VBT4045C-E3 Datasheet

VBT4045C-E3
www.vishay.com
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.28 V at IF = 5.0 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
1
VBT4045C
PIN 1
PIN 2
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
45 V
IFSM
240 A
VF at IF = 20 A
0.41 V
TJ max.
150 °C
Package
TO-263AB
Diode variations
Common cathode
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
VBT4045C
UNIT
VRRM
45
V
40
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Revision: 09-Sep-13
SYMBOL
IF(AV)
A
20
IFSM
240
A
TJ, TSTG
-40 to +150
°C
Document Number: 89361
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT4045C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
TA = 25 °C
IF = 20 A
Instantaneous forward voltage per diode
VF (1)
IF = 5 A
IF = 10 A
TA = 125 °C
IF = 20 A
VR = 45 V
Reverse current per diode
TA = 25 °C
TYP.
MAX.
0.41
-
0.44
-
0.50
0.58
0.28
-
V
0.33
-
0.41
0.50
-
3000
μA
18
50
mA
IR (2)
TA = 125 °C
UNIT
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT4045C
1.5
per diode
Typical thermal resistance
per device
UNIT
°C/W
RJC
0.8
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VBT4045C-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VBT4045C-E3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
40
D = 0.5
10
Average Power Loss (W)
Average Forward Rectified Current (A)
45
35
30
25
20
15
10
D = 0.3
8
D = 0.2
D = 1.0
6
D = 0.1
T
4
2
5
0
100
D = 0.8
D = tp/T
tp
16
20
0
110
120
130
140
150
0
4
8
12
24
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 09-Sep-13
Document Number: 89361
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT4045C-E3
www.vishay.com
Vishay General Semiconductor
100 000
TA = 150 °C
10
TA = 100 °C
TA = 125 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
1
TA = 25 °C
10 000
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.7
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
TA = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
40
60
80
1
0.1
0.01
0.001
20
Junction to Case
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
Revision: 09-Sep-13
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 89361
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000