WILLAS FM120-M DTC113ZUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. surge capability. • High package is available • Pb-Free • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” • Ultra high-speed switching. epitaxialfor planar chip, code metal suffix silicon “H” junction. • Silicon Halogen free product packing x Epitaxial Planar Die Construction parts meet environmental standards of • Lead-free MIL-STD-19500 /228 Available NPN Types x Complementary RoHS product for packing code suffix "G" Resistors x Built-In•Biasing Halogen for packing code suffix "H" • Epoxy meets ULfree 94product V-0 flammability rating Mechanical data • Moisure Sensitivity Level 1 x Marking: E21 : UL94-V0 rated flame retardant • Epoxy 0.146(3.7) 0.130(3.3) SOT-323 0.012(0.3) Typ. .004(0.10)MIN. Features .096(2.45) .078(2.00) 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .010(0.25) .003(0.08) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Absolute maximum ratings @ 25к Parameter • Polarity : Indicated by cathode band Collector current Mounting Position : Any •Input voltage dissipation •Power Weight : Approximated 0.011 gram Junction temperature Storage temperature MAXIMUM RATINGS Min Typ Max Unit Dimensions in inches.087(2.20) and (millimeters) --100 --mA .070(1.80) -5 --+10 V --200 --mW --150 --ć -55 --150 ć AND ELECTRICAL CHARACTERISTICS .054(1.35) .045(1.15) Symbol IC VIN Pd Tj Tstg Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .056(1.40) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Symbol Parameter Min Typ Recurrent Peak Reverse Voltage VMaximum 0.3VRRM --I(off) Input voltage (VCC =5V, IO=100A) ---VRMS --VMaximum I(on) RMS Voltage (VO=0.3V, IO=20mA) VO(on) Output voltage (IO=10mA,Ii=0.5mA) ----Maximum DC Blocking Voltage II Input current (VI=5V) --- VDC --IO(off) current (VCCRectified =50V, VCurrent --- IO --MaximumOutput Average Forward I=0) G DC current gain (VO=5V, IO=5mA) 33 --I Peak Forward Current 8.3 ms single half sine-wave0.7 R InputSurge resistance 1 IFSM 1.0 R2superimposed /R1 Resistance 8 10 on rated ratio load (JEDEC method) Transition frequency Typical Thermal Resistance (Note 2) --- RΘJA250 fT (VO =10V, IO=5mA, f=100MHz) Typical Junction Capacitance (Note 1) CJ TJ Operating Temperature Range Storage Temperature Range 12Max 20 --14 3.0 0.3 20 7.2 0.5 --1.3 12 --- 13Unit 30 V 21 V V 30mA A K¡ MHz -55 to +125 14 40 15 50 .047(1.20) 16 18 60 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 .004(0.10)MAX. 1.0 30 80 100 150 200 .043(1.10) .032(0.80) RATINGS Electrical Characteristics @ 25к .016(0.40) 40 .008(0.20) 120 in inches and -55(millimeters) to +150 Dimensions - 65 to +175 TSTG Suggested Solder CHARACTERISTICS FM180-MH FM1100-MH FM1150-MH FM1200-M Pad Layout SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 0.70 0.9 0.85 0.70 0.5 IR 0.90 0.92 10 NOTES: 1.90 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. mm 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-0 2012-06 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M DTC113ZUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Typical Characteristics Features excellent power dissipation offers • Batch process ONdesign, Characteristics OFF Characteristics SOD-123H 100 VCC=5V Ta=100℃ 0.146(3.7) 0.130(3.3) 25℃ 0.012(0.3) Typ. (mA) 10 IO better reverse leakage current and thermal resistance. VO=0.3V • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Ta=25℃ protection. • Guardring for overvoltage 100℃ • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" OUTPUT CURRENT 1000 INPUT VOLTAGE VI(ON) (mV) 5000 0.071(1.8) 0.056(1.4) 1 0.1 Mechanical data 100 0.1 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 0.01 • Case : Molded 0 1 plastic, SOD-123H 10 100 , I solderable (mA) • TerminalsOUTPUT :PlatedCURRENT terminals, per MIL-STD-750 0.031(0.8)500 Typ. 1000 INPUT VOLTAGE O VI(OFF) 1500 0.031(0.8) Typ. (mV) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO : Any • Mounting Position • Weight : Approximated 0.011 gram 1000 Dimensions in inches and (millimeters) GI 1000 —— IO IO/II=20 VO=5V Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 10 Forward Surge Current 8.3 ms single half sine-wave Peak 3 10 superimposed on ratedOUTPUT load (JEDEC method) CURRENT IO (mA) 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1 0.1 0.3 3 1 1.0 30 10 IO PD 400 30 100 (mA) 40 120 -55 to +125 TSTG —— Ta - 65 to +175 -55 to +150 f=1MHz Ta=25℃ 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH VF (pF) Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ CO 15 50 TJ VR CHARACTERISTICS OUTPUT CAPACITANCE 14 40 CJ @T A=125℃ 0.50 IR 300 250 POWER DISSIPATION NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 13 OUTPUT CURRENT Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage GI IFSM100 RΘJA Typical Thermal Resistance (Note 2) 30 10 3 IO Maximum Average Forward Rectified Current 4 100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M 30 SYMBOL FM120-MH FM130-MH Marking Code Operating Temperature Range CO —— 6 Storage Temperature Range 25℃ DC CURRENT GAIN RATINGS 100 Ta=100℃ (mW) OUTPUT VOLTAGE Ratings at 25℃ ambient temperature unless otherwise specified. Ta=100℃ Single phase half wave, 60Hz, resistive of inductive load. 25℃ current by 20% For capacitive load, derate PD VO(ON) (mV) 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2- Thermal Resistance From Junction to Ambient 2 0.70 0.9 0.85 0.5 0.92 10 DTC113ZUA 200 150 100 50 0 0 0 2012-0 2012-06 4 8 12 REVERSE BIAS VOLTAGE 16 VR (V) 20 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC113ZUA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produ SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) loss, high efficiency. • Low powerDevice PN Packing 0.130(3.3) • High current capability, (1) low (2) forward voltage drop. DTC113ZUA –T G ‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability. Note: (1) Packing code, Tape & Reel Packing for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20% For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical RΘJA Thermal Resistance (Note 2) 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.