VBT2045BP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5 A FEATURES TMBS® • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 PIN 1 PIN 2 K TYPICAL APPLICATIONS HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(DC) 20 A VRRM 45 V IFSM 160 A VF at IF = 20 A 0.51 V TOP max. (AC mode) 150 °C Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test TJ max. (DC forward current) 200 °C Package TO-263AB Polarity: As marked Diode variation Single die Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage SYMBOL VBT2045BP UNIT VRRM 45 V IF(DC) (1) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 160 A Operating junction temperature range (AC mode) TOP -40 to +150 °C Junction temperature in DC forward current without reverse bias, t 1 h TJ (2) 200 °C Maximum DC forward bypassing current (fig. 1) Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test Revision: 09-Sep-13 Document Number: 89450 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT2045BP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A TA = 25 °C IF = 20 A Instantaneous forward voltage VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 20 A VR = 45 V Reverse current TA = 25 °C TYP. MAX. 0.44 - 0.49 - 0.57 0.66 0.33 - V 0.41 - 0.51 0.63 - 2000 μA 10 30 mA IR (2) TA = 125 °C UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VBT2045BP UNIT RJC 1.5 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT2045BP-E3/4W PREFERRED P/N 1.37 4W 50/tube Tube TO-263AB VBT2045BP-E3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 Instantaneous Forward Current (A) 100 DC Forward Current (A) 20 16 12 8 DC Forward Current at Thermal Equilibrium 4 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0 25 50 75 100 125 150 175 200 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Revision: 09-Sep-13 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Document Number: 89450 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT2045BP-E3 Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) www.vishay.com 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 40 60 80 10 1 0.1 100 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Reverse Characteristics Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) Revision: 09-Sep-13 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 89450 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000