WILLAS FM120-M+ DTA144ECATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Features optimize board space. • Low profile surface mounted application in order to • • • • • SOT-23 • Low power loss, high efficiency. Pb-Free is available current capability, low forward voltage drop. • Highpackage surgefor capability. • High RoHS product packing code suffix ”G” Guardring for overvoltage protection. • Halogen free product for packing code suffix “H” high-speed switching. • Ultra Epoxy meets UL 94 V-0 flammability rating • Silicon epitaxial planar chip, metal silicon junction. Moisure Sensitivity Level 1 parts meet environmental standards of • Lead-free Built-in bias resistors enable the configuration of an inverter circuit 0.146(3.7) 0.130(3.3) .122(3.10) .106(2.70) .063(1.60) .047(1.20) • MIL-STD-19500 /228 without connecting external resistors product for packing input code suffix "G" • RoHS The bias resistors consist of thin-film Halogen free product for packing coderesistors suffix "H" with complete isolation to allow negative biasing of the input. They also have the Mechanical data advantage of almost completely eliminating parasitic effects. Epoxy : UL94-V0 rated flame retardant Only •the on/off conditions need to be set for operation, making : Molded • Case device design easy plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .080(2.04) .070(1.78) Method 2026 Absolute maximum ratings @ 25к SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Min -0.5 VRRM --VRMS ----VDC --IO 68 32.9 IFSM 0.8 --250 RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range Typ 12 --20 ----- 14 --- 20 ----47 1.0 Max 13 --30 -3.0 -0.3 21 -0.18 30 -0.5 --61.1 1.2 --- Unit V V V mA A K¡ MHz 14 40 15 50 16 60 28 35 42 40 50 60 56 70 105 140 80 100 150 200 40 .020(0.50) .012(0.30) 120 -55 to +150 Dimensions in inches and (millimeters) - 65 to +175 -55 to +125 Suggested Solder SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH PadFM180-MH LayoutFM1100-MH FM1150-MH FM1200-MH VF *Marking: 16 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 0.50 0.70 IR .031 .800 0.5 0.85 0.9 0.92 10 .035 .900 NOTES: .079 2.000 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 120 200 TSTG CHARACTERISTICS Rated DC Blocking Voltage 115 150 .004(0.10)MAX.1.0 30 Maximum Forward Voltage at 1.0A DC 18 .008(0.20) 10 80 .003(0.08) 100 .055(1.40) .035(0.89) Symbol Parameter Marking Code VI(off) Input voltage (VCC=-5V, IO=-100A) Maximum Recurrent Peak Reverse Voltage VI(on) (VO=-0.3V, IO=-2mA) Maximum RMS Voltage VO(on) Output voltage = (IO/II -10mA/-0.5mA II = Input currentVoltage (VI -5V) Maximum DC Blocking IO(off) Output current (VCC= =-50V, VI 0) Maximum Average Forward Rectified Current GI DC current gain (VO=-5V, = IO -5mA) R1 Input resistance Peak Forward Surge Current 8.3 ms single half sine-wave R2/R1 Resistance ratio superimposed on rated load (JEDEC method) Transition frequency fT (VO=-10V, IO=5mA, f=100MHz) Typical Thermal Resistance (Note 2) .110(2.80) For capacitive load, derate current by 20% Electrical Characteristics RATINGS @ 25к .083(2.10) .006(0.15)MIN. Dimensions in inches and (millimeters) by cathode band Min Symbol • Polarity : Indicated Parameter Typ Max Unit VCC Supply voltage ---50 --V • Mounting Position : Any VIN Input voltage -40 --10 V • Weight : Approximated 0.011 gram -30 IO Output current ----mA IC(MAX) -100 Pd PowerMAXIMUM dissipation --200 --mW RATINGS AND ELECTRICAL CHARACTERISTICS Tj Junction temperature --150 --ć Ratings at 25℃ ambient temperature unless otherwise specified. Tstg Storage temperature -55 --150 ć Single phase half wave, 60Hz, resistive of inductive load. inches mm 2- Thermal Resistance From Junction to Ambient .037 .950 .037 .950 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA144ECA THRU PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTA144ECATHRU PNP Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Features Pb Free Produc SOD-123+ PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) • High current capability, (1)low (2)forward voltage drop. DTA144ECA –T Tape& Reel: 3 Kpcs/Reel surge capability. G ‐WS • High Guardring for overvoltage protection. • Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 RoHS product for packing code suffix "G" • Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Singlespecification herein, to make corrections, modifications, enhancements or other phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM use of any product or circuit. superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 WILLAS products are not designed, intended or authorized for use in medical, -55 to +150 Operating Temperature Range TJ Marking Code - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage NOTES:such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures. Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.