BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 20 15 2.0 25 273 150 -55 to +150 APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Unit V V V mA mW C C IM Symbol VCBO VCEO VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) ! LNA, Oscillator, Pre-Driver SOT-23 BFR92ALT1 THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 275 W W W . Microsemi .COM ! High FTau-4.5GHz C/W Symbol BVCBO BVCEO I CBO hFE Test Conditions IC = .1mA IC =10mA VCB = 10V VCB =10V Y AR IN STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) Min. 20 15 IE = 0 IB = 0 IE = 0 IC = 14mA Typ. Max. 50 40 Units V V nA DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C) CCB FTau NF Copyright 2000 Test Conditions VCB = 10 V f = 1.0 MHz VCE = 10 V IC= 14 mA f = 500MHz VCE = 1.5 VIC= 3.0 mA f = 500MHz Microsemi Min. Typ. 0.7 4.5 3.0 Max. RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Units PF GHz dB Page 1 of 1 BFR92ALT1 Symbol