FM120-M+ 1SS400CST5 WILLAS THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE SWITCHING Diodes PbCOMPANY, Free Product LESHAN RADIO LTD. SOD-923 Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Applications .030(0.75) • Low profile surface mounted application in order to .033(0.85) High optimize speed switching board space. L1SS400GT1G • Applications 0.146(3.7) • Low power loss, high efficiency. • Features High speed switching 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. 1) Extremely small surface mounting type. • Features 1 .013(0.34) • High surge capability. .017(0.43) 1) Extremely small surface mounting type. 2) High Speed.for overvoltage protection. • Guardring 2) High Speed. 0.071(1.8) high-speed switching. • Ultra 3) High reliability. 3) High reliability. 0.056(1.4) 2 .037(0.95) • Silicon epitaxial planar chip, metal silicon junction. • Construction .041(1.05) • Construction of epitaxial planar • Lead-free parts meet environmental standardsSilicon SOD - 723 /228 SiliconMIL-STD-19500 epitaxial planar • We declare that the material of product • RoHS product for packing code suffix "G" Pb-Free package is available Halogen free product for packing code suffix "H" compliance with RoHS requirements. 1 2 RoHS product for packing CATHODE ANODE Mechanical datacode suffix "G" • Device Marking .012(0.30) 0.040(1.0) L1SS400GT1G=3 Halogen free product for packing code suffix "H" 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Moisture Sensitivity Level 1 • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , Dimensions in inches and (millimeters) • Terminals :Plated terminals, solderable per MIL-STD-750 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Marking code: 3RU Method 2026 Parameter Symbol Peak reverse voltage DC reverse voltage Peak forward current .022(0.55) .026(0.65) .003(0.07) .007(0.17) .017(0.43) .013(0.34) .006(0.15) .01(0.25) .006(0.15) .011(0.27) Switching diode VRM VR I FM Limits Unit 90 V • Polarity : Indicated by cathode band 225 • Mounting Position : Any Mean rectifying current Maximum Ratings and Electrical Characteristics, Single Diode I@TA=25℃100 Surge current (1s) I 500 • Weight : Approximated 0.011 gram Junction temperature Tj 125 Parameter Storage temperature T Limits – 55 ~ +125 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ voltage ambient temperature unless otherwise 90 Peak reverse VRM specified. Dimensions in inches Vand (millimeters) 80 mA surge mA mA °C stg °C O Single phase half wave, 60Hz, resistive of inductive load. capacitivevoltage load, derate current by 20% DC VR Forreverse RATINGS IFM Maximum Recurrent Peak Reverse Voltage Mean rectifying current VRRM 20 30 VRMS 14 21 28 20 30 Maximum DC Blocking Voltage Surge current (1s) VDC Isurge Junction temperature T j Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating/Storage temperature TSTG Parameter Symbol Forward voltage Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ VF VF IR CT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2016-03 2012-06 Unit V Conditions I F=100mA V – 100 16– 60 10 100 70 50 500 Shipping 60 80 100 -55~+125 1.0 30 mA mA U 115 150 Ω 120 200 V 105 140 V 150 200 V A ℃ A 40 120 ℃ ℃ P -55 to +150 Unit mA VR=6V , IF=10mA , RL=100 56 125 Max. ns 42 -55 to +125 Typ. 18 80 35 Min. 4 - 65 to +175 Conditions 1/3 U SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH NOTES: Capacitance between terminals Reverse recovery 2- Thermal Resistance Fromtime Junction to Ambient 15 50 4000/Tape&Reel 3 TJ A 40 Marking L1SS400GT1G CJ CHARACTERISTICS Device RΘJA Operating Temperature Range=25℃ Electrical Ratings @T Reverse current Rated DC Blocking Voltage ORDRING INFORMATION 225 trr IFSM Typical Junction Capacitance (Note 1) Reverse 12 recovery 13time Tstg Typical Thermal Resistance (Note 2) Storage Temperature Range IO Max. 1.2 Reverse current IR – – 0.1 µA VR=80V FM140-MH FM180-MH FM1150-MH FM1200-MH FM120-MH CapacitanceFM130-MH between terminals CT FM150-MH – FM160-MH 0.72 3.0 pF FM1100-MH VR=0.5V , f=1MHz 14 40 IO Maximum RMS Voltage V Typ. – 80 SYMBOL Peak forward current Marking Code ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Min. Forward voltage VF – Unit trr IR 0.50 1.2 IF=100mA 0.85 V 0.70 0.5 0.9 V VR=80V 0.1 μA 3.0 pF VR=0.5V,f=1MHZ 4 ns VR=6V,IF=10mA,RL=100Ω 10 0.92 m WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1SS400CST5 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ELECTRICAL CHARACTERISTIC SOD-123+ CURVES PACKAGE (Ta = 25°C) Package outline Features 1 Pb Free Product 1m • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H 0.1m 100m optimize board space. REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) • Low profile surface mounted application in order to • Low power loss, high efficiency. • High current capability, low forward voltage drop. 10m surge capability. • High • Guardring for overvoltage protection. • Ultra high-speed switching. 1m epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 RoHS 100µ product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 10µ 0.012(0.3) Typ. 1µ 0.071(1.8) 0.056(1.4) 100n 10n Mechanical data CAPACITANCE BETWEEN TERMINALS : CT (pF) 0 0.5 RATINGS VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 20 30 0.1 Maximum DC Blocking Voltage 0 2 4 6 8 VDC 12 10 14 100 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) RΘJA Junction50Capacitance CJ (Note 1) SURGE CURRENT : Isurge (A) Storage Temperature Range 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V 28 35 42 56 70 105 140 V 200 V 0 20 100 30 60 10 80 150 FORWARD CURRENT : I F (mA) 1.0 Reverse recovery time characteristics 30 0 50 -55 to +125 A A 40 120 TJ Operating Temperature Range ℃ -55 to +150 0.01µF - 65 to D.U.T. +175 TSTG 20 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 5kΩ FM180-MH FM1100-MH FM1150-MH FM1200-MH U 10 VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ PULSE 0.50 GENERATOR0.70 OUTPUT 50Ω IR @T A=125℃ 5 Rated DC Blocking Voltage 1 1 10 100 1000 50Ω 0.9 0.85 SAMPLING OSCILLOSCOPE 0.92 V m Fig.6 Reverse recovery time (trr) measurement circuit 2- Thermal Resistance From Junction to Ambient 0.1 0.5 10 2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1 Fig.4 Fig.3 Capacitance between Peak Forward Surge Current 8.3 ms single half sine-wave terminals IFSM NOTES: 2 40 Maximum Average Forward Rectified VOLTAGE Current REVERSE : VR (V) IO 0.031(0.8) Typ. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 0.2 Maximum Recurrent Peak Reverse Voltage REVERSE VOLTAGE : VR (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ 1 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Typical 0.024(0.6) 100 120 80 Dimensions in inches and (millimeters) Marking Code 60 3 REVERSE RECOVERY TIME : trr (ns) 40 Fig.2 Reverse characteristics • Polarity : Indicated by cathode band 5 Position : Any • Mounting • Weight : Approximated 0.011 gram 2 20 0.031(0.8) Typ. Method 2026 10 0.040(1.0) 1n 10µ rated flame retardant • Epoxy0 : UL94-V0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 plastic, SOD-123H • Case : Molded FORWARD VOLTAGE : VF (V) , Forward characteristics • TerminalsFig.1 :Plated terminals, solderable per MIL-STD-750 10,000 PULSE WIDTH : TW (ms) Fig.5 Surge current characteristics 2016-03 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP WILLAS FM120-M+ 1SS400CST5 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers Ordering Information: thermal resistance. better reverse leakage current and mounted application in order to • Low profile surface Device PN optimize board space. (1) Pb Free Product SOD-123H Packing 0.146(3.7) Tape&Reel: 8 Kpcs/Reel 0.130(3.3) 1SS400CST5 efficiency. G ‐WS loss, high • Low power High current capability, low forward voltage drop. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. ***Disclaimer*** Method 2026 Dimensions in inches and (millimeters) WILLAS reserves the right to make changes without notice to any product • Polarity : Indicated by cathode band Mounting Position : Any • specification herein, to make corrections, modifications, enhancements or other • Weight : Approximated 0.011 gram changes. WILLAS or anyone on its behalf assumes no responsibility or liability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS for any errors or inaccuracies. Data sheet specifications and its information Ratings at 25℃ ambient temperature unless otherwise specified. contained are intended to provide a product description only. "Typical" parameters Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% which may be included on WILLAS data sheets and/ or specifications can For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS and do vary in different applications and actual performance may vary over time. Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum WILLAS does not assume any liability arising out of the application or Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum use of any product or circuit. RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Am Maximum Average Forward Rectified Current IO 1.0 WILLAS products are not designed, intended or authorized for use in medical, Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am life‐saving implant or other applications intended for life‐sustaining or other related superimposed on rated load (JEDEC method) ℃/ 40 Typical Thermal Resistance (Note 2) RΘJA applications where a failure or malfunction of component or circuitry may directly P 120 Typical Junction Capacitance (Note 1) CJ or indirectly cause injury or threaten a life without expressed written approval -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximum Inc and its subsidiaries harmless against all claims, damages and expenditures Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 . 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.5 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2016-03 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.