WILLAS SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FAST SWITCHING DIODE Package outline FM120-M+ THRU 1N4448WS FM1200-M+ Pb Free Product Features FEATURES • Batch process design, excellent power dissipation offers reverse leakage z Fastbetter Switching Speedcurrent and thermal resistance. • Low profile surface mounted application in order to z Surface Mount Ideally Suited for Automatic Insertion optimize board Package space. Low power loss, high efficiency. • z For General Purpose Switching Applications • High current capability, low forward voltage drop. z High Conductance surge capability. • High z Pb-Free package is available for overvoltage protection. • Guardring Ultra high-speed switching. • RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of z Moisture Sensitivity MIL-STD-19500 /228Level 1 z product for packing code suffix "G" • RoHSColor Polarity: band denotes cathode end SOD-123H SOD-323 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" MARKING: T5 Mechanical data Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ : UL94-V0 rated flame retardant • Epoxy • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , Parameter Symbol Limit • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 Non-Repetitive Peak Reverse Voltage 0.031(0.8) Typ. Unit 100 VRM • Polarity : Indicated by cathode band Peak Repetitive Peak Reverse Voltage • Mounting Position : Any Working Peak Reverse Voltage • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) V Dimensions in inches and (millimeters) VRRM VRWM 75 V VR DC Blocking Voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VR(RMS) RMS Reverse Voltage Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. IFM Forward Continuous Current For capacitive load, derate current by 20% IO Average Rectified Output Current RATINGS IFSM VRRM Maximum Recurrent Peak Reverse Voltage @t =1.0s 13 30 500 mA 250 mA VRMS 14 21 28 VDC 20 30 40 Pd 4.0 15 14 40 Maximum DC Blocking Voltage Thermal Resistance Junction to 16 60 50 1.5 42 56 70 60 80 100 Storage Temperature superimposed on rated load (JEDEC method) TSTG -55~+150 Typical Thermal Resistance (Note 2) RΘJA Peak Forward Surge Current 8.3 ms single half sine-wave Electrical Ratings @Ta=25℃ Typical Junction Capacitance (Note 1) Parameter Storage Temperature Range Symbol TSTG Reverse breakdown voltage CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Forward voltage @T A=125℃ NOTES: 40 120 -55 to +125 Min Typ Max 0.62 0.50 0.72 Reverse recovery time 2012-06 2012-1 Vol 105 140 Vol 150 200 Vol mW Am ℃/W Am ℃ ℃/W PF ℃ - 65 to +175 Conditions V ℃ IR=10μA 0.70 V 0.5 0.85 IF=5mA 0.855 V VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 2.5 μA VR=75V IR2 25 nA VR=20V CT 4 pF VR=0V,f=1MHz trr 4 ns 10 0.9 0.92 Vol IR VF2 2- Thermal Resistance From Junction to Ambient Capacitance between terminals 120 200 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse current Unit A 115 -55 to +150 75 V (BR) VF VF1 Maximum Forward Voltage at 1.0A DC 1.0 30 CJ TJ Operating Temperature Range Rated DC Blocking Voltage IFSM 10 100 35 625 Ambient 18 80 50 200 O RIθJA Maximum Average Forward Rectified Current 12 20 Maximum RMS Voltage Power Dissipation V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Peak Forward Surge Current @t=1.0μs Marking Code 53 IF=10mA mAm IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1N4448WSTHRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to (nA) T= a 10 0℃ • 10 Mechanical data • 3Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , 1 • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 •0.3Polarity : Indicated by cathode band •0.1Mounting Position : Any 0.0 0.4 0.8 • Weight : Approximated 0.011 gram FORWARD VOLTAGE VF 1.2 Characteristics 0.071(1.8) 0.056(1.4) 300 100 0.040(1.0) 0.024(0.6) 30 Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. 10 3 1 1.6 Ta=100℃ 1000 Dimensions in inches and (millimeters) 0 20 (V) 40 60 REVERSE VOLTAGE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Ta=25℃ CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 (mW) Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage VDC 20 30 Maximum1.2Average Forward Rectified Current IO IFSM superimposed on rated load (JEDEC method) 1.0 Storage Temperature Range 0 TSTG CHARACTERISTICS 4 8 12 Maximum Forward Voltage at 1.0A DC REVERSE VOLTAGE V Maximum Average Reverse Current at @T A=25℃ R Rated DC Blocking Voltage (V) @T A=125℃ 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 30 150 100 Am Am 40 120 -55 to +125 50 TJ Operating0.8Temperature Range 200 15 50 CJ Typical Junction Capacitance (Note 1) 0.6 RΘJA Typical Thermal Resistance (Note 2) 21 14 40 PD 1.4 Peak Forward Surge Current 8.3 ms single half sine-wave VR 100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH250 Marking Code 80 Power Derating Curve Capacitance Characteristics 1.6 POWER DISSIPATION 0.012(0.3) Typ. 3000 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 30 0.146(3.7) 0.130(3.3) Reverse 10000 T =2 a 5℃ FORWARD CURRENT IF (mA) z Typical Characteristics REVERSE CURRENT IR optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. capability. Characteristics • High surge Forward 300 • Guardring for overvoltage protection. • Ultra high-speed switching. •100Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of ℃ P -55 to +150 ℃ - 65 to +175 ℃ 0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH 16 VF (V) IR 20 0 0.50 25 50 75 100 0.70 0.85 AMBIENT TEMPERATURE Ta 0.5 125 (℃) 150 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 1N4448WS FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOD-123H SOD-323 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .091(2.30) .010(0.25) .016(0.40) Mechanical data .075(1.90) .059(1.50) .045(1.15) • .057(1.45) .106(2.70) MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .043(1.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .031(0.80) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .004(0.10)MAX. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vol Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vol Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vol Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .008(0.20) .004(0.10) 40 120 -55 to +125 CHARACTERISTICS Am ℃/W PF ℃ - 65 to +175 .016(0.40) 0.50 .010(0.25) ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Am -55 to +150 TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ IR 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm NOTES: .010(0.25)MIN. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.C CORP. WILLAS ELECTRONIC CORP.