NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers NPN PNP Silicon better and reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. These transistors are designed for general purpose amplifier applications. They are housed • Low power loss, high efficiency. the SOT–323/SC–70 which designedvoltage for low power current capability, lowisforward drop. surface mount applications. •inHigh • High surge capability. ƽ We declare that the material of product compliance with RoHS requirements. for overvoltage protection. • Guardring Pb-Free package is available high-speed switching. • Ultra RoHS product for packing code suffix ”G” epitaxial planar chip, metal silicon junction. • Silicon parts meet environmental standards of • Lead-free Halogen free product for packing code suffix “H” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT– 323 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 GENERAL PURPOSE • RoHS product for packing code suffix "G" AMPLIFIER TRANSISTORS SURFACE MOUNT Halogen free product for packing code suffix "H" DEVICE MARKING AND ORDERING INFORMATION Mechanical data Device Marking Package : UL94-V0 rated flame retardant • Epoxy MMBT3904WT1 AM SOT-323/SC-70 : Molded plastic, SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 MMBT3906WT1 2A SOT-323/SC-70 0.040(1.0) 0.024(0.6) Shipping 3000/Tape&Reel 0.031(0.8) Typ. 0.031(0.8) Typ. 3000/Tape&Reel Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any •MAXIMUM Weight : Approximated RATINGS 0.011 gram Dimensions in inches and (millimeters) Rating Symbol Value 3 COLLECTOR Unit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Collector–Emitter Voltage MMBT3904WT1 V CEO Ratings at 25℃ ambient temperature unless otherwise specified. MMBT3906WT1 Single phase half wave, 60Hz, resistive MMBT3904WT1 of inductive load. Collector–Base Voltage V CBO For capacitive load, derate current by 20% MMBT3906WT1 40 Vdc – 40 1 BASE 60 Vdc – 40 2 FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH RATINGS Emitter–Base Voltage MMBT3904WT1 V EBO FM130-MH 6.0 FM140-MH Vdc FM150-MH FM160-MH FM180-MH FM1100-MH EMITTER MMBT3906WT1 –135.0 Marking Code 12 14 15 16 18 10 115 120 MMBT3904WT1 30200 40 60 80 100 150 200 Maximum Recurrent Peak Reverse VoltageMMBT3904WT1 Collector Current — Continuous I C20 mAdc 50 Volts VRRM MMBT3906WT1 VRMS Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) THERMAL CHARACTERISTICS Typical Junction Capacitance (Note 1) Characteristic –21200 28 35 42 56 20 30 40 50 60 80 1.0 30 RΘJA CJ Symbol Max -55 to +125 150 Unit 40 120 70 3 105 OR 100 COLLECT 150 140 Volts 200 Volts Amps 1 B ASE Amps 2 EMIT T ER ℃/W PF MMBT3906WT1 -55 to +150 TJ ℃ Total Device Dissipation (1) PD mW - 65 to +175 TSTG ℃ T A =25 °C Thermal Resistance, Junction to Ambient R θJA 833 °C/W CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Junction and Storage Temperature T J , T stg –55 to +150 °C Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Operating Temperature Range Storage Temperature Range 14 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.5 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-11 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ PNP THRU MMBT3906WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V WILLAS Pb Free Product SOD-123+ PACKAGE Package ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Features Characteristic power dissipation offers • Batch process design, excellent better reverse leakage current and thermal resistance. OFF CHARACTERISTICS surface mounted application in order to • Low profile Collector–Emitter Breakdown Voltage (2) optimize board space. MMBT3904WT1 (I C = 1.0 mAdc, I B = 0) loss, high efficiency. • Low power (I C = –1.0 mAdc, I B = 0) MMBT3906WT1 • High current capability, low forward voltage drop. Breakdown Voltage surge capability. • High Collector–Base (I C = 10 I E = 0) protection. MMBT3904WT1 forµAdc, overvoltage • Guardring (I C = –10 µAdc, I E = 0) MMBT3906WT1 switching. • Ultra high-speed Emitter–Base Breakdown epitaxial planar chip, Voltage metal silicon junction. • Silicon • Lead-free parts meet environmental standards of (IE= 10 µAdc,/228 I C = 0) MMBT3904WT1 MIL-STD-19500 for packing code suffix "G" • RoHS(Iproduct MMBT3906WT1 E = –10 µAdc, I C = 0) Halogen free product for packing code suffix "H" Base Cutoff Current Mechanical data (V CE = 30 Vdc, V EB = 3.0 Vdc) MMBT3904WT1 V EB = –3.0 Vdc) MMBT3906WT1 CE = –30 Vdc, rated flame retardant • Epoxy(V: UL94-V0 Symbol outline Min Max Unit SOD-123H V(BR)CEO V(BR)CBO V(BR)EBO I BL Current : MoldedCutoff plastic, SOD-123H • CaseCollector , (V CE = 30 Vdc, V EB = 3.0 Vdc) MMBT3904WT1 • Terminals :Plated terminals, solderable per MIL-STD-750 40 – 40 0.146(3.7) 0.130(3.3) — — Vdc 60 – 40 — — Vdc 6.0 — Vdc – 5.0 — — 50 — -50 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) nAdc 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. I CEX — 50 nAdc (V CE = –30 Vdc, V EB = –3.0 Vdc) MMBT3906WT1 — – 50 Method 2026 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Dimensions in inches and (millimeters) • 2. Polarity : Indicated by cathode band Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-11 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ PNP THRU MMBT3906WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V WILLAS Pb Free Product SOD-123+ PACKAGE ELECTRICAL CHARACTERISTICS (T Features A Package = 25°C unless otherwise noted) (Continued)outline Characteristic power dissipation offers • Batch process design, excellent better reverse leakage current ON CHARACTERISTICS (2) and thermal resistance. • Low profile surface mounted application in order to DC Current Gain optimize board space. (I C =loss, 0.1 mAdc, V CE = 1.0 Vdc) MMBT3904WT1 high efficiency. • Low power (I = 1.0 mAdc, V = 1.0 Vdc) C CE • High current capability, low forward voltage drop. (I C = capability. 10 mAdc, V CE = 1.0 Vdc) • High surge (I C =for 50overvoltage mAdc, V CE =protection. 1.0 Vdc) • Guardring switching. • Ultra high-speed (I C = 100 mAdc, V CE = 1.0 Vdc) planar Vchip, metal silicon junction. • Silicon (Iepitaxial Vdc) MMBT3906WT1 C = –0.1 mAdc, CE = –1.0 • Lead-free (I C =parts –1.0 meet mAdc,environmental V CE = –1.0 Vdc)standards of MIL-STD-19500 /228 (I C = –10 mAdc, V CE = –1.0 Vdc) for packing code suffix "G" • RoHS product (I C = –50 mAdc, V CE = –1.0 Vdc) Halogen free product for packing code suffix "H" (I C = –100 mAdc, V CE = –1.0 Vdc) Mechanical data Collector–Emitter Saturation Voltage rated flame retardant • Epoxy :(IUL94-V0 MMBT3904WT1 C = 10 mAdc, I B = 1.0 mAdc) plastic,I BSOD-123H • Case : Molded (I C = 50 mAdc, = 5.0 mAdc) , (I C =:Plated –10 mAdc, I B = –1.0 mAdc) perMMBT3906WT1 • Terminals terminals, solderable MIL-STD-750 (I C =Method –50 mAdc, I B = –5.0 mAdc) 2026 Base–Emitter Saturation Voltage • Polarity : Indicated by cathode band (I C = 10 mAdc, I B = 1.0 mAdc) MMBT3904WT1 • Mounting Position : Any (I C = 50 mAdc, I B = 5.0 mAdc) • Weight (I: Approximated 0.011 gram MMBT3906WT1 C = –10 mAdc, I B = –1.0 mAdc) (I C = –50 mAdc, I B = –5.0 mAdc) Symbol Min h FE Unit –– 40 70 100 60 30 –– –– 300 –– –– 0.146(3.7) 0.130(3.3) 60 80 100 60 30 –– –– 300 –– –– –– –– –– –– 0.2 0.3 – 0.25 – 0.4 VCE(sat) 0.031(0.8) Typ. V BE(sat) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Vdc 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters)Vdc MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Max SOD-123H 0.65 –– – 0.65 –– 0.85 0.95 – 0.85 – 0.95 Ratings at 25℃ ambient temperature unless otherwise specified. SMALL–SIGNAL CHARACTERISTICS Single phase half wave, 60Hz, resistive of inductive load. Current–Gain — Bandwidth Product fT MHz For capacitive load, derate current by 20% (I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz) MMBT3904WT1 300 –– FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT (I C = RATINGS –10 mAdc, V CE= –20 Vdc, f = SYMBOL 100 MHz)FM120-MH MMBT3906WT1 250 –– Marking Code Output Capacitance 12 13 14 15 C obo 16 18 10 120 pF115 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MMBT3904WT1 –– 4.0 Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS (V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz) MMBT3906WT1 –– 4.5 Volts Maximum DC Blocking Voltage 20 30 40 50 C ibo 60 80 100 200 Input Capacitance pF150 VDC MMBT3904WT1 8.0 IO 1.0 –– (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT3906WT1 –– 10.0 Peak Forward Surge Current 8.3 ms single half sine-wave Input Impedance h ie kΩ 30 IFSM superimposed on rated load (JEDEC method) (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 1.0 10 40 2.0 Typical Thermal Resistance RΘJA (V CE= –10(Note Vdc,2)I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 12 –4 120 Typical JunctionVoltage Capacitance (NoteRatio 1) CJ Feedback h re X 10 -55 to +125 -55 to +150 Operating Temperature TJ (V CE=Range 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 0.5 8.0 65 to +175 Storage Temperature Range TSTG (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 0.1 10 Small–Signal Current Gain h fe — FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH (VCHARACTERISTICS MMBT3904WT1 100 400 CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VFkHz) 0.50 0.70 0.85400 (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 MMBT3906WT1 100 0.5 Maximum Average Reverse Current at @T A=25℃ Output Admittance h oe µmhos IR 10 1.0 @T A=125℃ Rated DC Blocking(V Voltage MMBT3904WT1 40 CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) MMBT3906WT1 3.0 60 NOTES: Noise Figure NF dB 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. (V CE= 5.0Vdc, I C = 100µAdc, R S=1.0 kΩ, f =1.0kHz) MMBT3904WT1 –– 5.0 2- Thermal Resistance From Junction to Ambient (V CE= –5.0Vdc, I C = –100 µAdc, R S=1.0 kΩ, f =1.0kHz) MMBT3906WT1 –– 4.0 Vdc, I C Current = 0, f = 1.0 MHz) EB = 0.5 Maximum Average(V Forward Rectified 2012-11 2012-06 Amps Amps ℃/W PF ℃ ℃ UNIT Volts mAmp WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ PNP THRU MMBT3906WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V WILLAS Pb Free Product SOD-123+ PACKAGE Package outline SWITCHING FeaturesCHARACTERISTICS Delay Time (V Vdc, V BEpower = –0.5 Vdc) MMBT3904WT1 process design, excellent dissipation offers • Batch CC = 3.0 td better reverse leakage current thermal resistance. (V CC = –3.0 Vdc, Vand MMBT3906WT1 BE = 0.5 Vdc) profile surface mounted application in order to MMBT3904WT1 • LowRise Time (I C = 10 mAdc, I B1 = 1.0 mAdc) optimize board space. (I C = –10 mAdc, I B1 = –1.0 mAdc) MMBT3906WT1 high efficiency. • Low power loss, Storage Time (V = 3.0 Vdc, I = 10 mAdc) MMBT3904WT1 CC C low forward voltage drop. • High current capability, (V = –3.0 Vdc, I C = –10 mAdc) MMBT3906WT1 CC • High surge capability. Fall Time MMBT3904WT1 B1 = I B2 = 1.0 mAdc) for(I overvoltage protection. • Guardring (I = I = –1.0 mAdc) MMBT3906WT1 switching. • Ultra high-speed B1 B2 • Silicon epitaxial planar chip, metal silicon junction. 2. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. parts meet environmental standards of • Lead-free MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MMBT3904WT1 Mechanical data — tr — — — — — 0.146(3.7) 0.130(3.3) ts t 35 35 ns 35 35 ns 200 0.012(0.3) Typ. 225 ns 50 750.071(1.8) ns — SOD-123H — f 0.056(1.4) +3 V 300 ns rated flame retardant • Epoxy : UL94-V0 +10.9 V 10 < t 1 < 500 µs t1 275 CYCLE = 2% DUTY CYCLE =0.031(0.8) 2% Case : Molded plastic, SOD-123H •DUTY Typ. 10 k , • Terminals :Plated terminals, solderable per MIL-STD-750 – 0.5 V Method 2026 +10.9 V 0.031(0.8) Typ. 275 10 k 0 C S < 4.0 pF* <1 ns band • Polarity : Indicated by cathode • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) +3 V Dimensions in inches and (millimeters)C S < 4.0 pF* 1N916 – 9.1 V <1.0 ns *Total shunt capacitance of test jig and connectors MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1. Delay and Rise Time Ratings at 25℃ ambientFigure temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Equivalent Test Circuit For capacitive load, derate current by 20% RATINGS Figure 2. Storage and Fall Time Equivalent Test Circuit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT TYPICAL TRANSIENT CHARACTERISTICS 12 13 14 15 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 16 60 18 80 10 100 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 10 5000 IO MMBT3904WT1 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Maximum Average Forward Rectified Current 2000 Typical Thermal Resistance (Note 2) C ibo Typical Junction Capacitance (Note 1) TSTG C obo 2.0 CHARACTERISTICS Maximum Reverse Current at @T A=25℃ 0.2 0.3 0.5 0.7 1.0 0.50 70 R 5.0 7.0 I10 50 2.0 3.0 @T A=125℃ REVERSE BIAS VOLTAGE (VOLTS) 3. Capacitance 1- Measured at 1 MHZ and appliedFigure reverse voltage of 4.0 VDC. 200 Volts Amp ℃/W PF -55 to +150 - 65 to +175 ℃ QT ℃ QA VF NOTES: Volts Amp 200 Volts 140 MMBT3904WT1 40 120 300 120 200 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH 100 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 1000 700 500 -55 to +125 TJ Storage Temperature Range 1.0 Average 0.1 CJ 3.0 Operating Temperature Range RΘJA Q, CHARGE (pC) CAPACITANCE (pF) 5.0on rated load (JEDEC method) superimposed 1.0 30 V CC = 40 V I C / I B = 10 3000 7.0 115 150 T J = 25°C 105 T J = 125°C 150 20 30 40 0.70 1.0 2.0 3.0 0.9 0.85 0.5 5.0 7.0 10 10 0.92 Volts 20 30 50 70 100 200 mAmp I C , COLLECTOR CURRENT (mA) Figure 4. Charge Data 2- Thermal Resistance From Junction to Ambient 2012-11 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ PNP THRU FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE MMBT3904WT1G Package outline Features 500 • Batch process design, excellent power dissipation offers 500 TIME (ns) t r , RISE TIME (ns) I C /I B = 10 better 300 reverse leakage current and thermal resistance. • Low200profile surface mounted application in order to optimize board space. • Low100power loss, high efficiency. • High70current capability, low forward voltaget r drop. @V CC=3.0V • High50surge capability. for overvoltage protection. • Guardring 30 40 V • Ultra20high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards of 15 V • Lead-free 10 MMBT3904WT1 MIL-STD-19500 /228 7 2.0 V t d@V"G" =0V OB • RoHS5 product for packing code suffix 1.0free product 2.0 3.0 for 5.0packing 7.0 10 code20suffix 30 "H" 50 70 100 200 Halogen 300 200 SOD-123H 100 0.146(3.7) 0.130(3.3) 50 30 0.071(1.8) 0.056(1.4) 20 10 MMBT3904WT1 7 5 1.0 2.0 3.0 Marking Code I C /I B = 20 20 50 I C /I B = 10 20 10 MMBT3904WT1 7 FM130-MH FM140-MH FM150-MH SYMBOL FM120-MH 1.0 2.0 3.0 FM160-MH 5.0 7.0 10FM180-MH 20 FM1100-MH 30 50 70 FM1150-MH 100 200 FM1200-MH UNIT 50 70 100 200 30 12 20 13 30 14 40 15 I , COLLECTOR 16 18CURRENT 10 (mA) C 50 60 80 100 115 150 120 200 Volts VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts I C , COLLECTOR CURRENT (mA) VRRM Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS Maximum Average Forward Rectified Current IO 1.0 NOISE FIGURE VARIATIONS Peak Forward Surge Current 8.3 ms single half sine-wave(V IFSM CE 12 Typical Thermal Resistance (Note 2) RΘJA superimposed on rated load (JEDEC method) SOURCE RESISTANCE= 200Ω Typical Junction Capacitance (Note 1) I C = 1.0 mA 10 8 6 CJ TJ TSTG SOURCE RESISTANCE= 200 Ω I C = 0.5 mA CHARACTERISTICS @T A=125℃ 2 0 0.1 From 0.2 Junction 0.4 1.0Ambient 2.0 4.0 2- Thermal Resistance to 2012-11 2012-06 12 ℃/W PF -55 to +150 - 65 to +175 I C = 0.5 mA 10 ℃ ℃ I C = 50 µA 8 0.50 6 SOURCE RESISTANCE= 500Ω I C =applied 100 µAreverse voltage of 4.0 VDC.MMBT3904WT1 1- Measured at 1 MHZ and NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SOURCE RESISTANCE Maximum Forward Voltage at 1.0A DC VF =1.0kΩ I C = 50 µA Maximum Average Reverse Current at @T A=25℃ 4 IR Rated DC Blocking Voltage f = 1.0 kHz -55 to +125 Amps 40 120 I C = 1.0 mA 14 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) Storage Temperature Range Amps = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) 30 Operating Temperature Range 70 5 7.0 10 Maximum DC Blocking Voltage V CC=40V I B1 = I B2 I C /Iand = 20 Dimensions in inches (millimeters) B Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 0.024(0.6) 100 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase10 half wave, 60Hz, resistive of inductive load. MMBT3904WT1 For capacitive7load, derate current by 20% RATINGS 2.0 3.0 5.0 200 0.031(0.8) Typ. I C /I B = 10 CHARACTERISTICS 30 MAXIMUM RATINGS AND ELECTRICAL 1.0 50 70 100 300 200 20 5 30 0.031(0.8) Typ. 500 t f , FALL TIME (ns) t ’ s, STORAGE TIME (ns) 30 20 Figure 6. Rise Time IB1 = IB2 • 100 Position : Any • Mounting 70 • Weight 50 : Approximated 0.011 gram 5.0 7.0 10 I C , COLLECTOR CURRENT (mA) 0.040(1.0) C flame retardant Time • Epoxy : UL94-V0 rated Figure 5. Turn–On • Case : Molded plastic, SOD-123H 500 , • Terminals :Plated terminals, solderable per MIL-STD-750 t’s= ts –1/8t f MethodI 2026 /I = 10 C B I C /I B = 20 Polarity : Indicated by cathode band 0.012(0.3) Typ. 70 MechanicalI data , COLLECTOR CURRENT (mA) 300 200 V CC = 40 V I C /I B = 10 10 20 40 0.70 0.85 0.92 mAmps 10 4 Volts 2 MMBT3904WT1 0 100 I C = 100 µA 0.9 0.5 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) R S , SOURCE RESISTANCE (kΩ) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features PARAMETERS offers • Batch process design, excellent power dissipation h better reverse leakage current and thermal (Vresistance. CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) SOD-123H • Low profile surface mounted application in order to optimize board space. • Low 300 power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. MMBT3904WT1 for overvoltage protection. • Guardring 200 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of h oe , OUTPUT ADMITTANCE ( µmhos) h fe, CURRENT GAIN • 0.146(3.7) 0.130(3.3) 100 100 MIL-STD-19500 /228 RoHS product for packing code suffix "G" 70 Halogen free product for packing code suffix "H" 50 Mechanical data • Epoxy : UL94-V0 rated flame retardant 30 : Molded plastic, SOD-123H • Case 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 20 10 5 2 0.040(1.0) 0.024(0.6) 1 0.031(0.8) Typ. 0.1 I C , COLLECTOR CURRENT (mA) Method 2026 Figure 11. Current Gain 0.5 1.0 2.0 3.0 5.0 10 Dimensions in inches and (millimeters) MMBT3904WT1 10 7.0 MMBT3904WT1 5.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 5.0 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 2.0 load, derate current by 20% For capacitive RATINGS 1.0 0.5 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 VDC 20 30 0.2Blocking Voltage Maximum DC 0.1 0.2 0.3 3.0 2.0 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 0.5 1.0 Maximum Average Forward Rectified Current 0.031(0.8) Typ. 0.3 Figure 12. Output Admittance h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) h ie, INPUT IMPEDANCE (k OHMS) 0.2 I C , COLLECTOR CURRENT (mA) • Polarity : Indicated by cathode band • Mounting Position : Any 20 • Weight : Approximated 0.011 gram 10 0.012(0.3) Typ. MMBT3904WT1 50 2.0 3.0 IO 5.0 10 1.014 40 RΘJA CJ Operating Temperature Range TJ Storage Temperature Range 18 80 10 100 115 150 28 35 42 56 70 105 0.540 0.1 50 60 80 100 150 superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) 16 60 0.7 I C , COLLECTOR CURRENT (mA) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Figure 13. Input Impedance Typical Thermal Resistance (Note 2) 15 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 1.0 I C , COLLECTOR CURRENT (mA) 30 Figure 14. Voltage Feedback Ratio 40 120 -55 to +125 10 120 200 Volts 140 Volts 200 Volts Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-11 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE MMBT3904WT1Package outline TYPICAL STATIC dissipation offersCHARACTERISTICS • Batch process design, excellent power Features better reverse leakage current and thermal resistance. SOD-123H h FE , DC CURRENT GAIN (NORMALIZED) • Low profile surface mounted application in order to optimize board space. 20 T J = +125°C • Low power loss, high efficiency. • High current capability, low forward voltage drop. +25°C 10 surge capability. • High • Guardring for overvoltage protection. 0.7 • Ultra high-speed switching. –55°C 0.5 epitaxial planar chip, metal silicon junction. • Silicon • Lead-free parts meet environmental standards of 0.146(3.7) V CE = 1.0 V 0.130(3.3) MMBT3904WT1 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 0.3 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.2 Mechanical data 0.040(1.0) 0.024(0.6) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) : UL94-V0 rated flame retardant • Epoxy 0.1 0.3SOD-123H 0.5 0.7 1.0 2.0 3.0 5.0 7.00.031(0.8) 10 Typ. plastic, • Case0.1: Molded 0.2 , I C , COLLECTOR CURRENT (mA) • Terminals :Plated terminals, solderable per MIL-STD-750 50 70 100 200 0.031(0.8) Typ. Dimensions in inches and (millimeters) T J = 25°C MMBT3904WT1 I C = 1.0 mA 30 mA 10 mA 100 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.6 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 0.4 load, derate current by 20% For capacitive RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.2 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 0 Voltage Maximum RMS VRMS 14 21 28 35 42 56 70 105 140 Volts 200 Volts 0.02 0.03 0.05 0.07 IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) T J = 25°C (Note MMBT3904WT1 Typical Junction Capacitance 1) 1.0 Operating Temperature Range V, VOLTAGE ( VOLTS ) -55 to +125 0.5 VF IR 0.2 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0 2012-11 2012-06 1.0 2.0 60 80 3.0 100 5.0 7.0 150 10 1.0 30 Amps Amps ℃/W PF TO +125°C -55 +25°C to +150 ℃ θ VC- for V CE 65 to +175 0 ℃ –55°C TO +25°C 20 50 – 0.5 0.50 @TVA=125℃ @ I C /I B =10 CE(sat) 2- Thermal Resistance From to Ambient 1.0 2.0 Junction 5.0 10 50 40 MMBT3904WT1 120 1.0 V @ V =1.0 V Maximum Average Reverse Current at @T A=25℃ 0.4 Rated DC Blocking Voltage 0.7 BE CE FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL Maximum Forward Voltage at 1.0A DC NOTES: TSTG CHARACTERISTICS 0.5 IFSM 0.8 0.6 0.3 Figure 16. Collector Saturation Region CJ V BE(sat) @ I C /I B =10 TJ Storage Temperature Range 0.2 20 30 40 I B , BASE CURRENT (mA) RΘJA 1.2 Resistance (Note 2) Typical Thermal 0.1 VDC COEFFICIENT (mV/ °C) 0.01 Maximum DC Blocking Voltage 30 Figure 15. DC Current Gain Method 2026 • Polarity : Indicated by cathode band 1.0 • Mounting Position : Any • Weight : Approximated 0.011 gram 0.8 20 0.70 0.85 0.5 –1.0 10 0.9 –55°C TO +25°C 0.92 Volts mAmp +25°C TO +125°C θ VB for V BE –1.5 –2.0 100 200 0 20 40 60 80 100 120 140 160 180 C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 200 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE MMBT3906WT1 Package Features outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 3V optimize board space. +9.1 V • Low power loss, high efficiency. • High current capability, low forward voltage drop. 275 • High surge capability. < 1 ns 10 k • Guardring for overvoltage protection. 0 • Ultra high-speed switching. C S < 4 pF* epitaxial planar chip, metal silicon junction. • Silicon +10.6 V 300 ns standards of • Lead-free parts meet environmental 10 < t 1 < 500 µs MIL-STD-19500 /228 DUTY CYCLE = 2% 3V 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 275 10 k 0.071(1.8) 0.056(1.4) C S < 4 pF* 1N916 DUTY CYCLE = 2% • RoHS product for packing code suffix "G" < 1 ns 10.9 V t1 Halogen free product for packing codeshunt suffixcapacitance "H" * Total of test jig and connectors Mechanical data Figure 19. Delay and Rise Time 0.040(1.0) Figure 20. Storage and Fall Time • Epoxy : UL94-V0 rated flame retardant Equivalent Test Circuit Equivalent Test Circuit • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 TYPICAL TRANSIENT CHARACTERISTICS Method 2026 • Polarity : Indicated by cathode band Position : Any • Mounting 10.0 • Weight : Approximated 0.011 gram RATINGS Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 14 1.0 300 0.7 1.0 2.0 3.0 202030 40 VDC10 5.0 7.0 13 30 200 40 100 14 15 50 16 60 18 80 10 QA 100 115 150 120 200 Volts 21 70 28 35 42 56 70 105 140 Volts 30 40 1.0 50 50 2.0 200 Volts Maximum Average Forward Rectified Current IO REVERSE BIAS VOLTAGE (VOLTS) superimposed on rated load (JEDEC method) 500 CJ Typical Junction Capacitance (Note 1) 200 Storage Temperature Range I C /I B = 10 -55 to +125 100 CHARACTERISTICS 70 30 IR @T A=125℃ 15 V 40 V 2.0 V 10 1- Measured at 1 7MHZ and applied reverse voltage of 4.0 VDC. 2012-11 2012-06 2.0 3.0 5.0 7.0 10 10050 30 150 70 100 200 Amps Amps ℃/W PF ℃ ℃ 100 20 30 0.70 50 0.9 0.85 0.92 0.5I /I = 10 C B 10 30 20 Volts mAmps 10 7 t d @ V OB = 0 V 5 2- Thermal Resistance From Junction to Ambient 1.0 20 300 200 0.50 80 70 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH t r @ V CC = 3.0 V VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 7.0 10 40 120 MMBT3906WT1 V = 40 V -55 to +150 CC I B1 = I B2 - 65 to +175 I /I = 20 C B 500 TSTG 50 Voltage at 1.0A DC Maximum Forward NOTES: t f , FALL TIME (ns) TIME (ns) TJ MMBT3906WT1 300 Operating Temperature Range RΘJA Typical Thermal Resistance (Note 2) 60 5.0 3.0 1.0 I C , COLLECTOR CURRENT (mA) 22. Charge Data Figure 30 Figure 21. Capacitance Peak Forward Surge Current 8.3 ms single half sine-wave IFSM QT 1000 700 500 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 20 Maximum DC Blocking Voltage 0.1 0.2 0.3 0.5 Q, CHARGE (pC) CAPACITANCE (pF) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistiveCofibo inductive load. 3.0load, derate current by 20% For capacitive Marking Code MMBT3906WT1 V CC = 40 V I C /I B = 10 3000 MAXIMUM RATINGS C obo AND ELECTRICAL CHARACTERISTICS 2.0 T J = 25°C T J = 125°C 5000 MMBT3906WT1 2000 0.031(0.8) Typ. Dimensions in inches and (millimeters) 7.0 5.0 0.024(0.6) 5 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 23. Turn–On Time Figure 24. Fall Time 200 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE MMBT3906WT1 Package outline TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS Features NOISE FIGURE offers VARIATIONS • Batch process design, excellent power dissipation = –5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz) better reverse leakage current and(V thermal resistance. CE SOD-123H • Low profile surface mounted application in order to optimize board space. 5.0 SOURCE RESISTANCE= 200Ω loss, high efficiency. • Low power I C =capability, 1.0 mA low forward voltage drop. • High current 4.0 surge capability. • High SOURCE RESISTANCE= 200 Ω protection. • Guardring for overvoltage I C = 0.5 mA high-speed switching. • Ultra 3.0 SOURCE RESISTANCE =2.0kΩ silicon junction. • Silicon epitaxial planar chip, metal I C = 50 µA standards of • Lead-free parts meet environmental 14 0.146(3.7) NF, NOISE FIGURE (dB) f = 1.0 kHz 0.012(0.3) Typ. NF, NOISE FIGURE (dB) 12 2.0 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" RESISTANCE= 2.0kΩcode suffix "H" HalogenSOURCE free product for packing 1.0 I = 100 µA Mechanical data C MMBT3906WT1 0 : UL94-V0 rated flame retardant • Epoxy I C = 0.5 mA 10 0.071(1.8) 0.056(1.4) 8 6 I C = 50 µA 4 I C = 100 µA 2 0.040(1.0) MMBT3906WT1 0.024(0.6) 0 0.2 0.4 1.0 2.0 4.0 10 20 40 100 plastic, SOD-123H • Case0.1: Molded f, FREQUENCY (kHz) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.2 0.4 1.0 2.0 4.0 10 20 0.031(0.8) Typ. 40 100 0.031(0.8) Typ. R S , SOURCE RESISTANCE (kΩ) Figure 25 Method 2026 I0.130(3.3) = 1.0 mA C Figure 26 h PARAMETERS h fe, CURRENT GAIN MMBT3906WT1 70 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 200 100 RATINGS 50 30 20 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 12 20 VRRM Maximum Recurrent Peak Reverse Voltage 50 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 30 I3.0 O I C , COLLECTOR CURRENT (mA) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Maximum Average Current1.0 0.1Forward 0.2 Rectified 0.3 0.5 2.0 5.0 14 40 10 15 50 35 42 56 70 105 140 60 80 100 150 200 Volts 5.0 0.2 -55 to +125 VF 2.0 Maximum Average Reverse Current at @T A=25℃ NOTES: IR @T A=125℃ 0.5 2- Thermal Resistance From Junction to Ambient 0.2 0.1 2012-11 2012-06 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 Amps 10 Amps 40 120 10 ℃/W PF MMBT3906WT1 -55 to +150 7.0 5.0 - 65 to +175 0.50 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.0 0.5 0.3 ℃ ℃ FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH 3.0 Maximum Forward Voltage at 1.0A DC 5.0 1.0 Rated DC Blocking Voltage Volts Figure 28. Output Admittance TSTG CHARACTERISTICS 120 200 50 0.1 h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) h ie, INPUT IMPEDANCE (kΩ) Storage Temperature Range 115 150 I C , COLLECTOR CURRENT (mA) 30 CJ MMBT3906WT1 TJ Operating Temperature Range 10 10 100 28 10 RΘJA 20 Capacitance (Note 1) Typical Junction 18 80 40 7.0 Figure 27. Current Gain Typical Thermal Resistance (Note 2) 16 60 Volts superimposed on rated load (JEDEC method) MMBT3906WT1 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code 70 h oe , OUTPUT ADMITTANCE ( µmhos) Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) • Mounting Position : Any 100 300 : Approximated 0.011 gram • Weight 1.0 2.0 3.0 5.0 10 0.70 2.0 0.9 0.85 0.92 0.5 Volts mAmp 10 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio 10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ PNP THRU MMBT3906WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V WILLAS Pb Free Product SOD-123+ PACKAGE MMBT3906WT1 STATIC CHARACTERISTICS Package Features outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H h FE , DC CURRENT GAIN (NORMALIZED) • Low20profile surface mounted application in order to T J = +125°C optimize board space. V CE = 1.0 V • Low power loss, high efficiency. 10 +25°C • High current capability, low forward voltage drop. • High0.7surge capability. • Guardring for overvoltage protection. –55°C • Ultra0.5high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 0.3 parts meet environmental standards of • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MMBT3906WT1 MIL-STD-19500 /228 0.2 product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" Mechanical data 0.1 0.040(1.0) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) • Epoxy0.1: UL94-V00.2rated0.3flame retardant 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I C , COLLECTOR CURRENT (mA) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , Figure 31. DC Current Gain • Terminals :Plated terminals, solderable per MIL-STD-750 50 70 0.024(0.6) 100 200 0.031(0.8) Typ. Dimensions in inches and (millimeters) T J = 25°C I C=1.0 mA 30 mA 10 mA 100 mA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.6 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 0.4load, derate current by 20% For capacitive RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 0.2 0.03 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1.2 J V, VOLTAGE ( VOLTS ) Storage Temperature Range 0.8 TSTG CHARACTERISTICS MMBT3906WT1 VF 0.4 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR NOTES: 0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.0 2.0 5.0 10 2- Thermal Resistance From Junction to Ambient 20 50 C , COLLECTOR CURRENT (mA) Figure 33. “ON” Voltages 2012-11 2012-06 0.5 42 56 60 2.0 80 θ VC for V CE(sat) 115 150 70 3.0 100 5.0 120 200 Volts 105 140 Volts 7.0 150 10 200 Volts Amps Amps 40 120 ℃/W PF +25°C TO-55 +125°C to +150 ℃ –55°C TO +25°C - 65 to +175 0 0.50 V CE(sat) @ I C /I B =10 0.2 1.0 10 100 ℃ 0.5 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH –FM140-MH MMBT3906WT1 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 35 18 80 1.0 TVJ @ V =1.0 V -55 to +125 BE CE Operating Temperature Range CJ Typical Junction 1.0Capacitance (Note 1) 28 16 60 IO 1.0 Figure 32. Collector Saturation Region 30 IFSM V BE(sat) R @ΘJA I C /I B =10 Typical Thermal Resistance (Note 2) T = 25°C 0.6 21 15 50 0.7 20 0.2 30 0.3 40 0.5 50 I B , BASE CURRENT (mA) 0.07VDC0.1 0.05 14 40 θ V, TEMPERATURE COEFFICIENT (mV/ °C) 0.01 Voltage 0.02 Maximum DC Blocking 13 30 14 VRMS Maximum RMS 0Voltage 12 20 VRRM Maximum Recurrent Peak Reverse Voltage 30 Method 2026 • Polarity : Indicated by cathode band 1.0 • Mounting Position : Any MMBT3906WT1 • Weight 0.8 : Approximated 0.011 gram 20 100 200 0.9 0.85+25°C TO +125°C 0.70 –1.0 θ VB for V BE(sat) –1.5 0.92 0.5 Volts 10 –55°C TO +25°C mAmps –2.0 0 20 40 60 80 100 120 140 160 180 200 I C , COLLECTOR CURRENT (mA) Figure 34. Temperature Coefficients WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. NPN MMBT3904WT1 FM120-M+ PNP THRU MMBT3906WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H SOT-323 optimize board space. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) .004(0.10)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .087(2.20) • Guardring for overvoltage protection. .070(1.80) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .096(2.45) .078(2.00) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .010(0.25) .003(0.08) Dimensions in inches and (millimeters) Method 2026 .056(1.40) • Polarity : Indicated by cathode band .047(1.20) • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 13 30 14 VRMS .016(0.40) 21 VDC .008(0.20) superimposed on rated load (JEDEC method) 12 20 VRRM Maximum Recurrent Peak Reverse Voltage 30 IO IFSM TJ 0.025 TSTG 0.65 Storage Temperature Range CHARACTERISTICS 16 60 18 80 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 1.0 30 -55 to +125 40 120 Amps ℃/W PF -55 to +150 0.025 0.65 Amps ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ 0.50 0.70 0.85 0.5 IR @T A=125℃ 0.9 0.92 Volts 10 0.075 1.9 NOTES: 15 50 Dimensions in inches and (millimeters) RΘJA CJ Operating Temperature Range Rated DC Blocking Voltage 20 14 40 .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate.004(0.10)MAX. current by 20% mAmps 0.035 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.9 0.028 0.7 inches mm 2012-11 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.