MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 65 65 3.5 21.6 875 +200 -65 to +150 Unit V V V A W °C °C APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 350 Watts @ 10µSec Pulse Width, 10% Duty Cycle 300 Watts @ 250µSec Pulse Width 10% Duty Cycle 9.5 dB Min. Gain Refractory Gold Metallization Emitter Ballasting And Low Thermal Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions W W W . Microsemi .COM The MS2176 is a gold metallized silicon NPN pulse power transistor. The MS2176 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. UHF Pulsed Applications °C/W 0.2 PIN CONNECTION 1 4 3 1. Collector 2. Base Copyright 2000 MSC1651.PDF 2001-01-04 3. Emitter 4. Base .400 X .400 2LFL (M106) hermetically sealed Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 MS2176 2 MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW Symbol BVCBO BVCES BVCEO BVEBO ICES hFE Test Conditions IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCB =30 V VCE = 5 V Min. 65 65 28 3.5 IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A MS2176 Typ. Max. 7.5 100 10 Units V V V V mA W W W . Microsemi .COM STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) Symbol POUT GP ηC Test Conditions f = 425 MHz f = 425 MHz f = 425 MHz PIN = 33.5 W PIN = 300 W PIN = 25 W VCE = 40 V VCE = 40 V VCE = 40 V Min. 300 9.5 55 MS2176 Typ. Max. Units W dB % Note: Pulse Width = 250µSec, Duty Cycle = 10% ELECTRICALS Copyright 2000 MSC1651.PDF 2001-01-04 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 2 MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW W W W . Microsemi .COM PACKAGE DATTA Copyright 2000 MSC1651.PDF 2001-01-04 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 3 MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW W W W . Microsemi .COM NOTES Copyright 2000 MSC1651.PDF 2001-01-04 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 4