WILLAS FM120-M+ THRU SESD8L5.0CT5 FM1200-M+ Transient Voltage Suppressors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. ESD Protection Diodes with Ultra−Low for overvoltage protection. • Guardring Ultra high-speed switching. • Capacitance • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of The ESD8L is designed to protect voltage sensitive components that MIL-STD-19500 /228 require ESD and transient voltage events. product forcapacitance packing code from suffix "G" • RoHSultra−low Excellent clamping capability, low capacitance, low leakage, and fast Halogen free product for packing code suffix "H" response time, make these parts ideal for ESD protection on designs Mechanical data where board space is at a premium. Because of its low capacitance, it is UL94-V0 flame retardant • Epoxy suited for :use in highrated frequency designs such as USB 2.0 high speed and : Molded plastic, SOD-123H • Caseline antenna applications. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 Specification Features: Method 2026 • Ultra Low Capacitance 0.5 pF • Polarity : Indicated by cathode band • Low Clamping Voltage Mounting Position Body Outline: Any Dimensions: • •Small 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1 0.071(1.8) 0.056(1.4) 2 0.040(1.0) 0.024(0.6) SOD-882 0.031(0.8) Typ. 1 2 Dimensions in inches and (millimeters) • Weight 0.039″: Approximated x 0.024″ (1.000.011 mm gram x 0.60 mm) • Low Body Height: 0.016″ (0.4 mm) MAXIMUM AND ELECTRICAL CHARACTERISTICS Voltage: 5RATINGS V • Stand−off Ratings at 25℃ ambient temperature unless otherwise specified. • Low Leakage Single phase half wave, 60Hz, resistive of inductive • Response Time is Typically < 1.0 ns load. For capacitive load, derate current by 20% Level 4 ESD Protection • IEC61000−4−2 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS • This is a Pb−Free Device Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage Mechanical Characteristics: VDC 20 30 40 50 60 80 100 150 200 Volts CASE: Void-free, thermosetting plastic Maximum Average Forward transfer-molded, Rectified Current IO 18 80 Epoxy Meets UL 94 V−0 Peak Forward Surge Current 8.3 ms single half sine-wave LEAD FINISH: 100% Matte Sn (Tin) superimposed on rated load (JEDEC method) TypicalQUALIFIED Thermal Resistance (Note 2) RΘJA MAX REFLOW TEMPERATURE: 260°C TypicalDevice JunctionMeets Capacitance 1) CJ MSL (Note 1 Requirements Operating Temperature Range Storage Temperature Range 1.0 30 IFSM TJ 40 120 -55 to +125 Amps Amps -55 to +150 - 65 to +175 TSTG MAXIMUM RATINGS ℃/W PF ℃ ℃ CHARACTERISTICS Rating FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH Symbol Value Unit Volts 0.9 0.92 V F 0.50 0.70 0.85 IEC 61000−4−2 (ESD) Contact ±8 kV 0.5 Maximum Average Reverse Current at @T A=25℃ Air IR mAmps 10 @T A=125℃ Rated DCTotal Blocking Voltage Power Dissipation on FR−5 Board °PD° 150 mW (Note 1) @ TA = 25°C Maximum Forward Voltage at 1.0A DC NOTES: Storage Temperature 1- Measured at 1 MHZ and appliedRange reverse voltage of 4.0 VDC.Tstg −55 to +150 °C Temperature Range 2- ThermalJunction Resistance From Junction to Ambient TJ −55 to +125 °C TL 260 °C Lead Solder Temperature − Maximum (10 Second Duration) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. 2012-06 2014-03 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SESD8L5.0CT5 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Transient Voltage Suppressors Package outline FeaturesCHARACTERISTICS ELECTRICAL process design, excellent •ABatch (T = 25°C unless otherwise noted) power dissipation offers better reverse leakage current and thermal resistance. Parameter Low profile surface mounted application in order to •Symbol optimize board space. IPP Maximum Reverse Peak Pulse Current • Low power loss, high efficiency. VC current Clamping Voltage @forward IPP capability, low voltage drop. • High surge capability. • VHigh Working Peak Reverse Voltage RWM • Guardring for overvoltage protection. IR Maximum Reverse Leakage Current @ VRWM high-speed switching. • Ultra VBR epitaxial Breakdown Voltage IT planar chip,@metal silicon junction. • Silicon parts meet environmental standards of • Lead-free IT Test Current MIL-STD-19500 /228 IF product Forward Currentcode suffix "G" for packing • RoHS Halogen free product for packing V Forward Voltage @ I code suffix "H" F Pb Free Product SOD-123H I I0.146(3.7) PP 0.130(3.3) 0.012(0.3) Typ. IT VC VBR VRWM IR 0.071(1.8) 0.056(1.4) IR VRWM VBR VC IT V IPP F Mechanical data P Peak Power Dissipation Bi−Directional TVS pk • Epoxy : UL94-V0 rated flame retardant C Capacitance @ VR = 0 and f = 1.0 MHz • Case : Molded plastic, SOD-123H *See Application Note AND8308/D for detailed explanations of , • datasheet Terminalsparameters. :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any ELECTRICAL CHARACTERISTICS • Weight : Approximated 0.011 gram (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) MAXIMUM RATINGS CHARACTERISTICS VRWMAND IELECTRICAL VBR (V) @ IT (mA) R (V) otherwise @ VRWM Ratings at 25℃ ambient temperature unless specified.(Note 2) Single phase half wave, 60Hz, resistive of inductive load. Device For capacitive load, derateMarking current by 20% Max Max Min Device SESD8L5.0CT5RATINGS N 5.0 IT C (pF) mA 12 13 14 20 temperature 30 Maximum Peak Reverse RRM 2. Recurrent VBR is measured with aVoltage pulse test current ITVat an ambient of 40 25°C. 3. RMS SurgeVoltage current waveform per Figure 5. 14 21 28 Maximum VRMS 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Maximum DC Blocking Voltage 20 30 40 VDC Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range Max Max 15 50 16 60 10 See Below 115 100 150 18 80 120 200 Volts 35 42 56 70 105 140 Volts 50 60 80 100 150 200 Volts IO IFSM RΘJA Typical Thermal Resistance (Note 2) VC Per IEC61000−4−2 (Note 4) FM130-MH FM140-MH FM150-MH FM1150-MH SYMBOL FM120-MH UNIT 1.0 5.4 1.0 0.9 FM160-MH FM180-MH 12.9 FM1100-MH Figures 1 and FM1200-MH 2 Marking Code VC (V) @ IPP = 1 A (Note 3) 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 2012-06 2014-03 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Transient Voltage Suppressors Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage IEC 61000−4−2 Spec. current and thermal resistance. • Low profile surface mounted application in order to Ipeak Current at Current at Voltage Current loss, high efficiency. • Low power 30 ns (A) 60 ns (A) (kV) (A) Level • High current capability, low forward voltage drop. 1 surge capability. 2 7.5 4 2 • High for • Guardring 2 4 overvoltage 15 protection.8 4 • Ultra high-speed switching. 3 6 12 epitaxial planar 22.5 chip, metal silicon junction.6 • Silicon parts standards of 8 • Lead-free 4 8 meet environmental 30 16 100% Test space. First Peak optimize board • FM120-M+ THRU SESD8L5.0CT5 FM1200-M+ IEC61000−4−2 Waveform SOD-123H 0.146(3.7) 0.130(3.3) 90% 0.012(0.3) Typ. I @ 30 ns 0.071(1.8) 0.056(1.4) I @ 60 ns MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 10% Mechanical data tP = 0.7 ns to 1 ns 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Figure 3. IEC61000−4−2 Spec • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , Oscilloscope ESD Gun • Terminals :Plated terminals, solderable per MIL-STD-750 TVS 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 50 W Cable 50 W MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FigureFM120-MH 4. Diagram of ESD Test Setup Marking Code Maximum Recurrent PeakisReverse RRM The following taken Voltage from ApplicationVNote 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 systems such as cell42phones or laptop70 computers it is not 14 21 28 35 56 105 140 Maximum RMS Voltage VRMS AND8308/D − Interpretation of Datasheet Parameters clearly defined in the spec how to specify a clamping voltage forDC ESD Devices. Maximum Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC at the device level. WILLAS has developed a way to examine Maximum Average Forward Rectified Current IO 1.0 the entire voltage waveform across the ESD protection ESD Voltage Clamping ForSurge sensitive elements it is important to limit the diode over the time domain of an ESD pulse in the form of an Peak Forward Currentcircuit 8.3 ms single half sine-wave 30 IFSM voltage will be exposed to during an ESD event oscilloscope screenshot , which can be found on the superimposed on that rated an loadIC (JEDEC method) to as low a voltage as possible. The ESD clamping voltage datasheets for all ESD40protection diodes . For more Typical Thermal Resistance (Note 2) RΘJA is the voltage drop across the ESD protection diode during information on how WILLAS creates these screenshots 120 Typical Junction Capacitance (Note 1) CJ an ESD event per the IEC61000−4−2 waveform. Since the and how to interpret them please refer -55 to +125 -55 to +150to AND8307/D. Operating Temperature Range TJ IEC61000−4−2 was written as a pass/fail spec for larger 65 to +175 Storage Temperature Range TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC % OF PEAK PULSE CURRENT 100 t PEAK VALUE I VF 80 NOTES: Amps Amps ℃/W PF ℃ ℃ @ 8 ms 0.50 WIDTH (tP) IS DEFINED 0.70 PULSE AS THAT POINT WHERE THE 0.5 PEAK CURRENT DECAY = 8 ms 10 IR 70 @T A=125℃ Volts r RSM FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM120-MH FM130-MH SYMBOL 90 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Volts Volts 60 0.85 0.9 0.92 Volts mAmps HALF VALUE IRSM/2 @ 20 ms 50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 40 30 10 0 2012-06 2014-03 tP 20 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform 80 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SESD8L5.0CT5 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Transient Voltage Suppressors Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) SOD-882 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" DIMENSION OUTLINE: Halogen free product for packing code suffix "H" Unit:mm Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2014-03 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. SESD8L5.0CT5 Transient Voltage Suppressors Ordering Information: Device PN SESD8L5.0CT5G(1)‐WS Packing Tape&Reel: 10 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014-03 WILLAS ELECTRONIC CORP.