WILLAS MMBT3904DW1T1

WILLAS
FM120-M+
MMBT3904DW1T1
THRU
Transistor
Dual
General
1.0A SURFACE
MOUNTPurpose
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
The
MMBT3904DW1T1
device is a spin–off of our popular
power loss, high efficiency.
• Low
SOT–23/SOT–323
three–leaded
device.voltage
It is designed
for general
low forward
drop.
• High current capability,
purpose
applications and is housed in the SOT–363
surge capability.
• Highamplifier
six–leaded
surface
package.
By putting two discrete devices in
for mount
overvoltage
protection.
• Guardring
Ultra high-speed
switching.
one •package,
this device
is ideal for low–power surface mount
epitaxial
planar
chip,
silicon junction.
• Silicon where
applications
board
space
is metal
at a premium.
Lead-free
parts
meet
environmental
standards of
•
, 100–300
• hFEMIL-STD-19500
/228
• Low
VCE(sat)
, ≤for0.4
V code suffix "G"
product
packing
• RoHS
Halogen Circuit
free product
for packing code suffix "H"
Design
• Simplifies
Mechanical
data
• Reduces Board Space
: UL94-V0 rated
flame retardant
• EpoxyComponent
Count
• Reduces
Case
:
Molded
plastic,
SOD-123H
•
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
,
• Terminals
:Plated
terminals, solderable
per MIL-STD-750
Marking:
MMBT3904DW1T1
= MA
• Device
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5
4
0.071(1.8)
0.056(1.4)
1
2
3
SOT-363
(3)
(2)
(1)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Q1
0.031(0.8) Typ.
Q2
Method 2026
• Weight :0.005g
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Featrues
• Mounting Position : Any
(4)
(5)
(6)
z RoHS
product
for packing code
• Weight
: Approximated
0.011suffix
gram "G",
Halogen free product for packing code suffix "H".
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Ratings
at 25℃RATINGS
ambient temperature unless otherwise specified.
Single phase
half
Symbol load. Value
Ratingwave, 60Hz, resistive of inductive
For capacitive load, derate current by 20%
Collector–Emitter Voltage
VCEO
40
RATINGS
Collector–Base Voltage
VCBO
Marking Code
Emitter–Base
Voltage
Maximum
Recurrent
Peak Reverse Voltage
Collector
Current
– Continuous
Maximum
RMS
Voltage
VEBO
IC
Maximum
DC Blocking
Voltage
Electrostatic
Discharge
ESD
Maximum Average Forward Rectified Current
THERMAL CHARACTERISTICS
Peak Forward Surge Current 8.3 ms single half sine-wave
Characteristic
superimposed on
rated load (JEDEC method)
Symbol
(1) 2)
Typical
Resistance
(Note
TotalThermal
Package
Dissipation
T
=
25°C
Typical A
Junction Capacitance (Note 1)
PD
Operating
Temperature
Thermal
ResistanceRange
Junction to
RJA
Storage
Temperature Range
Ambient
Junction and Storage
Temperature CHARACTERISTICS
Range
TJ, Tstg
Marking
Device
Vdc
Shipping
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
60
VRRM
12
6.0 20
VRMS 200 14
20
VDC
HBM>16000,
MM>2000
IO
IFSM
Vdc
13
Vdc
30
MA
3000 Units/Reel
10
115
120
100
150
200
18
80
28
35
42
56
70
105
140
40
50
60
80
100
150
200
RΘJA 150
CJ
mW
1.0
30
40
120
833
-55 to +125
°C/W
–55 to +150
°C
TSTG
MMBT3904DW1T1
15
16
50
60
30
V
Unit
TJ
14
40
mAdc
21
Max
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
1. Device
mounted
on FR4
glassatepoxy
printed circuit board using the minimum
Maximum
Average
Reverse
Current
@T A=25℃
IR
1. recommended footprint.
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
ORDERING INFORMATION
Unit
@T A=125℃
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3904DW1T1
THRU
Transistor
Dual
General
1.0A SURFACE
MOUNT Purpose
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
ELECTRICAL
CHARACTERISTICS
(TA = 25°C unless otherwise noted)
optimize
board space.
• Low power loss, high efficiency.
Characteristic
• High current capability, low forward voltage drop.
OFF CHARACTERISTICS
• High surge capability.
(2)
Collector–Emitter
Voltageprotection.
for overvoltage
• GuardringBreakdown
(IC =• 1.0
mAdc,
IB = 0) switching.
Ultra
high-speed
epitaxial planar
chip, metal silicon junction.
• Silicon Breakdown
Collector–Base
Voltage
Lead-free
(IC =• 10
Adc, IE parts
= 0) meet environmental standards of
0.146(3.7)
Symbol
Min
Max
0.130(3.3)
V(BR)CEO
V(BR)CBO
MIL-STD-19500 /228
Emitter–Base
product for Voltage
packing code suffix "G"
• RoHSBreakdown
(IE = 10
Adc, Ifree
0)
C = product
Halogen
for packing code suffix "H"
V(BR)EBO
Mechanical
data
Base Cutoff
Current
(VCE• =
30
Vdc,
V
=
3.0
Vdc)flame retardant
EB
Epoxy : UL94-V0
rated
IBL
Collector
Cutoff: Molded
Current plastic, SOD-123H
• Case
(VCE = 30 Vdc, VEB = 3.0 Vdc)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
ICEX
0.031(0.8) Typ.
40
–
60
–
6.0
–
–
50
–
50
Unit
0.012(0.3) Typ.
Vdc
0.071(1.8)
0.056(1.4)
Vdc
Vdc
nAdc
0.040(1.0)
0.024(0.6)
nAdc
0.031(0.8) Typ.
ON CHARACTERISTICS
Method(2)
2026
DC Current
Gain : Indicated by cathode band
• Polarity
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
Mounting Position : Any
•
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC =• 10
mAdc,: Approximated
VCE = 1.0 Vdc) 0.011 gram
Weight
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc,
VCE = 1.0 RATINGS
Vdc)
MAXIMUM
AND
ELECTRICAL
Collector–Emitter
Saturation
Voltage unless otherwise specified.
VCE(sat)
Vdc
Ratings
at 25℃ ambient
temperature
(IC =phase
10 mAdc,
IB = 1.0
mAdc)
–
0.2
Single
half wave,
60Hz,
resistive of inductive load.
(IC = 50 mAdc, IB = 5.0 mAdc)
–
0.3
For capacitive
load, derate current by 20%
Base–Emitter Saturation Voltage
VBE(sat)
Vdc
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
RATINGS
(IC = 10 mAdc, IB = 1.0 mAdc)
0.65
0.85
Marking
12
13
14
15
16 –
18 0.95 10
115
120
(IC =Code
50 mAdc, IB = 5.0 mAdc)
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
SMALL–SIGNAL CHARACTERISTICS
Maximum RMS Voltage
Current–Gain
– Bandwidth
Maximum
DC Blocking
VoltageProduct
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
VRMS
14
21
28
VDC
20
30
40
IO
Maximum Average Forward Rectified Current
hFE
Dimensions in inches and (millimeters) –
40
–
70
–
100
300
60
–
30
–
CHARACTERISTICS
Output Capacitance
Vdc,Current
IE = 0,8.3f =ms1.0
MHz)
Peak(VForward
Surge
single
half sine-wave
CB = 5.0
superimposed on rated load (JEDEC method)
Input Capacitance
Typical
Thermal
Resistance
2) MHz)
(VEB
= 0.5 Vdc,
IC = 0,(Note
f = 1.0
Capacitance
1) Duty Cycle ≤2.0%.CJ
2.Typical
PulseJunction
Test: Pulse
Width ≤ (Note
300 µs;
Operating Temperature Range
TJ
Storage Temperature Range
42
60
Cobo
IFSM
RΘJA
35
50fT
Cibo
300
1.0
–
30
70
80
40–
120
-55 to +125
56
–
100
105
MHz150
4.0
8.0
140
200
pF
pF
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3904DW1T1
THRU
Transistor
Dual
General
1.0A SURFACE
MOUNTPurpose
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
25°C unless
otherwise noted) (Continued)
ELECTRICAL
CHARACTERISTICS
better reverse
leakage current(T
and
resistance.
A =thermal
application in order to
• Low profile surface mounted
Characteristic
Symbol
optimize board space.
Input Impedance
• Low power loss, high efficiency.
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
• High current capability, low forward voltage drop.
• High surge capability.
Voltage
Feedback Ratio
for overvoltage protection.
• Guardring
(VCE
= 10 Vdc,
IC = 1.0 switching.
mAdc, f = 1.0 kHz)
high-speed
• Ultra
• Silicon epitaxial planar chip, metal silicon junction.
parts
meet environmental standards of
• Lead-free
Small–Signal
Current
Gain
(VCE MIL-STD-19500
= 10 Vdc, IC = 1.0/228
mAdc, f = 1.0 kHz)
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Output Admittance
Mechanical
(VCE = 10 Vdc, IC = 1.0 data
mAdc, f = 1.0 kHz)
• Epoxy : UL94-V0 rated flame retardant
SOD-123H
Min
Max
hie
0.146(3.7)
0.130(3.3)
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
–
–
5.0
4.0
hre
hfe
hoe
Noise •Figure
Case : Molded plastic, SOD-123H
,
(VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz)
• Terminals :Plated terminals, solderable per MIL-STD-750
NF
0.031(0.8) Typ.
Method 2026
SWITCHING CHARACTERISTICS
• Polarity : Indicated by cathode band
Delay Time
(VCC = 3.0 Vdc, VBE = –0.5 Vdc)
: Any
• Mounting Position
Rise Time
(I
=
10 mAdc,
C
B1 = 1.0 mAdc)
• Weight : Approximated
0.011 Igram
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
Fall Time
B1 B2
Ratings at 25℃ ambient temperature unless otherwise specified.
X 10–4
0.071(1.8)
0.056(1.4)
–
mhos
0.040(1.0)
0.024(0.6)
dB
0.031(0.8) Typ.
td
–
35
tr
–
35
ts
–
200
tf
–
50
ns
ns
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
DUTY CYCLE
Marking
Code = 2%
RATINGS
300 ns
Maximum Recurrent Peak +10.9
Reverse
V Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
-0.5 V
10 k
FM1150-MH FM1200-M
+3 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
+3 V
t1
1012< t1 < 50013
s
14
15
16
18
10
115
120
+10.9 V
DUTY
20 CYCLE
30= 2% 40
50
60
80
100 275 150
200
V275
RRM
14
21
28
35
42
56
70
105
140
VRMS
10 k
20
30
40
50
60
80
100
150
200
VDC
0
Maximum Average Forward Rectified Current
< 1 ns
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IOC < 4 pF*
s
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Figure 1. Delay and Rise Time
Storage Temperature Range
Equivalent Test Circuit
CHARACTERISTICS
TJ
1.0
1N916
30
< 1 ns
-55 to +125
TSTG
40
120
Cs < 4 pF*
-55 to +150
Figure 2. Storage
and Fall Time
- 65 to +175
Equivalent Test Circuit
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-9.1 V′
J
* TotalCshunt
capacitance of test jig and connectors
Typical Junction Capacitance (Note 1)
kΩ
0.012(0.3) Typ.
Dimensions in inches and (millimeters)
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
(I = I = 1.0 mAdc)
Unit
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3904DW1T1
THRU
Transistor
Dual
General
Purpose
1.0A SURFACE
MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
TYPICAL TRANSIENT CHARACTERISTICS
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance. T = 25°C
J
TJ = 125°C
optimize board space.
5000
• Low power loss, high efficiency.
VCC = 40 V
• High current capability, low forward voltage drop.
3000
IC/IB = 10
• High surge capability.
2000
• Guardring for overvoltage protection.
• Ultra high-speed switching.
1000
• Silicon epitaxial planar chip, metal silicon junction.
700
Cibo
standards of
• Lead-free parts meet environmental
500
MIL-STD-19500 /228
300
• RoHS product for packing code suffix "G"
200
obo
Halogen free product for C
packing
code suffix "H"
SOD-123H
• Low profile surface mounted application in order to
CAPACITANCE (pF)
7.0
5.0
3.0
2.0
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
1.0 • Case : Molded plastic, SOD-123H
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
,
• Terminals :Plated terminals, solderable per MIL-STD-750
100
70
50
300
200
MAXIMUM RATINGS AND ELECTRICAL
RATINGS
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
2.0 3.0
1.0
40 V 12
20
VRRM
15 V
14
VRMS
2.0
V
20
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum
10 RMS Voltage
td @ VOB = 0 V
5 Average Forward Rectified Current
Maximum
1.0
2.0 3.0 5.0 7.0 10
20 30
50 70IO100
IC, COLLECTOR
(mA)
Peak Forward Surge Current
8.3 ms singleCURRENT
half sine-wave
IFSM
superimposed on rated load
(JEDEC
Figure
5.method)
Turn–On
Time
Typical Thermal Resistance (Note 2)
Operating Temperature Range
300
200
Storage Temperature
IC/IB = 20 Range
IC/IB = 10
t s′ , STORAGE TIME (ns)
200
CHARACTERISTICS
VF
Maximum
50 Average Reverse Current at @T A=25℃ IC/IB = 20
Rated DC Blocking Voltage
30
20
NOTES:
IR
IC/IB = 10
@T A=125℃
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
15
50
16
60
18
80
10
100
115
150
120
200
21
10
307
5
28
35
42
56
70
105
140
40
50
60
80
100
150
200
1.0
2.0 3.0 5.0 7.0 10 1.0 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
30
200
Figure 6. Rise Time
40
120
500
-55 to +125
300
200
-55 toV+150
CC = 40 V
IB1 = IB2
- 65 to +175
IC/IB = 20
100
0.50
70
50
20
30
50 70 100
200
0.70
IC/IB = 10
1.0
0.85
0.9
0.92
0.5
30
20
7
5
2012-06
2012-0
30
13
20
30
10
5.0 7.0 10
VCC = 40 V
IC/IB = 10
50
7
5
2.0 3.0
200
100
70
10
2- Thermal Resistance From Junction to Ambient
1.0
50 70 100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
100
Maximum Forward Voltage at 1.0A DC
70
0.031(0.8) Typ.
30
IC, COLLECTOR CURRENT (mA)
RΘJA
CJ
t′sT=Jts - 1/8 tf
IB1
= IB2
TSTG
Typical
500 Junction Capacitance (Note 1)
20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum
7 DC Blocking Voltage
5.0 7.0 10
300
200
CHARACTERISTICS
t f , FALL TIME (ns)
30
20
QT
500
IC/IB = 10
Ratings at 25℃ ambient temperature unless otherwise specified.
100
Single phase half wave, 60Hz, resistive of inductive load.
tr @ VCC = 3.0 V
70
For capacitive load, derate current by 20%
50
TIME (ns)
0.071(1.8)
0.056(1.4)
Dimensions
in inches and
(millimeters)
Figure
4. Charge
Data
t r, RISE TIME (ns)
Figureby
3. cathode
Capacitance
• Polarity : Indicated
band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.012(0.3) Typ.
QA
REVERSE BIAS VOLTAGE (VOLTS)
Method 2026
500
0.146(3.7)
0.130(3.3)
Q, CHARGE (pC)
10
2.0 3.0
5.0 7.0 10
10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
200
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3904DW1T1
THRU
Transistor
Dual
General
1.0A SURFACE
MOUNTPurpose
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Features
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
Package outline
NOISE FIGURE VARIATIONS
power dissipation offers
• Batch process design, excellent
(V
= 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
A
better reverse leakage current CE
and thermal resistance.
12
8
6
4
2
0
0.1
SOURCE RESISTANCE = 200 optimize board space.
= 1.0 mA
loss, high efficiency.
• LowIC power
• High current capability, low forward voltage drop.
RESISTANCE = 200 capability.
• High surgeSOURCE
IC = 0.5 mA
• Guardring for overvoltage protection.
• Ultra high-speed switching.
SOURCE RESISTANCE = 1.0 k
chip,
• Silicon epitaxial planar
IC = 50
A metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
SOURCE
RESISTANCE
= 500
Halogen
free product
forpacking code suffix "H"
IMechanical
C = 100 A
data
f = 1.0 kHz
12
NF, NOISE FIGURE (dB)
10
NF, NOISE FIGURE (dB)
14
• Low profile surface mounted application in order to
IC = 1.0 mA
0.146(3.7)
0.130(3.3)
IC = 0.5 mA
10
0.012(0.3) Typ.
IC = 50 A
8
0.071(1.8)
0.056(1.4)
IC = 100 A
6
4
2
40
100
: UL94-V0
retardant
• Epoxy
0.2
0.4
1.0 rated
2.0 flame
4.0
10
20
FREQUENCY
(kHz)
SOD-123H
• Case : Moldedf,plastic,
,
• Terminals :Plated
solderable per MIL-STD-750
Figure terminals,
9. Noise Figure
0
0.1
0.2
0.4
1.0
2.0
10
4.0
0.040(1.0)
0.024(0.6)100
40
20
RS, SOURCE RESISTANCE (k OHMS)
0.031(0.8) Typ.
0.031(0.8) Typ.
Figure 10. Noise Figure
Method 2026
• Polarity : Indicated by cathode band
h PARAMETERS
• Mounting Position : Any
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
• Weight : Approximated 0.011 gram
300
SOD-123H
Dimensions in inches and (millimeters)
hoe, OUTPUT ADMITTANCE ( mhos)
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
100
Maximum
Recurrent Peak Reverse Voltage
70
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
5.0
IFSM
50
30
0.1
0.2 Current
0.3
0.5
1.0 half sine-wave
2.0 3.0
Peak Forward
Surge
8.3 ms single
I
,
COLLECTOR
CURRENT
(mA)
C (JEDEC method)
superimposed on rated load
Typical Thermal Resistance
(Note
Figure
11.2)Current Gain
CJ
Operating Temperature Range
TJ
h ie , INPUT IMPEDANCE (k OHMS)
Storage
10 Temperature Range
Rated DC Blocking Voltage
IR
@T A=125℃
1.0
NOTES:
0.5
2- Thermal Resistance From Junction to Ambient
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
2012-06
2012-0
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
302
40
50
60
80
100
150
200
0.1
0.2
1.0
0.3
0.5
1.0
2.0 3.0
30
IC, COLLECTOR CURRENT (mA)
5.0
10
40 Admittance
Figure 12. Output
120
-55 10
to +125
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
15
50
-55 to +150
- 65 to +175
7.0
5.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
2.0
14
40
VF
Maximum Forward Voltage at 1.0A DC
13
305
TSTG
CHARACTERISTICS
5.0
20
1
10
RΘJA
Typical Junction Capacitance (Note 1)
20
50
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
10
Marking Code
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
h fe , CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
200 phase half wave, 60Hz, resistive of inductive load.
Single
For capacitive load, derate current by 20%
5.0
10
3.0 0.50
0.70
0.9
0.85
0.5
2.0
0.92
10
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 14. Voltage Feedback Ratio
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3904DW1T1
THRU
Transistor
Dual
General
1.0A SURFACE
MOUNTPurpose
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL
STATIC offers
CHARACTERISTICS
power dissipation
• Batch process design, excellent
better reverse leakage current and thermal resistance.
2.0
SOD-123H
• Low profile surface mounted application in order to
TJ = +125°C
optimize board space.
0.3
• Low power loss, high efficiency.
+25°C
drop.
• High current capability, low forward voltage
• High surge capability.
• Guardring for overvoltage protection. -55°C
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.2
• RoHS product for packing code suffix "G"
1.0
0.7
0.5
VCE = 1.0 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
0.1
0.1
Mechanical data
rated
• Epoxy0.2: UL94-V0
0.3
0.5 flame
0.7 retardant
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderableFigure
per MIL-STD-750
15. DC Current Gain
20
30
70
50
0.040(1.0)
0.024(0.6)
100
200
0.031(0.8) Typ.
0.031(0.8) Typ.
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Method 2026
1.0
0.8
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
IC = 1.0 mA
TJ = 25°C
10 mA
30 mA
100 mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.6
Ratings
at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For
0.4 capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking
Code
0.2
12
20
13
30
14
40
15
50
14
21
28
35
42
56
0.7
200.3
300.5
40 1.0 50
VDC
Maximum Average Forward Rectified Current
IO IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
2.0
60
3.0 80
VRRM
Maximum Recurrent Peak Reverse Voltage
VRMS
Maximum RMS Voltage
0
0.01 DC Blocking
0.02 Voltage
0.03
Maximum
Dimensions in inches and (millimeters)
0.05
0.07
0.1
16
60
0.2
TJ
VBE(sat) @ IC/IBTSTG
=10
CHARACTERISTICS
0.8
Maximum
Average Reverse Current at @T A=25℃
0.6
IR
@T A=125℃
Rated DC Blocking Voltage
0.4
NOTES:
VCE(sat) @ IC/IB =10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0
1.0
2.0
2012-06
2012-0
5.0
10
20
140
200
-55 to +150
- 65 to +175 +25°C TO +125°C
VC FOR VCE(sat)
50
100
0.50
200
-55°C TO +25°C
0.85
0.70
0.9
0.5
-0.5
0.92
10
-55°C TO +25°C
-1.0
+25°C TO +125°C
VB FOR VBE(sat)
-1.5
0.2
105
10 150
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
0
F
VBE @ VCEV=1.0
V
Maximum Forward Voltage at 1.0A DC
120
200
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
Storage
Temperature Range
1.0
70
5.0 100
7.0
115
150
40
120
1.0 -55 to +125
CJ
TJ =Temperature
25°C
Operating
Range
RΘJA
Typical
Junction Capacitance (Note 1)
1.2
10
100
1.0
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
18
80
-2.0
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
180 200
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3904DW1T1
THRU
Transistor
Dual
General
1.0A SURFACE
MOUNTPurpose
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SOT-363
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection. .087(2.20)
• Ultra high-speed switching.
.071(1.80)
junction.
• Silicon epitaxial planar chip, metal silicon
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
.004(0.10)MIN.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.030(0.75)
.021(0.55)
.071(1.80)
Halogen free product for packing code suffix "H"
Mechanical data
.096(2.45)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any .056(1.40)
• Weight : Approximated 0.011 gram
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
.016(0.40)
VRMS
.004(0.10)
VDC
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
12
20
14
20
13
30
14
40
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
15
50
Typical Junction Capacitance (Note 1)
Storage Temperature Range
10
100
115
150
120
200
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
IO
IFSM
TJ
Operating Temperature Range
18
80
21
1.0
30
RΘJA
Dimensions
in inches and (millimeters)
CJ
Typical Thermal Resistance (Note 2)
16
60
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.5 mm (min)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
0.50
0.70
0.85
0.9
0.5
IR
0.92
10
0.65 mm 0.65 mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.4 mm (min)
2012-06
2012-0
1.9 mm
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.