140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2213 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS Features • • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB Gain DESCRIPTION: The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol PDISS IC VCC TJ TSTG Parameter Power Dissipation * (TC ≤ 85°°C) Device Current * Collector - Supply Voltage * Junction Temperature (Pulsed RF Operation) Storage Temperature Value Unit 75 3.5 40 250 - 65 to + 200 W A V °C °C 2.2 ° C/W Thermal Data RTH(j-c) Junction-Case Thermal Resistance * Applies only to rated RF amplifier operation MSC0920.PDF 9-23-98 MS2213 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° 25° C) STATIC Symbol BVCBO BVEBO BVCER ICES hFE Test Conditions IC = 10 mA IE = 1 mA IC = 20 mA VCE = 35 V VCE = 5V RBE =10Ω IC = 1.0 A Min. Value Typ. Max. Unit 55 3.5 55 ---15 ---------------- ---------5.0 150 V V V mA ---- Min. Value Typ. Max. Unit 30 40 7.8 36 45 8.6 ---------- W % dB DYNAMIC Symbol POUT VC GP Note: Test Conditions f = 960 - 1215 MHz f = 960 - 1215 MHz f = 960 - 1215 MHz PIN = 5.0 W PIN = 5.0 W PIN = 5.0 W VCC = +35 V VCC = +35 V VCC = +35 V Pulse format: 6.4 µ s on 6.6 µ s off, repeat for 3.3 ms, then off for 4.5125 ms. Duty Cycle: Burst 49.2%, Overall 20.8% MSC0920.PDF 9-23-98 MS2213 PACKAGE MECHANICAL DATA MSC0920.PDF 9-23-98