WILLAS FM120-M+ MSEMF3V3LCC THRU Low Capacitance Quad Array for ESD Protection FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H General Description surface mounted application in order to Features • Low profile optimize board space. This integrated transient voltage suppressor • Low power loss, high efficiency. device (TVS) is designed for applications requiring current capability, low forward voltage drop. • High surge capability. • Highovervoltage transient protection, printers, business Guardring for overvoltage protection. • machines, communication systems, medical • Ultra high-speed switching. equipment, other applications. Its integrated epitaxial planar chip, metal silicon junction. • Silicon and parts very meet environmental standards of • Lead-free design provides effective and reliable MIL-STD-19500 /228 protection for separate using for packing lines code suffix "G" only one • RoHS product Halogen free product for packing code suffixsituations "H" package. These devices are ideal for Four Separate Unidirectional Configurations for z 0.012(0.3) Typ. z Low Leakage Current < 1 μA @ 3Volts z Power Dissipation: 380mW z Small SOT-563 SMT Package z Low Capacitance z Complies to USB 1.1 Low Speed & Speed 0.071(1.8) 0.056(1.4) Specifications Mechanical data where board space is at a premium. z • Epoxy : UL94-V0 rated flame retardant z • Case : Molded plastic, SOD-123H , Applications • Terminals :Plated terminals, solderable per MIL-STD-750 z Serial and Parallel Ports Method 2026 These are Pb-Free Devices 0.040(1.0) 0.024(0.6) Pb-Free package is available 0.031(0.8) Typ. 0.031(0.8) Typ. RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” Complies with the following standards Dimensions in inches and (millimeters) z Microprocessor Based Equipment • Polarity : Indicated by cathode band Notebooks, Desktops, : Any Servers • Mounting Position IEC61000-4-2 z • Weight :and Approximated 0.011 gram Cellular Portable Equipment Level 4 z 0.146(3.7) 0.130(3.3) Protection 15 kV (air discharge) 8 kV(contact discharge) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MIL STD 883E - Method 3015-7 Class 3 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 25 kV HBM (Human Body Model) Functional diagram RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) SOT-563 Typical Junction Capacitance (Note 1) Storage Temperature Range Maximum Ratings Symbol (TA=25°C) CHARACTERISTICS RΘJA CJ TJ Operating Temperature Range 1.0 30 -55 to +125 RθJA NOTES: Parameter 2012-09 @T A=125℃ 0.50 IR Thermal Resistance, Junction-to-Ambient Above 25℃, Derate TJmax Maximum Junction Temperature TJ Tstg Operation Junction and Storage Temperature Range 2012-06 Value Units 25 W SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 2- Thermal Resistance From Junction to Ambient TL -55 to +150 - 65 to +175 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. ℃ TSTG Maximum Current @T A=25℃Diode PDAverage Reverse Steady Stateat Power-1 40 120 PPK PeakatPower A=25℃) Maximum Forward Voltage 1.0A DCDissipation(8×20μs@T VF Rated DC Blocking Voltage Lead Solder Temperature(10 seconds duration) 0.70 0.5 10 0.85 380 mW 0.9 327 ℃/W 3.05 Mw/℃ 150 ℃ -55 to +150 ℃ 260 ℃ 0.92 m WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MSEMF3V3LCC THRU Low Capacitance Quad Array for ESD Protection FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features Electrical Parameter • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H application in order to • Low profile surface mountedParameter Symbol optimize board space. Reverse Peak Pulse Current loss, high efficiency. • ILow PP powerMaximum • High current capability, low forward voltage drop. Clamping Voltage @ IPP C High surge capability. •V for overvoltage •VGuardring Working Peak protection. Reverse Voltage RWM • Ultra high-speed switching. Maximum Reverse Leakage Current @ IR epitaxial planar chip, metal silicon junction. • Silicon VRWM meet environmental standards of • Lead-free parts IT Test Current MIL-STD-19500 /228 • RoHS product for packing code suffix "G" VHalogen Breakdown Voltage @ IT "H" BR free product for packing code suffix 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data IF Forward Current 0.040(1.0) 0.024(0.6) Epoxy : UL94-V0 rated flame retardant •V Forward Voltage @ IF F • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Electrical Characteristics • Polarity : Indicated by cathode band VBR • Mounting Position : Any : Approximated Part• Weight Numbers Min.0.011 gram Typ. Dimensions in inches and (millimeters) C IT Max. VRWM bias MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS V V V mA V Ratings at 25℃ ambient temperature unless otherwise specified. MSEMF3V3LCC 5.6 load. 5.9 Single phase half wave, 60Hz,5.3 resistive of inductive For capacitive load, derate current by 20% 1. 2. Non-repetitive current per Figure 1. Typ. 0v IR 1 SYMBOL FM120-MH Only 1 diodeRATINGS under power. For 4 diodes under power 3.0 µA pF 1.0 12 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code 12 3. Capacitance ofReverse one diode at f=1MHz,T A=25℃ 20 Maximum Recurrent Peak Voltage VRRM 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave Typical Characteristics superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Figure 1 Pulse Width 2012-09 2012-06 Figure 2 Power Derating Curve WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MSEMF3V3LCC THRU Low Capacitance Quad Array for ESD Protection FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unlessversus otherwise specified. Figure 3 Reverse Leakage temperature Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Figure 4 Capacitance SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG Figure 5 8*20 Pulse Waveform Figure FM160-MH 6 Forward Voltage FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 U V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MSEMF3V3LCC THRU Low Capacitance Quad Array for ESD Protection FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline SOT-563 Mechanical Data Features power dissipation offers .024(0.60) • Batch process design, excellent.067(1.70) better reverse leakage current and thermal resistance. .059(1.50) • Low profile surface mounted application in order to .020(0.50) optimize board space. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .067(1.70) .059(1.50) .043(1.10) .051(1.30) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of .012(0.30) SOD-123H .004(0.10) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data .011(0.27) • Epoxy : UL94-V0 rated flame retardant .007(0.17) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .007(0.16) 0.031(0.8) Typ. .003(0.08) 0.031(0.8) Typ. .024(0.60) .020(0.50) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .067(1.70) Ratings at 25℃ ambient temperature unless otherwise specified. .059(1.50) Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U FM120-MHand Dimensions SYMBOL in inches (millimeters) RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current Typical Peak Forward Surge Current 8.3 ms single half sine-wave MILLIMETERS superimposedDIM on rated load (JEDEC method) Typical Thermal1Resistance (Note 0.30 2) Typical Junction Capacitance (Note 1) 2 Operating Temperature Range 3 Storage Temperature Range 4 5 IO IFSM INCHES 0.51 0.020 TSTG 1.40 0.055 0.51 -55 to +125 TJ A A ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 0.020 VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 CJ 0.040 CHARACTERISTICS R0.012 ΘJA 1.02 Maximum Forward Voltage at 1.0A DC 1.0 30 @T A=125℃ 0.50 0.70 0.85 0.5 IR 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Type number 2- Thermal Resistance From Junction to Ambient 2012-09 MSEMF3V3LCC 2012-06 Marking code 3C WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.