WILLAS FM120-M+ DTC144ECATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers Features better reverse leakage current and thermal resistance. • • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H Absolute maximum ratings @ 25к , • Terminals :Plated terminals, solderable per MIL-STD-750 Symbol VCC VIN IO Pd Tj Tstg • • • Parameter Method 2026 Supply voltage Input voltage Polarity : Indicated by cathode band Output current Mounting Position : Any Power dissipation Junction: Approximated temperature Weight 0.011 gram Storage temperature Min ---10 -------55 Typ 50 ----200 150 --- Unit V V mA mW ć ć 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .080(2.04) .070(1.78) 0.031(0.8) Typ. Max --40 100 ----150 .122(3.10) .106(2.70) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .110(2.80) • 0.146(3.7) 0.130(3.3) .006(0.15)MIN. • • • .063(1.60) .047(1.20) • SOT-23 SOD-123H Pb-Free package is available • Low profile surface mounted application in order to RoHS optimize product board for packing space. code suffix ”G” Low power loss, efficiency.code suffix “H” • Halogen free producthigh for packing current capability, low forwardrating voltage drop. Epoxy• High meets UL 94 V-0 flammability surge capability. • High Moisure Sensitivity Level 1 for overvoltage protection. • Guardring Built-in bias resistors enable the configuration of an inverter circuit Ultra high-speed switching. • without connecting external input resistors epitaxial planar metalresistors silicon junction. • Silicon The bias resistors consist ofchip, thin-film with complete meet environmental of also have the • Lead-free isolation to allowparts negative biasing of thestandards input. They MIL-STD-19500 /228 advantage of almost completely eliminating parasitic effects. • RoHS product for packing code suffix "G" Only the on/off conditions need to be set for operation, making Halogen free product for packing code suffix "H" device design easy Mechanical data .083(2.10) Features MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .055(1.40) .035(0.89) .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. .003(0.08) Single phase half wave, 60Hz, resistive of inductive load. Electrical Characteristics @ 25к For capacitive load, derate current by 20% Symbol Parameter Min Typ Max Unit SYMBOL FM120-MH ---FM130-MH --V FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VI(off) 0.5 Input voltageRATINGS (VCC=5V, IO=100A) ----- 12 3.0 13 V VI(on) Code (VO=0.3V, IO=2mA) .004(0.10)MAX. Marking 14 15 16 18 10 115 120 VO(on) Output voltage = (IO/II 10mA/0.5mA) --50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM --- 20 0.3 30 V 40 II = Input current (VI 5V) ----0.18 mA 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS A IO(off) Output current (VCC = =50V, VI 0) ----0.5 .020(0.50) Maximum DC 40 50 60 80 100 150 200 GI DCBlocking current Voltage gain (VO=5V, = IO 5mA) 68 VDC --- 20 --- 30 .012(0.30) K¡ R1 Input resistance 32.9 47 61.1 Maximum Average Forward Rectified Current IO 1.0 Resistance ratio 0.8 1.0 1.2 R2/R1 Transition frequency Peak fT Forward Surge Current 8.3 ms single half sine-wave --250 --MHz Dimensions in inches and (millimeters) FSM 30 I (VO=10V, IO=5mA, f=100MHz) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG Suggested Solder Pad Layout *Marking: 26 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 .031 .800 0.85 0.9 0.92 0.5 .035 .900 10 .079 2.000 NOTES: inches mm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .037 .950 2012-06 2012-0 .037 .950 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144ECA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features 3 1 (mA) Mechanical data 0.3 SOD-123H VCC=5V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.1 IO (V) VI(ON) 10 1 0.3 OUTPUT CURRENT better reverse leakage current and thermal resistance. V =0.3V • Low profile surface mounted application Oin order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. metal silicon junction. • Silicon epitaxial planar chip, Ta=25℃ standards of • Lead-free parts meet environmental Ta=100℃ MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 30 INPUT VOLTAGE OFF Characteristics ONdesign, Characteristics excellent power dissipation offers • Batch process 100 Ta=100℃ 0.071(1.8) 0.056(1.4) 0.03 Ta=25℃ 0.01 3E-3 • Epoxy : UL94-V0 rated flame retardant 0.1 : Molded plastic, SOD-123H 30 0.1 • Case 0.3 1 10 3 , I solderable (mA) • Terminals OUTPUT :PlatedCURRENT terminals, per MIL-STD-750 0.040(1.0) 0.024(0.6) 1E-3 0.0 0.4 0.031(0.8) Typ. O 0.8 1.2 INPUT VOLTAGE VI(OFF) 1.6 2.0 0.031(0.8) Typ. (V) Method 2026 • Polarity : Indicated by cathode band VO(ON) —— IO : Any • Mounting Position • Weight : Approximated 0.011 gram 1000 GI IO/II=20 RATINGS Marking Code VRRM 12 20 Maximum RMS Voltage VRMS 14 VDC 20 Ta=100℃ Ta=25℃ Maximum DC Blocking Voltage Peak10Forward Surge Current 8.3 ms single half sine-wave 3 superimposed on rated load (JEDEC method) OUTPUT CURRENT I O Typical Thermal Resistance (Note 2) 10 CJ Operating Temperature Range CO —— Storage Temperature Range 8 TJ VR 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 0.3 1.0 3 30 1 OUTPUT CURRENT 40 120 GI -55 to +125 PD 400 10 IO 30 (mA) 100 —— Ta - 65 to +175 -55 to +150 f=1MHz Ta=25℃ CHARACTERISTICS 350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH @T A=125℃ (mW) VF 6 Maximum Average Reverse Current at @T A=25℃ (pF) 16 60 TSTG Maximum Forward Voltage at 1.0A DC IR CO NOTES: CAPACITANCE 15 50 1 0.1 RΘJA 4 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 14 40 50 (mA) Typical Junction Capacitance (Note 1) Rated DC Blocking Voltage 13 30 10 30 IFSM PD 1 Ta=25℃ 100 3 POWER DISSIPATION 0.5 Ta=100℃ IO Maximum Average Forward Rectified Current VO=5V 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH Maximum Recurrent Peak Reverse Voltage 30 DC CURRENT GAIN (mV) VO(ON) 300 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 100 IO —— 1000 300 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS OUTPUT VOLTAGE Dimensions in inches and (millimeters) 2- Thermal Resistance From Junction to Ambient 2 0.50 300 0.70 0.9 0.85 0.92 0.5 10 250 DTC144ECA 200 150 100 50 0 0 2012-06 2012-0 5 10 REVERSE BIAS VOLTAGE 15 VR (V) 20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC144ECA THRU NPN Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1) low (2)forward voltage drop. DTC144ECA –T G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • High for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated of WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Maximum Forward Voltage at 1.0A DC 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.