VBT3045CBP-E3 Datasheet

VBT3045CBP-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.30 V at IF = 5.0 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per
LF maximum peak of 245 °C
J-STD-020,
• TJ 200 °C max. in solar bypass mode application
2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
1
VBT3045CBP
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV)
2 x 15 A
VRRM
45 V
IFSM
200 A
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 15 A
0.39 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current)
200 °C
Package
TO-263AB
Diode variation
Common cathode
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current
without reverse bias, t  1 h
SYMBOL
VBT3045CBP
UNIT
VRRM
45
V
IF(AV) (1)
30
A
15
IFSM
200
A
TOP, TSTG
-40 to +150
°C
TJ (2)
 200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 09-Sep-13
Document Number: 89373
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT3045CBP-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 7.5 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 15 A
VF (1)
IF = 5 A
TA = 125 °C
IF = 7.5 A
IF = 15 A
TA = 25 °C
VR = 45 V
Reverse current per diode
TYP.
MAX.
0.42
-
0.44
-
0.49
0.57
0.30
-
V
0.33
-
0.39
0.48
-
2000
μA
17
50
mA
IR (2)
TA = 125 °C
UNIT
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT3045CBP
UNIT
1.6
per diode
Typical thermal resistance
°C/W
RJC
per device
0.85
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VBT3045CBP-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VBT3045CBP-E3/8W
1.38
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
9
D = 0.5
8
30
Average Power Loss (W)
DC Forward Rectified Current (A)
35
25
20
15
10
5
DC Forward Current at
Thermal Equilibrium
D = 0.8
D = 0.3
7
D = 0.2
6
5
D = 1.0
D = 0.1
4
T
3
2
1
D = tp/T
tp
0
0
100
120
140
160
180
200
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 09-Sep-13
0
2
4
6
8
10
12
14
16
18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Document Number: 89373
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT3045CBP-E3
www.vishay.com
Vishay General Semiconductor
100 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 100 °C
TA = 125 °C
1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 000
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.7
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
TA = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
40
60
80
Junction to Case
1
0.1
0.01
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
Revision: 09-Sep-13
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 89373
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000