BAV19WS FM120-M+ BAV20WSTHRU BAV21WS FM1200-M+ WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline FeaturesDIODE FAST SWITCHING • Batch process design, excellent power dissipation offers FEATURES z z z z z better reverse leakage current and thermal resistance. Fast• Low Switching Speedmounted application in order to profile surface optimize board space. Ideally Suited for Automatic Surface Mount Package • Low power loss, high efficiency. For •General Purpose Switching Applications High current capability, low forward voltage drop. surge capability. • Highpackage Pb-Free is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” high-speed switching. • Ultra Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • Moisture Sensitivity Level 1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" SOD-323 SOD-123H Insertion 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Polarity: Color band denotes cathode end Mechanical data 0.040(1.0) MARKING: BAV19WS: A8 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy BAV20WS: T2 SOD-123H : Molded plastic, • Case 0.031(0.8) Typ. 0.031(0.8) Typ. , BAV21WS: T3 • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum RatingsMethod and Electrical Characteristics, Single Diode @Ta=25℃ 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Parameter Symbol BAV19WS BAV20WS BAV21WS Unit • Mounting Position : Any 120 200 250 V VRM Non-Repetitive Reverse Voltage • WeightPeak : Approximated 0.011 gram Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. DC Blocking Voltage R Single phase half wave, 60Hz, resistive of inductive V load. For capacitive load, derate current by 20% VR(RMS) RMS Reverse Voltage RATINGS IFM Marking Code Average Output Current MaximumRectified Recurrent Peak Reverse Voltage Maximum RMS Voltage Peak Forward Surge Current @t=1.0ms 250 V 71 106 141 V IVORRM 12 20 13 30 14 40 VRMS 14 21 VDC 20 30 IFSM @ t=1.0s IO Maximum Average Forward Rectified Current 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Forward Continuous Current Maximum DC Blocking Voltage 100 Repetitive Peak Forward Current Peak Forward Surge Current 8.3 ms single half sine-wave Power Dissipation superimposed on rated load (JEDEC method) Thermal Resistance Junction Typical Thermal Resistance (Note 2)to 120 200 V 28 2.535 42 56 70 105 140 V 40 0.550 60 80 100 A 150 200 V 1.0 30 40 120 500 -55 to +125 TSTG Storage Temperature Range 10 115 100 mA 150 250 TJ Operating Temperature Range 18 80 IFSM Pd CJ Storage Temperature 16 60 625 RΘJA TSTG mA 15 200 50 IFRM RθJA Typical Junction Capacitance (Note 1) Ambient 400 -55~+150 A mW ℃ ℃/W -55 to +150 A mA - 65 to +175 ℃ Electrical Ratings @Ta=25℃ CHARACTERISTICS Parameter Maximum Average Reverse Current at @T A=25℃ Symbol @T A=125℃ Rated DC Blocking Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Forward voltage NOTES: IR Max 0.70 1.0 VF2 1.25 Reverse BAV19WS 2- Thermalcurrent Resistance From Junction to Ambient BAV20WS 0.50 Typ VF1 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Min Unit 0.5 10 V 0.1 IR BAV21WS 0.1 μA 0.1 0.92 V m IF=0.1A IF=0.2A VR=150V VR=200V CT 5 pF Reverse recovery time trr 50 ns 2012-1 Conditions VR=100V Capacitance between terminals 2012-06 0.9 0.85 VR=0V,f=1MHz IF=IR=30mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BAV19WS FM120-M+ BAV20WSTHRU BAV21WS FM1200-M+ WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. Forward Characteristics planar chip, metal silicon junction. •400Silicon epitaxial • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Typical Characteristics BAV19WS 1000 MIL-STD-19500 /228 300 Halogen free product for packing code suffix "H" 100 Ta=25℃ 10 0.031(0.8) Typ. Dimensions in inches and (millimeters) 1 VOLTAGE (V) Ratings at 25℃ ambientFORWARD temperature unlessVotherwise specified. F Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 12 20 13 30 Maximum RMS Voltage VRMSTa=25℃ 14 21 Maximum DC Blocking Voltage VDC 20 30 Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 0.8 Storage Temperature Range CHARACTERISTICS 80 VR 100 120 (V) 250 15 50 16 18 10 Power Derating Curve 60 80 100 28 35 42 56 40 50 60 80 115 150 120 200 Vo 70 105 140 Vo 100 150 200 Vo 1.0 30 200 Am Am 40 120 150 -55 to +125 VF 10 @T A=125℃ REVERSE VOLTAGE 300 14 40 ℃ P -55 to +150 100 ℃ - 65 to +175 ℃ FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH50 Maximum0.4Average Reverse Current at @T A=25℃ TSTG Maximum Forward Voltage at 1.0A DC 5 RΘJA Typical Thermal Resistance (Note 2) 0 60 (mW) IO IFSM Maximum Average Forward Rectified Current PD CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 1.2 Rated DC Blocking Voltage 40 REVERSE VOLTAGE SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Capacitance Characteristics Maximum1.4Recurrent Peak Reverse Voltage VRRM 0.6 0.031(0.8) Typ. 3 0.1 MAXIMUM AND ELECTRICAL CHARACTERISTICS 0.4 0.6 RATINGS 0.8 1.0 1.2 1.4 0 20 RATINGS 0.040(1.0) 0.024(0.6) 30 0.3 Marking Code Ta=100℃ (nA) • Polarity : Indicated by cathode band • 3Mounting Position : Any • Weight : Approximated 0.011 gram REVERSE CURRENT IR Method 2026 POWER DISSIPATION Ta =2 5℃ • Epoxy : UL94-V0 rated flame retardant 30 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 1 0.2 0.071(1.8) 0.056(1.4) Characteristics 100 Mechanical data Ta =1 00 ℃ FORWARD CURRENT IF (mA) • RoHS product for packing code suffix "G" 10 Reverse VR 15 (V) IR 0.50 20 0 0.70 0.9 0.85 0.92 0.5 0 25 50 10 Vo 75 AMBIENT TEMPERATURE 100 Ta 125 150 mA (℃ ) NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAV19WS BAV20WS BAV21WS SOD-323 Plastic-Encapsulate Diodes Outline Drawing SOD-323 .075(1.90) .059(1.50) .045(1.15) .010(0.25) .016(0.40) .091(2.30) .057(1.45) .106(2.70) .043(1.10) .031(0.80) .004(0.10)MAX. .008(0.20) .004(0.10) .016(0.40) .010(0.25) .010(0.25)MIN. Dimensions in inches and (millimeters) Rev.C 2012-1 WILLAS ELECTRONIC CORP.