WILLAS FM120-M+ BAS70xTHRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SWITCHING DIODE surface mounted application in order to • Low profile FEATURES optimize board space. power loss, high efficiency. • Lowturn-on z Low voltage High current capability, low forward voltage drop. • z Fast switching High surge capability. • z Also available in lead free version for overvoltage protection. • Guardring z Pb-Free package is available • Ultra high-speed switching. RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product packing code suffix “H” parts meet for environmental standards of • Lead-free SOD-123H SOT-23 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228Level 1 Moisture Sensitivity z • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , BAS70 Marking: 73 terminals, BAS70S Marking: 74 BAS70C Marking: 75 • Terminals :Plated solderable per MIL-STD-750 0.031(0.8) Typ. BAS70A Marking: 76 Method 2026 • Polarity : Indicated by cathode band MAXIMUM RATINGS @Ta=25℃ • Mounting Position : Any • Weight : Approximated 0.011 gram Symbol VR Dimensions in inches and (millimeters) Parameter Value MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS DC Voltage Ratings at 25℃ ambient temperature unless otherwise specified. Forward Continuous Current IF Single phase half wave, 60Hz, resistive of inductive load. Power ForPcapacitive load, derateDissipation current by 20% D RθJA Marking Code 70 V 70 mA 200 mW FM180-MH FM1100-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH RATINGS ℃ FM1150-MH FM1200-MH UNIT Thermal Resistance Junction to Ambient 500 VRRM 12 20 13 30 14 40 15 50 VRMS 14 21 28 35 -55~+150 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Parameter IO Symbol IFSM Typical Thermal Resistance (Note 2) Reverse breakdown voltage RΘJA V(BR) TJ Operating Temperature Maximum Recurrent Peak Reverse Voltage Storage Tstg RMS Voltage Maximum Temperature 16 -55~+125 60 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) Operating Temperature Reverse voltageRange leakag e Storage Temperature Range CHARACTERISTICS Diode cap acitance Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Reveres recovery time -55 to +125 10 ℃ 100 56 70℃ 80 100 4070 120 IR= 10µA - 65 to +175 115 150 120 200 Volts 105 140 Volts 150 200 Volts Amp Max -55 to +150 TSTG Forward voltage 18 80 1.0 Min 30 Test conditions TJ I VR 50V current = R Maximum Forward Voltage at 1.0A DC Unit 120 Unit Amp V ℃/W nA ℃ PF 410 IF=1mA mV VF 1000 I =15mA SYMBOL FM120-MH FFM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF C D @T A=125℃ NOTES: IR trr VR= 0V 0.50 f= 1MHz IF=IR=10mA,Irr=0.1xIR, RL=100Ω 0.70 0.5 10 0.852 0.9 5 ns pF 0.92 ℃ UNIT Volts mAmp 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS70x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Typical Characteristics (uA) Mechanical data Epoxy : UL94-V0 rated flame retardant • 0.1 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.4 0.6 0.8 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) REVERSE CURRENT IR C o Halogen free product for packing code suffix "H" 0.2 0.130(3.3) Ta=100 C o =1 00 a T T= a 2 5 IF FORWARD CURRENT MIL-STD-19500 /228 0.01 0.0 Characteristics 0.146(3.7) o 1 product for packing code suffix "G" • RoHS • Polarity : Indicated by cathode band FORWARD VOLTAGE VF • Mounting Position : Any • Weight : Approximated 0.011 gram SOD-123H Reverse 10 C (mA) better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. Forward Characteristics Low power loss, high efficiency. •100 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. Ultra high-speed switching. • 10 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 1 0.1 0.031(0.8) Typ. 0.01 1.0 0.040(1.0) 0.024(0.6) o Ta=25 C 0 10 0.031(0.8) Typ. 20 30 40 50 Dimensions in inches and (millimeters) (V) REVERSE VOLTAGE VR 60 70 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (mW) 250 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS 3 Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC 2 Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave 1 on rated load (JEDEC method) superimposed Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 0 0 5 Storage Temperature Range 10 REVERSE VOLTAGE CHARACTERISTICS 15TSTG VR 200 150 14 40 15 50 16 60 120 200 Vol 28 35 42 56 70 105 140 50 60 80 100 150 200 Volt 1.0 30 40 120 50 (V) 115 150 40 100 0 10 100 Volt -55 to +125 20 18 80 Am 75 100 65 to +175 AMBIENT TEMPERATURE Ta 25 ℃/W PF -55 to +150 0 Am 50- ℃ 125 150 ℃ (℃) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage RΘJA Typical Thermal Resistance (Note 2) POWER DISSIPATION Power Derating Curve 300 PD CAPACITANCE BETWEEN TERMINALS CT (pF) Ratings at 25℃ ambient temperature unless otherwise specified. Capacitance Characteristics 4 Single phase half wave, 60Hz, resistive of inductive load. T =25℃ a For capacitive load, derate current by 20% f=1MHz @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS70x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOD-123H SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant.106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage .080(2.04) .070(1.78) 12 20 VRMS 14 21 28 35 42 56 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR NOTES: .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 15 50 16 60 18 80 2- Thermal Resistance From Junction to Ambient .008(0.20) 10 115 100 150 .003(0.08) 70 105 100 150 120 200 Volt 140 Volt 200 Volt 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 14 40 TSTG .004(0.10)MAX. 13 30 0.50 0.70 0.85 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.9 0.92 Volt 10 mAm Dimensions in inches and (millimeters) 2012-06 2012-11 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BAS70x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features Pb Free Product Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (1) (2) capability. • High surge Part Number ‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Vol V RRM which may be included on WILLAS data sheets and/ or specifications can Vol 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Vol Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN or indirectly cause injury or threaten a life without expressed written approval Vol 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES: MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.