DTC114EE

WILLAS
FM120-M+
DTC114EE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
surge capability.
• High
• Pb-Free
package
is available
• Guardring for overvoltage protection.
RoHS •product
for packing
code suffix ”G”
Ultra high-speed
switching.
Halogen
free product
forplanar
packing
suffix
“H”junction.
epitaxial
chip,code
metal
silicon
• Silicon
Lead-free
parts
meet
environmental
standards
of
•
x Epitaxial Planar Die Construction
MIL-STD-19500 /228
Surface Mount Package
x Untrl Small
• RoHS product for packing code suffix "G"
Resistors
x Built-In Biasing
Halogen free product for packing code suffix "H"
• EpoxyMechanical
meets UL 94 V-0data
flammability rating
• Moisure Sensitivity Level 1
• Epoxy : UL94-V0 rated flame retardant
x Marking:24
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.146(3.7)
0.130(3.3)
SOT-523
Features
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.035(0.90)
.028(0.70)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.014(0.35)
.010(0.25)
Absolute maximumMethod
ratings
@ 25к
2026
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
20
30
40
Maximum Recurrent Peak Reverse Voltage
VRRM
Symbol
Parameter
Min
Typ
Max
Unit
14
21
28
Maximum
RMS
Voltage
V
RMS
--0.5
--V
VI(off)
Input voltage (VCC=5V, IO=100­A)
--- VDC --- 20 3.0 30 V
VMaximum
DC Blocking (V
Voltage
40
I(on)
O=0.3V, IO=10mA)
VO(on)
Output voltage (IO=10mA,Ii=0.5mA)
----0.3
V
Maximum Average Forward Rectified Current
IO
II
Input current (VI=5V)
----0.88
mA
IO(off)
Output current (VCC=50V, VI=0)
----0.5
­A
Peak Forward Surge Current 8.3
ms single half sine-wave
GI
DC current gain (VO=5V, IO=5mA)
30 IFSM ----superimposed on rated load (JEDEC method)
R1
Input resistance
7
10
13
K
¡
Thermal
Resistance
RTypical
Resistance
ratio (Note 2)
0.8RΘJA 1.0
0.2
2/R1
Transition
frequency(Note 1)
Typical
Junction
Capacitance
--- CJ 250
--MHz
fT
(V2=10V, I2=5mA, f=100MHz)
-55 to +125
Operating Temperature Range
TJ
Storage Temperature Range
15
50
16
60
35
42
50
60
1.0
30
115
150
120
200
56
70
105
140
150
200
.008(0.20)
80
100
.004(0.10)
120
-55 to +150
- 65 to +175
TSTG
.014(0.35)
.006(0.15)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
10
100
.004(0.10)MAX.40
CHARACTERISTICS
18
80
.035(0.90)
.028(0.70)
Marking Code
Electrical
Characteristics @ 25к
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
.069(1.75)
.057(1.45)
.004(0.10)MIN.
.043(1.10)
Symbol • Polarity : Indicated
Parameter
Typ
Max
Unit
Dimensions in inches and (millimeters)
by cathode band Min
--V
Supply Voltage
--50
VCC
.035(0.90)
Mounting
Position : Any
•Collector
IC
current
--50
100
mA
40
V
VIN
Input
voltage
-10
--• Weight : Approximated 0.011 gram
Pd
Power dissipation
--150
--mW
Tj
Junction temperature
--150
--ć
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Tstg
Storage temperature
-55
--150
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
Dimensions10
in inches and (millimeters)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
DTC114EE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
• Batch process design, excellent power dissipation offers
100
Characteristics
better reverseON
leakage
current and thermal resistance.
OFF Characteristics
SOD-123H
10
V =0.3V
order to
• Low profile surface mounted application in
VCC=5V
O
INPUT VOLTAGE
3
1
0.3
Mechanical data
(mA)
0.146(3.7)
0.130(3.3)
25℃
3
0.012(0.3) Typ.
1
IO
VI(ON)
10
Ta=100℃
OUTPUT CURRENT
(V)
30
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
=25℃ chip, metal silicon junction.
• Silicon epitaxialTaplanar
100℃
environmental standards of
• Lead-free parts meet
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.071(1.8)
0.056(1.4)
0.3
0.1
0.03
• Epoxy : UL94-V0 rated flame retardant
0.1 • Case : Molded plastic, SOD-123H
0.1
1
10
100
3
30
0.3
,
• Terminals :Plated
terminals,I solderable
per MIL-STD-750
OUTPUT CURRENT
(mA)
0.040(1.0)
0.024(0.6)
0.01
0.0
0.031(0.8) Typ.
0.4
O
0.8
1.2
INPUT VOLTAGE
VI(OFF)
0.031(0.8) Typ.
2.0
1.6
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON)
: Any—— IO
• Mounting Position
• Weight : Approximated 0.011 gram
1
Dimensions in inches and (millimeters)
GI
1000
IO/II=20
——
IO
VO=5V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
25℃
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
0.03
Maximum
DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak
0.01Forward Surge Current 8.3 ms single half sine-wave
10
superimposed on rated load (JEDEC method)
OUTPUT CURRENT
IO
Typical Thermal Resistance (Note 2)
30
(mA)
IO
IFSM
CJ
Operating Temperature Range
Storage Temperature RangeCO
TJ
——
10
VR
(pF)
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
1
0.1
0.3
1.0
30
3
1
OUTPUT CURRENT
40
120
-55 to +125
10
IO
30
(mA)
100
-55 to +150
PD - ——
Ta
65 to +175
400
VF
@T A=125℃
CO
10
100
30
0.50
IR
6
300
250
POWER DISSIPATION
NOTES:
OUTPUT CAPACITANCE
18
80
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
350
Maximum Average Reverse Current at @T A=25℃
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
16
60
f=1MHz
Ta=25℃
CHARACTERISTICS
Rated DC Blocking Voltage
10
15
50
21
100
TSTG
Maximum
Forward Voltage at 1.0A DC
8
14
40
3
RΘJA
Typical Junction Capacitance (Note 1)
30
13
30
(mW)
3
GI
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
1
DC CURRENT GAIN
RATINGS
0.1
100
PD
OUTPUT VOLTAGE
VO(ON)
(V)
Ratings
at 25℃ ambient temperature unless otherwise specified.
0.3
Single phase half wave, 60Hz, resistive of inductive load.
Ta=100℃
For capacitive load, derate current by 20%
25℃
Ta=100℃
2- Thermal
Resistance From Junction to Ambient
4
2
0.70
0.9
0.85
0.5
0.92
10
200
DTC114EE
150
100
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
100
125
150
T (℃) ELECTRONIC COR
WILLAS
AMBIENT TEMPERATURE
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114EE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produ
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
loss, high efficiency.
• Low powerDevice PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(1) (2)
DTC114EE –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical
RΘJA
Thermal Resistance (Note 2)
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.