
20
20
20
20
20
20
10
10
20
20
10
20
10
20
20
20
20
20
20
10
20
20
20
20
20
10
10
10
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1000
2000
4000
2000
2000
1000
2000
2000
1000
2000
200
2000
1000
1000
2000
2000
200
1000
2000
1000
1000
1000
1000
500
1000
2000
2000
1000
1000
500
500
500
Date Code
or
Test #
1674
1622
1709
1117
1492
1131
1723
1238
1807
1557
1260
1166
1457
1256
1304
1573
1591
1187
1394
1119
1575
Low
Temp.
[°C]
-55
-55
-55
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
100
100
100
100
500
100
1000
100
50
50
50
50
50
100
100
50
200
100
50
100
50
Sample
Size
20
20
20
20
77
20
77
20
20
20
20
20
20
20
20
20
40
20
20
20
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2000
2000
2000
2000
38500
2000
77000
2000
1000
1000
1000
1000
1000
2000
2000
1000
8000
2000
1000
2000
1000
Remark
TABLE 4F: Schottky Diode
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
DSA90C200HB
DSB15IM45IB
DSS20-01AC
DSS2x160-01A
DSS31-0045A SN
DSS40-0008D
DSS6-015AS
DSS61-0045A
DSSK30-01A
DSSK40-0015B
DSSK40-008B
DSSK50-01A
DSSK60-0045B
DSSK60-015A
DSSK60-015AR
DSSK60-015AR
DSSK60-015AR
DSSK60-02A
DSSK80-0008D
DSSK80-0025B
DSSK80-006B
IXYS Semiconductor GmbH
18
Remark
TABLE 4G: Thyristor/Diode single device
Date Code
Low
# Part Number
or
Temp.
Test #
[°C]
1 CS19-12H01
1404
-40
2 CS20-14io1
1364
-40
3 CS30-16io1DCSN
1820
-40
4 CS35-14io4
1473
-40
5 CS45-12io1
1199
-40
6 CS45-16io1
1598
-40
7 CS45-16io1R
1284
-40
8 CS8-12io2
1388
-40
9 CS8-12io2
1605
-40
10 DS75-04D
1243
-40
11 DSA17-16A
1703
-40
12 DSA17-16A
1195
-40
13 DSA17-16A
1195
-40
14 DSA2-18A
1398
-40
15 DSA35-16A
1566
-40
16 DSA75-18B
1388
-40
17 DSA9-18F
1307
-40
18 DSI45-12A
1805
-40
19 DSI75-16
1160
-40
20 DSP25-16
1564
-40
21 DSP25-16A
1639
-40
22 DSP25-16A
1273
-40
23 DSP8-08A
1146
-40
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
100
100
20
50
50
50
50
20
50
20
100
100
20
20
50
20
50
20
50
50
50
50
Sample
Size
20
20
20
10
20
20
20
20
10
10
20
18
20
20
10
20
10
20
10
20
20
20
20
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1000
2000
2000
200
1000
1000
1000
1000
200
500
400
1800
2000
400
200
1000
200
1000
200
1000
1000
1000
1000
Remark
TABLE 4H: ISOPLUS
Date Code
or
Test #
1284
1604
1204
1121
1771
1514
1712
1700
1437
1709
1304
1573
1842
1294
1534
1145
1720
1448
1411
1207
1390
1769
1590
1281
1189
1292
1802
Low
Temp.
[°C]
-40
-55
-55
-55
-55
-55
-40
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-55
-40
-55
-55
High
Temp.
[°C]
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
Number
of
Cycles
50
100
100
50
100
50
50
50
50
100
100
50
100
100
100
100
1000
1000
50
50
100
100
100
100
50
100
90
Sample
Size
20
40
20
20
20
20
20
20
20
20
20
20
22
20
20
20
80
10
20
20
20
20
20
20
20
20
50
Failures
Device Cycles
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1000
4000
2000
1000
2000
1000
1000
1000
1000
2000
2000
1000
2200
2000
2000
2000
80000
10000
1000
1000
2000
2000
2000
2000
1000
2000
4500
TABLE 4J: Breakover Diode
Date Code
# Part Number
or
Test #
1 IXBOD1-08
1248
2 IXBOD1-09
1340
3 IXBOD1-09
1800
4 IXBOD1-10
1576
Low
Temp.
[°C]
-40
-40
-40
-40
High
Temp.
[°C]
150
150
150
150
Number
of
Cycles
50
50
50
50
Sample
Size
20
20
20
20
Failures
Device Cycles
0
0
0
0
1000
1000
1000
1000
#
Part Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
CS45-16io1R
DHH55-36N1F
DSEC29-06AC
DSEC60-03AR
DSEE29-06CC
DSEP15-12CR
DSEP25-16AR
DSEP30-06BR
DSEP9-06CR
DSS20-01AC
DSSK60-015AR
DSSK60-015AR
DWP25-16/18AL
FII50-12EL
FII50-12EL
FMM151-0075P
GWM120-0075P3
GWM70-01P2
IXDR30N120D1
IXER35N120D1
IXFF24N100
IXKC13N80C
IXKC25N80C
IXKC40N60C
IXKR25N80C
IXLF19N250A
IXUC200N055
IXYS Semiconductor GmbH
19
Remark
Remark
HUMIDITY TEST (Tables 5A ..5H)
TABLE 5A: MOSFET/IGBT single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 IXBH40N140
1188
121
2 IXDD404SIA
1695
121
3 IXKP13N60C5M
1716
85
4 IXKP13N60C5M
1687
121
Rel. H.
[%]
100
100
85
100
Time
[hrs]
48
96
1000
96
Sample
Size
20
30
20
10
Failures
TABLE 5B: MOSFET/IGBT Module
Date Code
# Part Number
or
Test #
1 MUBW25-06A6K
1240
2 MWI30-12E6K
1200
3 VMO1200-01F
1442
4 VMO440-02F
1308
Temp.
[°C]
85
85
85
85
Rel. H.
[%]
85
85
85
85
Time
[hrs]
1000
168
1000
168
Sample
Size
10
10
10
10
Failures
Temp.
[°C]
85
85
85
85
Rel. H.
[%]
85
85
85
85
Time
[hrs]
168
168
168
168
Sample
Size
10
10
10
10
Failures
TABLE 5D: Controller, Rectifier Bridge
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 VHF36-16
1654
85
2 VHF36-16io5
1176
85
3 VUO82-16NO7
1251
85
4 VUO82-16NO7
1251
85
Rel. H.
[%]
85
85
85
85
Time
[hrs]
168
168
168
168
Sample
Size
10
10
10
10
Failures
TABLE 5C: Thyristor/Diode Module
Date Code
# Part Number
or
Test #
1 MCC310-16io1
1171
2 MCC44-12io1
1748
3 MCD56-16io1B
1193
4 MCD56-16io8
1341
5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
960
2880
20000
960
Remark
Device Hours
[hrs]
10000
1680
10000
1680
Remark
Device Hours
[hrs]
1680
1680
1680
1680
0
Remark
Device Hours
[hrs]
1680
1680
1680
1680
Remark
Device Hours
[hrs]
960
768
1920
960
1920
1920
960
960
960
1680
Remark
Device Hours
[hrs]
1920
7392
7392
1920
1920
Remark
TABLE 5E: FRED
#
Part Number
1
2
3
4
5
6
7
8
9
10
DH60-18A
DPG60C400QB
DSEC59-02AQ
DSEC60-03AR
DSEI2x61-12B
DSEI36-06AS
DSEI8-06AS
DSEP15-12CR
DSEP30-06BR
MEO450-12DA
Date Code
or
Test #
1297
1446
1159
1121
1607
1190
1535
1168
1536
1742
Temp.
[°C]
121
121
121
121
121
121
121
121
121
85
Rel. H.
[%]
100
100
100
100
100
100
100
100
100
85
Time
[hrs]
48
96
96
48
96
96
48
48
48
168
Sample
Size
20
8
20
20
20
20
20
20
20
10
Failures
Date Code
or
Test #
1622
1492
1723
1238
1256
Temp.
[°C]
121
121
121
121
121
Rel. H.
[%]
100
100
100
100
100
Time
[hrs]
96
96
96
96
96
Sample
Size
20
77
77
20
20
Failures
0
0
0
0
0
0
0
0
0
0
TABLE 5F: Schottky Diode
#
Part Number
1
2
3
4
5
DSB15IM45IB
DSS31-0045A SN
DSS6-015AS
DSS61-0045A
DSSK60-015A
IXYS Semiconductor GmbH
20
0
0
0
0
1
I_R @ 96h
TABLE 5G: Thyristor/Diode single device
Date Code
# Part Number
or
Temp.
Test #
[°C]
1 CS45-12io1
1754
121
2 DSDI60-14A
1806
121
Rel. H.
[%]
100
100
Time
[hrs]
48
48
Sample
Size
20
20
Failures
0
0
Device Hours
[hrs]
960
960
Remark
Device Hours
[hrs]
960
960
960
960
0
Remark
Device Hours
[hrs]
960
960
960
960
Remark
TABLE 5H: ISOPLUS
Date Code
or
Test #
1121
1168
1536
1188
Temp.
[°C]
121
121
121
121
Rel. H.
[%]
100
100
100
100
Time
[hrs]
48
48
48
48
Sample
Size
20
20
20
20
Failures
TABLE 5J: Breakover diode
Date Code
# Part Number
or
Test #
1 IXBOD1-08
1248
2 IXBOD1-09
1340
3 IXBOD1-09
1800
4 IXBOD1-10
1576
Temp.
[°C]
121
121
121
121
Rel. H.
[%]
100
100
100
100
Time
[hrs]
48
48
48
48
Sample
Size
20
20
20
20
Failures
#
Part Number
1
2
3
4
5
DSEC60-03AR
DSEP15-12CR
DSEP30-06BR
IXBH40N140
IXYS Semiconductor GmbH
21
0
0
0
0
0
0
0
0